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    Semiconductor physical quantity sensor
    21.
    发明授权
    Semiconductor physical quantity sensor 失效
    半导体物理量传感器

    公开(公告)号：US5987989A

    公开(公告)日：1999-11-23

    申请号：US795402

    申请日：1997-02-05

    申请人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    发明人： Toshimasa Yamamoto ,  Kenichi Ao ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/13 ,  H01L29/84

    CPC分类号： B81B7/0006 ,  G01C19/5719 ,  G01P15/0802 ,  G01P15/131 ,  B81B2201/0235 ,  G01P2015/0814

    摘要： A semiconductor physical quantity sensor includes a substrate and a beam structure having movable electrodes and spacing a given distance from an upper surface of the substrate. First fixed electrodes and second fixed electrodes are fixedly provided on the upper surface of the substrate. Each first fixed electrode faces one side of the corresponding movable electrode, while each second fixed electrode faces the other side of the corresponding movable electrode. A laminated structure of a lower layer insulating film, conductive films and an upper layer insulating film is arranged at an upper portion of the substrate. The conductive layers form a first wiring pattern for the first fixed electrodes, a second wiring pattern for the second fixed electrodes and a lower electrode. The first wiring pattern is electrically connected to the first fixed electrodes via openings formed in the upper layer insulating film and anchors of the first fixed electrodes, respectively. The second wiring pattern is electrically connected to the second fixed electrodes via openings formed in the upper layer insulating film and anchors of the second fixed electrodes, respectively. The lower electrode is electrically connected to the beam structure via an opening formed in the upper layer insulating film and an anchor of the beam structure.

    摘要翻译： 半导体物理量传感器包括基板和具有可移动电极并且与基板的上表面间隔给定距离的光束结构。 第一固定电极和第二固定电极固定地设置在基板的上表面上。 每个第一固定电极面对相应的可动电极的一侧，而每个第二固定电极面对相应的可移动电极的另一侧。 下层绝缘膜，导电膜和上层绝缘膜的层叠结构设置在基板的上部。 导电层形成用于第一固定电极的第一布线图案，第二固定电极的第二布线图案和下电极。 第一布线图案分别经由形成在上层绝缘膜中的开口和第一固定电极的锚固件电连接到第一固定电极。 第二布线图案分别经由形成在上层绝缘膜中的开口和第二固定电极的锚固件电连接到第二固定电极。 下电极通过形成在上层绝缘膜中的开口和梁结构的锚固件而电连接到梁结构。

    Semiconductor acceleration sensor with source and drain regions
    22.
    发明授权
    Semiconductor acceleration sensor with source and drain regions 失效
    具有源极和漏极区域的半导体加速度传感器

    公开(公告)号：US5627397A

    公开(公告)日：1997-05-06

    申请号：US402949

    申请日：1995-03-13

    申请人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    发明人： Kazuhiko Kano ,  Yukihiro Takeuchi ,  Takamoto Watanabe ,  Kenichi Ao ,  Masakazu Kanosue ,  Hirofumi Uenoyama ,  Kenichi Nara

    IPC分类号： G01P1/00 ,  G01P15/12 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/124 ,  G01P1/006 ,  Y10S73/01

    摘要： A semiconductor acceleration sensor according to the present invention performs acceleration detection by means of detecting increase or decrease in electrical current flowing between fixed electrodes formed on a semiconductor substrate taking a movable section in a movable state supported on the semiconductor substrate as a gate electrode. Two transistor structures are utilized in this detection. Current between fixed electrodes in one transistor structure increases when the movable section is subjected to acceleration and is displaced. At that time, current between fixed electrodes in the other transistor structure decreases. These two transistor structures are disposed proximately. By means of this proximate disposition, fluctuations in characteristics of both transistors are reduced, and by means of acceleration detection by differential type, temperature characteristics of the two transistors can be canceled favorably.

    摘要翻译： 根据本发明的半导体加速度传感器通过检测形成在半导体衬底上的固定电极之间的电流的增加或减少来执行加速度检测，该半导体衬底以可移动状态支撑在作为栅电极的半导体衬底上的可移动状态。 在该检测中使用两个晶体管结构。 一个晶体管结构中的固定电极之间的电流在可移动部分受到加速并被移位时增加。 此时，另一晶体管结构中的固定电极之间的电流降低。 这两个晶体管结构靠近地设置。 通过这种接近的配置，两个晶体管的特性波动减小，并且通过差分类型的加速度检测，可以有利地消除两个晶体管的温度特性。

    Acceleration sensor using MIS-like transistors
    23.
    发明授权
    Acceleration sensor using MIS-like transistors 失效
    加速传感器采用MIS类晶体管

    公开(公告)号：US5541437A

    公开(公告)日：1996-07-30

    申请号：US404295

    申请日：1995-03-14

    申请人： Takamoto Watanabe ,  Shigeru Nonoyama ,  Yukihiro Takeuchi

    发明人： Takamoto Watanabe ,  Shigeru Nonoyama ,  Yukihiro Takeuchi

    IPC分类号： G01P15/125 ,  B81B3/00 ,  G01P15/08 ,  G01P15/12 ,  G01P15/13 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/131 ,  G01P15/124 ,  G01P2015/0814 ,  Y10S73/01

