公开(公告)号：US20220158031A1

公开(公告)日：2022-05-19

申请号：US17536074

申请日：2021-11-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seong Kyu Jang ,  Chan Seob Shin ,  Seom Geun Lee ,  Ho Joon Lee

IPC: H01L33/24 ,  H01L33/62 ,  H01L25/075

Abstract: A method of fabricating a light emitting device for a display, the method including the steps of growing a first LED stack on a first growth substrate, the first LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, growing a second LED stack on a second growth substrate, the second LED stack including a first conductivity type semiconductor layer and a second conductivity type semiconductor layer, bonding the second LED stack to a first temporary substrate, removing the second growth substrate from the second LED stack, bonding the second LED stack to the first LED stack, and removing the first temporary substrate from the second LED stack.

公开(公告)号：US11239387B2

公开(公告)日：2022-02-01

申请号：US16246192

申请日：2019-01-11

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju Lee ,  Seom Geun Lee ,  Kyoung Wan Kim ,  Yong Woo Ryu ,  Mi Na Jang

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/06 ,  H01L27/15 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

公开(公告)号：US11220758B2

公开(公告)日：2022-01-11

申请号：US15623345

申请日：2017-06-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yi Jung Kim ,  Seom Geun Lee ,  Young Deuk Park ,  Ki Suk Kim

IPC: H01L21/02 ,  C30B7/10 ,  C30B29/16 ,  H01L33/42

Abstract: Devices, systems and methods for fabricating semiconductor material devices by placing a batch of wafers in a chemical solution within a growth chamber. The wafers are held in a vertical direction and are actuated to move within the chemical solution while growing a layer over exposed surfaces of the wafers.

公开(公告)号：US11063185B2

公开(公告)日：2021-07-13

申请号：US16518169

申请日：2019-07-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Chan Seob Shin

IPC: H01L33/42 ,  H01L33/38 ,  H01L33/00 ,  H01L33/32

Abstract: A light emitting diode with a zinc oxide layer and a method of fabricating the same are disclosed. The light emitting diode includes: a light emitting structure including a gallium nitride based first conductivity type semiconductor layer, a gallium nitride based second conductivity type semiconductor layer, and an active layer interposed therebetween; and a ZnO transparent electrode layer disposed on the second conductivity type semiconductor layer, wherein the ZnO transparent electrode layer comprises a ZnO seed layer and a ZnO bulk layer formed on the ZnO seed layer, wherein the ZnO bulk layer is porous compared to the ZnO seed layer, wherein an interface between the ZnO seed layer and the second conductivity type semiconductor layer is flatter than an interface between the ZnO seed layer and the ZnO bulk layer, and wherein the interface between the ZnO seed layer and the ZnO bulk layer has an irregular concavo-convex shape.

公开(公告)号：US10559715B2

公开(公告)日：2020-02-11

申请号：US16259478

申请日：2019-01-28

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/20

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US20180323346A1

公开(公告)日：2018-11-08

申请号：US15757636

申请日：2016-08-23

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong Lee ,  Chan Seob Shin ,  Keum Ju Lee ,  Seom Geun Lee ,  Myoung Hak Yang

IPC: H01L33/42 ,  H01L33/10 ,  H01L33/32 ,  H01L33/62 ,  G02F1/1335

CPC classification number: H01L33/42 ,  G02F1/133603 ,  H01L33/007 ,  H01L33/10 ,  H01L33/32 ,  H01L33/325 ,  H01L33/387 ,  H01L33/62 ,  H01L2933/0016

Abstract: A light-emitting electrode having a ZnO transparent electrode and a method for manufacturing the same are provided. A light-emitting element according to an embodiment comprises: a light-emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; and a ZnO transparent electrode, which is positioned on the second conductive semiconductor layer, which makes an Ohmic contact with the second conductive semiconductor layer, and which comprises monocrystalline ZnO, wherein the diffraction angle of a peak of the ZnO transparent electrode, which results from X-ray diffraction (XRD) omega 2theta (ω2θ) scan, is in the range of ±1% with regard to the diffraction angle of a peak of the second conductive semiconductor layer, which results from XRD ω2θ scan, and the FWHM of a main peak of the ZnO transparent electrode, which results from XRD omega (ω) scan, is equal to or less than 900 arcsec.

