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公开(公告)号：US20150162170A1
公开(公告)日：2015-06-11
申请号：US14564371
申请日：2014-12-09
IPC分类号： H01J37/32
CPC分类号： H01J37/32642 , H01J37/32715
摘要： A degree of tilting caused by consumption of a focus ring can be suppressed. A plasma processing apparatus includes a chamber configured to perform a plasma process on a target object; a mounting table which is provided within the chamber and has a mounting surface on which the target object is mounted; and the focus ring, provided on the mounting table to surround the target object mounted on the mounting surface, having a first flat portion lower than the mounting surface, a second flat portion higher than the first flat portion and not higher than a target surface of the target object, and a third flat portion higher than the second flat portion and the target surface of the target object in sequence from an inner peripheral side thereof to an outer peripheral side thereof.
摘要翻译： 可以抑制由焦点环的消耗引起的倾斜度。 等离子体处理装置包括：室，被配置为对目标物体执行等离子体处理; 安装台，其设置在所述室内并且具有安装所述目标物体的安装面; 以及设置在所述安装台上的聚焦环，以围绕安装在所述安装面上的所述目标物体，具有比所述安装面低的第一平坦部，比所述第一平坦部高的第二平坦部， 目标物体和比目标物体的第二平坦部分和目标物体的目标表面高的第三平坦部分，从其内周侧到外周侧。
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公开(公告)号：US20200111645A1
公开(公告)日：2020-04-09
申请号：US16708856
申请日：2019-12-10
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
摘要： A plasma processing method includes executing an etching process that includes supplying an etching gas into a process container in which a target substrate is supported on a second electrode serving as a lower electrode, and applying an RF power for plasma generation and an RF power for ion attraction to turn the etching gas into plasma and to subject the target substrate to etching. The etching process includes applying a negative DC voltage to a first electrode serving as an upper electrode during the etching to increase an absolute value of self-bias on the first electrode. The etching process includes releasing DC electron current generated by the negative DC voltage to ground through plasma and a conductive member disposed as a ring around the first electrode, by using a first state where the conductive member is connected to a ground potential portion.
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公开(公告)号：US20210166920A1
公开(公告)日：2021-06-03
申请号：US16953808
申请日：2020-11-20
发明人： Chishio KOSHIMIZU , Manabu IWATA
IPC分类号： H01J37/32 , H01L21/683 , H05H1/46
摘要： A disclosed plasma processing apparatus includes a chamber, a substrate support, an electric path, and a measuring device. The substrate support is accommodated in the chamber. The electric path is coupled to or capacitively coupled to an edge ring on the substrate support. The measuring device measures an electrical characteristic value of the edge ring with a voltage applied to the edge ring on the substrate support through the electric path. The electrical characteristic value measured by the measuring device is variable in accordance with a thickness of the edge ring.
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公开(公告)号：US20170032936A1
公开(公告)日：2017-02-02
申请号：US15290846
申请日：2016-10-11
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
IPC分类号： H01J37/32
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/3244 , H01J37/32697 , H01J37/32706 , H01J2237/334 , H01L21/3065
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency, and a second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber to generate plasma of the process gas so as to perform plasma etching.
摘要翻译： 一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。 被配置为施加具有相对较高频率的第一RF功率的第一RF电源和被配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。 可变直流电源连接到上电极。 将工艺气体供应到处理室中以产生处理气体的等离子体，以进行等离子体蚀刻。
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公开(公告)号：US20210082669A1
公开(公告)日：2021-03-18
申请号：US17105118
申请日：2020-11-25
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
摘要： A plasma processing apparatus includes a process container that forms a process space to accommodate a target substrate, and a first electrode and a second electrode disposed opposite each other inside the process container. The first electrode is an upper electrode and the second electrode is a lower electrode and configured to support the target substrate through a mount face. A correction ring is disposed to surround the target substrate placed on the mount face of the second electrode. The correction ring includes a combination of a first ring to be around the target substrate and a second ring arranged around or above the first ring. A power supply unit is configured to apply a first electric potential and a second electric potential respectively to the first ring and the second ring to generate a potential difference between the first and second rings. The power supply unit is configured to variably set the potential difference.
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公开(公告)号：US20150090692A1
公开(公告)日：2015-04-02
申请号：US14494822
申请日：2014-09-24
发明人： Yasuharu SASAKI , Akihito FUSHIMI , Manabu IWATA
IPC分类号： H01J37/32
CPC分类号： H01J37/32449 , C23C16/4586 , C23C16/463 , C23C16/466 , C23C16/505 , H01J37/32715 , H01J37/32724
摘要： A plasma processing apparatus and a plasma processing method are provided which can sufficiently suppress an abnormal discharge in a gas space. A plasma processing apparatus includes a high frequency power source connected between a processing chamber and a base stand; a gas storage unit provided within the base stand and configured to store a gas; a blocking mechanism configured to block a gas introducing port of the gas storage unit; and a connection unit configured to connect a space between a disposition position of a wafer and the base stand, to the gas storage unit.
