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公开(公告)号:US20240154594A1
公开(公告)日:2024-05-09
申请号:US18412676
申请日:2024-01-15
Applicant: Tokyo Electron Limited
Inventor: Yohei YAMAZAWA , Naoki FUJIWARA
CPC classification number: H03H7/0153 , H01J37/32027 , H01J37/32165 , H01J37/32174 , H03H7/075
Abstract: A filter circuit includes: a first filter provided in a wiring between a conductive member provided inside the plasma processing apparatus and a power supplier which supplies control power or DC power to the conductive member; and a second filter provided in a wiring between the first filter and the power supplier. The first filter includes a first coil connected in series to the wiring and having no core member. The second filter includes a second coil connected in series to the wiring between the first coil and the power supplier and having core members. The second coil includes a conducting wire arranged on a surface of at least one of the core members opposite to a surface of at least one of the core members facing a hollow inner cylinder, the at least one of the core members being arranged annularly around the inner cylinder.
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公开(公告)号:US20240049379A1
公开(公告)日:2024-02-08
申请号:US18382062
申请日:2023-10-20
Applicant: Tokyo Electron Limited
Inventor: Yohei YAMAZAWA , Takehisa SAITO , Mayo UDA , Keigo TOYODA , Alok RANJAN , Toshiki NAKAJIMA
CPC classification number: H05H1/46 , H01J37/32495 , H01L21/67069 , H01J37/3211 , H01J37/3244 , H05H1/4652
Abstract: A plasma processing apparatus includes an antenna configured to generate plasma of a processing gas in a chamber. The antenna includes: an inner coil provided around the gas supply unit to surround a gas supply unit; and an outer coil provided around the gas supply unit and the inner coil to surround them. The outer coil is configured such that both ends of a wire forming the outer coil are opened; power is supplied from a power supply unit to a central point of the wire; the vicinity of the central point of the wire is grounded; and the outer coil resonates at a wavelength that is a half of a wavelength of the high frequency power. The inner coil is configured such that both ends of a wire forming the inner coil are connected through a capacitor and the inner coil is inductively coupled with the inner coil.
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公开(公告)号:US20210082669A1
公开(公告)日:2021-03-18
申请号:US17105118
申请日:2020-11-25
Applicant: TOKYO ELECTRON LIMITED
Inventor: Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
Abstract: A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.
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公开(公告)号:US20180308662A1
公开(公告)日:2018-10-25
申请号:US16002196
申请日:2018-06-07
Applicant: TOKYO ELECTRON LIMITED
Inventor: Yohei YAMAZAWA , Masashi SAITO , Kazuki DENPOH , Chishio KOSHIMIZU , Jun YAMAWAKU
IPC: H01J37/32 , H05H1/46 , H01L21/683 , H01L21/67
CPC classification number: H01J37/3211 , H01J37/321 , H01J37/32174 , H01J37/3244 , H01J2237/334 , H01L21/67069 , H01L21/6831 , H05H1/46
Abstract: A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
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公开(公告)号:US20170338081A1
公开(公告)日:2017-11-23
申请号:US15593861
申请日:2017-05-12
Applicant: TOKYO ELECTRON LIMITED
Inventor: Yohei YAMAZAWA
IPC: H01J37/32
CPC classification number: H01J37/32183 , H01J37/32091
Abstract: A capacitively coupled plasma processing apparatus includes: a chamber body configured to provide a chamber; first and second electrodes installed such that an internal space of the chamber is defined between the first and second electrodes; a high frequency power supply; a matcher for impedance matching connected to the high frequency power supply; a transformer including a primary coil coupled to the high frequency power supply via the matcher, first and second secondary coils; and at least one impedance adjusting circuit having a variable impedance, and installed in at least one of a first serial circuit between the first electrode and a ground connected to the other end of the first secondary coil, and a second serial circuit between the second electrode and a ground connected to the other end of the second secondary coil.
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公开(公告)号:US20170330772A1
公开(公告)日:2017-11-16
申请号:US15590356
申请日:2017-05-09
Applicant: TOKYO ELECTRON LIMITED
Inventor: Yohei YAMAZAWA
Abstract: A capacitively-coupled plasma processing apparatus includes: at least one chamber body providing chambers separated from each other; upper electrodes respectively installed in upper spaces within the chambers; lower electrodes respectively installed in lower spaces within the chambers; a high frequency power supply; a transformer including a primary coil electrically connected to the high frequency power supply, and secondary coils each of which coils having a first end and a second end; first condensers respectively connected between each of the first ends of the secondary coils and the upper electrodes; and second condensers respectively connected between each of the second ends of the secondary coils and the lower electrodes. The primary coil extends around a central axis. The secondary coils are configured to be coaxially disposed with respect to the primary coil. A self-inductance of each of the secondary coils is smaller than that of the primary coil.
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公开(公告)号:US20170316948A1
公开(公告)日:2017-11-02
申请号:US15494131
申请日:2017-04-21
Applicant: TOKYO ELECTRON LIMITED
Inventor: Yohei YAMAZAWA
IPC: H01L21/3065 , H01L21/67 , H01F38/18 , H03H7/00 , H01F38/14
CPC classification number: H01J37/32082 , H01F27/00 , H01F38/14 , H01F38/18 , H01J37/32009 , H01J37/32091 , H01J37/321 , H01J37/32174 , H01L21/3065 , H01L21/67069 , H03H7/004
Abstract: A transformer includes: a rotary shaft configured to rotate about a central axis of the rotary shaft as a rotational axis; a primary-side first coil configured to extend around a first axis perpendicular to the central axis; a secondary-side second coil configured to extend around a second axis and supported by the rotary shaft, the second axis being perpendicular to the rotational axis in an area surrounded by the first coil; and a secondary-side third coil configured to extend around a third axis and supported by the rotary shaft, the third axis being perpendicular to the rotational axis and forming a predetermined angle with the second axis in the area.
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公开(公告)号:US20140124139A1
公开(公告)日:2014-05-08
申请号:US14070190
申请日:2013-11-01
Applicant: TOKYO ELECTRON LIMITED
Inventor: Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
IPC: H01J37/32
CPC classification number: H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
Abstract: A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.
Abstract translation: 一种等离子体处理装置,包括在处理容器内设置在上侧和下侧并彼此相对的第一和第二电极,连接到第一电极的第一RF电力施加单元和DC电源,以及第二和第三射频功率 应用单元都连接到第二电极。 导电构件设置在处理容器内并接地以通过等离子体释放由直流电源施加的直流电压引起的电流。 导电构件由第二电极周围的第一屏蔽部分支撑,并且在第二电极的安装面和用于导电构件的排气板之间的位置处侧向突出以暴露于等离子体。 导电构件通过第一屏蔽部分的导电内部主体接地。
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