公开(公告)号：US20150179810A1

公开(公告)日：2015-06-25

申请号：US14575052

申请日：2014-12-18

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. The semiconductor device includes an oxide semiconductor film over an insulating surface, an antioxidant film over the insulating surface and the oxide semiconductor film, a pair of electrodes in contact with the antioxidant film, a gate insulating film over the pair of electrodes, and a gate electrode which is over the gate insulating film and overlaps with the oxide semiconductor film. In the antioxidant film, a width of a region overlapping with the pair of electrodes is longer than a width of a region not overlapping with the pair of electrodes.

Abstract translation: 抑制了电特性的变化，并且提高了使用包括氧化物半导体的晶体管的半导体器件的可靠性。 半导体器件包括绝缘表面上的氧化物半导体膜，绝缘表面上的抗氧化膜和氧化物半导体膜，与抗氧化膜接触的一对电极，一对电极上的栅极绝缘膜，以及栅极 电极，其在栅极绝缘膜上方并与氧化物半导体膜重叠。 在抗氧化剂膜中，与该对电极重叠的区域的宽度比不与该对电极重叠的区域的宽度长。

公开(公告)号：US11804407B2

公开(公告)日：2023-10-31

申请号：US17518614

申请日：2021-11-04

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

CPC classification number: H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L29/7869 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US11296322B2

公开(公告)日：2022-04-05

申请号：US16862651

申请日：2020-04-30

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Teppei Oguni ,  Takeshi Osada ,  Toshihiko Takeuchi ,  Kuniharu Nomoto

IPC: H01M4/587 ,  B82Y40/00 ,  H01M4/133 ,  C25D5/50 ,  C25D5/48 ,  C25D13/12 ,  H01M4/04 ,  C25D13/02 ,  B82Y30/00 ,  H01M4/70 ,  H01M4/66 ,  H01M4/1393

Abstract: Graphene is formed with a practically uniform thickness on an uneven object. The object is immersed in a graphene oxide solution, and then taken out of the solution and dried; alternatively, the object and an electrode are immersed therein and voltage is applied between the electrode and the object used as an anode. Graphene oxide is negatively charged, and thus is drawn to and deposited on a surface of the object, with a practically uniform thickness. After that, the object is heated in vacuum or a reducing atmosphere, so that the graphene oxide is reduced to be graphene. In this manner, a graphene layer with a practically uniform thickness can be formed even on a surface of the uneven object.

公开(公告)号：US11211500B2

公开(公告)日：2021-12-28

申请号：US16760052

申请日：2018-11-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hiromi Sawai ,  Ryo Tokumaru ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Sho Nagamatsu ,  Tomoaki Moriwaka

IPC: H01L29/786 ,  H01L27/105 ,  H01L27/12 ,  H01L29/24 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.

公开(公告)号：US10964787B2

公开(公告)日：2021-03-30

申请号：US16732686

申请日：2020-01-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsutomu Murakawa ,  Toshihiko Takeuchi ,  Hiroki Komagata ,  Hiromi Sawai ,  Yasumasa Yamane ,  Shota Sambonsuge ,  Kazuya Sugimoto ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/105 ,  H01L29/51 ,  H01L29/66 ,  H01L27/12 ,  H01L29/49 ,  H01L29/24 ,  H01L29/788

Abstract: A semiconductor device includes a first conductor; a first insulator thereover; a first oxide thereover; a second oxide thereover; a second conductor and a third conductor that are separate from each other thereover; a third oxide over the first insulator, the second oxide, the second conductor, and the third conductor; a second insulator thereover; a fourth conductor thereover; and a third insulator over the first insulator, the second insulator, and the fourth conductor. The second oxide includes a region where the energy of the conduction band minimum of an energy band is low and a region where the energy of the conduction band minimum of the energy band is high. The energy of the conduction band minimum of the third oxide is higher than that of the region of the second oxide where the energy of the conduction band minimum is low. Side surfaces of the first oxide and the second oxide are covered with the third oxide.

公开(公告)号：US08941113B2

公开(公告)日：2015-01-27

申请号：US13803022

申请日：2013-03-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Takeuchi ,  Kosei Noda

IPC: H01L29/10 ,  H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L27/148

CPC classification number: H01L29/04 ,  H01L29/4908 ,  H01L29/78618

Abstract: To provide a semiconductor element in which generation of oxygen vacancies in an oxide semiconductor thin film can be suppressed. The semiconductor element has a structure in which, in a gate insulating film, the nitrogen content of regions which do not overlap with a gate electrode is higher than the nitrogen content of a region which overlaps with the gate electrode. A nitride film has an excellent property of preventing impurity diffusion; thus, with the structure, release of oxygen in the oxide semiconductor film, in particular, in the channel formation region, to the outside of the semiconductor element can be effectively suppressed.

Abstract translation: 提供能够抑制氧化物半导体薄膜中的氧空位的产生的半导体元件。 半导体元件具有这样的结构，其中在栅极绝缘膜中，与栅电极不重叠的区域的氮含量高于与栅电极重叠的区域的氮含量。 氮化物膜具有防止杂质扩散的优异性能; 因此，通过该结构，可以有效地抑制氧化物半导体膜中的氧，特别是沟道形成区域中的氧向半导体元件的外部的释放。

公开(公告)号：US12154827B2

公开(公告)日：2024-11-26

申请号：US18383086

申请日：2023-10-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US11967649B2

公开(公告)日：2024-04-23

申请号：US17895126

申请日：2022-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Toshihiko Takeuchi ,  Naoto Yamade ,  Yutaka Okazaki ,  Sachiaki Tezuka ,  Shunpei Yamazaki

IPC: H01L29/78 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786 ,  H01L29/792 ,  H10B12/00

CPC classification number: H01L29/78693 ,  H01L21/8234 ,  H01L27/0629 ,  H01L27/088 ,  H01L27/1255 ,  H01L29/792 ,  H10B12/00

Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.

公开(公告)号：US09929407B2

公开(公告)日：2018-03-27

申请号：US13721093

申请日：2012-12-20

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuki Tanemura ,  Toshihiko Takeuchi ,  Taiga Muraoka

IPC: H01M4/70 ,  H01M4/134 ,  H01M4/1395 ,  B82Y40/00 ,  H01M4/36 ,  H01M4/38 ,  H01M4/66

CPC classification number: H01M4/70 ,  B82Y40/00 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/386 ,  H01M4/661

Abstract: A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene.

公开(公告)号：US09722056B2

公开(公告)日：2017-08-01

申请号：US15276993

申请日：2016-09-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Akihisa Shimomura ,  Yasumasa Yamane ,  Yuhei Sato ,  Tetsuhiro Tanaka ,  Masashi Tsubuku ,  Toshihiko Takeuchi ,  Ryo Tokumaru ,  Mitsuhiro Ichijo ,  Satoshi Toriumi ,  Takashi Ohtsuki ,  Toshiya Endo

IPC: H01L21/00 ,  H01L29/66 ,  H01L29/786 ,  H01L21/02

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/78606 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.