公开(公告)号：US10770502B2

公开(公告)日：2020-09-08

申请号：US16693651

申请日：2019-11-25

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu ,  Yun-Wei Cheng

IPC: H01L27/146

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

公开(公告)号：US20200152684A1

公开(公告)日：2020-05-14

申请号：US16742588

申请日：2020-01-14

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  I-I Cheng ,  Shiu-Ko JangJian ,  Chi-Cherng Jeng ,  Chih-Mu Huang

IPC: H01L27/146 ,  H01L23/00 ,  H01L23/31 ,  H01L23/58

Abstract: Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.

公开(公告)号：US10163966B2

公开(公告)日：2018-12-25

申请号：US14554649

申请日：2014-11-26

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.

Inventor： Yun-Wei Cheng ,  Tsung-Han Tsai ,  Chun-Hao Chou ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu

IPC: H01L27/146

Abstract: Some embodiments of the present disclosure provide a method of manufacturing a back side illuminated (BSI) image sensor. The method includes receiving a semiconductive substrate; forming a photosensitive element at a front side of the semiconductive substrate; forming a transistor coupled to the photosensitive element; forming a recess at a back side of the semiconductive substrate; forming a first dielectric layer lining to a side portion of the recess and over the back side of the semiconductor substrate; covering a conductive material over the first dielectric layer and filling in the recess; forming a conductive column on top of the recess by patterning the conductive material; and forming a second dielectric layer covering the conductive column and the first dielectric layer.

公开(公告)号：US09591242B2

公开(公告)日：2017-03-07

申请号：US13944629

申请日：2013-07-17

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Volume Chien ,  Yun-Wei Cheng ,  Che-Min Lin ,  Shiu-Ko JangJian ,  Chi-Cherng Jeng ,  Chih-Mu Huang

IPC: H04N5/361 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14609 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/1464

Abstract: An embodiment image sensor includes a pixel region spaced apart from a black level control (BLC) region by a buffer region. In an embodiment, a light shield is disposed over the BLC region and extends into the buffer region. In an embodiment, the buffer region includes an array of dummy pixels. Such embodiments effectively reduce light cross talk at the edge of the BLC region, which permits more accurate black level calibration. Thus, the image sensor is capable of producing higher quality images.

Abstract translation: 实施例图像传感器包括通过缓冲区域与黑电平控制（BLC）区域间隔开的像素区域。 在一个实施例中，遮光罩设置在BLC区域上并延伸到缓冲区域中。 在一个实施例中，缓冲区包括虚拟像素阵列。 这样的实施例有效地减少了在BLC区域的边缘处的光串扰，这允许更准确的黑电平校准。 因此，图像传感器能够产生更高质量的图像。

公开(公告)号：US09461089B2

公开(公告)日：2016-10-04

申请号：US15050819

申请日：2016-02-23

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chiu-Jung Chen ,  Chun-Hao Chou ,  Hsin-Chi Chen ,  Kuo-Cheng Lee ,  Volume Chien ,  Yung-Lung Hsu ,  Yun-Wei Cheng

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Abstract translation: 公开了半导体图像传感器装置的制造方法。 该方法包括提供具有像素区域，外围区域和接合焊盘区域的基板。 基板还具有与第一侧相对的第一侧和第二侧。 像素区域包含辐射感测区域。 该方法还包括在焊盘区域中形成接合焊盘; 以及至少在所述像素区域中，在形成所述焊盘之后，在所述衬底的所述第二侧上形成阻光结构。

公开(公告)号：US09450014B2

公开(公告)日：2016-09-20

申请号：US14840143

申请日：2015-08-31

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： I-I Cheng ,  Chih-Mu Huang ,  Pin Chia Su ,  Chi-Cherng Jeng ,  Volume Chien ,  Chih-Kang Chao

IPC: H01L27/02 ,  H01L27/146 ,  H01L27/14 ,  H01L21/82 ,  H01L23/58

CPC classification number: H01L27/14645 ,  H01L21/82 ,  H01L23/585 ,  H01L27/14 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second plurality of edges misaligned with respective ones of the first plurality of edges. The semiconductor substrate further includes a second portion extending from one of the second plurality of edges to one of the first plurality of edges of the die. The second portion includes a first end connected to the one of the second plurality of edges, and a second end having an edge aligned to the one of the first plurality of edges of the die.