    摘要： In an acceleration sensor having movable gates and a movable electrode and having a signal processing portion, the movable gates generate a differential voltage from acceleration in one direction and its output signal is fed back to the movable electrode. The balance of the movable portion is kept using an electrostatic force which cancels the acceleration acting on the movable portion, and signal detection is stabilized using closed loop control. Since signal detection is on a differential basis, acceleration can be detected in only one direction. Since a change in current is detected as a voltage difference, no carrier wave is required. Since MISFETs having movable gates are formed in pairs, there is no influence of temperature drifts. The use of a differential signal similarly cancels the influence of fluctuations of the power supply. Configuration of an acceleration sensor is thus simplified.

    摘要翻译： 在具有可动栅极和可动电极并具有信号处理部分的加速度传感器中，可移动栅极从一个方向的加速度产生差分电压，并将其输出信号反馈到可动电极。 使用抵消作用在可动部上的加速度的静电力来保持可动部的平衡，并且使用闭环控制来稳定信号检测。 由于信号检测是基于差分的，所以只能在一个方向上检测加速度。 由于电流变化被检测为电压差，因此不需要载波。 由于具有可动栅极的MISFET成对成形，所以不会有温度漂移的影响。 差分信号的使用也可以抵消电源波动的影响。 因此，加速度传感器的结构被简化。

    Optical device
    25.
    发明授权
    Optical device 有权
    光学装置

    公开(公告)号：US07612944B2

    公开(公告)日：2009-11-03

    申请号：US11979362

    申请日：2007-11-01

    申请人： Junji Oohara ,  Yukihiro Takeuchi

    发明人： Junji Oohara ,  Yukihiro Takeuchi

    IPC分类号： G02B27/10 ,  G02B6/32

    CPC分类号： G02B3/00 ,  G02B3/02

    摘要： An optical device includes a silicon substrate, and multiple columnar members. The columnar members are integrally formed with the silicon substrate and stand on a top surface of the silicon substrate. The columnar members are made of silicon oxide. Light enters the columnar members in a first direction and propagates through the columnar members in a second direction. The columnar members extend in a third direction. The columnar members are arranged with a gap in the second direction. The second direction is perpendicular to the third direction. An angle between the first and third directions is greater than a critical angle and equal to or less than 90 degrees.

    摘要翻译： 光学器件包括硅衬底和多个柱状构件。 柱状构件与硅衬底一体地形成并且站立在硅衬底的顶表面上。 柱状构件由氧化硅制成。 光沿第一方向进入柱状构件，并沿着第二方向传播通过柱状构件。 柱状构件沿第三方向延伸。 柱状构件在第二方向上布置有间隙。 第二方向垂直于第三方向。 第一和第三方向之间的角度大于临界角度并且等于或小于90度。

    Method for manufacturing movable portion of semiconductor device
    27.
    发明授权
    Method for manufacturing movable portion of semiconductor device 有权
    制造半导体器件的可移动部分的方法

    公开(公告)号：US07214625B2

    公开(公告)日：2007-05-08

    申请号：US10936539

    申请日：2004-09-09

    申请人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    发明人： Kazushi Asami ,  Junji Oohara ,  Hiroshi Muto ,  Kazuhiko Sugiura ,  Tsuyoshi Fukada ,  Yukihiro Takeuchi

    IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L29/82

    CPC分类号： B81C1/00619 ,  B81C2201/0112

    摘要： A method for manufacturing a semiconductor device having a movable portion includes the steps of: forming a trench on a semiconductor layer so that the trench reaches an insulation layer; and forming a movable portion by etching a sidewall of the trench so that the semiconductor layer is separated from the insulation layer. The steps of forming the trench and forming the movable portion are performed by a reactive ion etching method. The insulation layer disposed on the bottom of the trench is prevented from charging positively in the step of forming the trench. The insulation layer disposed on the bottom of the trench is charged positively in the step of forming the movable portion.

    摘要翻译： 一种制造具有可移动部分的半导体器件的方法包括以下步骤：在半导体层上形成沟槽，使得沟槽到达绝缘层; 以及通过蚀刻沟槽的侧壁形成可动部分，使得半导体层与绝缘层分离。 通过反应离子蚀刻方法进行形成沟槽并形成可动部的步骤。 在形成沟槽的步骤中，防止设置在沟槽底部的绝缘层被正面地充电。 设置在沟槽底部的绝缘层在形成可移动部分的步骤中被正向地充电。

    Capacitance type physical quantity sensor
    28.
    发明授权
    Capacitance type physical quantity sensor 有权
    电容式物理量传感器

    公开(公告)号：US07201053B2

    公开(公告)日：2007-04-10

    申请号：US10834183

    申请日：2004-04-29

    申请人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    发明人： Tetsuo Yoshioka ,  Akihiko Teshigahara ,  Junji Ohara ,  Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Kazuhiko Kano

    IPC分类号： G01P15/125 ,  G01P9/04

    CPC分类号： G01P15/0802 ,  G01P15/125 ,  G01P2015/0814

    摘要： A capacitance type physical quantity sensor detects physical quantity. The sensor includes a movable portion including a movable electrode and a fixed portion including a fixed electrode. The fixed electrode includes a detection surface facing a detection surface of the movable electrode. The movable electrode is movable toward the fixed electrode in accordance with the physical quantity so that a distance between the detection surfaces is changeable. At least one of the movable and the fixed electrodes includes a groove. The groove is disposed on a top or a bottom of the one of the movable and the fixed electrodes, has a predetermined depth from the top or the bottom, and extends from the detection surface to an opposite surface.

