公开(公告)号：US09991301B2

公开(公告)日：2018-06-05

申请号：US15111003

申请日：2015-01-26

Applicant: SONY CORPORATION

Inventor： Atsushi Yamamoto ,  Shinji Miyazawa ,  Yutaka Ooka ,  Kensaku Maeda ,  Yusuke Moriya ,  Naoki Ogawa ,  Nobutoshi Fujii ,  Shunsuke Furuse ,  Masaya Nagata ,  Yuichi Yamamoto

IPC: H01L27/00 ,  H01L27/146

CPC classification number: H01L27/14618 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/0203 ,  H01L2224/11

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip. Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.

公开(公告)号：US09530687B2

公开(公告)日：2016-12-27

申请号：US14147003

申请日：2014-01-03

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii

IPC: H01L21/762 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/1469 ,  H01L21/76251 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14645 ,  H01L27/14683 ,  H01L31/18 ,  H04N5/374 ,  Y10T428/24421

Abstract: Disclosed herein is a method of manufacturing a bonded substrate, including the steps of: forming a first bonding layer on a surface on one side of a semiconductor substrate; forming a second bonding layer on a surface on one side of a support substrate; adhering the first bonding layer and the second bonding layer to each other; a heat treatment for bonding the first bonding layer and the second bonding layer to each other; and thinning the semiconductor substrate from a surface on the other side of the semiconductor substrate to form a semiconductor layer.

Abstract translation: 这里公开了一种制造键合衬底的方法，包括以下步骤：在半导体衬底的一侧的表面上形成第一接合层; 在支撑基板的一侧的表面上形成第二结合层; 将第一接合层和第二接合层彼此粘合; 用于将第一接合层和第二接合层彼此接合的热处理; 以及从所述半导体衬底的另一侧的表面使所述半导体衬底变薄以形成半导体层。

公开(公告)号：US20160343763A1

公开(公告)日：2016-11-24

申请号：US15228894

申请日：2016-08-04

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L27/146

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

公开(公告)号：US20160035777A1

公开(公告)日：2016-02-04

申请号：US14880957

申请日：2015-10-12

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146 ,  H04N5/225

CPC classification number: H01L27/14636 ,  H01L21/2007 ,  H01L21/76823 ,  H01L21/76828 ,  H01L21/76864 ,  H01L27/14612 ,  H01L27/14618 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689 ,  H01L27/1469 ,  H04N5/2254

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

Abstract translation: 半导体器件包括具有第一电极和第一绝缘膜露出的附着面的第一基板，覆盖第一基板的安装面的绝缘薄膜和具有安装面的第二基板，第二基板 并且第二绝缘膜在第二基板的安装表面和第一基板的附接表面连接在一起的状态下暴露并附着到第一基板，夹住绝缘薄膜，并且第一电极和 第二电极使绝缘薄膜的一部分变形并断开，以便彼此直接电连接。

公开(公告)号：US20150270212A1

公开(公告)日：2015-09-24

申请号：US14718942

申请日：2015-05-21

Applicant: Sony Corporation

Inventor： Yoshihisa Kagawa ,  Kenichi Aoyagi ,  Yoshiya Hagimoto ,  Nobutoshi Fujii

IPC: H01L23/528 ,  H01L21/768 ,  H01L23/532

CPC classification number: H01L27/14636 ,  H01L21/76807 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76843 ,  H01L23/481 ,  H01L23/528 ,  H01L23/5283 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53295 ,  H01L23/564 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/80 ,  H01L24/83 ,  H01L27/0688 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/1469 ,  H01L2221/1031 ,  H01L2224/02245 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05546 ,  H01L2224/05547 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/05578 ,  H01L2224/05647 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/0903 ,  H01L2224/80011 ,  H01L2224/80013 ,  H01L2224/80091 ,  H01L2224/80097 ,  H01L2224/80203 ,  H01L2224/80345 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/83345 ,  H01L2924/00014 ,  H01L2924/12043 ,  H01L2924/13091 ,  H04N5/369 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2924/053 ,  H01L2924/049 ,  H01L2924/00 ,  H01L2224/05552

Abstract: Disclosed herein is a semiconductor device, including: a first substrate including a first electrode, and a first insulating film configured from a diffusion preventing material for the first electrode and covering a periphery of the first electrode, the first electrode and the first insulating film cooperating with each other to configure a bonding face; and a second substrate bonded to and provided on the first substrate and including a second electrode joined to the first electrode, and a second insulating film configured from a diffusion preventing material for the second electrode and covering a periphery of the second electrode, the second electrode and the second insulating film cooperating with each other to configure a bonding face to the first substrate.

Abstract translation: 本发明公开了一种半导体器件，包括：第一基板，包括第一电极和由用于第一电极的扩散防止材料构成的第一绝缘膜，并且覆盖第一电极的周边，第一电极和第一绝缘膜协作 彼此配置接合面; 以及第二基板，其接合并设置在所述第一基板上并且包括接合到所述第一电极的第二电极，以及由用于所述第二电极的扩散防止材料构成并覆盖所述第二电极的周边的第二绝缘膜，所述第二电极 并且所述第二绝缘膜彼此配合以配置到所述第一基板的接合面。

公开(公告)号：US08981368B2

公开(公告)日：2015-03-17

申请号：US13732948

申请日：2013-01-02

Applicant: Sony Corporation

Inventor： Tsutomu Shimayama ,  Nobutoshi Fujii ,  Takashige Fujimori

IPC: H01L29/10 ,  H01L29/12 ,  H01L21/00 ,  H01L21/16 ,  H01L29/786 ,  H01L27/15 ,  H01L29/66

CPC classification number: H01L29/78693 ,  H01L27/15 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78618

Abstract: A thin film transistor includes: a gate electrode, a source electrode, and a drain electrode; an oxide semiconductor layer provided on one side of the gate electrode with an insulating film in between, the oxide semiconductor layer being provided in a region not facing the source electrode and the drain electrode and being electrically connected to the source electrode and the drain electrode; and a low resistance oxide layer provided in a region facing the source electrode and in a region facing the drain electrode, the regions being adjacent to the oxide semiconductor layer, and the low resistance oxide layer having an electric resistivity lower than an electric resistivity of the oxide semiconductor layer.

