公开(公告)号：US12302639B2

公开(公告)日：2025-05-13

申请号：US18616481

申请日：2024-03-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Noritaka Ishihara ,  Masashi Oota

IPC: H01L27/12 ,  C23C14/08 ,  G01N23/207 ,  G02F1/1368 ,  H01L21/66 ,  H10D30/67 ,  H10D62/40 ,  H10D62/80 ,  H10D86/40 ,  H10D86/60 ,  H10D99/00 ,  H01L21/02

Abstract: A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

公开(公告)号：US11309430B2

公开(公告)日：2022-04-19

申请号：US16905999

申请日：2020-06-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichiro Sakata ,  Takuya Hirohashi ,  Hideyuki Kishida

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/423 ,  H01L29/49 ,  H01L29/10 ,  H01L21/02 ,  H01L27/12 ,  H01L29/66 ,  H01L29/08 ,  H01L29/24

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.

公开(公告)号：US10749174B2

公开(公告)日：2020-08-18

申请号：US16114312

申请日：2018-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro Kawakami ,  Teruaki Ochiai ,  Shuhei Yoshitomi ,  Takuya Hirohashi ,  Mako Motoyoshi ,  Yohei Momma ,  Junya Goto

IPC: H01M4/13 ,  H01M4/505 ,  H01M4/36 ,  H01M4/131 ,  H01M4/1391

Abstract: To increase capacity per weight of a power storage device, a particle includes a first region, a second region in contact with at least part of a surface of the first region and located on the outside of the first region, and a third region in contact with at least part of a surface of the second region and located on the outside of the second region. The first and the second regions contain lithium and oxygen. At least one of the first region and the second region contains manganese. At least one of the first and the second regions contains an element M. The first region contains a first crystal having a layered rock-salt structure. The second region contains a second crystal having a layered rock-salt structure. An orientation of the first crystal is different from an orientation of the second crystal.

公开(公告)号：US10374030B2

公开(公告)日：2019-08-06

申请号：US15687061

申请日：2017-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Masashi Oota

IPC: H01L29/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/24 ,  H01L29/26

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US10026966B2

公开(公告)日：2018-07-17

申请号：US13691929

申请日：2012-12-03

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tetsuya Kakehata ,  Ryota Tajima ,  Teppei Oguni ,  Takeshi Osada ,  Shunpei Yamazaki ,  Shunsuke Adachi ,  Takuya Hirohashi

IPC: H01M4/70 ,  H01M4/04 ,  H01M4/66 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/36 ,  H01M4/62 ,  B82Y30/00 ,  H01M10/052 ,  H01M4/02

Abstract: A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene.

公开(公告)号：US09911853B2

公开(公告)日：2018-03-06

申请号：US15232896

申请日：2016-08-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu Miyanaga ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Motoki Nakashima ,  Masahiro Takahashi ,  Shunsuke Adachi ,  Takuya Hirohashi

IPC: H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

公开(公告)号：US09859401B2

公开(公告)日：2018-01-02

申请号：US14586056

申请日：2014-12-30

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Takuya Hirohashi ,  Masahiro Takahashi ,  Takashi Shimazu

IPC: H01L31/112 ,  H01L21/00 ,  H01L29/66 ,  H01L21/02 ,  H01L27/12 ,  H01L29/786

CPC classification number: H01L29/66742 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02502 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/02667 ,  H01L27/1225 ,  H01L29/66969 ,  H01L29/7869

Abstract: A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

公开(公告)号：US09748328B2

公开(公告)日：2017-08-29

申请号：US15063733

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Masashi Oota

IPC: H01L29/00 ,  H01L29/04 ,  H01L29/24 ,  H01L29/26 ,  H01L29/786

CPC classification number: H01L29/04 ,  H01L29/045 ,  H01L29/24 ,  H01L29/247 ,  H01L29/26 ,  H01L29/7869 ,  H01L29/78693

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US09601562B2

公开(公告)日：2017-03-21

申请号：US15063733

申请日：2016-03-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Masahiro Takahashi ,  Takuya Hirohashi ,  Masashi Tsubuku ,  Masashi Oota

IPC: H01L29/00 ,  H01L29/04 ,  H01L29/786 ,  H01L29/24 ,  H01L29/26

Abstract: A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer.

公开(公告)号：US09443987B2

公开(公告)日：2016-09-13

申请号：US14456069

申请日：2014-08-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akiharu Miyanaga ,  Yasuharu Hosaka ,  Toshimitsu Obonai ,  Junichi Koezuka ,  Motoki Nakashima ,  Masahiro Takahashi ,  Shunsuke Adachi ,  Takuya Hirohashi

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/12 ,  H01L29/786 ,  H01L29/24 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device using a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The semiconductor device includes a gate electrode over an insulating surface; an oxide semiconductor film overlapping with the gate electrode; a gate insulating film that is between the gate electrode and the oxide semiconductor film and in contact with the oxide semiconductor film; a protective film in contact with a surface of the oxide semiconductor film that is an opposite side of a surface in contact with the gate insulating film; and a pair of electrodes in contact with the oxide semiconductor film. The spin density of the gate insulating film or the protective film measured by electron spin resonance spectroscopy is lower than 1×1018 spins/cm3, preferably higher than or equal to 1×1017 spins/cm3 and lower than 1×1018 spins/cm3.

Abstract translation: 在使用包括氧化物半导体的晶体管的半导体器件中，电特性的变化被抑制并提高了可靠性。 半导体器件包括绝缘表面上的栅电极; 与所述栅电极重叠的氧化物半导体膜; 栅极绝缘膜，位于栅电极和氧化物半导体膜之间并与氧化物半导体膜接触; 与氧化物半导体膜的与栅极绝缘膜接触的表面的相反侧的表面接触的保护膜; 以及与氧化物半导体膜接触的一对电极。 通过电子自旋共振光谱测定的栅极绝缘膜或保护膜的自旋密度低于1×1018自旋/ cm3，优选为1×1017以上/ cm3以上，低于1×1018自旋/ cm3。