FILTER CIRCUIT AND PLASMA PROCESSING APPARATUS

    公开(公告)号:US20240154594A1

    公开(公告)日:2024-05-09

    申请号:US18412676

    申请日:2024-01-15

    Abstract: A filter circuit includes: a first filter provided in a wiring between a conductive member provided inside the plasma processing apparatus and a power supplier which supplies control power or DC power to the conductive member; and a second filter provided in a wiring between the first filter and the power supplier. The first filter includes a first coil connected in series to the wiring and having no core member. The second filter includes a second coil connected in series to the wiring between the first coil and the power supplier and having core members. The second coil includes a conducting wire arranged on a surface of at least one of the core members opposite to a surface of at least one of the core members facing a hollow inner cylinder, the at least one of the core members being arranged annularly around the inner cylinder.

    PLASMA PROCESSING APPARATUS
    22.
    发明公开

    公开(公告)号:US20240049379A1

    公开(公告)日:2024-02-08

    申请号:US18382062

    申请日:2023-10-20

    Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.

    PLASMA PROCESSING APPARATUS
    25.
    发明申请

    公开(公告)号:US20170338081A1

    公开(公告)日:2017-11-23

    申请号:US15593861

    申请日:2017-05-12

    Inventor: Yohei YAMAZAWA

    CPC classification number: H01J37/32183 H01J37/32091

    Abstract: A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high frequency power supply; a transformer including a primary coil coupled to the high frequency power supply via the matcher, first and second secondary coils; and at least one impedance adjusting circuit having a variable impedance, and installed in at least one of a first serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, and a second serial circuit between the second electrode and a ground connected to the other end of the second secondary coil.

    PLASMA PROCESSING APPARATUS
    26.
    发明申请

    公开(公告)号:US20170330772A1

    公开(公告)日:2017-11-16

    申请号:US15590356

    申请日:2017-05-09

    Inventor: Yohei YAMAZAWA

    Abstract: A capacitively-coupled plasma processing apparatus includes: at least one chamber body providing chambers separated from each other; upper electrodes respectively installed in upper spaces within the chambers; lower electrodes respectively installed in lower spaces within the chambers; a high frequency power supply; a transformer including a primary coil electrically connected to the high frequency power supply, and secondary coils each of which coils having a first end and a second end; first condensers respectively connected between each of the first ends of the secondary coils and the upper electrodes; and second condensers respectively connected between each of the second ends of the secondary coils and the lower electrodes. The primary coil extends around a central axis. The secondary coils are configured to be coaxially disposed with respect to the primary coil. A self-inductance of each of the secondary coils is smaller than that of the primary coil.

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