公开(公告)号：US09368531B2

公开(公告)日：2016-06-14

申请号：US14308760

申请日：2014-06-19

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Yun-Wei Cheng ,  Chiu-Jung Chen ,  Volume Chien ,  Kuo-Cheng Lee ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14685 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/31116 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of light-blocking structures is disposed over the second side of the substrate. A passivation layer is coated on top surfaces and sidewalls of each of the light-blocking structures. A plurality of spacers is disposed on portions of the passivation layer coated on the sidewalls of the light-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 多个遮光结构设置在基板的第二侧上。 钝化层涂覆在每个遮光结构的顶表面和侧壁上。 多个间隔物设置在涂覆在遮光结构的侧壁上的钝化层的部分上。

公开(公告)号：US20160148967A1

公开(公告)日：2016-05-26

申请号：US15012300

申请日：2016-02-01

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Volume Chien ,  I-Chih Chen ,  Hsin-Chi Chen ,  Hung-Ta Huang ,  Ying-Hao Chen ,  Ying-Lang Wang

IPC: H01L27/146 ,  H01L21/764 ,  H01L23/00

CPC classification number: H01L27/14636 ,  H01L21/764 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/14 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14683 ,  H01L2224/0401 ,  H01L2224/05075 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/08054 ,  H01L2224/13014 ,  H01L2224/13016 ,  H01L2224/48463 ,  H01L2924/01013 ,  H01L2924/12042 ,  H01L2924/12043 ,  H01L2924/15788 ,  H04N5/335 ,  H01L2924/00

Abstract: A bonding pad structure comprises an interconnect layer, an isolation layer over the interconnect layer, a conductive pad, and one or more non-conducting stress-releasing structures. The conductive pad comprises a planar portion over the isolation layer, and one or more bridging portions extending through at least the isolation layer and to the interconnect layer for establishing electric contact therewith, wherein there is a trench in the one or more bridging portions. The one or more non-conducting stress-releasing structures are disposed between the isolation layer and the conductive pad. The trench is surrounded by one of the one or more non-conducting stress-releasing structures from a top view.

Abstract translation: 焊盘结构包括互连层，互连层上的隔离层，导电焊盘和一个或多个非导电应力释放结构。 导电焊盘包括隔离层上的平面部分，以及至少延伸穿过隔离层和互连层的一个或多个桥接部分，用于建立与其的电接触，其中在一个或多个桥接部分中存在沟槽。 一个或多个非导电应力释放结构设置在隔离层和导电垫之间。 从顶视图，沟槽被一个或多个非导电应力释放结构中的一个围绕。

公开(公告)号：US09281338B2

公开(公告)日：2016-03-08

申请号：US14261472

申请日：2014-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Chiu-Jung Chen ,  Yun-Wei Cheng ,  Volume Chien ,  Kuo-Cheng Lee ,  Chun-Hao Chou ,  Yung-Lung Hsu ,  Hsin-Chi Chen

IPC: H01L27/146

CPC classification number: H01L27/14689 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/14698 ,  H01L2224/48463

Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. The radiation-sensing regions are separated by a plurality of gaps. A plurality of radiation-blocking structures is disposed over the second side of the substrate. Each of the radiation-blocking structures is aligned with a respective one of the gaps. A plurality of color filters are disposed in between the radiation-blocking structures.

Abstract translation: 半导体图像传感器包括具有与第一侧相对的第一侧和第二侧的基板。 互连结构设置在衬底的第一侧上。 多个辐射感测区域位于衬底中。 辐射感测区域被配置为感测从第二侧进入衬底的辐射。 辐射感测区域被多个间隙隔开。 多个辐射阻挡结构设置在衬底的第二侧上。 每个辐射阻挡结构与相应的一个间隙对准。 多个滤色器设置在辐射阻挡结构之间。

公开(公告)号：US08962375B2

公开(公告)日：2015-02-24

申请号：US14106977

申请日：2013-12-16

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Hao Shih ,  Szu-Ying Chen ,  Hsing-Lung Chen ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Volume Chien

IPC: H01L31/0232 ,  H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14685 ,  H01L27/14629 ,  H01L27/1464 ,  H01L31/0232 ,  H01L31/02327 ,  H01L31/18

Abstract: A method of creating a reflective shield for an image sensor device includes depositing a first dielectric layer on a substrate, wherein a photodiode is on the substrate. The method further includes removing surface topography by performing chemical mechanical polishing (CMP) on the first dielectric layer. The method further includes patterning the substrate to define an area on a surface of the first dielectric layer, wherein the area is directly above the photodiode. The method further includes depositing a layer of a material with high reflectivity on the substrate, wherein the material fills the area on the surface of the first dielectric layer. The method further includes removing excess material with high reflectivity, wherein the reflective shield is formed and is embedded in the first dielectric layer. The method further includes depositing a second dielectric material on the substrate, wherein the second dielectric material covers the reflective shield.

Abstract translation: 创建用于图像传感器装置的反射屏蔽的方法包括在衬底上沉积第一介电层，其中光电二极管在衬底上。 该方法还包括通过在第一介电层上进行化学机械抛光（CMP）来去除表面形貌。 该方法还包括图案化衬底以限定第一电介质层的表面上的区域，其中该区域直接在光电二极管的上方。 该方法还包括在衬底上沉积具有高反射率的材料层，其中该材料填充第一介电层表面上的区域。 该方法还包括去除具有高反射率的多余材料，其中形成反射屏蔽并嵌入在第一介电层中。 该方法还包括在衬底上沉积第二电介质材料，其中第二电介质材料覆盖反射屏蔽层。