公开(公告)号：US20050282305A1

公开(公告)日：2005-12-22

申请号：US11196251

申请日：2005-08-04

申请人： Satoshi Murakami ,  Masahiko Hayakawa ,  Shunpei Yamazaki

发明人： Satoshi Murakami ,  Masahiko Hayakawa ,  Shunpei Yamazaki

IPC分类号： G02F1/1362 ,  H01L21/336 ,  H01L27/32 ,  H01L21/00 ,  H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/1248 ,  G02F1/133512 ,  G02F1/1337 ,  G02F1/1339 ,  G02F1/1341 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2201/123 ,  H01L23/3171 ,  H01L23/49827 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3276 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/786 ,  H01L29/78606 ,  H01L29/78651 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  Y10S438/95 ,  H01L2924/00

摘要： Provided is a semiconductor element including: a semiconductor having an active layer; a gate insulating film which is in contact with the semiconductor; a gate electrode opposite to the active layer through the gate insulating film; a first nitride insulating film formed over the active layer; a photosensitive organic resin film formed on the first nitride insulating film; a second nitride insulating film formed on the photosensitive organic resin film; and a wiring provided on the second nitride insulating film, in which a first opening portion is provided in the photosensitive organic resin film, an inner wall surface of the first opening portion is covered with the second nitride insulating film, a second opening portion is provided in a laminate including the gate insulating film, the first nitride insulating film, and the second nitride insulating film inside the first opening portion, and the semiconductor is connected with the wiring through the first opening portion and the second opening portion.

摘要翻译： 提供一种半导体元件，包括：具有活性层的半导体; 与半导体接触的栅极绝缘膜; 通过所述栅极绝缘膜与所述有源层相对的栅电极; 形成在有源层上的第一氮化物绝缘膜; 形成在第一氮化物绝缘膜上的光敏有机树脂膜; 形成在感光性有机树脂膜上的第二氮化物绝缘膜; 以及设置在第二氮化物绝缘膜上的布线，其中在感光性有机树脂膜中设置有第一开口部，第一开口部的内壁面被第二氮化物绝缘膜覆盖，设置有第二开口部 在第一开口部内部具有栅极绝缘膜，第一氮化物绝缘膜和第二氮化物绝缘膜的层叠体中，半导体通过第一开口部和第二开口部与布线连接。

公开(公告)号：US08008666B2

公开(公告)日：2011-08-30

申请号：US12711611

申请日：2010-02-24

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制用于除去水分的加热处理的处理时间，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。

公开(公告)号：US07671369B2

公开(公告)日：2010-03-02

申请号：US10400427

申请日：2003-03-28

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Masahiko Hayakawa ,  Kiyoshi Kato ,  Mitsuaki Osame

IPC分类号： H01L29/04

CPC分类号： H01L27/1248 ,  G02F1/136227 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1244 ,  H01L27/1255 ,  H01L27/13 ,  H01L27/3246 ,  H01L27/3276 ,  H01L33/52 ,  H01L51/5237 ,  H01L51/5253

摘要： It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film. Then, in the opening part of the organic resin film, a gate insulating film and the two layer inorganic insulating film containing nitrogen are opened partially by etching to expose an active layer of the TFT.

摘要翻译： 本发明的目的是提供一种具有层间绝缘膜的半导体显示装置，其可以在控制成膜时间的同时获得表面的平面性，并且可以控制加热处理的处理时间，同时除去水分，并且可以防止水分 在层间绝缘膜中不被放电到与层间绝缘膜相邻的膜或电极。 形成与有机树脂相比不容易透过水分的含氮的无机绝缘膜，以覆盖TFT。 接着，在有机绝缘膜上涂布含有感光性丙烯酸树脂的有机树脂膜，将有机树脂膜部分地曝光以打开。 然后，形成与有机树脂相比不容易透过水分的含有氮的无机绝缘膜，以覆盖打开的有机树脂膜。 然后，在有机树脂膜的开口部分中，通过蚀刻部分地打开栅极绝缘膜和含氮的两层无机绝缘膜，以暴露TFT的有源层。

