公开(公告)号：US5370710A

公开(公告)日：1994-12-06

申请号：US82912

申请日：1993-06-29

申请人： Toru Nagaura ,  Hisayuki Kato

发明人： Toru Nagaura ,  Hisayuki Kato

IPC分类号： C01B31/02 ,  H01M2/34 ,  H01M4/131 ,  H01M4/50 ,  H01M4/505 ,  H01M10/05 ,  H01M10/052 ,  H01M10/36

CPC分类号： H01M2/34 ,  H01M10/05 ,  H01M4/131 ,  H01M4/505 ,  Y10T29/49108

摘要： A nonaqueous electrolyte secondary cell provided with (a) a negative electrode consisting essentially of a carrier for a negative electrode active material , said carrier being capable of being doped and dedoped with lithium, (b) a positive electrode comprising, as an essential positive electrode active material, Li.sub.1+x Mn.sub.2 O.sub.4, wherein x>0, obtained by doping a lithium-manganese complex oxide with lithium and (c) a nonaqueous electrolyte. The secondary cell has an increased cell capacity as well as a high energy density and an excellent charge-discharge characteristics .

摘要翻译： 一种非水电解质二次电池，其具有（a）负极，主要由负极活性物质的载体构成，所述载体能够掺杂并脱锂，（b）正极，其包含作为必需正极的正极 活性物质Li1 + xMn2O4，其中x> 0，通过用锂掺杂锂锰复合氧化物和（c）非水电解质获得。 二次电池具有增加的电池容量以及高能量密度和优异的充放电特性。

公开(公告)号：US20120080757A1

公开(公告)日：2012-04-05

申请号：US13376081

申请日：2009-06-05

申请人： Hisayuki Kato ,  Yoshihiko Kusakabe

发明人： Hisayuki Kato ,  Yoshihiko Kusakabe

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823468 ,  H01L21/823418 ,  H01L21/823814 ,  H01L21/823864 ,  H01L22/26 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659

摘要： First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as a mask, and then, cleaning is done. Since silicon nitride films are formed on surfaces of the first protective films, the resistance to chemical solutions is improved. Furthermore, second protective films are formed on the first protective films, respectively. In a pMOS region, an extention implantation region is formed by causing a portion of the first protective film and a portion of the second protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as the mask, and then, cleaning is done.

摘要翻译： 形成第一保护膜以覆盖栅电极部分的侧表面。 在nMOS区域中，通过使位于栅极电极部分的侧表面上的第一保护膜的一部分用作偏移间隔物并使用偏移间隔物作为掩模来形成延伸注入区域，然后清洁 完成了 由于在第一保护膜的表面上形成氮化硅膜，因此提高了对化学溶液的耐性。 此外，在第一保护膜上分别形成第二保护膜。 在pMOS区域中，通过使第一保护膜的一部分和位于栅极电极部分的侧表面上的第二保护膜的一部分用作偏移间隔物并使用偏移间隔物形成延伸注入区 面具，然后进行清洁。

公开(公告)号：US20100320562A1

公开(公告)日：2010-12-23

申请号：US12869323

申请日：2010-08-26

申请人： KAZUSHI KONO ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

发明人： KAZUSHI KONO ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

IPC分类号： H01L29/86

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

公开(公告)号：US20080310700A1

公开(公告)日：2008-12-18

申请号：US11883152

申请日：2006-01-17

申请人： Mitsuyasu Fukusawa ,  Hisayuki Kato ,  Toshitaka Wakabayashi ,  Noboru Maekawa

发明人： Mitsuyasu Fukusawa ,  Hisayuki Kato ,  Toshitaka Wakabayashi ,  Noboru Maekawa

IPC分类号： G01N21/88

CPC分类号： G01N21/8921 ,  B07C5/342 ,  B21C51/00 ,  G01N21/8914 ,  G01N2021/8918

摘要： An article visual inspection apparatus capable of detecting that the surface conditions of an article are so inferior as to render the article unusable as a product and rejecting the same as a defective article by inspecting the article for external defects, occurring on the surface of the article, such as streaks, dice marks and rough surfaces of an aluminum extruded shape. The visual inspection apparatus comprises an imaging device (1) for imaging the surface of the article, and an image processing device (3) for capturing the picked up image. The image processing device (3) has a plurality of image processing units that compare a captured image with a set judging reference value to evaluate the result, whereby the quality of surface conditions is evaluated based on external defects such as streaks, dice marks and rough surfaces of an aluminum extruded shape, and evaluations by the respective image processing units are weighted by a weighting unit to thereby comprehensively judge whether to accept or reject the article.

