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    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    21.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140199796A1

    公开(公告)日：2014-07-17

    申请号：US14150713

    申请日：2014-01-08

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG

    IPC: H01L33/46 ,  H01L21/78 ,  H01L33/52

    CPC classification number: H01L21/78 ,  H01L24/18 ,  H01L33/52 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

    Abstract: A method of manufacturing a semiconductor light emitting device includes forming a plurality of semiconductor light emitting devices on a substrate, the semiconductor light emitting devices having at least one electrode pad formed on upper surfaces thereof; forming a conductive bump by forming a bump core on the electrode pad of each of the semiconductor light emitting devices and forming a reflective bump layer enclosing the bump core; forming a resin encapsulating part containing a phosphor on the plurality of semiconductor light emitting devices to encompass the conductive bump; polishing the resin encapsulating part to expose the bump core of the conductive bump to an upper surface of the resin encapsulating part; and forming individual semiconductor light emitting devices by cutting the resin encapsulating part between the semiconductor light emitting devices.

    Abstract translation: 一种制造半导体发光器件的方法包括在衬底上形成多个半导体发光器件，所述半导体发光器件具有形成在其上表面上的至少一个电极焊盘; 通过在每个半导体发光器件的电极焊盘上形成凸起芯，形成一个导电凸块，并形成一个包围凸块的反射凸块; 在所述多个半导体发光器件上形成含有荧光体的树脂封装部，以包围所述导电凸块; 抛光树脂封装部分以将导电凸块的凸起芯露出到树脂封装部分的上表面; 以及通过在半导体发光器件之间切割树脂封装部分来形成单独的半导体发光器件。

    SEMICONDUCTOR DEVICE
    22.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20220165752A1

    公开(公告)日：2022-05-26

    申请号：US17669830

    申请日：2022-02-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Bong Yong LEE ,  Tae Hun KIM ,  Min Kyung BAE

    IPC: H01L27/11582 ,  H01L27/11573 ,  H01L27/11556 ,  H01L29/06 ,  H01L23/10 ,  H01L27/11526

    Abstract: A semiconductor device including a substrate; a lower structure including a sealing layer on the substrate and a support layer on the sealing layer, the sealing layer and the support layer both including a semiconductor material; a mold structure on the lower structure and having an interlayer insulating film and a conductive film alternately stacked therein; a channel hole penetrating the mold structure; a channel structure extending along sidewalls of the channel hole; an isolation trench penetrating the mold structure and extending into the lower structure; and a poly liner extending along sidewalls of the isolation trench, the poly liner being connected to the lower structure and including the semiconductor material.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    23.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开

    公开(公告)号：US20190229242A1

    公开(公告)日：2019-07-25

    申请号：US16045951

    申请日：2018-07-26

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ju Heon YOON ,  Jung Hwan KIL ,  Tae Hun KIM ,  Hwa Ryong SONG ,  Jae In SIM

    IPC: H01L33/40 ,  H01L33/62 ,  H01L33/32 ,  H01L33/42 ,  H01L33/12 ,  H01L33/20

    Abstract: A semiconductor light emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, a first transparent electrode layer on the second conductivity-type semiconductor layer, a first insulating layer on the first transparent electrode layer, the first insulating layer including a plurality of through-holes, a reflective electrode layer on the first insulating layer and connected to the first transparent electrode layer through the plurality of through-holes, and a transparent protection layer covering upper and side surfaces of the reflective electrode layer, the transparent protection layer being on a portion of the first insulating layer.

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
    25.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20140117392A1

    公开(公告)日：2014-05-01

    申请号：US13948797

    申请日：2013-07-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tae Hun KIM ,  Sung Joon KIM ,  Yong Il KIM ,  Yung Ho RYU ,  Myeong Rak SON ,  Su Yeol LEE ,  Seung Hwan LEE ,  Tae Sung JANG ,  Su Min HWANGBO

    IPC: H01L33/60

    CPC classification number: H01L33/007 ,  H01L33/0079

    Abstract: A method for manufacturing a semiconductor light emitting device includes forming an isolation pattern on a semiconductor single crystal growth substrate. A first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer are sequentially grown in one chip unit region of the semiconductor single crystal growth substrate defined by the isolation pattern, and a reflective metal layer is formed to cover the light emitting structure and the isolation pattern. A support substrate is formed on the reflective metal layer, and the semiconductor single crystal growth substrate is removed from the light emitting structure. The support substrate is then cut into individual light emitting devices.

    Abstract translation: 一种制造半导体发光器件的方法包括在半导体单晶生长衬底上形成隔离图案。 在由隔离图案限定的半导体单晶生长基板的一个芯片单元区域中依次生长第一导电型半导体层，有源层和第二导电型半导体层，并且形成反射金属层以覆盖 发光结构和隔离图案。 在反射金属层上形成支撑基板，从发光结构去除半导体单晶生长基板。 然后将支撑衬底切割成单个发光器件。

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