公开(公告)号：US11177176B2

公开(公告)日：2021-11-16

申请号：US16649890

申请日：2018-10-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Hiromi Sawai ,  Ryota Hodo ,  Katsuaki Tochibayashi

IPC分类号： H01L21/8234 ,  H01L29/786

摘要： A semiconductor device that can have favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; a second insulator over the first insulator; an oxide over the second insulator; a first conductor and a second conductor over the oxide; a third insulator over the oxide; a third conductor positioned over the third insulator and overlapping with the oxide; a fourth insulator in contact with the second insulator, a side surface of the oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, a top surface of the second conductor, and a side surface of the third insulator; and a fifth insulator in contact with a top surface of the third insulator and a top surface of the third conductor, and a top surface of the fourth insulator is in contact with the fifth insulator.

公开(公告)号：US10693010B2

公开(公告)日：2020-06-23

申请号：US16413860

申请日：2019-05-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L27/146 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/15

摘要： A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US10658389B2

公开(公告)日：2020-05-19

申请号：US15386017

申请日：2016-12-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L23/522 ,  H01L27/13 ,  H01L21/84 ,  H01L21/822

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

公开(公告)号：US10347768B2

公开(公告)日：2019-07-09

申请号：US15872154

申请日：2018-01-16

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Junichi Koezuka ,  Toshinari Sasaki ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC分类号： H01L29/02 ,  H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L27/146 ,  G02F1/133 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1368 ,  G06F3/041 ,  H01L27/32 ,  G02F1/1362 ,  H01L27/15

摘要： A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US10199508B2

公开(公告)日：2019-02-05

申请号：US15704093

申请日：2017-09-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Yoshinobu Asami ,  Yutaka Okazaki ,  Motomu Kurata ,  Katsuaki Tochibayashi ,  Shinya Sasagawa ,  Kensuke Yoshizumi ,  Hideomi Suzawa

IPC分类号： H01L29/49 ,  H01L29/786 ,  H01L29/66 ,  H01L21/4757 ,  H01L21/47 ,  H01L21/477 ,  H01L33/00 ,  H01L27/12

摘要： A miniaturized transistor, a transistor with low parasitic capacitance, a transistor with high frequency characteristics, or a semiconductor device including the transistor is provided. The semiconductor device includes a first insulator, an oxide semiconductor over the first insulator, a first conductor and a second conductor that are in contact with the oxide semiconductor, a second insulator that is over the first and second conductors and has an opening reaching the oxide semiconductor, a third insulator over the oxide semiconductor and the second insulator, and a fourth conductor over the third insulator. The first conductor includes a first region and a second region. The second conductor includes a third region and a fourth region. The second region faces the third region with the first conductor and the first insulator interposed therebetween. The second region is thinner than the first region. The third region is thinner than the fourth region.

公开(公告)号：US09853165B2

公开(公告)日：2017-12-26

申请号：US14853542

申请日：2015-09-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shinya Sasagawa ,  Akihisa Shimomura ,  Katsuaki Tochibayashi ,  Yuta Endo ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L21/311 ,  H01L21/3213 ,  H01L27/12

CPC分类号： H01L29/7869 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1225 ,  H01L29/78648

摘要： A method for manufacturing a semiconductor device, including the steps of forming a semiconductor over a substrate; forming a first conductor over the semiconductor; forming a first insulator over the first conductor; forming a resist over the first insulator; performing light exposure and development on the resist to make a second region and a third region remain and expose part of the first insulator; applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen; and depositing and etching an organic substance with the plasma. The etching rate of the organic substance is higher than the deposition rate of the organic substance in an exposed part of the first insulator, and the deposition rate of the organic substance is higher than the etching rate of the organic substance in a side surface of the second region.

公开(公告)号：US09252248B2

公开(公告)日：2016-02-02

申请号：US14682376

申请日：2015-04-09

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Masami Jintyou ,  Yamato Aihara ,  Katsuaki Tochibayashi ,  Toru Arakawa

IPC分类号： H01L29/66 ,  H01L21/02 ,  H01L29/45 ,  H01L29/786 ,  H01L21/441 ,  H01L21/4757 ,  H01L29/04 ,  H01L29/24

CPC分类号： H01L29/66969 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/441 ,  H01L21/47573 ,  H01L29/045 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

摘要： An object is to provide a technique by which a semiconductor device including a high-performance and high-reliable transistor is manufactured. A protective conductive film which protects an oxide semiconductor layer when a wiring layer is formed from a conductive layer is formed between the oxide semiconductor layer and the conductive layer, and an etching process having two steps is performed. In a first etching step, an etching is performed under conditions that the protective conductive film is less etched than the conductive layer and the etching selectivity of the conductive layer to the protective conductive film is high. In a second etching step, etching is performed under conditions that the protective conductive film is more easily etched than the oxide semiconductor layer and the etching selectivity of the protective conductive film to the oxide semiconductor layer is high.

