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169 条记录 (耗时 0.027 秒)

    Ferroelectric memory device and method of manufacturing the same
    21.
    发明授权
    Ferroelectric memory device and method of manufacturing the same 失效
    铁电存储器件及其制造方法

    公开(公告)号：US06922351B2

    公开(公告)日：2005-07-26

    申请号：US10426635

    申请日：2003-05-01

    申请人： Eiji Natori ,  Takeshi Kijima

    发明人： Eiji Natori ,  Takeshi Kijima

    IPC分类号： H01L21/02 ,  H01L21/8246 ,  H01L27/115 ,  G11C7/00

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/55

    摘要： A ferroelectric memory device includes first electrodes, second electrodes arranged in a direction which intersects the first electrodes, and ferroelectric films disposed in at least intersecting regions of the first electrodes and the second electrodes. Capacitors formed of the first electrodes, the ferroelectric films, and the second electrodes are disposed in a matrix. A ferroelectric phase and a paraelectric phase are mixed in each of the ferroelectric films.

    摘要翻译： 铁电存储器件包括第一电极，沿与第一电极相交的方向布置的第二电极，以及设置在第一电极和第二电极的至少交叉区域中的铁电体膜。 由第一电极，铁电体膜和第二电极形成的电容器以矩阵形式设置。 在每个铁电体膜中混合铁电相和顺电相。

    Film forming apparatus, substrate for forming oxide thin film and production method thereof
    22.
    发明申请
    Film forming apparatus, substrate for forming oxide thin film and production method thereof 有权
    成膜装置，用于形成氧化物薄膜的基板及其制造方法

    公开(公告)号：US20050148200A1

    公开(公告)日：2005-07-07

    申请号：US11071116

    申请日：2005-03-04

    申请人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    发明人： Takeshi Kijima ,  Eiji Natori ,  Mitsuhiro Suzuki

    IPC分类号： C23C14/22 ,  C23C14/50 ,  C23C14/56 ,  H01L21/285 ,  H01L29/04 ,  H01L21/31 ,  H01L31/036

    CPC分类号： C23C14/568 ,  C23C14/505

    摘要： The invention provides a film forming apparatus that is capable of forming films sequentially with two types of film forming mechanisms in the same chamber. The film forming apparatus according to the present invention includes a Pt target disposed at one side within a film forming chamber, a sputtering output mechanism to supply to the Pt target, a Pt vapor deposition source disposed at an other side within the film forming chamber, a vapor deposition output mechanism to supply to the Pt vapor deposition source, a substrate holder disposed between the Pt target and the Pt vapor deposition source within the film forming chamber to mount a substrate, a rotating mechanism to move the substrate holder so that the substrate directs to the Pt target or to the Pt vapor deposition source, a heating mechanism to heat the substrate when the substrate is subjected to a sputtering film forming, and a cooling mechanism to cool the substrate when the substrate is subjected to vapor deposition film forming.

    摘要翻译： 本发明提供一种成膜装置，其能够在相同的室中依次用两种成膜机构形成膜。 根据本发明的成膜装置包括设置在成膜室内的一侧的Pt靶，向Pt靶供给的溅射输出机构，设置在成膜室内的另一侧的Pt蒸镀源， 蒸镀输出机构，供给Pt蒸镀源，设置在成膜室内的Pt靶和Pt蒸镀源之间的基板保持架，安装基板;旋转机构，使基板保持架移动，使基板 指向Pt靶或Pt气相沉积源，当衬底经受溅射膜形成时加热衬底的加热机构，以及当衬底经历气相沉积膜形成时冷却衬底的冷却机构。