公开(公告)号：US5589935A

公开(公告)日：1996-12-31

申请号：US452607

申请日：1995-05-25

申请人： James R. Biard

发明人： James R. Biard

IPC分类号： B08B3/00 ,  D06F39/00 ,  G01N21/53 ,  G01N21/00 ,  D06F33/00

CPC分类号： A47L15/4297 ,  B08B3/00 ,  D06F39/004 ,  G01N21/534

摘要： A turbidity sensor is provided with two light sensitive components or elements. One light sensitive component is displaced from a light source, such as a light emitting diode, so that a fluid can pass therebetween. A second light sensitive component is disposed within a common compartment with the light source so that it can measure the intensity of light provided by the light source. The light source and the second light sensitive components can be individual elements, or chips, within a common component package. A regulator is provided to control the magnitude of current provided to the light source so that its light intensity can be regulated. In this manner, the intensity of light emitted by the light source, such as a light emitting diode, can be controlled regardless of the aging of the LED, the variability of LED characteristics and the temperature surrounding the LED. The constant light emission from the light source permits the other light sensitive component to be used as a reliable indication of the turbidity of a solution passing between the light source and the first light sensitive component.

摘要翻译： 浊度传感器具有两个光敏元件或元件。 一个光敏元件从诸如发光二极管的光源移位，使得流体可以在其间通过。 第二光敏部件设置在具有光源的公共隔间内，使得其可以测量由光源提供的光的强度。 光源和第二光敏部件可以是公共部件封装内的单个元件或芯片。 提供调节器以控制提供给光源的电流的大小，使得其光强度可以被调节。 以这种方式，可以控制由诸如发光二极管的光源发射的光的强度，而不管LED的老化，LED特性的变化以及LED周围的温度。 来自光源的恒定光发射允许另一个光敏部件被用作通过光源和第一光敏部件之间的溶液的浊度的可靠指示。

公开(公告)号：US4545076A

公开(公告)日：1985-10-01

申请号：US397575

申请日：1982-07-12

申请人： James R. Biard ,  Ben R. Elmer

发明人： James R. Biard ,  Ben R. Elmer

IPC分类号： H01L27/08 ,  H04B10/152 ,  H03F3/14

CPC分类号： H04B10/693 ,  H01L27/0802

摘要： A data transmission link including a transmitter for acquiring conducted electrical data and transmitting electromagnetic radiated wave data such as optical data corresponding to the conducted electrical data, a receiver for receiving the electromagnetic radiated wave data and generating conducted electrical data corresponding to the radiated wave data and at least one wave conduit such as fiber optic data transmission cable for transmitting the radiated wave data from the transmitter to the receiver is disclosed. In one arrangement, the transmitter includes a light emitting device which is driven by an output driver responsive to the electrical data accepted by an input gate. In an optical data transmission link, the receiver includes a preamplifier for receiving optical data and generating bipolar electrical signal data corresponding to the optical data, a postamplifier for amplifying the bipolar conducted electrical data generated by the preamplifier, and an output stage for acquiring the amplified bipolar electrical data from the postamplifier and generating single-ended conducted electrical data corresponding to the bipolar electrical data. The optical data transmission link includes a temperature compensated voltage reference circuit to accommodate the use of the link from -55.degree. C. to +150.degree. C. and in the range of power supply voltage from ten percent below the nominal supply voltage to ten percent above the nominal supply voltage. Both logic circuitry and linear circuitry are included on the same chip. Special features and methods lower the noise of the circuit, compensate for temperature variations, and obviate the problem of distributed electrical capacitance to ground to make an electrical element in a monolithic or hybrid circuit act similar to a discrete electrical element.

摘要翻译： 一种数据传输链路，包括：发送器，用于获取传导的电气数据并发送与所传导的电气数据对应的光学数据等电磁辐射数据;接收器，用于接收电磁辐射波数据，并产生对应于辐射波数据的传导电数据， 公开了至少一个波导管，例如用于将辐射波数据从发射机发射到接收机的光纤数据传输电缆。 在一种布置中，发射器包括响应于输入门接受的电数据由输出驱动器驱动的发光器件。 在光数据传输链路中，接收机包括用于接收光数据并产生对应于光数据的双极电信号数据的前置放大器，用于放大由前置放大器产生的双极传导电数据的后置放大器，以及用于获取放大 来自后置放大器的双极电气数据并且产生对应于双极电气数据的单端传导电数据。 光学数据传输链路包括温度补偿电压参考电路，以适应-55℃至+ 150℃的链路的使用，并且在电源电压范围内从标称电源电压的10％到10％ 高于标称电源电压。 逻辑电路和线性电路都包含在同一芯片上。 特征和方法降低了电路的噪声，补偿了温度变化，并且消除了分布式电容对地的问题，使单片或混合电路中的电气元件类似于离散的电气元件。