    摘要翻译： 电容式物理量传感器检测物理量。 传感器包括可移动部分，其包括可动电极和包括固定电极的固定部分。 固定电极包括面向可动电极的检测面的检测面。 可移动电极可以根据物理量朝向固定电极移动，使得检测表面之间的距离是可变的。 可移动和固定电极中的至少一个包括凹槽。 凹槽设置在可移动和固定电极中的一个的顶部或底部上，具有从顶部或底部的预定深度，并且从检测表面延伸到相对的表面。

    Method of manufacturing semiconductor device capable of sensing dynamic quantity
    29.
    发明授权
    Method of manufacturing semiconductor device capable of sensing dynamic quantity 有权
    能够感测动态量的半导体器件的制造方法

    公开(公告)号：US06753201B2

    公开(公告)日：2004-06-22

    申请号：US10154784

    申请日：2002-05-28

    申请人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    发明人： Hiroshi Muto ,  Tsuyoshi Fukada ,  Kenichi Ao ,  Minekazu Sakai ,  Yukihiro Takeuchi ,  Kazuhiko Kano ,  Junji Oohara

    IPC分类号： H01L2100

    CPC分类号： B81C1/00936 ,  B81B2203/0136 ,  B81C1/0019 ,  B81C1/00531 ,  B81C2201/0132 ,  G01P2015/0814 ,  H01L21/76232 ,  H01L21/76264 ,  H01L21/76283

    摘要： A method of manufacturing a semiconductor device is provided. The device is manufactured with use of an SOI (Silicon On Insulator) substrate having a first silicon layer, an oxide layer, and a second silicon layer laminated in this order. After forming a trench reaching the oxide layer from the second silicon layer, dry etching is performed, thus allowing the oxide layer located at the trench bottom to be charged at first. This charging forces etching ions to impinge upon part of the second silicon layer located laterally to the trench bottom. Such part is removed, forming a movable section. For example, ions to neutralize the electric charges are administered into the trench, so that the electric charges are removed from charged movable electrodes and their charged surrounding regions. Removing the electric charges prevents the movable section to stick to its surrounding portions.

    摘要翻译： 提供一种制造半导体器件的方法。 使用具有按顺序层叠的第一硅层，氧化物层和第二硅层的SOI（绝缘体上硅）基板来制造器件。 在形成从第二硅层到达氧化物层的沟槽之后，进行干蚀刻，从而允许首先将位于沟槽底部的氧化物层充电。 该充电迫使蚀刻离子撞击位于沟槽底部横向的第二硅层的一部分。 去除这样的部件，形成可动部分。 例如，中和电荷的离子被施加到沟槽中，使得电荷从带电的可移动电极及其带电的周围区域中去除。 拆卸电荷可防止可动部分粘附到其周围部分。

    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like
    30.
    发明授权
    Semiconductor physical-quantity sensor having a locos oxide film, for sensing a physical quantity such as acceleration, yaw rate, or the like 失效
    具有氧化皮膜的半导体物理量传感器，用于感测诸如加速度，偏航角速度等的物理量

    公开(公告)号：US6137150A

    公开(公告)日：2000-10-24

    申请号：US540833

    申请日：1995-10-11

    申请人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    发明人： Yukihiro Takeuchi ,  Toshimasa Yamamoto ,  Tadashi Hattori

    IPC分类号： G01L1/14 ,  B81B3/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/12 ,  G01P15/125 ,  G01P15/13 ,  H01L29/84 ,  H01L29/82

    CPC分类号： G01P15/131 ,  G01C19/5719 ,  G01P15/097 ,  G01P15/124 ,  G01P2015/0814

    摘要： The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

    摘要翻译： 本发明提供一种半导体物理量传感器，即使施加到用于振动的固定电极的电压发生变化，也可以进行高精度的测量，而不会发生用于振动的固定电极的变形或位移，并且可以增加电介质 在不改变绝缘牺牲层的厚度的情况下，用于振动使用的固定电极和基板之间的击穿电压或者影响牺牲层蚀刻时间。 根据本发明的半导体物理量传感器在足够厚的绝缘膜上形成电极锚固部分，并且使得与半导体衬底的介电击穿电压增加。 特别地，足够厚的绝缘膜由传感器检测电路制造或扩散电极分离期间形成的LOCOS氧化物膜给出。