公开(公告)号：US20180275474A1

公开(公告)日：2018-09-27

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Seiji YASUMOTO ,  Hiroki ADACHI ,  Masataka SATO ,  Koji KUSUNOKI ,  Yoshiharu HIRAKATA

IPC: G02F1/1362 ,  G06F3/041 ,  G02F1/1333 ,  H01L27/12

CPC classification number: G02F1/136286 ,  G02F1/13338 ,  G06F3/0412 ,  G06F2203/04103 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1248 ,  H01L27/1255

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US20170236846A1

公开(公告)日：2017-08-17

申请号：US15588085

申请日：2017-05-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kenichi OKAZAKI ,  Masataka NAKADA ,  Masahiro KATAYAMA

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/51 ,  H01L29/24 ,  H01L29/49 ,  H01L29/786 ,  H01L49/02

CPC classification number: H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L28/60 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/518 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869

Abstract: A semiconductor device includes a transistor and a capacitor. The transistor includes a first conductive film; a first insulating film including a film containing hydrogen; a second insulating film including an oxide insulating film; an oxide semiconductor film including a first region and a pair of second regions; a pair of electrodes; a gate insulating film; and a second conductive film. The capacitor includes a lower electrode, an inter-electrode insulating film, and an upper electrode. The lower electrode contains the same material as the first conductive film. The inter-electrode insulating film includes a third insulating film containing the same material as the first insulating film and a fourth insulating film containing the same material as the gate insulating film. The upper electrode contains the same material as the second conductive film. A fifth insulating film containing hydrogen is provided over the transistor.

公开(公告)号：US20160254291A1

公开(公告)日：2016-09-01

申请号：US15151539

申请日：2016-05-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA

IPC: H01L27/12 ,  G02F1/1339 ,  G02F1/1337 ,  G02F1/1335 ,  G02F1/1343 ,  H01L27/32 ,  G02F1/1333

CPC classification number: H01L21/76861 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13439 ,  H01L21/76816 ,  H01L23/373 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/326 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.

公开(公告)号：US20150270403A1

公开(公告)日：2015-09-24

申请号：US14659792

申请日：2015-03-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Yasutaka NAKAZAWA ,  Masatoshi YOKOYAMA ,  Masahiko HAYAKAWA ,  Kenichi OKAZAKI ,  Shunsuke KOSHIOKA

IPC: H01L29/786 ,  H01L29/04 ,  G09G5/00 ,  H01L27/12 ,  G06F3/047 ,  H01L29/24 ,  H01L29/45

CPC classification number: H01L29/7869 ,  G06F3/041 ,  G09G3/20 ,  G09G3/3674 ,  G09G3/3677 ,  G09G3/3685 ,  G09G3/3688 ,  G09G5/003 ,  G09G2300/0404 ,  G09G2300/0426 ,  G09G2310/0267 ,  G09G2310/0275 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606

Abstract: A semiconductor device including a transistor and a wiring electrically connected to the transistor each of which has excellent electrical characteristics because of specific structures thereover is provided. A first conductive film, a first insulating film over the first conductive film, a second conductive film over the first insulating film, a second insulating film over the second conductive film, a third conductive film electrically connected to the first conductive film through an opening provided in the first insulating film and the second insulating film, and a third insulating film over the third conductive film are provided. The third conductive film includes indium, tin, and oxygen, and the third insulating film includes silicon and nitrogen and the number of ammonia molecules released from the third insulating film is less than or equal to 1×1015 molecules/cm3 by thermal desorption spectroscopy.

