公开(公告)号：US20160079438A1

公开(公告)日：2016-03-17

申请号：US14945937

申请日：2015-11-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Kengo AKIMOTO ,  Yasuo NAKAMURA

IPC: H01L29/786 ,  H01L29/51 ,  H01L27/12 ,  H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/78696 ,  H01L21/02323 ,  H01L21/02565 ,  H01L21/32139 ,  H01L21/465 ,  H01L21/467 ,  H01L21/4763 ,  H01L21/47635 ,  H01L27/1225 ,  H01L29/0692 ,  H01L29/1033 ,  H01L29/24 ,  H01L29/263 ,  H01L29/42364 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/78633 ,  H01L29/7869 ,  H01L29/78693

Abstract: To provide a method by which a semiconductor device including a thin film transistor with excellent electric characteristics and high reliability is manufactured with a small number of steps. After a channel protective layer is formed over an oxide semiconductor film containing In, Ga, and Zn, a film having n-type conductivity and a conductive film are formed, and a resist mask is formed over the conductive film. The conductive film, the film having n-type conductivity, and the oxide semiconductor film containing In, Ga, and Zn are etched using the channel protective layer and gate insulating films as etching stoppers with the resist mask, so that source and drain electrode layers, a buffer layer, and a semiconductor layer are formed.

公开(公告)号：US20150362806A1

公开(公告)日：2015-12-17

申请号：US14837599

申请日：2015-08-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Shigeki KOMORI ,  Hideki UOCHI ,  Tomoya FUTAMURA ,  Takahiro KASAHARA

IPC: G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/136204 ,  H01L27/0248 ,  H01L27/1225 ,  H01L27/124 ,  H01L33/0041 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In order to take advantage of the properties of a display device including an oxide semiconductor, a protective circuit and the like having appropriate structures and a small occupied area are necessary. The protective circuit is formed using a non-linear element which includes a gate insulating film covering a gate electrode; a first oxide semiconductor layer over the gate insulating film; a channel protective layer covering a region which overlaps with a channel formation region of the first oxide semiconductor layer; and a first wiring layer and a second wiring layer each of which is formed by stacking a conductive layer and a second oxide semiconductor layer and over the first oxide semiconductor layer. The gate electrode is connected to a scan line or a signal line, the first wiring layer or the second wiring layer is directly connected to the gate electrode.

Abstract translation: 为了利用包括氧化物半导体的显示装置的特性，需要具有适当结构和占用面积小的保护电路等。 保护电路使用非线性元件形成，该非线性元件包括覆盖栅电极的栅极绝缘膜; 栅绝缘膜上的第一氧化物半导体层; 覆盖与第一氧化物半导体层的沟道形成区重叠的区域的沟道保护层; 以及通过层叠导电层和第二氧化物半导体层并在第一氧化物半导体层上形成的第一布线层和第二布线层。 栅电极连接到扫描线或信号线，第一布线层或第二布线层直接连接到栅电极。

公开(公告)号：US20150303072A1

公开(公告)日：2015-10-22

申请号：US14790668

申请日：2015-07-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichiro SAKATA ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Miyuki HOSOBA ,  Masayuki SAKAKURA ,  Yoshiaki OIKAWA

IPC: H01L21/477 ,  H01L29/786 ,  H01L29/66

CPC classification number: H01L21/477 ,  G02F1/133345 ,  G02F1/1368 ,  H01L21/02565 ,  H01L21/02664 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1251 ,  H01L27/1259 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Abstract translation: 本发明的目的是提供具有优异显示特性的显示装置，其中使用具有对应于各个电路的特性的不同结构的晶体管形成设置在一个基板上的像素电路和驱动电路。 驱动器电路部分包括驱动电路晶体管，其中使用金属膜形成栅电极层，源电极层和漏电极层，并且使用氧化物半导体形成沟道层。 像素部分包括其中使用氧化物导体形成栅电极层，源电极层和漏电极层的像素晶体管，并且使用氧化物半导体形成半导体层。 像素晶体管使用透光材料形成，因此可以制造具有较高开口率的显示装置。

公开(公告)号：US20150214383A1

公开(公告)日：2015-07-30

申请号：US14679144

申请日：2015-04-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiromichi GODO ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/24

