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公开(公告)号：US12057509B2
公开(公告)日：2024-08-06
申请号：US17544353
申请日：2021-12-07
发明人： Do Hyung Kim , Gun Hee Kim , Hyeon Sik Kim , Sang Ho Park , Joo Hee Jeon
IPC分类号： H01L29/78 , H01L29/08 , H01L29/417 , H01L29/786 , H10K59/121
CPC分类号： H01L29/78621 , H01L29/0847 , H01L29/41733 , H01L29/78648 , H01L29/7869 , H10K59/1213
摘要： A thin film transistor array panel includes a substrate, a first gate electrode on the substrate, a semiconductor layer on the first gate electrode, the semiconductor layer including a drain region, a source region, a lightly doped drain (LDD) region, and a channel region, a second gate electrode on the semiconductor layer, the first gate electrode and the second gate electrode each overlapping the channel region, a control gate electrode that overlaps the LDD region, and a source electrode and a drain electrode respectively connected with the source region and the drain region of the semiconductor layer.
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公开(公告)号：US11785824B2
公开(公告)日：2023-10-10
申请号：US17148321
申请日：2021-01-13
发明人： Jin Woo Lee , Sang Ho Park , Tae Hoon Yang , Jin Yeong Kim , Jin Taek Kim , Soo Hyun Moon , Mi Jin Park
IPC分类号： H01L25/075 , H10K59/38 , H10K50/813 , H10K50/822 , H10K50/844 , H10K59/124 , H10K71/00
CPC分类号： H10K59/38 , H10K50/813 , H10K50/822 , H10K50/844 , H10K59/124 , H10K71/00
摘要： A display device includes a first substrate including a plurality of unit light emitting areas; a first electrode and a second electrode in each of the unit light emitting areas of the first substrate; a first insulation layer exposing one region of each of the first electrode and the second electrode; a light emitting element on the first insulation layer and having a first end and a second end in a length direction; light conversion patterns adjacent to the light emitting element, covering a portion of an upper surface of the light emitting element, and exposing the first and second ends of the light emitting element; a first contact electrode on the first electrode and connecting the one region of the exposed first electrode and the first end of the light emitting element; and a second contact electrode on the second electrode.
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公开(公告)号：US11038005B2
公开(公告)日：2021-06-15
申请号：US16549638
申请日：2019-08-23
发明人： Gun Hee Kim , Sang Ho Park , Ju Won Yoon , Seung Chan Lee , Joo Hee Jeon
摘要： An organic light emitting diode (OLED) display includes a first electrode, a pixel defining layer that at least partially exposes the first electrode, an organic light emitting layer on the first electrode, a thin-film encapsulation layer on the organic light emitting layer, and a light shielding member on the thin-film encapsulation the light shielding member overlapping the pixel defining layer. The organic light emitting layer includes a main area not overlapping the pixel defining layer and a sub area overlapping the pixel defining layer. The main area includes an open portion not overlapping the light shielding member and a shadow portion around the open portion overlapping the light shielding member.
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公开(公告)号：US20200051966A1
公开(公告)日：2020-02-13
申请号：US16373502
申请日：2019-04-02
发明人： Seung Chan Lee , Gun Hee Kim , Sang Ho Park , Ju Won Yoon , Joo Hee Jeon , Hyun Joon Kim
摘要： A display device and a method for fabricating the same. The display device includes a substrate including a circuit layer and a first pad unit; an auxiliary substrate disposed below the substrate and comprising a driving circuit and a second pad unit; a light-emitting unit disposed on the circuit layer; and a connection electrode in contact with a side surface of the substrate and electrically connecting the first pad unit with the second pad unit. The method includes forming a circuit layer and a first pad unit on a first surface of a substrate; forming a driving circuit and a second pad unit on a fourth surface of an auxiliary substrate; and attaching a second surface of the substrate opposite the first surface to a third surface of the auxiliary substrate opposite the fourth surface.
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公开(公告)号：US09768309B2
公开(公告)日：2017-09-19
申请号：US15194841
申请日：2016-06-28
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L27/00 , H01L29/00 , H01L29/786 , H01L27/12 , H01L29/66 , H01L29/417 , H01L27/32
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
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公开(公告)号：US09368515B2
公开(公告)日：2016-06-14
申请号：US14070886
申请日：2013-11-04
发明人： Dong Jo Kim , Ji Seon Lee , Jong Chan Lee , Yoon Ho Khang , Sang Ho Park , Yong Su Lee , Jung Kyu Lee
IPC分类号： H01L27/12
CPC分类号： H01L27/1225 , H01L27/1214 , H01L27/127 , H01L27/1288
摘要： A thin film transistor array panel may include a channel layer including an oxide semiconductor and formed in a semiconductor layer, a source electrode formed in the semiconductor layer and connected to the channel layer at a first side, a drain electrode formed in the semiconductor layer and connected to the channel layer at an opposing second side, a pixel electrode formed in the semiconductor layer in a same portion of the semiconductor layer as the drain electrode, an insulating layer disposed on the channel layer, a gate line including a gate electrode disposed on the insulating layer, a passivation layer disposed on the source and drain electrodes, the pixel electrode, and the gate line, and a data line disposed on the passivation layer. A width of the channel layer may be substantially equal to a width of the pixel electrode in a direction parallel to the gate line.