公开(公告)号：US20100264511A1

公开(公告)日：2010-10-21

申请号：US10486780

申请日：2002-08-12

申请人： Michael J Haji-Sheikh ,  James R. Biard ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J Haji-Sheikh ,  James R. Biard ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： H01L29/06 ,  H01L21/762

CPC分类号： G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

摘要： Disclosed are methods for providing wafer parasitic current control to a semiconductor wafer (1500) having a sub-state (1520), at least one active layer (1565) and a surface layer (1510), and electrical contacts (1515) formed on said surface layer (1510). Current control can be achieved with the formation of trenches (1525) around electrical contacts, where electrical contacts and associated layers define an electronic device. Insulating implants (1530) can be placed into trenches (1525) and/or sacrificial layers (1540) can be formed between electronic contacts (1515). Trenches control current by promoting current flow within active (e.g., conductive) regions (1560) and impeding current flow through inactive (e.g., nonconductive) regions (1550). Methods of and systems for wafer level burn-in (WLBI) of semiconductor devices are also disclosed. Current control at the wafer level is important when using WLBI methods and systems.

摘要翻译： 公开了一种用于向具有子状态（1520），至少一个有源层（1565）和表面层（1510）的半导体晶片（1500）提供晶片寄生电流控制的方法，以及形成在所述 表面层（1510）。 可以通过在电触点周围形成沟槽（1525）来实现电流控制，其中电触点和相关层限定电子装置。 绝缘植入物（1530）可以放置在沟槽（1525）中，并且可以在电子触点（1515）之间形成牺牲层（1540）。 沟槽通过促进在有源（例如，导电）区域（1560）内的电流流动并阻止电流通过非活性（例如非导电）区域（1550）来控制电流。 还公开了半导体器件的晶片级老化（WLBI）的方法和系统。 使用WLBI方法和系统时，晶圆级的电流控制很重要。

公开(公告)号：US07700379B2

公开(公告)日：2010-04-20

申请号：US10486661

申请日：2002-08-12

申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： H01L21/66 ,  G01R31/26

CPC分类号： G01R31/2874 ,  H01S5/0021 ,  H01S5/02461 ,  H01S5/183

摘要： Methods of conducting wafer level burn-in (WLBI) of semiconductor devices are presented wherein systems are provided having at least two electrodes (210, 215). Electrical bias (920) and/or thermal power (925) is applied on each side of a wafer (100) having back and front electrical contacts for semiconductor devices borne by the wafer. A pliable conductive layer (910) is described for supplying pins on the device side of a wafer with electrical contact and/or also for providing protection to the wafer from mechanical pressure being applied to its surfaces. Use of a cooling system (950) is also described for enabling the application of a uniform temperature to a wafer undergoing burn-in. Wafer level burn-in is performed by applying electrical and physical contact (915) using an upper contact plate to individual contacts for the semiconductor devices; applying electrical and physical contact using a lower contact plate (910) to a substrate surface of said semiconductor wafer; providing electrical power (920) to said semiconductor devices through said upper and lower second contact plates from a power source coupled to said upper and lower contacts plates; monitoring and controlling electrical power (935) to said semiconductor devices for a period in accordance with a specified burn-in criteria; removing electrical power at completion of said period (955); and removing electrical and physical contact to said semiconductor wafer (965).

摘要翻译： 提供了进行半导体器件的晶片级老化（WLBI）的方法，其中提供具有至少两个电极（210,215）的系统。 电晶体（920）和/或热功率（925）施加在具有由晶片承载的半导体器件的背面和前部电触头的晶片（100）的每一侧上。 描述了一种柔性导电层（910），用于在具有电接触的晶片的器件侧上提供引脚和/或用于为施加到其表面的机械压力提供对晶片的保护。 还描述了使用冷却系统（950），以使得能够对经历老化的晶片施加均匀的温度。 通过使用上接触板向半导体器件的单个触点施加电和物理接触（915）来执行晶片级老化; 使用下接触板（910）将电和物理接触施加到所述半导体晶片的衬底表面; 通过所述上和下第二接触板从耦合到所述上和下接触板的电源向所述半导体器件提供电力（920）; 根据指定的老化标准对所述半导体器件监测和控制电力（935）一段时间; 在所述期间完成时移除电力（955）; 以及去除与所述半导体晶片（965）的电和物理接触。

公开(公告)号：US07251264B2

公开(公告)日：2007-07-31

申请号：US11119292

申请日：2005-04-29

申请人： Ralph H. Johnson ,  Klein L. Johnson ,  Jimmy A. Tatum ,  James K. Guenter ,  James R. Biard ,  Robert A. Hawthorne, III