摘要翻译： 提供了可以充分抑制气体空间中的异常放电的等离子体处理装置和等离子体处理方法。 等离子体处理装置包括连接在处理室和基座之间的高频电源; 设置在所述基座内并构造成储存气体的气体存储单元; 阻塞机构，其构造成阻塞所述气体存储单元的气体导入口; 以及连接单元，被配置为将晶片的配置位置和基座之间的空间连接到气体存储单元。
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公开(公告)号：US20140124139A1
公开(公告)日：2014-05-08
申请号：US14070190
申请日：2013-11-01
发明人： Akira KOSHIISHI , Masaru SUGIMOTO , Kunihiko HINATA , Noriyuki KOBAYASHI , Chishio KOSHIMIZU , Ryuji OHTANI , Kazuo KIBI , Masashi SAITO , Naoki MATSUMOTO , Yoshinobu OHYA , Manabu IWATA , Daisuke YANO , Yohei YAMAZAWA , Hidetoshi HANAOKA , Toshihiro HAYAMI , Hiroki YAMAZAKI , Manabu SATO
IPC分类号： H01J37/32
CPC分类号： H01J37/32422 , H01J37/32018 , H01J37/32091 , H01J37/3244 , H01J37/32522 , H01J37/32834 , H01J2237/2001 , H01J2237/334 , H01J2237/3344 , H01L21/67069 , Y10S156/915
摘要： A plasma processing apparatus includes a first and second electrodes disposed on upper and lower sides and opposite each other within a process container, a first RF power application unit and a DC power supply both connected to the first electrode, and second and third radio frequency power application units both connected to the second electrode. A conductive member is disposed within the process container and grounded to release through plasma a current caused by a DC voltage applied from the DC power supply. The conductive member is supported by a first shield part around the second electrode and laterally protruding therefrom at a position between the mount face of the second electrode and an exhaust plate for the conductive member to be exposed to the plasma. The conductive member is grounded through a conductive internal body of the first shield part.
摘要翻译： 一种等离子体处理装置，包括在处理容器内设置在上侧和下侧并彼此相对的第一和第二电极，连接到第一电极的第一RF电力施加单元和DC电源，以及第二和第三射频功率 应用单元都连接到第二电极。 导电构件设置在处理容器内并接地以通过等离子体释放由直流电源施加的直流电压引起的电流。 导电构件由第二电极周围的第一屏蔽部分支撑，并且在第二电极的安装面和用于导电构件的排气板之间的位置处侧向突出以暴露于等离子体。 导电构件通过第一屏蔽部分的导电内部主体接地。
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公开(公告)号：US20130199727A1
公开(公告)日：2013-08-08
申请号：US13737341
申请日：2013-01-09
发明人： Manabu IWATA , Naoyuki UMEHARA , Hiroki ENDO
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32091 , H01J37/32155 , H01J37/32165 , H05H2001/4675 , H05H2001/4682
摘要： Provided is a capacitively coupled plasma processing apparatus which improves a controllability of the RF bias function and reliably prevents unwanted resonance from being generated on a RF transmission line between a counter electrode and ground potential to enhance reliability of the plasma process. In the capacitive coupled type plasma processing apparatus, three kinds of RF powers from a first, second and third RF power supplies (35, 36, 38) are superimposed and applied to susceptor (lower electrode) (16). In such a three-frequency superimposing and applying application scheme, the frequency-impedance characteristic around upper electrode (48) is considered to prevent a serial resonance from occurring on an RF transmission line around upper electrode (48) in consideration of all the low order frequencies of the IMD relevant to and affecting the plasma process. Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.
摘要翻译： 提供了一种电容耦合等离子体处理装置，其改善了RF偏置功能的可控性，并可靠地防止在对电极和地电位之间的RF传输线上产生不期望的谐振，以增强等离子体处理的可靠性。 在电容耦合型等离子体处理装置中，来自第一，第二和第三RF电源（35,36,38）的三种RF功率被叠加并施加到基座（下电极）（16）。 在这种三频叠加和施加应用方案中，认为上电极周围的频率阻抗特性（48）考虑到所有的低阶，以防止围绕上电极（48）的RF传输线上发生串联谐振 与IMD有关并影响等离子体工艺的频率。 由于碳氟化合物层本身作为抗反射膜和危害掩模起作用，所以可以提高处理的可靠性，同时降低成本。
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