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公开(公告)号：US08194967B2
公开(公告)日：2012-06-05
申请号：US11883152
申请日：2006-01-17
IPC分类号： G06K9/00
CPC分类号： G01N21/8921 , B07C5/342 , B21C51/00 , G01N21/8914 , G01N2021/8918
摘要： An article visual inspection apparatus capable of detecting that the surface conditions of an article are so inferior as to render the article unusable as a product and rejecting the same as a defective article by inspecting the article for external defects, occurring on the surface of the article, such as streaks, dice marks and rough surfaces of an aluminum extruded shape. The visual inspection apparatus comprises an imaging device (1) for imaging the surface of the article, and an image processing device (3) for capturing the picked up image. The image processing device (3) has a plurality of image processing units that compare a captured image with a set judging reference value to evaluate the result, whereby the quality of surface conditions is evaluated based on external defects such as streaks, dice marks and rough surfaces of an aluminum extruded shape, and evaluations by the respective image processing units are weighted by a weighting unit to thereby comprehensively judge whether to accept or reject the article.
摘要翻译： 一种物品视觉检查装置，其能够检测物品的表面状况如此差，从而使物品不能作为产品使用，并且通过检查制品在物品的表面上发生的外部缺陷而将其作为缺陷物品排除 ，例如条纹，骰子标记和铝挤压形状的粗糙表面。 目视检查装置包括用于对物品的表面进行成像的成像装置（1）和用于捕获拍摄图像的图像处理装置（3）。 图像处理装置（3）具有多个图像处理单元，其将拍摄图像与设定判定基准值进行比较，以评价结果，由此基于条纹，小标记和粗糙度等外部缺陷来评价表面状态的质量 铝挤压形状的表面和各个图像处理单元的评估由加权单元加权，从而全面地判断是否接受或拒绝该物品。
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公开(公告)号：US20080310700A1
公开(公告)日：2008-12-18
申请号：US11883152
申请日：2006-01-17
IPC分类号： G01N21/88
CPC分类号： G01N21/8921 , B07C5/342 , B21C51/00 , G01N21/8914 , G01N2021/8918
摘要： An article visual inspection apparatus capable of detecting that the surface conditions of an article are so inferior as to render the article unusable as a product and rejecting the same as a defective article by inspecting the article for external defects, occurring on the surface of the article, such as streaks, dice marks and rough surfaces of an aluminum extruded shape. The visual inspection apparatus comprises an imaging device (1) for imaging the surface of the article, and an image processing device (3) for capturing the picked up image. The image processing device (3) has a plurality of image processing units that compare a captured image with a set judging reference value to evaluate the result, whereby the quality of surface conditions is evaluated based on external defects such as streaks, dice marks and rough surfaces of an aluminum extruded shape, and evaluations by the respective image processing units are weighted by a weighting unit to thereby comprehensively judge whether to accept or reject the article.
摘要翻译： 一种物品视觉检查装置，其能够检测物品的表面状况如此差，从而使物品不能作为产品使用，并且通过检查制品在物品的表面上发生的外部缺陷而将其作为缺陷物品排除 ，例如条纹，骰子标记和铝挤压形状的粗糙表面。 目视检查装置包括用于对物品的表面进行成像的成像装置（1）和用于捕获拍摄图像的图像处理装置（3）。 图像处理装置（3）具有多个图像处理单元，其将拍摄图像与设定判定基准值进行比较，以评价结果，由此基于条纹，小标记和粗糙度等外部缺陷来评价表面状态的质量 铝挤压形状的表面和各个图像处理单元的评估由加权单元加权，从而全面地判断是否接受或拒绝该物品。
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公开(公告)号：US09449883B2
公开(公告)日：2016-09-20
申请号：US13376081
申请日：2009-06-05
申请人： Hisayuki Kato , Yoshihiko Kusakabe
发明人： Hisayuki Kato , Yoshihiko Kusakabe
IPC分类号： H01L27/092 , H01L21/8234 , H01L21/8238 , H01L21/66 , H01L29/51 , H01L29/66
CPC分类号： H01L21/823468 , H01L21/823418 , H01L21/823814 , H01L21/823864 , H01L22/26 , H01L29/517 , H01L29/665 , H01L29/6656 , H01L29/6659
摘要： First protective films are formed to cover side surfaces of gate electrode portions. In an nMOS region, an extention implantation region is formed by causing a portion of the first protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as a mask, and then, cleaning is done. Since silicon nitride films are formed on surfaces of the first protective films, the resistance to chemical solutions is improved. Furthermore, second protective films are formed on the first protective films, respectively. In a pMOS region, an extention implantation region is formed by causing a portion of the first protective film and a portion of the second protective film located on the side surface of the gate electrode portion to function as an offset spacer and using the offset spacer as the mask, and then, cleaning is done.
