公开(公告)号：US10861733B2

公开(公告)日：2020-12-08

申请号：US15664367

申请日：2017-07-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Seiji Yasumoto ,  Naoki Ikezawa ,  Satoru Idojiri ,  Shunpei Yamazaki

IPC: H01L27/12 ,  H01L21/683 ,  H01L21/78 ,  H01L21/48 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/1368 ,  H01L27/32 ,  H01L51/00 ,  H01L51/56

Abstract: The yield of a manufacturing process of a display device is increased. The productivity of a display device is increased. A hydrogen-containing layer is formed over a substrate. Then, an oxygen-containing layer is formed over the hydrogen-containing layer. After that, a first layer is formed over the oxygen-containing layer with the use of a material containing a resin or a resin precursor. Subsequently, first heat treatment is performed on the first layer, so that a resin layer is formed. Next, a layer to be peeled is formed over the resin layer. The layer to be peeled and the substrate are separated from each other. The first heat treatment is performed in an oxygen-containing atmosphere.

公开(公告)号：US20150123106A1

公开(公告)日：2015-05-07

申请号：US14532634

申请日：2014-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Tomoya Aoyama ,  Ryu Komatsu

IPC: B32B43/00 ,  H01L51/00 ,  H01L51/52 ,  H01L21/311

CPC classification number: B32B43/006 ,  B32B38/10 ,  B32B2309/105 ,  B32B2315/08 ,  B32B2457/00 ,  H01L21/68757 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5262 ,  H01L2221/68386 ,  H01L2251/5338 ,  Y10T156/11 ,  Y10T156/1142 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1967 ,  Y10T156/1978

Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

Abstract translation: 剥离过程的产率提高。 在衬底上形成厚度大于或等于0.1nm且小于10nm的剥离层的第一步骤; 在剥离层上形成包含与剥离层接触的第一层的被剥离层的第二工序; 分离剥离层的部分和第一层的部分以形成剥离触发器的第三步骤; 并且进行剥离剥离层和被剥离层的第四工序。 无论剥离层的结构如何，使用薄的剥离层可以提高剥离过程的产量。

公开(公告)号：US10930870B2

公开(公告)日：2021-02-23

申请号：US16842820

申请日：2020-04-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masakatsu Ohno ,  Kayo Kumakura ,  Hiroyuki Watanabe ,  Seiji Yasumoto ,  Satoru Idojiri ,  Hiroki Adachi

IPC: H01L51/00 ,  H01L27/12 ,  H01L27/32 ,  H01L51/52 ,  H01L29/786

Abstract: The yield of a separation process is improved. The mass productivity of a display device which is formed through a separation process is improved. A layer is formed over a substrate with use of a material including a resin or a resin precursor. Next, a resin layer is formed by performing heat treatment on the layer. Next, a layer to be separated is formed over the resin layer. Then, the layer to be separated and the substrate are separated from each other. The heat treatment is performed in an atmosphere containing oxygen or while supplying a gas containing oxygen.

公开(公告)号：US10369664B2

公开(公告)日：2019-08-06

申请号：US15707017

申请日：2017-09-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Seiji Yasumoto ,  Naoto Goto ,  Satoru Idojiri

IPC: B23K26/57 ,  G02F1/1362 ,  H01L27/12 ,  H01L27/32 ,  H01L51/00 ,  G02F1/136

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The mass productivity of the semiconductor device is increased. The semiconductor device is manufactured by performing a step of performing plasma treatment on a first surface of a substrate; a step of forming a first layer over the first surface with the use of a material containing a resin or a resin precursor; a step of forming a resin layer by performing heat treatment on the first layer; and a step of separating the substrate and the resin layer from each other. In the plasma treatment, the first surface is exposed to an atmosphere containing one or more of hydrogen, oxygen, and water vapor.

公开(公告)号：US10345668B2

公开(公告)日：2019-07-09

申请号：US15987952

申请日：2018-05-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka Nakada ,  Masahiro Katayama ,  Seiji Yasumoto ,  Hiroki Adachi ,  Masataka Sato ,  Koji Kusunoki ,  Yoshiharu Hirakata

IPC: G02F1/1333 ,  G06F3/041 ,  G02F1/1362 ,  H01L27/12

Abstract: Provided is a novel display panel that is highly convenient or highly reliable, a novel input/output device that is highly convenient or highly reliable, or a method for manufacturing a novel display panel that is highly convenient or highly reliable. The present inventors conceived a structure including a first intermediate film, a first electrode including a region in contact with the first intermediate film, a pixel that includes a first display element including the first electrode and a pixel circuit electrically connected to the first display element, a signal line electrically connected to the pixel, and a terminal that includes a third conductive film electrically connected to the signal line and a second intermediate film including a region in contact with the third conductive film.