Abstract translation: 薄膜晶体管包括：栅电极，源电极和漏电极; 氧化物半导体层，其设置在栅电极的一侧，其间具有绝缘膜，所述氧化物半导体层设置在不面向所述源电极和所述漏电极的区域中，并且与所述源电极和所述漏电极电连接; 以及低电阻氧化物层，其设置在面向所述源电极的区域和与所述漏电极相对的区域中，所述区域与所述氧化物半导体层相邻，并且所述低电阻氧化物层的电阻率低于所述氧化物半导体层的电阻率 氧化物半导体层。

公开(公告)号：US20140367668A1

公开(公告)日：2014-12-18

申请号：US14372702

申请日：2013-01-18

Applicant: SONY CORPORATION

Inventor： Nobutoshi Fujii ,  Hayato Iwamoto

IPC: H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  G02B3/0012 ,  H01L27/14627 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14647 ,  H01L27/14685

Abstract: A method of manufacturing a photoelectric conversion device includes: forming a first electrode on a first surface side of a substrate that has two opposing surfaces; forming an electrode section on a second surface side of the substrate, the electrode section being used for external connection; and after forming the first electrode and the electrode section, forming an organic photoelectric conversion layer and a second electrode on the first electrode.

Abstract translation: 一种制造光电转换装置的方法包括：在具有两个相对表面的基板的第一表面侧上形成第一电极; 在所述基板的第二表面侧上形成电极部，所述电极部用于外部连接; 在形成第一电极和电极部之后，在第一电极上形成有机光电转换层和第二电极。

公开(公告)号：US11342371B2

公开(公告)日：2022-05-24

申请号：US16945247

申请日：2020-07-31

Applicant: SONY CORPORATION

Inventor： Hiroyasu Matsugai ,  Hiroyuki Itou ,  Suguru Saito ,  Keiji Ohshima ,  Masanori Iwasaki ,  Toshihiko Hayashi ,  Shuzo Sato ,  Nobutoshi Fujii ,  Hiroshi Tazawa ,  Toshiaki Shiraiwa ,  Minoru Ishida

IPC: H01L27/146 ,  B29D11/00 ,  G02B13/00 ,  G02B1/11

Abstract: A deformation of a stacked lens is suppressed.
A stacked lens structure has a configuration in which substrates with lenses having a lens disposed on an inner side of a through-hole formed in the substrate are bonded and stacked by direct bonding. The present technique can be applied to a camera module or the like in which a stacked lens structure in which at least three substrates with lenses including first to third substrates with lenses which are substrates with lenses in which a through-hole is formed in the substrate and a lens is formed on an inner side of the through-hole is integrated with a light receiving element, for example.

公开(公告)号：US11107855B2

公开(公告)日：2021-08-31

申请号：US16554347

申请日：2019-08-28

Applicant: Sony Corporation

Inventor： Nobutoshi Fujii ,  Yoshiya Hagimoto ,  Kenichi Aoyagi ,  Yoshihisa Kagawa

IPC: H01L27/146 ,  H01L21/20 ,  H01L21/768 ,  H01L23/00 ,  H04N5/225

Abstract: A semiconductor device includes a first substrate having an attaching surface on which first electrodes and a first insulating film are exposed, an insulating thin film that covers the attaching surface of the first substrate, and a second substrate which has an attaching surface on which second electrodes and a second insulating film are exposed and is attached to the first substrate in a state in which the attaching surface of the second substrate and the attaching surface of the first substrate are attached together sandwiching the insulating thin film therebetween, and the first electrodes and the second electrodes deform and break a part of the insulating thin film so as to be directly electrically connected to each other.

公开(公告)号：US11024658B2

公开(公告)日：2021-06-01

申请号：US16807049

申请日：2020-03-02

Applicant: SONY CORPORATION

Inventor： Atsushi Yamamoto ,  Shinji Miyazawa ,  Yutaka Ooka ,  Kensaku Maeda ,  Yusuke Moriya ,  Naoki Ogawa ,  Nobutoshi Fujii ,  Shunsuke Furuse ,  Masaya Nagata ,  Yuichi Yamamoto

IPC: H01L27/00 ,  H01L31/00 ,  H01L27/146 ,  H01L31/0203

Abstract: The present technology relates to techniques of preventing intrusion of moisture into a chip.
Various illustrative embodiments include image sensors that include: a substrate; a plurality of layers stacked on the substrate; the plurality of layers including a photodiode layer having a plurality of photodiodes formed on a surface of the photodiode layer; the plurality of layers including at least one layer having a groove formed such that a portion of the at least one layer is excavated; and a transparent resin layer formed above the photodiode layer and formed in the groove. The present technology can be applied to, for example, an image sensor.