CPC classification number: H01L29/78693 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02631 ,  H01L29/24 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869 ,  H01L29/78696

Abstract: An object is to reduce to reduce variation in threshold voltage to stabilize electric characteristics of thin film transistors each using an oxide semiconductor layer. An object is to reduce an off current. The thin film transistor using an oxide semiconductor layer is formed by stacking an oxide semiconductor layer containing insulating oxide over the oxide semiconductor layer so that the oxide semiconductor layer and source and drain electrode layers are in contact with each other with the oxide semiconductor layer containing insulating oxide interposed therebetween; whereby, variation in threshold voltage of the thin film transistors can be reduced and thus the electric characteristics can be stabilized. Further, an off current can be reduced.

Abstract translation: 目的是为了减小阈值电压的变化，以稳定每个使用氧化物半导体层的薄膜晶体管的电特性。 目的是减少关断电流。 使用氧化物半导体层的薄膜晶体管通过在氧化物半导体层上层叠含有绝缘氧化物的氧化物半导体层而形成，使得氧化物半导体层和源极和漏极电极层彼此接触，氧化物半导体层包含绝缘体 介于其间的氧化物; 从而可以减小薄膜晶体管的阈值电压的变化，从而能够稳定电特性。 此外，可以减少截止电流。

公开(公告)号：US20150179805A1

公开(公告)日：2015-06-25

申请号：US14635199

申请日：2015-03-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Hiroki OHARA ,  Tatsuya HONDA ,  Takatsugu OMATA ,  Yusuke NONAKA ,  Masahiro TAKAHASHI ,  Akiharu MIYANAGA

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/04

CPC classification number: H01L29/78696 ,  H01L29/045 ,  H01L29/1033 ,  H01L29/247 ,  H01L29/7869 ,  H01L29/78693

Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm−1 and less than or equal to 0.7 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm−1 and less than or equal to 4.1 nm−1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm−1 and less than or equal to 1.4 nm−1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm−1 and less than or equal to 7.1 nm−1.

Abstract translation: 提供了具有更稳定的导电性的氧化物半导体膜。 氧化物半导体膜包含结晶区域。 氧化物半导体膜具有在散射矢量的大小为散射矢量的大小的区域中具有大于或等于0.4nm -1且小于或等于0.7nm -1的半高全宽的电子衍射强度的第一峰值 大于或等于3.3nm -1且小于或等于4.1nm -1。 氧化物半导体膜具有第二峰电子衍射强度，半导体全宽度大于或等于0.45nm-1且小于或等于1.4nm-1，其中散射矢量的大小为 大于或等于5.5nm -1且小于或等于7.1nm -1。

公开(公告)号：US20150060675A1

公开(公告)日：2015-03-05

申请号：US14467161

申请日：2014-08-25

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Kengo AKIMOTO ,  Junichi KOEZUKA ,  Hironobu TAKAHASHI

IPC: G01T1/20 ,  H01L27/146

CPC classification number: G01T1/2018 ,  A61B6/4208 ,  H01L27/14663

Abstract: To provide an imaging device that is highly stable when exposed to radiation such as X-rays. The imaging device includes a substrate, a pixel circuit, and a scintillator which are stacked in order. The pixel circuit includes a light-receiving element and a circuit portion electrically connected to the light-receiving element. The substrate is provided with a heater. A transistor in the pixel circuit is heated by the passage of a current through the heater at times other than imaging, thus, degradation of the electrical characteristics of the transistor due to X-ray irradiation can be recovered.

Abstract translation: 提供当暴露于诸如X射线的辐射时高度稳定的成像装置。 成像装置包括依次层叠的基板，像素电路和闪烁体。 像素电路包括光接收元件和电连接到光接收元件的电路部分。 基板设有加热器。 像素电路中的晶体管通过在成像之外的时间通过加热器的电流而被加热，因此可以恢复由于X射线照射引起的晶体管的电特性的劣化。

公开(公告)号：US20150050774A1

公开(公告)日：2015-02-19

申请号：US14471632

申请日：2014-08-28

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Kengo AKIMOTO

IPC: H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/0234 ,  H01L21/02565 ,  H01L29/247 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693

Abstract: An object is to provide favorable interface characteristics of a thin film transistor including an oxide semiconductor layer without mixing of an impurity such as moisture. Another object is to provide a semiconductor device including a thin film transistor having excellent electric characteristics and high reliability, and a method by which a semiconductor device can be manufactured with high productivity. A main point is to perform oxygen radical treatment on a surface of a gate insulating layer. Accordingly, there is a peak of the oxygen concentration at an interface between the gate insulating layer and a semiconductor layer, and the oxygen concentration of the gate insulating layer has a concentration gradient. The oxygen concentration is increased toward the interface between the gate insulating layer and the semiconductor layer.