公开(公告)号：US10141526B2

公开(公告)日：2018-11-27

申请号：US15252295

申请日：2016-08-31

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B7/02 ,  B32B37/02 ,  B32B37/18 ,  B32B38/10 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B27/20 ,  B32B27/28 ,  B32B27/30 ,  B32B27/32 ,  B32B27/34 ,  B32B27/36 ,  B32B7/06 ,  B32B17/06 ,  B32B37/10 ,  B32B37/12 ,  H01L51/52

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US10079353B2

公开(公告)日：2018-09-18

申请号：US15810249

申请日：2017-11-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Sakuishi ,  Yutaka Uchida ,  Hiroki Adachi ,  Saki Eguchi ,  Junpei Yanaka ,  Kayo Kumakura ,  Seiji Yasumoto ,  Kohei Yokoyama ,  Akihiro Chida

IPC: H01L51/00 ,  B32B37/02 ,  B32B37/10 ,  B32B37/18

CPC classification number: H01L51/0097 ,  B32B7/02 ,  B32B7/06 ,  B32B7/12 ,  B32B15/08 ,  B32B15/18 ,  B32B15/20 ,  B32B17/00 ,  B32B17/06 ,  B32B27/20 ,  B32B27/286 ,  B32B27/30 ,  B32B27/325 ,  B32B27/34 ,  B32B27/36 ,  B32B27/365 ,  B32B37/02 ,  B32B37/10 ,  B32B37/1292 ,  B32B37/18 ,  B32B38/10 ,  B32B2250/05 ,  B32B2255/20 ,  B32B2260/021 ,  B32B2260/046 ,  B32B2264/102 ,  B32B2307/202 ,  B32B2307/40 ,  B32B2307/50 ,  B32B2307/536 ,  B32B2307/558 ,  B32B2310/0843 ,  B32B2315/08 ,  B32B2457/20 ,  H01L51/003 ,  H01L51/5253 ,  H01L2251/5338 ,  Y02E10/549 ,  Y02P70/521

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

公开(公告)号：US09947568B2

公开(公告)日：2018-04-17

申请号：US14182834

申请日：2014-02-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Shingo Eguchi ,  Kunihiko Suzuki

IPC: B32B43/00 ,  H01L21/67 ,  H01L21/683 ,  H01L51/00 ,  B32B38/10 ,  H01L51/50

CPC classification number: H01L21/6836 ,  B32B38/10 ,  H01L21/67132 ,  H01L21/6835 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/50 ,  H01L2221/68318 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2221/68381 ,  H01L2221/68386 ,  Y10T156/1712

Abstract: To improve peelability, yield in a peeling step, and yield in manufacturing a flexible device. A peeling method is employed which includes a first step of forming a peeling layer containing tungsten over a support substrate; a second step of forming, over the peeling layer, a layer to be peeled formed of a stack including a first layer containing silicon oxynitride and a second layer containing silicon nitride in this order and forming an oxide layer containing tungsten oxide between the peeling layer and the layer to be peeled; a third step of forming a compound containing tungsten and nitrogen in the oxide layer by heat treatment; and a fourth step of peeling the peeling layer from the layer to be peeled at the oxide layer.

公开(公告)号：US09937698B2

公开(公告)日：2018-04-10

申请号：US14532634

申请日：2014-11-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Seiji Yasumoto ,  Masataka Sato ,  Tomoya Aoyama ,  Ryu Komatsu

IPC: B32B38/10 ,  B32B43/00 ,  H01L51/00 ,  H01L21/687 ,  H01L51/52 ,  H01L27/32

CPC classification number: B32B43/006 ,  B32B38/10 ,  B32B2309/105 ,  B32B2315/08 ,  B32B2457/00 ,  H01L21/68757 ,  H01L27/3244 ,  H01L51/003 ,  H01L51/0097 ,  H01L51/5237 ,  H01L51/5262 ,  H01L2221/68386 ,  H01L2251/5338 ,  Y10T156/11 ,  Y10T156/1142 ,  Y10T156/1168 ,  Y10T156/1184 ,  Y10T156/1967 ,  Y10T156/1978

Abstract: The yield of a peeling process is improved. A first step of forming a peeling layer to a thickness of greater than or equal to 0.1 nm and less than 10 nm over a substrate; a second step of forming, on the peeling layer, a layer to be peeled including a first layer in contact with the peeling layer; a third step of separating parts of the peeling layer and parts of the first layer to form a peeling trigger; and a fourth step of separating the peeling layer and the layer to be peeled are performed. The use of the thin peeling layer can improve the yield of a peeling process regardless of the structure of the layer to be peeled.

公开(公告)号：US09281410B2

公开(公告)日：2016-03-08

申请号：US13794085

申请日：2013-03-11

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kenichi Okazaki ,  Seiji Yasumoto ,  Shun Mashiro ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L29/49 ,  H01L21/00 ,  H01L29/66

CPC classification number: H01L29/78696 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a semiconductor device including an oxide semiconductor includes the steps of forming an oxide semiconductor film, forming a gate insulating film provided over the oxide semiconductor film, forming a gate electrode in contact with the gate insulating film, a sidewall insulating film in contact with the gate electrode, and forming a source electrode and a drain electrode in contact with the oxide semiconductor film. In the method, the gate insulating film and the sidewall insulating film are formed at a temperature at which oxygen contained in the oxide semiconductor film is inhibited from being eliminated, preferably at a temperature lower than a temperature at which oxygen contained in the oxide semiconductor film is eliminated.

Abstract translation: 一种制造包括氧化物半导体的半导体器件的方法包括以下步骤：形成氧化物半导体膜，形成设置在氧化物半导体膜上的栅极绝缘膜，形成与栅极绝缘膜接触的栅电极， 与栅电极接触，形成与氧化物半导体膜接触的源电极和漏电极。 在该方法中，在氧化物半导体膜中包含的氧被抑制的温度下，优选在低于氧化物半导体膜中所含的氧的温度的温度下形成栅极绝缘膜和侧壁绝缘膜 被淘汰。