公开(公告)号：US08436518B2

公开(公告)日：2013-05-07

申请号：US12890893

申请日：2010-09-27

申请人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Koichiro Kamata ,  Hiroyuki Tomatsu ,  Hisao Ikeda ,  Junichiro Sakata

发明人： Shunpei Yamazaki ,  Masahiko Hayakawa ,  Koichiro Kamata ,  Hiroyuki Tomatsu ,  Hisao Ikeda ,  Junichiro Sakata

IPC分类号： H01I5/48

CPC分类号： G09G3/3258 ,  G09G3/007 ,  G09G3/2022 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2310/027 ,  G09G2320/029 ,  G09G2320/043 ,  G09G2330/08 ,  H01L51/5265 ,  H01L2251/562 ,  Y02B10/14

摘要： An object of the present invention is to provide a new light emitting element with little initial deterioration, and a display device in which initial deterioration is reduced and variation in deterioration over time is reduced by a new method for driving a display device having the light emitting element. One feature of the invention is that a display device comprising a light emitting element including a first electrode, a second electrode opposed to the first electrode, and a mixed layer of metal oxide and an organic compound provided between the first electrode and the second electrode is subjected to aging drive.

摘要翻译： 本发明的目的是提供一种初始劣化很少的新的发光元件，以及通过新的驱动具有发光的显示装置的新方法，降低初始劣化并随时间劣化的变化的显示装置 元件。 本发明的一个特征在于，包括发光元件的显示装置包括第一电极，与第一电极相对的第二电极以及设置在第一电极和第二电极之间的金属氧化物和有机化合物的混合层， 经历老化驱动。

公开(公告)号：US08421715B2

公开(公告)日：2013-04-16

申请号：US11131462

申请日：2005-05-18

申请人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Tomoyuki Iwabuchi ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki

发明人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Tomoyuki Iwabuchi ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki

IPC分类号： G09G3/30

CPC分类号： G09G3/3233 ,  G09G3/2022 ,  G09G3/3216 ,  G09G3/3241 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0465 ,  G09G2300/0861 ,  G09G2310/0251 ,  G09G2310/063 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/045 ,  G09G2320/048 ,  G09G2330/04

摘要： A light emitting element has a property that a resistance value (internal resistance value) thereof changes according to the ambient temperature. Specifically, assuming that the room temperature is a normal temperature, when the ambient temperature becomes higher than the normal temperature, a resistance value is decreased, and when the ambient temperature becomes lower than the normal temperature, a resistance value is increased. Therefore, when the ambient temperature changes or degradation is caused with time due to the aforementioned property of the light emitting element, luminance varies. The invention provides a display device where an effect of current fluctuation of a light emitting element, which is caused by the change in ambient temperature and degradation with time, is suppressed. The display device comprises a monitoring element, to which a current is supplied from a current source. A voltage applied to the monitoring element is applied to a light emitting element.

摘要翻译： 发光元件具有其电阻值（内部电阻值）根据环境温度而变化的性质。 具体地，假设室温为常温，当环境温度变得高于常温时，电阻值降低，并且当环境温度变得低于常温时，电阻值增加。 因此，由于上述发光元件的特性，当环境温度随时间变化或劣化时，亮度变化。 本发明提供了一种显示装置，其中抑制了由环境温度的变化和随着时间的劣化而引起的发光元件的电流波动的影响。 显示装置包括监视元件，从电流源提供电流。 施加到监视元件的电压被施加到发光元件。

公开(公告)号：US07855416B2

公开(公告)日：2010-12-21

申请号：US12276746

申请日：2008-11-24

申请人： Hidehito Kitakado ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Taketomi Asami

发明人： Hidehito Kitakado ,  Masahiko Hayakawa ,  Shunpei Yamazaki ,  Taketomi Asami

