Abstract:
A magnetic resistance element is provided that includes an upper magnetic layer, which is formed in contact with an anti-ferromagnetic layer, and at least two magnetic layers that are layered with tunnel barrier wall layers respectively inserted between the first magnetic layer and each of the at least two magnetic layers such that the magnetic resistance element has a combined resistance that corresponds to one of four predefined magnetic resistances and that can be changed to another of the four predefined magnetic resistances by applying a predefined recording magnetic field pattern to the magnetic resistance element.
Abstract:
A method of fabricating a compound semiconductor device is disclosed. The method includes forming a compound semiconductor substrate, depositing an insulator film on that substrate, then depositing a second film containing a refractory metal on the insulator film. The method further includes annealing the substrate-insulator film-refractory metal containing film composite in an inert gas atmosphere excluding a toxic substance.
Abstract:
The printing head for a wire-type dot printer includes a plurality of electromagnet coils, each on a coil core including a central post, said coil core and central post being of a magnetic material. Each of the coil cores is mounted on a frame having a cap for holding an operating plate which rotates around a fulcrum proximate the periphery of the printing head. The printing head is of reduced size and weight and is low in cost to manufacture.
Abstract:
An electromagnetic wave suppression material that has a high light transmission performance even under a low temperature environment to display a sufficient electromagnetic wave suppression effect, and an electromagnetic wave suppression sheet that has the electromagnetic wave suppression material sealed in it, are disclosed. An electromagnetic wave suppression sheet (3) is composed of an electromagnetic wave suppression material (1) charged into a moisture-resistant film (2) whose peripheral part is laminated by a predetermined adhesive by way of sealing.
Abstract:
Provided is an antenna module including: an antenna coil having a first pattern width; a magnetic sheet, which includes a first surface on which the antenna coil is to be arranged, and has a first distance being a distance on the first surface between an edge of the first surface and the antenna coil, the first distance being twice or more as large as the first pattern width; and a conductor, which includes a second surface on which the magnetic sheet is to be arranged while a surface opposite to the first surface of the magnetic sheet faces the second surface, and has a second distance being a distance on the second surface between an edge of the second surface and the antenna coil, the second distance being equal to or larger than the first distance.
Abstract:
In a battery pack including a battery case containing therein a battery cell, a wiring circuit board, and a liquid-absorbing element capable of absorbing the electrolyte leaking out from the battery cell, the liquid-absorbing element is inserted with looseness allowing for expansion in a gap formed by a retaining element on the inner wall surface of the battery case or retaining element on the wiring circuit board. Alternatively, a liquid-absorbing element consisting of a non-absorbent porous retaining element partially holding a liquid absorbent is used and the porous retaining element is fixed to the inner wall surface of the battery case or the wiring circuit board at an absorbent-free zone.
Abstract:
A semiconductor device has a Group III nitride semiconductor layer and a gate electrode formed on the Group III nitride semiconductor layer. The gate electrode contains an adhesion enhancing element. A thermally oxidized insulating film is interposed between the Group III nitride semiconductor layer and the gate electrode.
Abstract:
An active region formed of a Group III nitride semiconductor is formed on a substrate. Then, an electrode is formed on the active region and a protective insulating film is formed on a part of the active region located in the peripheral portion of the electrode by oxidizing the Group III nitride semiconductor.
Abstract:
An image forming apparatus and an image forming method. The image forming apparatus includes a scanner mechanism for reading out image data from an original document, and a printer mechanism for printing an image based on the image data. The printer mechanism includes a first memory for writing in the image data in synchronization with a predetermined first clock signal, a first image processor for processing the image data in synchronization with a second clock signal, a second memory for writing in the image data in synchronization with the second clock signal, a second image processor for processing the image data in synchronization with a third clock signal, and a light controller for generating a light control signal from the image data in synchronization with the third clock signal.
Abstract:
A semiconductor device has an active region composed of a group III–V nitride semiconductor and ohmic electrodes and a gate electrode each formed on the active region. The active region has an entire surface thereof exposed to a plasma such that a surface potential for electrons therein is lower than in the case where the entire surface is not exposed to the plasma.