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公开(公告)号：US09437780B2
公开(公告)日：2016-09-06
申请号：US12562917
申请日：2009-09-18
申请人： Tsun-Kai Ko , Schang-Jing Hon , Chien-Kai Chung , Hui-Chen Yeh , An-Ju Lin , Chien-Fu Shen , Chen Ou
发明人： Tsun-Kai Ko , Schang-Jing Hon , Chien-Kai Chung , Hui-Chen Yeh , An-Ju Lin , Chien-Fu Shen , Chen Ou
摘要： An optoelectronic semiconductor device in accordance with an embodiment of present invention includes a conversion unit having a first side; an electrical connector; a contact layer having an outer perimeter; and at least three successive discontinuous-regions formed along the outer perimeter and having at least one different factor; wherein the electrical connector, the contact layer, and the discontinuous-regions are formed on the first side of the conversion unit.
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公开(公告)号：US07928424B2
公开(公告)日：2011-04-19
申请号：US12270828
申请日：2008-11-13
申请人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
发明人： Chen Ou , Wen-Hsiang Lin , Shih-Kuo Lai
IPC分类号： H01L33/00
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.
摘要翻译： 氮化物系发光器件包括基板和在该基板上形成的多个层，其顺序如下：由氮形成的基于氮化物的缓冲层，第一III族元素和任选的第二III族元素， 第一氮化物基半导体层，发光层和第二氮化物基半导体层。
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公开(公告)号：US20080157115A1
公开(公告)日：2008-07-03
申请号：US12073284
申请日：2008-03-04
IPC分类号： H01L33/00
CPC分类号： H01L33/145 , H01L33/10 , H01L33/22
摘要： This invention provides a high-efficiency light-emitting device and the manufacturing method thereof. The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.
摘要翻译： 本发明提供一种高效率的发光装置及其制造方法。 高效率的发光装置包括：基板; 反射层; 接合层; 第一半导体层; 活性层 以及形成在所述有源层上的第二半导体层。 第二半导体层包括具有第一下部区域和第一较高区域的第一表面。
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公开(公告)号：US07132695B2
公开(公告)日：2006-11-07
申请号：US10605513
申请日：2003-10-05
申请人： Chen Ou , Jia-Rong Chang , Chen-Ke Hsu , Chang-Huei Jing
发明人： Chen Ou , Jia-Rong Chang , Chen-Ke Hsu , Chang-Huei Jing
IPC分类号： H10L31/0304
CPC分类号： H01L33/325 , H01L33/025 , H01L33/32 , H01S5/0421
摘要： A light emitting diode with a dual dopant contact layer. The light emitting diode includes a substrate, a light emitting stacked structure formed on the substrate, a dual dopant contact layer formed on the light emitting stacked structure, and a transparent conductive oxide layer formed on the dual dopant contact layer. The dual dopant contact layer has a plurality of p-type dopants and a plurality of n-type dopants after being fabricated.
摘要翻译： 具有双掺杂剂接触层的发光二极管。 发光二极管包括基板，形成在基板上的发光层叠结构，形成在发光层叠结构上的双掺杂剂接触层和形成在双掺杂剂接触层上的透明导电氧化物层。 双掺杂剂接触层在制造之后具有多个p型掺杂剂和多种n型掺杂剂。
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公开(公告)号：US20050285136A1
公开(公告)日：2005-12-29
申请号：US11160354
申请日：2005-06-21
申请人： Chen Ou , Ting-Yang Lin , Shih-Kuo Lai
发明人： Chen Ou , Ting-Yang Lin , Shih-Kuo Lai
CPC分类号： H01L33/22
摘要： A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.
摘要翻译： 发光装置包括基板，形成在基板上的第一氮化物半导体堆叠，形成在第一氮化物半导体堆叠上的氮化物发光层，形成在氮化物发光层上的第二氮化物半导体堆叠，以及第一 透明导电氧化物层形成在第二氮化物半导体堆叠上。 第二氮化物半导体堆叠包括形成在第二氮化物半导体堆叠的上表面中的多个六边形棱锥空腔。 第二氮化物半导体叠层的多个六角形金字塔腔被第一透明导电氧化物层填充，并且在多个六角锥形空腔的内表面处产生低电阻欧姆接触，以减少操作 电压并提高发光装置的发光效率。
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公开(公告)号：US08994052B2
公开(公告)日：2015-03-31
申请号：US13161835
申请日：2011-06-16
申请人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人： Chien-Fu Shen , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
摘要： A light-emitting device includes a first semiconductor layer; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer comprises a first region right under the first pad and a plurality of voids formed in the first region, wherein the region outside the first region in the second semiconductor layer is devoid of voids, and an area of the first region is smaller than that of the first pad in top view and the area of the first pad is smaller than that of the second semiconductor layer in top view, and the light emitted from the active layer is extracted from a top surface of the second semiconductor layer opposite the first semiconductor layer.
摘要翻译： 发光器件包括第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层包括位于所述第一焊盘下方的第一区域和形成在所述第一区域中的多个空隙，其中所述第二半导体层中的所述第一区域外部的区域为空 并且第一区域的面积比顶视图中的第一区域的面积小，并且第一衬垫的面积在俯视图中小于第二半导体层的面积，并且从有源层发射的光为 从与第一半导体层相对的第二半导体层的顶表面提取。
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公开(公告)号：US20120138991A1
公开(公告)日：2012-06-07
申请号：US13310255
申请日：2011-12-02
IPC分类号： H01L33/60
CPC分类号： H01L33/145 , H01L33/10 , H01L33/22
摘要： This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a substrate; a reflective layer; a bonding layer; a first semiconductor layer; an active layer; and a second semiconductor layer formed on the active layer. The second semiconductor layer includes a first surface having a first lower region and a first higher region.
