摘要:
There are provided a magnetic material for a magnetic refrigeration apparatus, which improves magnetic refrigeration efficiency by the wide operation temperature range of it, AMR bed using the magnetic material, and a magnetic refrigeration apparatus. The magnetic material is used for the magnetic refrigeration apparatus using a liquid refrigerant, formed by approximately uniformly blending at least two kinds of magnetic particles having different magnetic transition temperatures, and the magnetic particles exhibit an approximately spherical shape with maximum diameter of 0.3 mm or more to 2 mm or less. The AMR bed is filled with the magnetic particles.
摘要:
A polishing cloth used in the chemical mechanical polishing treatment comprises a molded body of (meth)acrylic copolymer having an acid value of 10 to 100 mg KOH/g and a hydroxyl group value of 50 to 150 mg KOH/g.
摘要:
A compact and highly efficient hybrid magnetic refrigerator includes a hybrid refrigerating apparatus wherein an evaporator of a vapor compression refrigeration cycle and a heat exchanger of a magnetic refrigeration cycle are thermally connected. The magnetic refrigeration cycle is provided with a magnetic refrigeration unit in which a magnetic substance dissipates and absorbs heat according to the increase and decrease of a magnetic field in order to heat and cool a refrigerant circulating in its vicinity. The heated refrigerant is cooled by the evaporator of the vapor compression refrigeration cycle and the cooled refrigerant is supplied to the heat exchanger cooling the outside air.
摘要:
A magnetic material comprising a NaZn13 type crystal structure with uniform and fine microstructure exhibiting excellent characteristics as a magnetic refrigeration material, and a method of manufacturing the magnetic refrigeration material are provided. An alloy composition for forming magnetic material of the NaZn13 type crystal structure was melted comprising 0.5 atomic percent to 1.5 atomic percent of B to molten metal. The molten metal is rapidly cooled and solidified by a forced cooling process. Then, a rapidly cooled alloy having the NaZn13 type crystal structure was obtained. In this manner, magnetic materials comprising the NaZn13 type crystal structure phase, or the NaZn13 type crystal structure phase accompanied with other phases such as α-Fe phase having very small phase regions was manufactured without requiring heat treatment for a long time. As the result, productivity of manufacturing the magnetic refrigeration material is remarkably enhanced.
摘要:
The magnetic material for magnetic refrigeration of the present invention is characterized by exhibiting, in a certain temperature region, preferably, only in part of a temperature region from 200 K to 350 K, an inflection point at which a second order differential coefficient of a magnetization curve changes from positive to negative with respect to a magnetic field, within the range of this magnetic field formed using a permanent magnet unit. This magnetic material of the present invention can generate a low temperature by using a relatively low magnetic field, by transferring the entropy between the electron spin system and the lattice system near the temperature at which an inflection point appears on the magnetization curve. Examples of the magnetic material meeting this condition are La(Fe,Si)13, (Hf,Ta)Fe2, (Ti,Sc)Fe2, and (Nb,Mo)Fe2, each containing 50 to 60 atomic % of transition metals such as Fe.
摘要:
The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.
摘要:
A magnetoresistance effect element includes a free layer, a pinned layer and a non-magnetic intermediate layer interposed between the free layer and the pinned layer. Additionally, a metal barrier layer is provided adjacent to the first magnetic layer. An electron reflecting layer located adjacent to the metal barrier layer contains at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides.
摘要:
According to the another aspect of the invention, a magnetoresistance effect element having a magnetoresistance effect film which includes a crystal growth controlling layer as one of films therein, characterized in that a roughness along a boundary between films overlying said crystal growth controlling layer is smaller than a roughness along a boundary between films underlying said crystal growth controlling layer is provided. According to the another aspect of the invention, a magnetoresistance effect element comprising a free layer, pinned layer and a non-magnetic intermediate layer interposed between said free layer and pinned layer, characterized in further comprising a metal barrier layer provided adjacent to said first magnetic layer, and an electron reflecting layer located adjacent to said metal barrier layer and containing at least one selected from oxides, nitrides, carbides, fluorides, chlorides, sulfides and borides is also provided.
摘要:
The novel benzamide derivative represented by formula (1) and the novel anilide derivative represented by formula (13) of this invention has differentiation-inducing effect, and are, therefore, useful a therapeutic or improving agent for malignant tumors, autoimmune diseases, dermatologic diseases and parasitism. In particular, they are highly effective as an anticancer drug, specifically to a hematologic malignancy and a solid carcinoma.
摘要:
A magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer formed on a metallic buffer layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the metallic buffer layer and the first magnetic layer. Or a magnetoresistance effect element provided with a spin valve film composed of a first magnetic layer composed of a laminated film of a magnetic undercoat layer and a ferromagnetic layer, a middle non-magnetic layer formed on the first magnetic layer, and a second magnetic layer formed on the middle non-magnetic layer, has an atomic-diffusion barrier layer whose average thickness is 2 nm or less formed in the interface between the magnetic undercoat layer and the ferromagnetic layer.