发明人： Ralph H. Johnson ,  Klein L. Johnson ,  Jimmy A. Tatum ,  James K. Guenter ,  James R. Biard ,  Robert A. Hawthorne, III

IPC分类号： H01S3/08

CPC分类号： H01S5/423 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3211

摘要： This disclosure concerns devices such as DBRs, one example of which includes at least one first mirror layers having an oxidized region extending from an edge of the DBR to an oxide termination edge that is situated greater than a first distance from the edge of the DBR. The DBR also includes at least one second mirror layer having an oxidized region extending from the edge of the DBR to an oxide termination edge that is situated less than a second distance from the edge of the DBR, such that the first distance is greater than the second distance. Additionally, a first mirror layer includes an oxidizable material at a concentration that is higher than the concentration of the oxidizable material in any of the second mirror layers. Finally, a first mirror layer is doped with an impurity at a higher level than one of the second mirror layers.

摘要翻译： 本公开涉及诸如DBR的设备，其一个示例包括至少一个第一镜像层，其具有从DBR的边缘延伸到距离DBR的边缘大于第一距离的氧化物终止边缘的氧化区域。 DBR还包括至少一个第二镜层，其具有从DBR的边缘延伸到氧化物终止边缘的氧化区域，该氧化物终止边缘距离DBR的边缘小于第二距离，使得第一距离大于 第二距离。 此外，第一镜层包括浓度高于任何第二镜层中的可氧化材料的浓度的可氧化材料。 最后，第一镜层掺杂有比第二镜层中的一个更高的杂质。

公开(公告)号：US07190184B2

公开(公告)日：2007-03-13

申请号：US10486672

申请日：2002-08-12

申请人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

发明人： Michael J. Haji-Sheikh ,  James R. Biard ,  Simon Rabinovich ,  James K. Guenter ,  Bobby M. Hawkins

IPC分类号： G01R31/02

CPC分类号： G01R31/275 ,  G01R31/2831 ,  G01R31/2863 ,  G01R31/2872 ,  G01R31/2874 ,  G01R31/2884 ,  H01S5/0021 ,  H01S5/005 ,  H01S5/423

摘要： In one example, a wafer level burn-in system includes a first electrode plate for providing electrical contact simultaneously to contacts of a group of semiconductor devices borne by a semiconductor wafer on a device surface of the semiconductor wafer. A second electrode plate is employed for providing electrical contact to a substrate surface of the semiconductor wafer. Finally, an electrical power generator is employed for providing electrical power to the group of semiconductor devices through the contacts and the substrate of the semiconductor wafer through the first and second electrode plates.

摘要翻译： 在一个示例中，晶片级老化系统包括第一电极板，用于同时向半导体晶片的器件表面上由半导体晶片承载的一组半导体器件的触点提供电接触。 使用第二电极板来提供与半导体晶片的衬底表面的电接触。 最后，采用电力发生器通过第一和第二电极板通过触点和半导体晶片的衬底向半导体器件组提供电力。

公开(公告)号：US07184455B2

公开(公告)日：2007-02-27

申请号：US11026385

申请日：2004-12-30

申请人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

发明人： James K. Guenter ,  Jimmy A. Tatum ,  James R. Biard

IPC分类号： H01S5/00

CPC分类号： H01S5/0264 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/1835 ,  H01S5/18358 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/3095 ,  H01S2301/02

摘要： An optical structure that reduces the effects of spontaneous emissions from the active region of a laser. An optical structure includes optimizations to reduce the effects of spontaneous emissions. The optical structure includes a VCSEL with top and bottom DBR mirrors and an active region connected to the mirrors. The optical structure further includes a photodiode connected to the VCSEL. One or more optimizations may be included in the optical structure including optically absorbing materials, varying the geometry of the structure to change reflective angles, using optical apertures, changing the reflectivity of one or more mirrors, changing the photodiode to be more impervious to spontaneous emissions, and using ion implants to reduce photoluminescence efficiency.

摘要翻译： 一种光学结构，其减少了来自激光器的有源区域的自发辐射的影响。 光学结构包括优化以减少自发辐射的影响。 光学结构包括具有顶部和底部DBR反射镜的VCSEL和连接到反射镜的有源区域。 光学结构还包括连接到VCSEL的光电二极管。 可以在光学结构中包括一个或多个优化，包括光学吸收材料，改变结构的几何形状以改变反射角度，使用光学孔径，改变一个或多个反射镜的反射率，将光电二极管改变为更多地不自发发射 ，并使用离子注入来降低光致发光效率。

公开(公告)号：US07095771B2

公开(公告)日：2006-08-22

申请号：US10922028

申请日：2004-08-19

申请人： James R. Biard ,  James K. Guenter

发明人： James R. Biard ,  James K. Guenter

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/18313 ,  H01S5/18327 ,  H01S5/18358 ,  H01S5/2063

摘要： Optical transmitters are disclosed, one example of which includes a vertical cavity surface emitting laser that includes a substrate upon which a lower mirror is disposed. In this example, a spacer is disposed between the lower mirror and an active region. Another spacer separates the active region and an upper mirror. The upper mirror includes an oxide insulating region that is damaged by ion implantation so that desirable effects are achieved with respect to lateral sheet resistance, and quantum well recombination centers in the active region.

