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    DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE
    21.
    发明公开
    DISPLAY DEVICE, DISPLAY MODULE, AND ELECTRONIC DEVICE 审中-公开

    公开(公告)号：US20240315108A1

    公开(公告)日：2024-09-19

    申请号：US18672210

    申请日：2024-05-23

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Ryo HATSUMI ,  Taisuke KAMADA ,  Daisuke KUBOTA ,  Rai SATO ,  Hiroki ADACHI ,  Ryo YAMAUCHI ,  Kazunori WATANABE

    IPC: H10K59/60 ,  G09G3/30 ,  G09G3/3208 ,  H10K50/86 ,  H10K59/30

    CPC classification number: H10K59/60 ,  G09G3/30 ,  G09G3/3208 ,  H10K50/865 ,  H10K59/30 ,  G09G2360/142

    Abstract: A display device having a function of sensing light is provided. The display device includes a first substrate, a second substrate, a light-receiving element, a light-emitting element, a resin layer, and a light shielding layer. The light-receiving element, the light-emitting element, the resin layer, and the light shielding layer are each positioned between the first substrate and the second substrate. The light-receiving element includes a first pixel electrode over the first substrate, an active layer over the first pixel electrode, and a common electrode over the active layer. The light-emitting element includes a second pixel electrode over the first substrate, a first light-emitting layer over the second pixel electrode, and the common electrode over the first light-emitting layer. The resin layer and the light shielding layer are each positioned between the common electrode and the second substrate. The resin layer includes a portion overlapping with the light-emitting element. The light shielding layer includes a portion positioned between the common electrode and the resin layer. The resin layer includes a portion overlapping with the light-receiving element or is provided in an island shape. At least part of light passing through the second substrate enters the light-receiving element without through the resin layer.

    Fabrication Method of Semiconductor Device and Semiconductor Device
    25.
    发明申请
    Fabrication Method of Semiconductor Device and Semiconductor Device 有权

    公开(公告)号：US20220013754A1

    公开(公告)日：2022-01-13

    申请号：US17479329

    申请日：2021-09-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Seiji Yasumoto ,  Kayo KUMAKURA ,  Yuka SATO ,  Satoru IDOJIRI ,  Hiroki ADACHI ,  Kenichi OKAZAKI

    IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52

    Abstract: A high-yield fabricating method of a semiconductor device including a peeling step is provided.
    A peeling method includes a step of stacking and forming a first material layer and a second material layer over a substrate and a step of separating the first material layer and the second material layer from each other. The second material layer is formed over the substrate with the first material layer therebetween. The first material layer includes a first compound layer in contact with the second material layer and a second compound layer positioned closer to the substrate side than the first compound layer is. The first compound layer has the highest oxygen content among the layers included in the first material layer. The second compound layer has the highest nitrogen content among the layers included in the first material layer. The second material layer includes a resin. In the step of separating, the first material layer and the second material layer are separated from each other by irradiation of an interface between the first material layer and the second material layer or the vicinity of the interface with light.

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