摘要翻译： 本发明提供一种高效率的发光装置及其制造方法。高效率发光装置包括：基板; 反射层; 接合层; 第一半导体层; 活性层 以及形成在所述有源层上的第二半导体层。 第二半导体层包括具有第一下部区域和第一较高区域的第一表面。
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公开(公告)号：US20110017407A1
公开(公告)日：2011-01-27
申请号：US12842112
申请日：2010-07-23
申请人： Chen-Ke Hsu , Liang-Sheng Chi , Chun-Chang Chen , Win-Jim Su , Hsu-Cheng Lin , Mei-Ling Tsai , Yi Lung Liu , Chen Ou
发明人： Chen-Ke Hsu , Liang-Sheng Chi , Chun-Chang Chen , Win-Jim Su , Hsu-Cheng Lin , Mei-Ling Tsai , Yi Lung Liu , Chen Ou
IPC分类号： B32B38/10
CPC分类号： H01L22/20 , H01L21/67005 , H01L21/67132 , H01L21/67271 , Y10S156/93 , Y10S156/941 , Y10T156/1111 , Y10T156/1116 , Y10T156/1158 , Y10T156/1168 , Y10T156/1179 , Y10T156/1195 , Y10T156/1917 , Y10T156/1933 , Y10T156/1983
摘要： A chip sorting apparatus comprising a chip holder comprising a first surface and an second surface opposite to the first surface; a wafer comprising a first chip disposed on a first position of the first surface; a first chip receiver comprising a third surface and an fourth surface opposite to the third surface, wherein the third surface is opposite to the first surface; a pressurization device making the first chip and the third surface of the first chip receiver adhered to each other through pressuring the second surface at where corresponding to the first position; and a separator decreasing the adhesion between the first chip and the first surface.
摘要翻译： 一种芯片分选装置，包括：芯片保持器，其包括第一表面和与所述第一表面相对的第二表面; 晶片，其包括设置在所述第一表面的第一位置上的第一芯片; 第一芯片接收器，包括与第三表面相对的第三表面和第四表面，其中第三表面与第一表面相对; 使第一芯片的第一芯片和第三表面的加压装置通过在对应于第一位置的位置处对第二表面施加压力而彼此粘合; 以及减小第一芯片和第一表面之间的粘附性的隔板。
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公开(公告)号：US20100006884A1
公开(公告)日：2010-01-14
申请号：US12585420
申请日：2009-09-15
申请人： Chen Ou , Chen-Ke Hsu , Chia-Ming Chuang
发明人： Chen Ou , Chen-Ke Hsu , Chia-Ming Chuang
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/0095 , H01L33/22 , H01L2924/0002 , H01L2924/00
摘要： The application relates to a structure of a light emitting device and the manufacturing method thereof. The application discloses a method of forming a bonding pad of the light emitting device by chemical deposition method. The light emitting device includes a substrate, a semiconductor stack deposited on the substrate wherein the semiconductor stack includes at least a p-type semiconductor layer, an n-type semiconductor layer, and an active layer disposed between the p-type semiconductor layer and the n-type semiconductor layer. A bonding pad is formed on at least one of the p-type semiconductor layer and the n-type semiconductor layer wherein the bonding pad includes a seed layer formed by physical deposition method, and a chemically-deposited layer formed by chemical deposition method. The thickness of the seed layer is smaller than that of the chemically-deposited layer.
摘要翻译： 本发明涉及一种发光器件的结构及其制造方法。 本申请公开了一种通过化学沉积法形成发光器件的焊盘的方法。 发光器件包括衬底，沉积在衬底上的半导体堆叠，其中半导体堆叠至少包括p型半导体层，n型半导体层和设置在p型半导体层和p型半导体层之间的有源层 n型半导体层。 在p型半导体层和n型半导体层中的至少一个上形成接合焊盘，其中焊盘包括通过物理沉积方法形成的晶种层，以及通过化学沉积方法形成的化学沉积层。 种子层的厚度小于化学沉积层的厚度。
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公开(公告)号：US07385226B2
公开(公告)日：2008-06-10
申请号：US11160354
申请日：2005-06-21
申请人： Chen Ou , Ting-Yang Lin , Shih-Kuo Lai
发明人： Chen Ou , Ting-Yang Lin , Shih-Kuo Lai
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： A light-emitting device includes a substrate, a first nitride semiconductor stack formed on the substrate, a nitride light-emitting layer formed on the first nitride semiconductor stack, a second nitride semiconductor stack formed on the nitride light-emitting layer, and a first transparent conductive oxide layer formed on the second nitride semiconductor stack. The second nitride semiconductor stack includes a plurality of hexagonal-pyramid cavities formed in an upper surface of the second nitride semiconductor stack. The plurality of hexagonal-pyramid cavities of the second nitride semiconductor stack are filled with the first transparent conductive oxide layer, and a low-resistance ohmic contact is generated at the inner surfaces of the plurality of hexagonal-pyramid cavities so as to decrease the operation voltage and improve light-emitting efficiency of the light-emitting device.
摘要翻译： 发光装置包括基板，形成在基板上的第一氮化物半导体堆叠，形成在第一氮化物半导体堆叠上的氮化物发光层，形成在氮化物发光层上的第二氮化物半导体堆叠，以及第一 透明导电氧化物层形成在第二氮化物半导体堆叠上。 第二氮化物半导体堆叠包括形成在第二氮化物半导体堆叠的上表面中的多个六边形棱锥空腔。 第二氮化物半导体叠层的多个六角形金字塔腔被第一透明导电氧化物层填充，并且在多个六角锥形空腔的内表面处产生低电阻欧姆接触，以减少操作 电压并提高发光装置的发光效率。
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