摘要翻译： 一种物品视觉检查装置，其能够检测物品的表面状况如此差，从而使物品不能作为产品使用，并且通过检查制品在物品的表面上发生的外部缺陷而将其作为缺陷物品排除 ，例如条纹，骰子标记和铝挤压形状的粗糙表面。 目视检查装置包括用于对物品的表面进行成像的成像装置（1）和用于捕获拍摄图像的图像处理装置（3）。 图像处理装置（3）具有多个图像处理单元，其将拍摄图像与设定判定基准值进行比较，以评价结果，由此基于条纹，小标记和粗糙度等外部缺陷来评价表面状态的质量 铝挤压形状的表面和各个图像处理单元的评估由加权单元加权，从而全面地判断是否接受或拒绝该物品。

公开(公告)号：US06579754B2

公开(公告)日：2003-06-17

申请号：US09850224

申请日：2001-05-08

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L218242

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of a crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

摘要翻译： 本发明是以制造成品率高的铁电薄膜电容器作为存储电容器的高质量的半导体存储器件，规定了电容器的铁电薄膜，晶体尺寸的相对标准偏差为13％， 从而确保高的剩余极化值和小的薄膜疲劳（大的可重写数量）。

公开(公告)号：US06445025B2

公开(公告)日：2002-09-03

申请号：US09848420

申请日：2001-05-04

申请人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

发明人： Kazufumi Suenaga ,  Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Jun Tanaka ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Hisahiko Abe

IPC分类号： H01L2976

CPC分类号： H01L28/55 ,  G11C11/22 ,  H01L21/31691

摘要： The present invention is a high quality semiconductor memory device using a ferroelectric thin film capacitor as a memory capacitor at a high manufacturing yield, the ferroelectric thin film of the capacitor is specified such that the relative standard deviation of crystal grain sizes is 13% or less, to thereby ensure a high remanent polarization value and a small film fatigue (large rewritable number).

公开(公告)号：US06316798B1

公开(公告)日：2001-11-13

申请号：US09331670

申请日：1999-06-23

申请人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

发明人： Kiyoshi Ogata ,  Kazuhiko Horikoshi ,  Kazufumi Suenaga ,  Hisayuki Kato ,  Keiichi Yoshizumi ,  Masahito Yamazaki

IPC分类号： H01L2976

CPC分类号： H01L28/57 ,  H01L27/1203

摘要： A long life ferroelectric memory device using a thin ferroelectric film capacitor as a memory capacitor is obtained by disposing one or a plurality of degradation preventive layers on an upper protection electrode and an upper electrode 8 and a degradation preventive layer at the boundary of ferroelectric layer 7 /electrodes 6, 8, or providing a step of decreasing a modified layer at the boundary of ferroelectric layer 7/upper electrode 8. This provides a thin ferroelectric film capacitor which is subjected to less fatigue and imprinting and which has less degradation of the ferroelectric characteristic, thereby to attain a long life ferroelectric memory device.

摘要翻译： 使用薄铁电薄膜电容器作为记忆电容器的长寿命铁电存储器件通过在铁氧体层7的边界上的上保护电极和上电极8以及劣化防止层上设置一个或多个降解防止层来获得 /电极6,8，或者提供在铁电层7 /上电极8的边界处减小改性层的步骤。这提供了一种薄铁电薄膜电容器，其经受较少的疲劳和压印，并且铁电体的劣化较少 特性，从而获得长寿命的铁电存储器件。

公开(公告)号：US6001507A

公开(公告)日：1999-12-14

申请号：US992459

申请日：1997-12-17

申请人： Takashi Ono ,  Hisayuki Kato ,  Yoshikatsu Yamamoto ,  Takai Mori

发明人： Takashi Ono ,  Hisayuki Kato ,  Yoshikatsu Yamamoto ,  Takai Mori

IPC分类号： C08L79/08 ,  C01B31/02 ,  C09J127/16 ,  C09J179/08 ,  H01M4/02 ,  H01M4/48 ,  H01M4/525 ,  H01M4/587 ,  H01M4/62 ,  H01M10/05 ,  H01M10/0525 ,  H01M10/0566 ,  H01M4/58 ,  H01M6/16

CPC分类号： H01M4/587 ,  H01M10/0525 ,  H01M4/5815 ,  H01M4/621 ,  H01M4/622 ,  H01M4/623 ,  H01M4/131 ,  H01M4/136 ,  H01M4/485 ,  H01M4/505 ,  H01M4/525 ,  H01M4/5825