摘要翻译： 薄膜晶体管阵列面板可以包括在半导体层中形成的氧化物半导体的沟道层，形成在半导体层中并连接到第一侧的沟道层的源电极，形成在半导体层中的漏电极和 连接到相对的第二侧的沟道层，形成在与漏电极的半导体层相同的部分中的半导体层中的像素电极，设置在沟道层上的绝缘层，设置在栅电极上的栅极线 绝缘层，设置在源电极和漏电极上的钝化层，像素电极和栅极线以及设置在钝化层上的数据线。 沟道层的宽度可以基本上等于像素电极在与栅极线平行的方向上的宽度。
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27.发明授权Thin film transistor having at least two carbon nanotube patterns formed in a channel and connected by at least one floating electrode and a display device including the same 有权薄膜晶体管具有至少两个形成在沟道中并由至少一个浮动电极连接的碳纳米管图案和包括该碳纳米管图案的显示装置公开(公告)号：US09153626B2
公开(公告)日：2015-10-06
申请号：US14460395
申请日：2014-08-15
发明人： Sang Ho Park , Young Ki Shin , Yoon Ho Khang , Joo Hyung Lee , Hyung Woo Lee , Seung Hun Hong
CPC分类号： H01L27/283 , B82Y10/00 , H01L27/3274 , H01L51/0048 , H01L51/0558
摘要： A thin film transistor includes a gate electrode configured to receive a control voltage, a source electrode insulated from the gate electrode, and configured to receive an input voltage, a drain electrode insulated from the gate electrode, and configured to receive an output voltage, at least two carbon nanotube patterns formed in a channel region between the source electrode and the drain electrode, wherein the carbon nanotube patterns are separated from each other, and at least one floating electrode connecting the two carbon nanotube patterns to each other.
摘要翻译： 薄膜晶体管包括被配置为接收控制电压的栅电极，与栅电极绝缘的源电极，并且被配置为接收输入电压，与栅电极绝缘的漏电极，并且被配置为接收输出电压， 在源电极和漏电极之间的沟道区域中形成的至少两个碳纳米管图案，其中碳纳米管图案彼此分离，以及至少一个将两个碳纳米管图案彼此连接的浮动电极。
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28.发明授权Thin film transistor, thin film transistor array panel including the same, and method of manufacturing the same 有权薄膜晶体管，包括其的薄膜晶体管阵列面板及其制造方法公开(公告)号：US09034691B2
公开(公告)日：2015-05-19
申请号：US14468472
申请日：2014-08-26
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang
IPC分类号： H01L21/02 , H01L29/66 , H01L27/12 , H01L29/786 , H01L21/385 , H01L21/441
CPC分类号： H01L29/7869 , H01L21/0262 , H01L21/385 , H01L21/441 , H01L27/1214 , H01L27/1225 , H01L27/1259 , H01L27/1288 , H01L29/41733 , H01L29/66969 , H01L29/786 , H01L29/78633 , H01L29/78696
摘要： A thin film transistor, a thin film transistor array panel including the same, and a method of manufacturing the same are provided, wherein the thin film transistor includes a channel region including an oxide semiconductor, a source region and a drain region connected to the channel region and facing each other at both sides with respect to the channel region, an insulating layer positioned on the channel region, and a gate electrode positioned on the insulating layer, wherein an edge boundary of the gate electrode and an edge boundary of the channel region are substantially aligned.
摘要翻译： 提供一种薄膜晶体管，包括该薄膜晶体管的薄膜晶体管阵列面板及其制造方法，其中薄膜晶体管包括沟道区，该沟道区包括氧化物半导体，源极区和连接到沟道的漏极区 区域，并且相对于沟道区域在两侧面对，位于沟道区域上的绝缘层和位于绝缘层上的栅电极，其中栅电极的边缘边界和沟道区域的边缘边界 基本对齐。
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29.发明申请THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权薄膜晶体管，包括其的薄膜晶体管阵列面板及其制造方法公开(公告)号：US20140167040A1
公开(公告)日：2014-06-19
申请号：US14184361
申请日：2014-02-19
发明人： Yong Su Lee , Yoon Ho Khang , Dong Jo Kim , Hyun Jae Na , Sang Ho Park , Se Hwan Yu , Chong Sup Chang , Dae Ho Kim , Jae Neung Kim , Myoung Geun Cha , Sang Gab Kim , Yu-Gwang Jeong
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/78633 , H01L27/1225 , H01L27/124 , H01L27/1288 , H01L27/3262 , H01L29/41733 , H01L29/66969 , H01L29/78618 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.
摘要翻译： 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。
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公开(公告)号：US20140151683A1
公开(公告)日：2014-06-05
申请号：US13873426
申请日：2013-04-30
发明人： Sang Ho Park , Su-Hyoung Kang , Yoon Ho Khang , Dong Jo Kim , Joon Yong Park , Sang Won Shin , Dong Hwan Shim
IPC分类号： H01L29/786
CPC分类号： H01L29/7869
摘要： A thin film transistor includes an oxide semiconductor, in which an oxygen defect content of the oxide semiconductor is no greater than about 0.15 based on an entire oxygen content included in the oxide semiconductor.
摘要翻译： 薄膜晶体管包括氧化物半导体，其中氧化物半导体的氧缺陷含量基于氧化物半导体中包含的全部氧含量不大于约0.15。
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