Abstract:
An apparatus comprising a memory and a controller. The memory may be configured to process a plurality of read/program operations. The memory may comprise a plurality of memory units. The memory units may each have a size less than a total size of the memory. The memory units may include a plurality of cells. The controller may be configured to issue a plurality of program operations to write to one or more of the cells. The controller may be configured to implement a polling status command after each of the program operations to verify programming of each of the cells. A response to each of the polling status commands may be used to report a number of the cells that failed to be programmed.
Abstract:
Systems and method relating generally to solid state memory, and more particularly to systems and methods for recycling data in a solid state memory. The systems and methods include receiving a data set maintained in a memory device, applying at least one iteration of a data decoding algorithm to the data set by a data decoder circuit to yield a decoded output, counting the number of iterations of the data decoding algorithm applied to the data set to yield an iteration count, and recycling the data set to the memory device. The recycling is triggered based at least in part on the iteration count.
Abstract:
Systems and methods relating generally to data processing, and more particularly to systems and methods for characterizing a solid state memory. In one embodiment, the systems and methods may include programming a first cell of a solid state memory device to a negative voltage, programming a second cell of the solid state memory device to a positive voltage, wherein the second cell is adjacent to the first cell, calculating a voltage shift on the negative voltage programmed to the first cell, characterizing a shifted voltage level on the first cell as an interim voltage, and subtracting the voltage shift from the interim voltage to yield an actual voltage on the first cell.
Abstract:
Systems and methods relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. An example data processing system includes a first circuit operable to yield a modified soft data set from a data set accessed from a solid state memory device, and a second circuit operable to apply a data decoding algorithm to the modified soft data to yield a decoded output.
Abstract:
Systems and method relating generally to solid state memory, and more particularly to systems and methods for reducing errors in a solid state memory.
Abstract:
Systems and methods relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. An example data processing system includes a first circuit operable to yield a modified soft data set from a data set accessed from a solid state memory device, and a second circuit operable to apply a data decoding algorithm to the modified soft data to yield a decoded output.
Abstract:
Systems and method relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. In one embodiment, the systems and methods include providing a flash memory circuit including a superset of memory cells, accessing a data set from a group of memory cells using a standard reference value to distinguish bit values in the group of memory cells, and based at least in part on determining that the group of memory cells was a last written group of memory cells, re-accessing a data set from the group of memory cells using a last written reference value to distinguish bit values in the group of memory cells.
Abstract:
A method of characterizing a distribution of a maximum number of errors that first cause uncorrectable error correction code failure for hard low density parity check codes includes selecting a low density parity check code, generating encoded data with the low density parity check code and writing the encoded data to a number of memory blocks, reading the encoded data from the number of memory blocks and determining any pages having a first uncorrectable error correction code failure, determining a number of raw bit errors for each page having a first uncorrectable error correction code failure, incrementing an error count value corresponding to each of the numbers of raw bit errors determined, and repeating the generating, reading, determining, and incrementing steps for a predetermined range of values of a predetermined reliability statistic of the memory blocks.
Abstract:
An apparatus having an interface to a plurality of memories and a circuit is disclosed. Each memory generally has a plurality of planes and is nonvolatile. The circuit is configured to (i) generate a plurality of codewords by encoding a plurality of data units, (ii) generate a plurality of slices by parsing the codewords, (iii) generate a plurality of pages by interleaving the slices and (iv) write the pages in parallel into respective ones of the planes.
Abstract:
Systems and methods relating generally to solid state memory, and more particularly to systems and methods for recovering data from a solid state memory. An example data processing system includes a first circuit operable to yield a modified soft data set from a data set accessed from a solid state memory device, and a second circuit operable to apply a data decoding algorithm to the modified soft data to yield a decoded output.