IPC分类号： H01L21/84

CPC分类号： H01L29/78603 ,  H01L27/12 ,  H01L27/1248 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627

摘要： Channel doping is an effective method for controlling Vth, but if Vth shifts to the order of −4 to −3 V when forming circuits such as a CMOS circuit formed from both an n-channel TFT and a P-channel TFT on the same substrate, then it is difficult to control the Vth of both TFTs with one channel dope. In order to solve the above problem, the present invention forms a blocking layer on the back channel side, which is a laminate of a silicon oxynitride film (A) manufactured from SiH4, NH3, and N2O, and a silicon oxynitride film (B) manufactured from SiH4 and N2O. By making this silicon oxynitride film laminate structure, contamination by alkaline metallic elements from the substrate can be prevented, and influence by stresses, caused by internal stress, imparted to the TFT can be relieved.

摘要翻译： 通道掺杂是用于控制Vth的有效方法，但是当形成诸如在同一衬底上的n沟道TFT和P沟道TFT两者形成的CMOS电路的电路时，Vth偏移到-4至-3V的量级 ，则难以用一个通道掺杂来控制两个TFT的Vth。 为了解决上述问题，本发明在由SiH 4，NH 3和N 2 O制造的氮氧化硅膜（A）和氮氧化硅膜（B）之间的背面通道侧形成阻挡层， 由SiH4和N2O制成。 通过制造这种氮氧化硅膜层压结构，可以防止碱性金属元素从衬底的污染，并且可以减轻施加于TFT的由内部应力引起的应力的影响。

公开(公告)号：US07582162B2

公开(公告)日：2009-09-01

申请号：US11600833

申请日：2006-11-17

申请人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

发明人： Atsuo Isobe ,  Shunpei Yamazaki ,  Koji Dairiki ,  Hiroshi Shibata ,  Chiho Kokubo ,  Tatsuya Arao ,  Masahiko Hayakawa ,  Hidekazu Miyairi ,  Akihisa Shimomura ,  Koichiro Tanaka ,  Mai Akiba

IPC分类号： C30B11/00 ,  C30B15/26 ,  H01L21/335

CPC分类号： H01L27/1222 ,  B23K26/0738 ,  H01L21/02354 ,  H01L21/02356 ,  H01L21/02675 ,  H01L21/02683 ,  H01L21/02686 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/32139 ,  H01L21/84 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1274 ,  H01L27/1281 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675 ,  H01L29/78696 ,  Y10S118/90 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008

摘要： A semiconductor device production system using a laser crystallization method is provided which can avoid forming grain boundaries in a channel formation region of a TFT, thereby preventing grain boundaries from lowering the mobility of the TFT greatly, from lowering ON current, and from increasing OFF current. Rectangular or stripe pattern depression and projection portions are formed on an insulating film. A semiconductor film is formed on the insulating film. The semiconductor film is irradiated with continuous wave laser light by running the laser light along the stripe pattern depression and projection portions of the insulating film or along the major or minor axis direction of the rectangle. Although continuous wave laser light is most preferred among laser light, it is also possible to use pulse oscillation laser light in irradiating the semiconductor film.

摘要翻译： 提供了一种使用激光晶化方法的半导体器件制造系统，其可以避免在TFT的沟道形成区域中形成晶界，从而防止晶界大大降低TFT的迁移率，降低导通电流，并且提高截止电流 。 在绝缘膜上形成矩形或条纹图案凹陷和突出部分。 在绝缘膜上形成半导体膜。 通过沿着条形图案凹陷和绝缘膜的突出部分沿着矩形的长轴或短轴方向运行激光来对连续波激光照射半导体膜。 尽管在激光中最优选连续波激光，但也可以在照射半导体膜时使用脉冲振荡激光。

公开(公告)号：US20090174333A1

公开(公告)日：2009-07-09

申请号：US12348574

申请日：2009-01-05

申请人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

发明人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

IPC分类号： H05B37/02

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  G09G2330/12 ,  H01L27/3244 ,  H01L2251/5323

摘要： A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1:L2/W2=1:2 to 1:10.