摘要翻译： 本发明的目的是提供一种制造包括高性能和高可靠性晶体管的半导体器件的技术。 在氧化物半导体层和导电层之间形成由导电层形成布线层时保护氧化物半导体层的保护导电膜，并且进行具有两个步骤的蚀刻工艺。 在第一蚀刻步骤中，在保护导电膜比导电层蚀刻少的条件下进行蚀刻，并且导电层对保护导电膜的蚀刻选择性高。 在第二蚀刻步骤中，在保护导电膜比氧化物半导体层更容易蚀刻的条件下进行蚀刻，并且保护性导电膜对氧化物半导体层的蚀刻选择性高。

公开(公告)号：US20150349127A1

公开(公告)日：2015-12-03

申请号：US14489074

申请日：2014-09-17

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Motomu Kurata ,  Shinya Sasagawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Tomoaki Moriwaka ,  Jiro Nishida ,  Hidekazu Miyairi ,  Shunpei Yamazaki

IPC分类号： H01L29/786 ,  H01L27/12 ,  H01L29/66

CPC分类号： H01L27/1207 ,  H01L21/8221 ,  H01L21/84 ,  H01L23/5226 ,  H01L27/1225 ,  H01L27/1259 ,  H01L27/13 ,  H01L29/66969 ,  H01L29/7869

摘要： The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third layer including a second insulating film over the second layer, and a fourth layer including a second transistor over the third layer. A first conductive film electrically connects the first transistor and the second transistor to each other through an opening provided in the first insulating film. A second conductive film electrically connects the first transistor, the second transistor, and the first conductive film to one another through an opening provided in the second insulating film. A channel formation region of the first transistor includes a single crystal semiconductor. A channel formation region of the second transistor includes an oxide semiconductor. The width of a bottom surface of the second conductive film is 5 nm or less.

摘要翻译： 半导体器件包括第一层，第一层包括第一晶体管，第二层，包括第一层上的第一绝缘膜，第三层，包括第二层上的第二绝缘膜;以及第四层，包括第三层上的第二晶体管 。 第一导电膜通过设置在第一绝缘膜中的开口将第一晶体管和第二晶体管彼此电连接。 第二导电膜通过设置在第二绝缘膜中的开口将第一晶体管，第二晶体管和第一导电膜彼此电连接。 第一晶体管的沟道形成区域包括单晶半导体。 第二晶体管的沟道形成区包括氧化物半导体。 第二导电膜的底面的宽度为5nm以下。

公开(公告)号：US11908949B2

公开(公告)日：2024-02-20

申请号：US18077452

申请日：2022-12-08

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Yuki Hata ,  Katsuaki Tochibayashi ,  Junpei Sugao ,  Shunpei Yamazaki

IPC分类号： H01L29/66 ,  H01L29/786 ,  H01L21/3115 ,  H10B12/00

CPC分类号： H01L29/7869 ,  H01L21/31155 ,  H10B12/36

摘要： A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

公开(公告)号：US11495690B2

公开(公告)日：2022-11-08

申请号：US16969259

申请日：2019-02-14

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei Yamazaki ,  Katsuaki Tochibayashi ,  Ryota Hodo

IPC分类号： H01L29/786

摘要： A semiconductor device having high on-state current and high reliability is provided. The semiconductor device includes, a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a first conductor and a second conductor over the second oxide; a third oxide over the second oxide; a second insulator over the third oxide; a third conductor located over the second insulator and overlapping with the third oxide; a third insulator in contact with a top surface of the first insulator, a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor; a fourth insulator over the third insulator; a fifth insulator over the fourth insulator; and a sixth insulator over the third conductor, the second insulator, the third oxide and the fifth insulator. The sixth insulator is in contact with a top surface of each of the third conductor, the second insulator, the third oxide, and the fifth insulator.