摘要： A non-aqueous electrolyte battery which exhibits satisfactory reliability because reduction in the discharge capacity can be significantly prevented even after use with rapid temperature change and which enables excellent productivity to be realized. The non-aqueous electrolyte battery includes a cathode and an anode in which an active material for the cathode and/or an active material for the anode is integrated by a binder, wherein the binder for the cathode and/or the binder for the anode is a mixture of polyimide, which is soluble in an organic solvent, and a fluorine polymer. The polyimide is expressed by the following formula: ##STR1##

摘要翻译： 即使在快速变化的使用后也可以显着地防止放电容量的降低而显示令人满意的可靠性的非水电解质电池，并且能够实现优异的生产率。 非水电解质电池包括阴极和阳极，其中用于阴极的活性材料和/或用于阳极的活性材料通过粘合剂整合，其中阴极和/或阳极粘合剂的粘合剂是 可溶于有机溶剂的聚酰亚胺和氟聚合物的混合物。 聚酰亚胺由下式表示：

公开(公告)号：US5670793A

公开(公告)日：1997-09-23

申请号：US527942

申请日：1995-09-14

申请人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

发明人： Hideo Miura ,  Shunji Moribe ,  Hisayuki Kato ,  Atsuyoshi Koike ,  Shuji Ikeda ,  Asao Nishimura

IPC分类号： H01L21/8247 ,  C23C16/24 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52 ,  H01L21/20 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/336 ,  H01L29/04 ,  H01L29/49 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L31/18

CPC分类号： C23C16/45561 ,  C23C16/24 ,  C23C16/45523 ,  C23C16/52 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02579 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/28035 ,  H01L21/28525 ,  H01L21/28556 ,  H01L29/045 ,  H01L29/4916 ,  H01L29/66757 ,  H01L31/182 ,  H01L2924/0002 ,  Y02E10/546 ,  Y02P70/521

摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

摘要翻译： 包含多晶硅薄膜的半导体器件可以通过沉积非杂质掺杂的硅薄膜来制造，其中硅薄膜的晶粒主要具有柱状结构和单个晶粒的晶体取向几乎是均匀的方向 或下层膜的界面上的杂质层，然后如果需要，沉积杂质掺杂的硅薄膜，然后进行多结晶热处理。

公开(公告)号：US5427875A

公开(公告)日：1995-06-27

申请号：US962583

申请日：1992-12-28

申请人： Yoshikatsu Yamamoto ,  Shigeru Fujita ,  Hisayuki Kato

发明人： Yoshikatsu Yamamoto ,  Shigeru Fujita ,  Hisayuki Kato

IPC分类号： H01M2/34 ,  H01M4/52 ,  H01M4/525 ,  H01M10/052 ,  H01M10/36 ,  H01M10/42 ,  H01M4/02

CPC分类号： H01M10/4235 ,  H01M10/052 ,  H01M2/34 ,  H01M4/525

摘要： A non-aqueous liquid electrolyte secondary cell, in which Li.sub.x MO.sub.2, where M is at least one transition metal, preferably at least one of Co and Ni , with 0.05.ltoreq.X.ltoreq.1.10, and in which charging and discharging is carried out by doping and release of lithium, is disclosed. The non-aqueous liquid electrolyte secondary cell has a current breaking device operated responsive to rise in the internal pressure in the cell. The current breaking device is adapted to be actuated positively by adding lithium carbonate to the active material of the positive electrode and providing the active material with surface portion covered with lithium carbonate. Preferably, the amount of addition and the specific surface area of lithium carbonate are 0.5 to 15 wt % and not less than 0.1 m.sup.2 /g, respectively.

摘要翻译： PCT No.PCT / JP92 / 00541 Sec。 371日期1992年12月28日 102（e）日期1992年12月28日PCT提交1992年4月24日PCT公布。 公开号WO92 / 20112 PCT 日期：1992年11月12日。一种非水电解液二次电池，其中M为至少一种过渡金属，优选为Co和Ni中至少一种，0.05≤X= 1.10的LixMO2，以及 其中通过掺杂和释放锂进行充电和放电。 非水电解液二次电池具有响应于电池内部压力升高而工作的电流断路装置。 电流断路装置适用于通过向正电极的活性材料中加入碳酸锂并为活性材料提供覆盖有碳酸锂的表面部分而被积极地驱动。 优选地，碳酸锂的添加量和比表面积分别为0.5〜15重量％且不小于0.1m 2 / g。