摘要翻译： 形成第一保护膜以覆盖栅电极部分的侧表面。 在nMOS区域中，通过使位于栅极电极部分的侧表面上的第一保护膜的一部分用作偏移间隔物并使用偏移间隔物作为掩模来形成延伸注入区域，然后清洁 完成了 由于在第一保护膜的表面上形成氮化硅膜，因此提高了对化学溶液的耐性。 此外，在第一保护膜上分别形成第二保护膜。 在pMOS区域中，通过使第一保护膜的一部分和位于栅极电极部分的侧表面上的第二保护膜的一部分用作偏移间隔物并使用偏移间隔物形成延伸注入区 面具，然后进行清洁。
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公开(公告)号：US06187100B1
公开(公告)日：2001-02-13
申请号：US09413890
申请日：1999-10-07
申请人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
发明人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
IPC分类号： C23C1600
CPC分类号： H01L21/02667 , C23C16/24 , C23C16/45523 , C23C16/45561 , C23C16/52 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/28035 , H01L21/28525 , H01L21/28556 , H01L29/045 , H01L29/4916 , H01L29/66757 , H01L31/182 , H01L2924/0002 , Y02E10/546 , Y02P70/521 , H01L2924/00
摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
摘要翻译： 包含多晶硅薄膜的半导体器件可以通过沉积非杂质掺杂的硅薄膜来制造，其中硅薄膜的晶粒主要具有柱状结构和单个晶粒的晶体取向几乎是均匀的方向 或下层膜的界面上的杂质层，然后如果需要，沉积杂质掺杂的硅薄膜，然后进行多结晶热处理。
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公开(公告)号：US5053297A
公开(公告)日：1991-10-01
申请号：US502679
申请日：1990-04-02
申请人： Takayuki Yamahira , Hisayuki Kato , Masanori Anzai
发明人： Takayuki Yamahira , Hisayuki Kato , Masanori Anzai
CPC分类号： H01M10/0525 , H01M4/36 , H01M4/364 , H01M4/485 , H01M4/525 , H01M2004/028
摘要： A nonaqueous electrolyte secondary battery is disclosed, which comprises an anode having a carbonaceous material as the anode active material which permits lithium to be doped and undoped and a current collector, a cathode having a lithium compound as the cathode active material which permits lithium to be doped and undoped, and a nonaqueous electrolyte. The cathode active material contains the primary active material of a first lithium compound having the potential which is more "noble" than the potential of the current collector and the auxiliary active material of a second lithium compound having the potential which is more "base" than the potential of the current collector. The auxiliary active material works to avoid the dissolution of the anode current collector at the final stage of discharge.
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公开(公告)号：US08487402B2
公开(公告)日：2013-07-16
申请号：US12869323
申请日：2010-08-26
IPC分类号： H01L29/00
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.
摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。
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公开(公告)号：US20110006392A1
公开(公告)日：2011-01-13
申请号：US12878977
申请日：2010-09-09
IPC分类号： H01L23/525
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.
摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。
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8.发明授权Process for producing semiconductor device having crystallized film formed from deposited amorphous film 失效具有由沉积的非晶膜形成的具有结晶膜的半导体器件的制造方法公开(公告)号：US06559037B2
公开(公告)日：2003-05-06
申请号：US09809046
申请日：2001-03-16
申请人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
发明人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
IPC分类号： H01L2120
CPC分类号： H01L21/02667 , C23C16/24 , C23C16/45523 , C23C16/45561 , C23C16/52 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/28035 , H01L21/28525 , H01L21/28556 , H01L29/045 , H01L29/4916 , H01L29/66757 , H01L31/182 , H01L2924/0002 , Y02E10/546 , Y02P70/521 , H01L2924/00
摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
摘要翻译： 包含多晶硅薄膜的半导体器件可以通过沉积非杂质掺杂的硅薄膜来制造，其中硅薄膜的晶粒主要具有柱状结构和单个晶粒的晶体取向几乎是均匀的方向 或下层膜的界面上的杂质层，然后如果需要，沉积杂质掺杂的硅薄膜，然后进行多结晶热处理。
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公开(公告)号：US06326216B1
公开(公告)日：2001-12-04
申请号：US08906102
申请日：1997-08-05
IPC分类号： H01L2100
CPC分类号： H01L21/02197 , C23C14/088 , C23C14/3414 , H01L21/02266 , H01L21/31691 , H01L27/10814 , H01L28/55
摘要： In order to improve the dielectric constant, residual dielectric polarization, hysteresis characteristics, etc. of a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM, a target having a density of at least 90% of the theoretical value is used in forming, by sputtering, a high-dielectric or ferroelectric thin film for use in the formation of capacitive insulating films of capacitors of a DRAM or a ferroelectric RAM.
摘要翻译： 为了提高用于形成DRAM或铁电RAM的电容器的电容绝缘膜的高电介质或铁电薄膜的介电常数，残留介电极化，滞后特性等，具有密度 至少90％的理论值用于通过溅射形成用于形成DRAM或铁电RAM的电容器的电容绝缘膜的高电介质或铁电薄膜。
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公开(公告)号：US06204155B1
公开(公告)日：2001-03-20
申请号：US09597985
申请日：2000-06-19
申请人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
发明人： Hideo Miura , Shunji Moribe , Hisayuki Kato , Atsuyoshi Koike , Shuji Ikeda , Asao Nishimura
IPC分类号： H01L2120
CPC分类号： H01L21/02667 , C23C16/24 , C23C16/45523 , C23C16/45561 , C23C16/52 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02609 , H01L21/0262 , H01L21/28035 , H01L21/28525 , H01L21/28556 , H01L29/045 , H01L29/4916 , H01L29/66757 , H01L31/182 , H01L2924/0002 , Y02E10/546 , Y02P70/521 , H01L2924/00
摘要： A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.
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