公开(公告)号：US10331033B2

公开(公告)日：2019-06-25

申请号：US14791912

申请日：2015-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Sangwon Kim ,  Seongjun Park

IPC: G03F7/11 ,  C08G83/00 ,  C08K3/30 ,  C08K3/38 ,  G03F7/40 ,  H01L21/47 ,  H01L21/4757 ,  G03F7/09

CPC classification number: G03F7/11 ,  C08G83/001 ,  C08K3/30 ,  C08K3/38 ,  C08K2003/3009 ,  C08K2003/385 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/47 ,  H01L21/47573

Abstract: A hardmask composition includes a first material including one of an aromatic ring-containing monomer and a polymer containing a repeating unit including an aromatic ring-containing monomer, a second material including at least one of a hexagonal boron nitride and a precursor thereof, a chalcogenide-based material and a precursor thereof, and a two-dimensional carbon nanostructure and a precursor thereof, the two-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen, and a solvent.

公开(公告)号：US20190123273A1

公开(公告)日：2019-04-25

申请号：US16144257

申请日：2018-09-27

Applicant: Samsung Electronics Co., Ltd. ,  SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION

Inventor： Minhyun Lee ,  Seongjun Park ,  Hyunjae Song ,  Hyeonjin Shin ,  Kibum Kim ,  Sanghun Lee ,  Yunho Kang

IPC: H01L45/00 ,  H01L21/768 ,  G11C13/00

Abstract: A nonvolatile memory apparatus includes a first electrode, a second electrode separated from the first electrode, a resistive-change material layer provided between the first electrode and the second electrode and configured to store information due to a resistance change caused by an electrical signal applied through the first electrode and the second electrode, and a diffusion prevention layer provided between the first electrode and the resistive-change material layer and/or between the second electrode and the resistive-change material layer and including a two-dimensional (2D) material having a monolayer thickness of about 0.35 nm or less.

公开(公告)号：US20190043946A1

公开(公告)日：2019-02-07

申请号：US16152576

申请日：2018-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun Lee ,  Haeryong Kim ,  Hyeonjin Shin ,  Seunggeol Nam ,  Seongjun Park

IPC: H01L29/08 ,  H01L29/04 ,  H01L29/45 ,  H01L29/417 ,  H01L29/267 ,  H01L21/285 ,  H01L29/78 ,  H01L29/06 ,  H01L29/16 ,  H01L29/165

Abstract: A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.

公开(公告)号：US10186545B2

公开(公告)日：2019-01-22

申请号：US15244073

申请日：2016-08-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Kiyoung Lee ,  Sangyeob Lee ,  Eunkyu Lee ,  Jinseong Heo ,  Seongjun Park

IPC: H01L27/146 ,  H01L31/032 ,  H01L31/0352 ,  H01L31/109

Abstract: An image sensor may include visible light detectors and a near-infrared light detector. The near-infrared light detector may contain a material highly sensitive to near-infrared rays, and thus the size of the near-infrared light detector may be reduced.

公开(公告)号：US10170325B2

公开(公告)日：2019-01-01

申请号：US15332287

申请日：2016-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon Kim ,  Hyeonjin Shin ,  Seongjun Park

IPC: H01L21/02 ,  H01L21/308 ,  H01L21/324 ,  H01L21/311 ,  H01L21/3213 ,  C09D1/00 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/40

Abstract: A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.

公开(公告)号：US20180350915A1

公开(公告)日：2018-12-06

申请号：US15807096

申请日：2017-11-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Hyeonjin Shin ,  Yeonchoo Cho ,  Seunggeol Nam ,  Seongjun Park ,  Yunseong Lee

IPC: H01L29/16 ,  C01B32/186 ,  H01L21/02 ,  H01L29/167 ,  H01L23/532 ,  H01L21/3065

CPC classification number: H01L29/1606 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L29/66015

Abstract: A semiconductor device includes a substrate and a graphene layer. The substrate includes an insulator and a semiconductor. The graphene layer is grown on a surface of the semiconductor. The semiconductor includes at least one of a group IV material and a group III-V compound. A method of manufacturing the semiconductor device is disclosed.

