公开(公告)号：US07691692B2

公开(公告)日：2010-04-06

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US07491659B2

公开(公告)日：2009-02-17

申请号：US10737855

申请日：2003-12-18

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Takeshi Fukada

IPC分类号： H01L21/31

CPC分类号： H01L21/02126 ,  C03C17/245 ,  C03C2218/1525 ,  C03C2218/153 ,  C23C16/402 ,  H01L21/02131 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/31612

摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。

公开(公告)号：US20090029509A1

公开(公告)日：2009-01-29

申请号：US12232433

申请日：2008-09-17

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/336

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

公开(公告)号：US07452829B2

公开(公告)日：2008-11-18

申请号：US11427377

申请日：2006-06-29

申请人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

发明人： Shunpei Yamazaki ,  Masaaki Hiroki ,  Mitsunori Sakama

IPC分类号： H01L21/469 ,  H01L27/01

CPC分类号： H01L21/02164 ,  C23C16/401 ,  C23C16/402 ,  C23C16/505 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31612 ,  H01L29/66757 ,  H01L29/78621

摘要： In a process of forming a silicon oxide film 116 that constitutes an interlayer insulating film with TEOS as a raw material through the plasma CVD method, the RF output is oscillated at 50 W, and the RF output is gradually increased from 50 W to 250 W (an output value at the time of forming a film) after discharging (after the generation of O2-plasma). A TEOS gas is supplied to start the film formation simultaneously when the RF output becomes 250 W, or while the timing is shifted. As a result, because the RF power supply is oscillated at a low output when starting discharging, a voltage between the RF electrodes can be prevented from changing transitionally and largely.

摘要翻译： 在通过等离子体CVD法形成以TEOS为原料的层间绝缘膜形成氧化硅膜116的过程中，RF输出以50W振荡，RF输出从50W逐渐升高到250W （在形成膜之后的输出值）（放电后（在产生O 2·2 - 等离子体）之后）。 当RF输出变为250W时，或当定时偏移时，提供TEOS气体同时开始成膜。 结果，由于在开始放电时RF电源以低输出振荡，因此可以防止RF电极之间的电压在很大程度上发生变化。

公开(公告)号：US07271082B2

公开(公告)日：2007-09-18

申请号：US10164019

申请日：2002-06-07

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/20

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。

公开(公告)号：US6025630A

公开(公告)日：2000-02-15

申请号：US190828

申请日：1998-11-12

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Yukiko Uehara ,  Hiroshi Uehara

IPC分类号： H01L21/316 ,  H01L27/01 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062

CPC分类号： H01L21/02131 ,  H01L21/02126 ,  H01L21/02205 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31629

摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.

摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷等离子体CVD，形成氧化硅膜以覆盖岛状非单晶硅区域，而氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。

公开(公告)号：US5840600A

公开(公告)日：1998-11-24

申请号：US521534

申请日：1995-08-30

申请人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Yasuhiko Takemura

发明人： Shunpei Yamazaki ,  Mitsunori Sakama ,  Yasuhiko Takemura

IPC分类号： H01L21/20 ,  H01L21/28 ,  H01L21/3105 ,  H01L21/314 ,  H01L21/316 ,  H01L21/336 ,  H01L21/02 ,  H01L21/302 ,  H01L21/324 ,  H01L21/329

CPC分类号： H01L29/66757 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02266 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3105 ,  H01L21/31612 ,  H01L21/31662

摘要： In forming an insulating film for a thin film transistor (TFT), a thermal oxidation film is formed by oxidation of silicon film at 500.degree. to 700.degree. C. or an insulating film composed mainly of silicon oxide deposited by physical vapor deposition (PVD) or chemical vapor deposition (CVD) is formed so as to cover island-like crystalline silicon, and then the resulting film is annealed at 400.degree. to 700.degree. C., preferably 450.degree. to 650.degree. C. in a highly reactive atmosphere of nitrogen oxide which is photoexcited or photodecomposed by ultraviolet rays. The thus modified silicon oxide film is used as the gate insulating film.

摘要翻译： 在形成用于薄膜晶体管（TFT）的绝缘膜时，通过在500℃至700℃下氧化硅膜或通过物理气相沉积（PVD）沉积的主要由氧化硅构成的绝缘膜形成热氧化膜， 或化学气相沉积（CVD）以覆盖岛状结晶硅，然后将所得膜在高反应性氮气氛中在400〜700℃，优选450〜650℃退火 紫外线照射或光分解的氧化物。 将这样改性的氧化硅膜用作栅极绝缘膜。

公开(公告)号：US5096851A

公开(公告)日：1992-03-17

申请号：US572331

申请日：1990-08-24

申请人： Shunpei Yamazaki ,  Noriya Ishida ,  Mitsunori Sakama ,  Mari Sasaki

发明人： Shunpei Yamazaki ,  Noriya Ishida ,  Mitsunori Sakama ,  Mari Sasaki

IPC分类号： H01L21/56 ,  H01L23/31

CPC分类号： H01L23/3135 ,  H01L21/56 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/8592 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01082 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041

摘要： An improved electric device and manufacturing method for the same are described. The device is for example an IC chip clothed in moulding. In advance of the moulding process, the IC chip is coated with silicon nitride in order to protect the IC chip from moisture invaded through cracks or gaps. The coating of silicon nitride is carried out by plasma CVD. Particularly, an AC voltage is applied to the IC chip during deposition for the purpose of obtaining an excellent property of the silicon nitride coating.

公开(公告)号：US4959533A

公开(公告)日：1990-09-25

申请号：US259522

申请日：1988-10-18

申请人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

发明人： Shunpei Yamazaki ,  Takeshi Fukada ,  Mitsunori Sakama ,  Hisato Shinohara ,  Nobumitsu Amachi ,  Naoya Sakamoto ,  Takashi Inuzima

IPC分类号： H01L27/146 ,  H04N1/031

CPC分类号： H04N1/0316 ,  H01L27/14623 ,  H01L27/14665 ,  H04N1/0313

摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.

公开(公告)号：US08304350B2

公开(公告)日：2012-11-06

申请号：US12705004

申请日：2010-02-12

申请人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

发明人： Shunpei Yamazaki ,  Hisashi Ohtani ,  Hiroyuki Shimada ,  Mitsunori Sakama ,  Hisashi Abe ,  Satoshi Teramoto

IPC分类号： H01L21/461

CPC分类号： H01L21/02686 ,  C23C16/303 ,  C23C16/345 ,  C23C16/402 ,  C23C16/54 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/67155 ,  H01L21/67207 ,  H01L27/1281 ,  H01L29/41733 ,  Y10S438/905 ,  Y10S438/908

摘要： A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

摘要翻译： 基板处理装置包括经由可抽出的公共室彼此连接的多个可抽出的处理室，公共室设有用于在每个处理室之间输送基板的装置。 更具体地，基板处理装置包括多个可排除的处理室，至少一个所述处理室通过其中的气相反应具有成膜功能，所述处理室中的至少一个具有光照射的退火功能， 所述处理室中的至少一个具有加热功能。 所述设备还具有公共室，所述多个可抽出的处理室通过所述公共室彼此连接，以及设置在所述公共室中的输送装置，用于在每个处理室之间输送基板。