Abstract translation: 提供一种包括晶体管和电连接到晶体管的布线的半导体器件，其中由于其特定结构而具有优异的电特性。 第一导电膜，第一导电膜上的第一绝缘膜，第一绝缘膜上的第二导电膜，第二导电膜上的第二绝缘膜，通过开口电连接到第一导电膜的第三导电膜 在第一绝缘膜和第二绝缘膜中，并且在第三导电膜上设置第三绝缘膜。 第三导电膜包括铟，锡和氧，第三绝缘膜包括硅和氮，并且通过热解吸光谱法从第三绝缘膜释放的氨分子的数量小于或等于1×1015分子/ cm 3。

公开(公告)号：US20150171115A1

公开(公告)日：2015-06-18

申请号：US14564156

申请日：2014-12-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA

IPC: H01L27/12

CPC classification number: H01L21/76861 ,  G02F1/133345 ,  G02F1/133553 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/13439 ,  H01L21/76816 ,  H01L23/373 ,  H01L23/522 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5283 ,  H01L27/115 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1259 ,  H01L27/326 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device provided with a plurality of kinds of transistors with different device structures suitable for functions of circuits is provided. The semiconductor device includes first to third transistors with different device structures over one substrate. A semiconductor layer of the first transistor is an oxide semiconductor film with a stacked-layer structure, and a semiconductor layer of each of the second and third transistors is an oxide semiconductor film with a single-layer structure. Each of the first and second transistors includes a back gate electrode connected to its gate electrode.

Abstract translation: 提供一种半导体器件，其具有多种具有适合电路功能的不同器件结构的晶体管。 半导体器件包括在一个衬底上具有不同器件结构的第一至第三晶体管。 第一晶体管的半导体层是层叠结构的氧化物半导体膜，第二和第三晶体管的半导体层是具有单层结构的氧化物半导体膜。 第一和第二晶体管中的每一个包括连接到其栅电极的背栅电极。

公开(公告)号：US20150155387A1

公开(公告)日：2015-06-04

申请号：US14556769

申请日：2014-12-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro KATAYAMA ,  Chieko MISAWA ,  Yuka YOKOYAMA ,  Hironobu TAKAHASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  H01L29/51 ,  H01L29/49

CPC classification number: H01L29/7869 ,  G02F1/1368 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/78606

Abstract: A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive film, a first insulating film over the first conductive film, an oxide semiconductor film which is over the first insulating film and overlaps with the first conductive film, a second insulating film over the oxide semiconductor film, and a pair of second conductive films electrically connected to the oxide semiconductor film through an opening portion included in the second insulating film. The second insulating film overlaps with a region of the oxide insulating film in which a carrier flows between the pair of second conductive films and overlaps with end portions of the oxide semiconductor film.

Abstract translation: 提供了一种使用用于背板的氧化物半导体膜的高度可靠的半导体器件。 半导体器件包括第一导电膜，第一导电膜上的第一绝缘膜，在第一绝缘膜之上并与第一导电膜重叠的氧化物半导体膜，氧化物半导体膜上的第二绝缘膜，以及 一对第二导电膜通过包含在第二绝缘膜中的开口部与氧化物半导体膜电连接。 第二绝缘膜与载体在一对第二导电膜之间流动并与氧化物半导体膜的端部重叠的氧化物绝缘膜的区域重叠。

公开(公告)号：US20150108474A1

公开(公告)日：2015-04-23

申请号：US14519524

申请日：2014-10-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiroyuki MIYAKE ,  Masahiro KATAYAMA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L29/78606 ,  H01L29/78648 ,  H01L29/7869

Abstract: Provided is a display device with high display quality. The display device includes a transistor over a substrate, an inorganic insulating film over the transistor, an organic insulating film over the inorganic insulating film, a capacitor electrically connected to the transistor, and a pixel electrode over the organic insulating film. The transistor includes a gate electrode over the substrate, an oxide semiconductor film overlapping with the gate electrode, a gate insulating film in contact with one surface of the oxide semiconductor film, and a pair of conductive films in contact with the oxide semiconductor film. The capacitor includes a metal oxide film over the gate insulating film, the inorganic insulating film, and a first light-transmitting conductive film over the inorganic insulating film. The pixel electrode is formed of a second light-transmitting conductive film and in contact with one of the pair of conductive films and the first light-transmitting conductive film.