Abstract translation: 本发明的目的是提供一种薄膜晶体管的有利的界面特性，该薄膜晶体管包括氧化物半导体层，而不混入杂质如水分。 另一个目的是提供一种包括具有优异的电特性和高可靠性的薄膜晶体管的半导体器件，以及可以以高生产率制造半导体器件的方法。 要点是在栅极绝缘层的表面进行氧自由基处理。 因此，在栅极绝缘层与半导体层之间的界面处存在氧浓度的峰值，并且栅极绝缘层的氧浓度具有浓度梯度。 氧浓度朝向栅极绝缘层和半导体层之间的界面增加。

公开(公告)号：US20140246674A1

公开(公告)日：2014-09-04

申请号：US14278634

申请日：2014-05-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Yusuke NONAKA ,  Takayuki INOUE ,  Masashi TSUBUKU ,  Kengo AKIMOTO ,  Akiharu MIYANAGA

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/78603

Abstract: An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.

Abstract translation: 本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。 通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（ 使用第一材料膜作为核的结晶氧化物半导体膜）。 作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

公开(公告)号：US20140087517A1

公开(公告)日：2014-03-27

申请号：US14095189

申请日：2013-12-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/66

CPC classification number: H01L29/66742 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/7869

Abstract: An object is to prevent an impurity such as moisture and oxygen from being mixed into an oxide semiconductor and suppress variation in semiconductor characteristics of a semiconductor device in which an oxide semiconductor is used. Another object is to provide a semiconductor device with high reliability. A gate insulating film provided over a substrate having an insulating surface, a source and a drain electrode which are provided over the gate insulating film, a first oxide semiconductor layer provided over the source electrode and the drain electrode, and a source and a drain region which are provided between the source electrode and the drain electrode and the first oxide semiconductor layer are provided. A barrier film is provided in contact with the first oxide semiconductor layer.

Abstract translation: 本发明的目的是防止诸如水分和氧气的杂质混入氧化物半导体中并抑制其中使用氧化物半导体的半导体器件的半导体特性的变化。 另一个目的是提供一种具有高可靠性的半导体器件。 提供在具有绝缘表面的衬底上的栅极绝缘膜，设置在栅极绝缘膜上的源极和漏极，设置在源电极和漏极上的第一氧化物半导体层，以及源极和漏极区 设置在源电极和漏电极之间以及第一氧化物半导体层。 提供与第一氧化物半导体层接触的阻挡膜。

公开(公告)号：US20130334525A1

公开(公告)日：2013-12-19

申请号：US13971944

申请日：2013-08-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hidekazu MIYAIRI ,  Takeshi OSADA ,  Kengo AKIMOTO ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/78648

Abstract: As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal lines are increased, there occurs a problem that it is difficult to mount an IC chip including a driver circuit for driving the gate and signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided over the same substrate, and at least part of the driver circuit includes a thin film transistor using an oxide semiconductor interposed between gate electrodes provided above and below the oxide semiconductor. Therefore, when the pixel portion and the driver circuit are provided over the same substrate, manufacturing cost can be reduced.

Abstract translation: 作为显示装置具有更高的清晰度，像素数，栅极线和信号线的数量增加。 当栅极线和信号线的数量增加时，存在难以安装包括用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，由此增加制造成本的问题。 用于驱动像素部分的像素部分和驱动电路设置在相同的基板上，驱动电路的至少一部分包括薄膜晶体管，该薄膜晶体管使用介于氧化物半导体上方和下方的栅电极之间的氧化物半导体。 因此，当像素部分和驱动电路设置在相同的基板上时，可以降低制造成本。