摘要翻译： 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件，与发光元件串联连接的驱动晶体管，监视发光元件，与监视发光元件串联连接的限幅晶体管，用于供给 到监视发光元件的恒定电流，以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端，并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1：L2 / W2 = 1:2至1:10。

公开(公告)号：US07482629B2

公开(公告)日：2009-01-27

申请号：US11123209

申请日：2005-05-06

申请人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

发明人： Masahiko Hayakawa ,  Yu Yamazaki ,  Yukari Ando ,  Keisuke Miyagawa ,  Jun Koyama ,  Mitsuaki Osame ,  Aya Anzai ,  Shunpei Yamazaki ,  Satoshi Seo ,  Hiroko Abe

IPC分类号： H01L29/04

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/08 ,  G09G2300/0842 ,  G09G2310/0256 ,  G09G2310/0275 ,  G09G2310/061 ,  G09G2320/029 ,  G09G2320/041 ,  G09G2320/043 ,  G09G2330/02 ,  G09G2330/12 ,  H01L27/3244 ,  H01L2251/5323

摘要： A display device where the influence of variations in current of the light emitting element due to changes in ambient temperature and changes with time can be suppressed. The display device of the invention has a light emitting element, a driving transistor connected in series to the light emitting element, a monitoring light emitting element, a limiter transistor connected in series to the monitoring light emitting element, a constant current source for supplying a constant current to the monitoring light emitting element, and a circuit for outputting a potential equal to an inputted potential. A first electrode of the light emitting element is connected to an output terminal of the circuit through the driving transistor, and a first electrode of the monitoring light emitting element is connected to an input terminal of the circuit through the limiter transistor. The channel length L1 and the channel width W1 of the driving transistor, and the channel length L2 and the channel width W2 of the limiter transistor satisfy L1/W1: L2/W2=1:2 to 1:10.

摘要翻译： 可以抑制由于环境温度的变化而随着时间的变化而影响发光元件的电流的变化的显示装置。 本发明的显示装置具有发光元件，与发光元件串联连接的驱动晶体管，监视发光元件，与监视发光元件串联连接的限幅晶体管，用于供给 到监视发光元件的恒定电流，以及用于输出等于输入电位的电位的电路。 发光元件的第一电极通过驱动晶体管连接到电路的输出端，并且监控发光元件的第一电极通过限幅晶体管连接到电路的输入端。 驱动晶体管的沟道长度L1和沟道宽度W1以及限制晶体管的沟道长度L2和沟道宽度W2满足L1 / W1：L2 / W2 = 1:2至1:10。

公开(公告)号：US07427780B2

公开(公告)日：2008-09-23

申请号：US10712062

申请日：2003-11-14

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L27/14

CPC分类号： H01L21/02672 ,  H01L21/02686 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/1203 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： There is disclosed a method of fabricating a thin-film transistor having excellent characteristics. Nickel element is held in contact with selected regions of an amorphous silicon film. Then, thermal processing is performed to crystallize the amorphous film. Subsequently, thermal processing is carried out in an oxidizing ambient containing a halogen element to form a thermal oxide film. At this time, the crystallinity is improved. Also, gettering of the nickel element proceeds. This crystalline silicon film consists of crystals grown radially from a number of points. Consequently, the thin-film transistor having excellent characteristics can be obtained.

摘要翻译： 公开了一种制造具有优异特性的薄膜晶体管的方法。 镍元素与非晶硅膜的选定区域保持接触。 然后，进行热处理以使非晶膜结晶。 随后，在包含卤素元素的氧化环境中进行热处理以形成热氧化膜。 此时，结晶度提高。 此外，镍元素的吸收进行。 该晶体硅膜由从多个点径向生长的晶体组成。 因此，可以获得具有优异特性的薄膜晶体管。