Abstract translation: 提供具有高显示质量的显示装置。 显示装置包括在基板上的晶体管，晶体管上的无机绝缘膜，无机绝缘膜上的有机绝缘膜，电连接到晶体管的电容器和有机绝缘膜上的像素电极。 晶体管包括在衬底上的栅电极，与栅电极重叠的氧化物半导体膜，与氧化物半导体膜的一个表面接触的栅绝缘膜和与氧化物半导体膜接触的一对导电膜。 该电容器包括栅极绝缘膜上的金属氧化物膜，无机绝缘膜和无机绝缘膜上的第一透光导电膜。 像素电极由第二透光性导电膜形成，并与一对导电膜和第一透光性导电膜中的一方接触。

公开(公告)号：US20240423027A1

公开(公告)日：2024-12-19

申请号：US18706407

申请日：2022-11-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daiki NAKAMURA ,  Nozomu SUGISAWA ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12 ,  H10K59/38 ,  H10K71/60 ,  H10K102/00

Abstract: A display device with high display quality is provided. The display device includes a first organic insulating layer, a first inorganic insulating layer and a second inorganic insulating layer over the first organic insulating layer, a first light-emitting element, a second light-emitting element, and a second organic insulating layer. The first light-emitting element includes a first pixel electrode over the first inorganic insulating layer, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting element includes a second pixel electrode over the second inorganic insulating layer, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer. The second organic insulating layer is provided between the first EL layer and the second EL layer, and the common electrode is provided over the second organic insulating layer. The first organic insulating layer includes a depressed portion in a region overlapping with the second organic insulating layer, the first inorganic insulating layer includes a first projecting portion overlapping with the depressed portion, and the second inorganic insulating layer includes a second projecting portion overlapping with the depressed portion.

公开(公告)号：US20240040846A1

公开(公告)日：2024-02-01

申请号：US18264476

申请日：2022-01-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Rai SATO ,  Masahiro KATAYAMA ,  Naoto GOTO ,  Yasutaka NAKAZAWA ,  Kenichi OKAZAKI

IPC: H10K59/122 ,  H10K59/12

CPC classification number: H10K59/122 ,  H10K59/1201 ,  H10K59/35

Abstract: A display device with high resolution is provided. A display device with a high aperture ratio is provided. The display device includes a first pixel electrode, a second pixel electrode, a first insulating layer, a second insulating layer, a first EL layer, a second EL layer, and a common electrode. The first insulating layer covers end portions of the first pixel electrode and the second pixel electrode. The second insulating layer is provided over the first pixel electrode, the second pixel electrode, and the first insulating layer and covers an end portion of the first insulating layer. The first EL layer is provided over the first pixel electrode and the second EL layer is provided over the second pixel electrode. An end portion of the first EL layer and an end portion of the second EL layer face each other and overlap with the first insulating layer. The common electrode includes a portion overlapping with the first EL layer and a portion overlapping with the second EL layer. The first insulating layer includes an organic resin, and the second insulating layer includes an inorganic insulating material.

公开(公告)号：US20190288092A1

公开(公告)日：2019-09-19

申请号：US16344177

申请日：2017-10-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masahiro KATAYAMA ,  Masayoshi DOBASHI ,  Masataka NAKADA

IPC: H01L29/66 ,  H01L29/786

Abstract: A semiconductor device is manufactured with high mass productivity at low cost. Yield in a manufacturing process of the semiconductor device is improved. An island-shaped metal oxide layer is formed over a substrate, a resin layer is formed over the metal oxide layer to cover an end portion of the metal oxide layer, and the metal oxide layer and the resin layer are separated by light irradiation. After forming the resin layer and before the light irradiation, an insulating layer is formed over the resin layer. For example, the resin layer is formed in an island shape and the insulating layer is formed to cover an end portion of the resin layer. In the case where an adhesive layer is formed over the resin layer, the adhesive layer is preferably formed to be located inward from the end portion of the metal oxide layer.