公开(公告)号：US09905729B2

公开(公告)日：2018-02-27

申请号：US15354928

申请日：2016-11-17

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Mae Yi Kim ,  Jin Woong Lee ,  Yeo Jin Yoon ,  Seom Geun Lee ,  Yong Woo Ryu ,  Keum Ju Lee

IPC: H01L33/38 ,  H01L33/62 ,  H01L33/14 ,  H01L33/42 ,  H01L33/32

CPC classification number: H01L33/145 ,  H01L33/20 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode is provided to comprises: a substrate that has an elongated rectangular shape in one direction; a light emitting structure positioned on the substrate and having an opening for exposing a first conductive semiconductor layer; a first electrode pad disposed to be closer to a first corner of the substrate; a second electrode pad disposed to be relatively closer to a second corner of the substrate opposing to the first corner; a first extension extending from the first electrode pad; and a second extension and a third extension extending from the second electrode pad to sides of the first extension, wherein an imaginary line connecting an end of the second extension and an end of the third extension is located between the first electrode pad and the first corner.

公开(公告)号：US09893051B2

公开(公告)日：2018-02-13

申请号：US14991829

申请日：2014-07-10

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Seom Geun Lee ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  So Ra Lee ,  Myoung Hak Yang

IPC: H01L27/02 ,  H01L33/62 ,  H01L27/15 ,  H01L33/40 ,  H01L25/16 ,  H01L33/06 ,  H01L33/32 ,  H01L33/44

CPC classification number: H01L27/0255 ,  H01L25/167 ,  H01L27/15 ,  H01L33/06 ,  H01L33/32 ,  H01L33/405 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed herein is a light emitting diode chip having ESD protection. An exemplary embodiment provides a flip-chip type light emitting diode chip, which includes a light emitting diode part aligned on a substrate, and a reverse-parallel diode part disposed on the substrate and connected to the light emitting diode part. Within the flip-chip type light emitting diode chip, the light emitting diode part is placed together with reverse-parallel diode part, thereby providing a light emitting diode chip exhibiting strong resistance to electrostatic discharge.

公开(公告)号：US20170365758A1

公开(公告)日：2017-12-21

申请号：US15623345

申请日：2017-06-14

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Yi Jung Kim ,  Seom Geun Lee ,  Young Deuk Park ,  Ki Suk Kim

IPC: H01L33/58 ,  H01L33/44 ,  C30B7/10 ,  H01L21/02 ,  C30B29/16 ,  H01L33/32

CPC classification number: C30B7/10 ,  C30B29/16 ,  H01L21/02458 ,  H01L21/02554 ,  H01L21/02628 ,  H01L33/42 ,  H01L2933/0016

Abstract: Devices, systems and methods for fabricating semiconductor material devices by placing a batch of wafers in a chemical solution within a growth chamber. The wafers are held in a vertical direction and are actuated to move within the chemical solution while growing a layer over exposed surfaces of the wafers.

公开(公告)号：US09634061B2

公开(公告)日：2017-04-25

申请号：US15150863

申请日：2016-05-10

Applicant: Seoul Viosys Co., Ltd.

Inventor： Seom Geun Lee ,  Jong Kyu Kim ,  Yeo Jin Yoon ,  Jae Kwon Kim ,  Mae Yi Kim

IPC: H01L33/00 ,  H01L27/15 ,  H01L33/62 ,  H01L33/42 ,  H01L33/08 ,  H01L33/46 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/14 ,  H01L33/44

CPC classification number: H01L27/15 ,  H01L27/156 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/06 ,  H01L33/08 ,  H01L33/10 ,  H01L33/14 ,  H01L33/145 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0066 ,  H01L2924/00

Abstract: A light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other to expose a surface of the substrate, a first transparent layer disposed on and electrically connected to the first light emitting cell, first connection section disposed on a portion of the first light emitting cell, a second connection section disposed on a portion of the second light emitting cell, a first interconnection and a second interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the first and second interconnections and a side surface of the first light emitting cell.