摘要翻译： 公开了光发射器，其一个示例包括垂直腔表面发射激光器，其包括其上设置有下反射镜的衬底。 在该示例中，间隔件设置在下反射镜和有源区域之间。 另一个隔离物分离有源区域和上反射镜。 上反射镜包括通过离子注入而损坏的氧化物绝缘区域，从而在有源区域中获得关于侧向薄层电阻和量子阱复合中心的期望效果。

公开(公告)号：US07031363B2

公开(公告)日：2006-04-18

申请号：US10697660

申请日：2003-10-29

申请人： James R. Biard ,  Klein L. Johnson ,  Ralph H. Johnson ,  Gyoungwon Park ,  Tzu-Yu Wang

发明人： James R. Biard ,  Klein L. Johnson ,  Ralph H. Johnson ,  Gyoungwon Park ,  Tzu-Yu Wang

IPC分类号： H01S5/00

CPC分类号： H01S5/18308 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18363 ,  H01S5/18366 ,  H01S2301/176 ,  H01S2304/00

摘要： A process for making a laser structure. The process is for the fabrication of a laser device such a vertical cavity surface emitting laser (VCSEL). The structures made involve dielectric and spin-on material planarization over wide and narrow trenches, coplanar contacts, non-coplanar contacts, thick and thin pad dielectric, air bridges and wafer thinning.

摘要翻译： 制造激光结构的方法。 该方法用于制造诸如垂直腔表面发射激光器（VCSEL）的激光器件。 所制造的结构涉及宽和窄沟槽，共面触点，非共面触点，厚和薄的电介质，空气桥和晶片变薄的介电和旋涂材料平面化。

公开(公告)号：US06990135B2

公开(公告)日：2006-01-24

申请号：US10283381

申请日：2002-10-28

申请人： Ralph H. Johnson ,  Klein L. Johnson ,  Jimmy A. Tatum ,  James K. Guenter ,  James R. Biard ,  Robert A. Hawthorne, III

发明人： Ralph H. Johnson ,  Klein L. Johnson ,  Jimmy A. Tatum ,  James K. Guenter ,  James R. Biard ,  Robert A. Hawthorne, III

IPC分类号： H01S5/00

CPC分类号： H01S5/423 ,  H01S5/18308 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/2063 ,  H01S5/3054 ,  H01S5/3211

摘要： An oxide-confined VCSELs having a distributed Bragg reflector with a heavily doped high Al content oxide aperture forming layer disposed between a low Al content first layer and a medium Al content second layer. Between the first layer and the oxide aperture forming layer there may be a thin transition region wherein the Al content changes from a higher Al content to a lower Al content. In some embodiments, the Al concentration from the oxide aperture forming layer to the second layer may occur in a step. The oxide aperture forming layer may be disposed at or near a null or a node of the electric field produced by resonant laser light. During the oxidization of the oxide aperture forming layer, all or some of the other aluminum bearing DBR layers may also become oxidized, but to a substantially lesser degree. The junction between the oxidized portion and un-oxidized portion of these layers is believed to reduce the stability and/or reliability of the device. To alleviate this, the present invention contemplates providing an implant, etch or other suitable process to reduce or eliminate one or more electrical artifacts associated with the junction between the oxidized portion and un-oxidized portion of these layers as well as reducing the oxidation of other aluminum bearing layers of the DBR.

摘要翻译： 具有分布布拉格反射器的氧化物限制性VCSEL，其具有设置在低Al含量第一层和介质Al含量第二层之间的重掺杂高Al含量氧化物孔形成层。 在第一层和氧化物孔形成层之间可能存在其中Al含量从较高Al含量变为较低Al含量的薄过渡区。 在一些实施方案中，从氧化物孔形成层到第二层的Al浓度可以在一个步骤中发生。 氧化物孔形成层可以设置在由共振激光产生的电场的零点或节点附近或附近。 在氧化物孔形成层的氧化过程中，其它所有的一部分的含铝DBR层也可能被氧化，但是其程度基本较小。 认为这些层的氧化部分和未氧化部分之间的连接点降低了装置的稳定性和/或可靠性。 为了减轻这一点，本发明设想提供一种植入物，蚀刻或其它合适的方法，以减少或消除与这些层的氧化部分和未氧化部分之间的接合相关联的一个或多个电赝象以及减少其它的氧化部分 铝合金轴承层的DBR。