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146 条记录 (耗时 0.03 秒)

    Method of manufacturing active matrix panel
    23.
    发明授权
    Method of manufacturing active matrix panel 失效
    有源矩阵面板的制造方法

    公开(公告)号：US5032531A

    公开(公告)日：1991-07-16

    申请号：US376866

    申请日：1989-07-07

    申请人： Ken Tsutsui ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Haruo Matsumaru

    发明人： Ken Tsutsui ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Haruo Matsumaru

    IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

    CPC分类号： G02F1/1368 ,  H01L27/1214 ,  H01L29/66765 ,  G02F1/136213

    摘要： In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.

    摘要翻译： 在有源矩阵液晶面板的第一制造工序中，依次将透明导体膜和金属膜累积在基板上，形成双层膜。 对包含透明导体膜和金属膜的两层膜进行光刻，以至少形成根据预定图案的薄膜晶体管的像素电极（透明导体膜）和栅电极（金属膜） 。 在接近制造结束的制造工艺中，当形成薄膜晶体管的源极和漏极时，同时去除像素电极上的金属膜。 由于保护像素电极的金属膜的去除同时在最终工艺附近实现，因此保护像素电极的保护，从而实现生产过程的屈服和减少的改善。

    Photosensor with diode array
    24.
    发明授权
    Photosensor with diode array 失效
    带二极管阵列的光电传感器

    公开(公告)号：US4495409A

    公开(公告)日：1985-01-22

    申请号：US348669

    申请日：1982-02-16

    申请人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

    发明人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

    IPC分类号： H01L27/146 ,  H04N1/031 ,  H04N1/193 ,  H01J40/14

    CPC分类号： H04N1/031 ,  H01L27/14643 ,  H01L27/14665 ,  H04N1/1931

    摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.

    摘要翻译： 一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中 多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素 并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器， 要读出，用于偏压图像的二极管的电压 同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点 分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

    Photosensor
    25.
    发明授权
    Photosensor 失效
    光电传感器

    公开(公告)号：US4429325A

    公开(公告)日：1984-01-31

    申请号：US206780

    申请日：1980-11-14

    申请人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

    发明人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

    IPC分类号： H01L27/146 ,  H01L31/0264 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14665

    摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.

    摘要翻译： 在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层， 光电转换层。 通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。 暗电流被抑制，光响应良好。 作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

    Method for fabricating a solid-state imaging device using photoconductive film
    26.
    发明授权
    Method for fabricating a solid-state imaging device using photoconductive film 失效
    使用光电导膜制造固态成像装置的方法

    公开(公告)号：US4364973A

    公开(公告)日：1982-12-21

    申请号：US247737

    申请日：1981-03-26

    申请人： Norio Koike ,  Toru Baji ,  Toshihisa Tsukada ,  Hideaki Yamamoto

    发明人： Norio Koike ,  Toru Baji ,  Toshihisa Tsukada ,  Hideaki Yamamoto

    IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/18 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  B05D1/32

    CPC分类号： H01L27/14665

    摘要： A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.

    摘要翻译： 一种使用光电导膜制造固态成像装置的方法，包括通过使用屏蔽板将光电导材料沉积到扫描仪IC上的步骤，所述扫描器IC包括垂直开关MOS晶体管和排列在 形式的矩阵和用于扫描垂直和水平切换MOS晶体管的垂直和水平扫描移位寄存器，所述屏蔽板具有对应于垂直开关MOS晶体管阵列区域的开路部分。

    Solid-state imaging device
    27.
    发明授权
    Solid-state imaging device 失效
    固态成像装置

    公开(公告)号：US4323912A

    公开(公告)日：1982-04-06

    申请号：US152690

    申请日：1980-05-23

    申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

    IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

    CPC分类号： H01L27/14665

    摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

    摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。