公开(公告)号：US10090479B2

公开(公告)日：2018-10-02

申请号：US14845518

申请日：2015-09-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Taeho Kim ,  Sangwon Kim ,  Seongjun Park ,  Sangmin Lee

IPC: A61B5/02 ,  H01L51/00 ,  H01L51/50 ,  H01L51/52 ,  A61B5/024 ,  A61B5/00 ,  H01L27/32

Abstract: Provided are a stretchable and/or foldable optoelectronic device, a method of manufacturing the same, and an apparatus including the stretchable and/or foldable optoelectronic device. A stretchable and/or foldable optoelectronic device may include an optoelectronic device portion on a substrate. The substrate may include an elastomeric polymer and may be stretchable. The optoelectronic device portion may be configured to have a wavy structure to be stretchable. The optoelectronic device portion may include a graphene layer and a quantum dot (QD)-containing layer. The stretchable and/or foldable optoelectronic device may further include a capping layer that includes an elastomeric polymer and is on the optoelectronic device portion. The stretchable and/or foldable optoelectronic device may further include a plastic material layer that contacts at least one surface of the optoelectronic device portion.

公开(公告)号：US09997604B2

公开(公告)日：2018-06-12

申请号：US15113079

申请日：2015-01-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho Lee ,  Changseok Lee ,  Seongjun Park

IPC: H01L29/417 ,  H01L29/78 ,  H01L23/532 ,  H01L21/768 ,  H01L29/16 ,  H01L23/522 ,  H01L23/485

CPC classification number: H01L29/41725 ,  H01L21/76831 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53276 ,  H01L29/1606 ,  H01L29/417 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided are an electrode connecting structure that includes an adhesion layer formed between a graphene layer and a metal layer and an electronic device having the electrode connecting structure. The electrode connecting structure may include an adhesion layer formed of a two-dimensional material provided between the graphene layer and the metal layer. The graphene layer may be a diffusion barrier, and the adhesion layer may stably maintain the interface characteristics of the graphene layer and the metal layer when the metal layer is formed on a surface of the graphene layer.

公开(公告)号：US09954155B2

公开(公告)日：2018-04-24

申请号：US15280241

申请日：2016-09-29

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Seongjun Park ,  Hyeonjin Shin ,  Sungwng Kim ,  Eunsung Kim ,  Jaeyeol Hwang

IPC: H01L35/16 ,  H01L21/02 ,  H01L35/34 ,  H01L35/10 ,  H01L35/18

CPC classification number: H01L35/16 ,  H01L21/02488 ,  H01L21/02502 ,  H01L35/10 ,  H01L35/18 ,  H01L35/34

Abstract: A thermoelectric structure that may be included in a thermoelectric device may include a thin-film structure that may include a plurality of thin-film layers. The thin-film structure may include Tellurium. The thin-film structure may be on a substrate. The substrate may include an oxide, and a buffer layer may be between the substrate and the thin-film structure. The thermoelectric structure may be manufactured via depositing material ablated from a target onto the substrate. Some material may react with the substrate to form the buffer layer, and thin film layers may be formed on the buffer layer. The thin film layers may be removed from the substrate and provided on a separate substrate. Removing the thin-film layers from the substrate may include removing the thin-film layers from the buffer layer.

公开(公告)号：US09882074B2

公开(公告)日：2018-01-30

申请号：US14940696

申请日：2015-11-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun Yang ,  Hyena Kwak ,  Hyoungsub Kim ,  Hoojeong Lee ,  Seongjun Park ,  Seongjun Jeong

IPC: H01L31/0336 ,  H01L31/112 ,  H01L31/032

CPC classification number: H01L31/0336 ,  H01L31/032 ,  H01L31/1129

Abstract: An optoelectronic device is disclosed. The disclosed optoelectronic device includes an oxide semiconductor layer and a semiconducting two-dimensional (2D) material layer forming a stack structure with the oxide semiconductor layer.