公开(公告)号：US07616313B2

公开(公告)日：2009-11-10

申请号：US11525320

申请日：2006-09-21

Applicant: Daniel Kandel ,  Walter D. Mieher ,  Boris Golovanevsky

Inventor： Daniel Kandel ,  Walter D. Mieher ,  Boris Golovanevsky

IPC: G01B11/00

CPC classification number: G03F7/70633

Abstract: Embodiments of the invention include a scatterometry target for use in determining the alignment between substrate layers. A target arrangement is formed on a substrate and comprises a plurality of target cells. Each cell has two layers of periodic features constructed such that an upper layer is arranged above a lower layer and configured so that the periodic features of the upper layer have an offset and/or different pitch than periodic features of the lower layer. The pitches are arranged to generate a periodic signal when the target is exposed to an illumination source. The target also includes disambiguation features arranged between the cells and configured to resolve ambiguities caused by the periodic signals generated by the cells when exposed to the illumination source.

Abstract translation: 本发明的实施例包括用于确定衬底层之间的对准的散射仪。 目标装置形成在基板上并且包括多个目标单元。 每个单元具有两层周期性特征，其被构造为使得上层布置在下层上方并且被配置为使得上层的周期特征具有与下层的周期特征相比偏移和/或不同的间距。 当目标暴露于照明源时，间距被布置成产生周期性信号。 目标还包括布置在单元之间的消歧特征，并被配置为解决由暴露于照明源时由单元产生的周期性信号引起的模糊。

公开(公告)号：US07609373B2

公开(公告)日：2009-10-27

申请号：US11223851

申请日：2005-09-09

Applicant: Yung-Ho Chuang ,  J. Joseph Armstrong

Inventor： Yung-Ho Chuang ,  J. Joseph Armstrong

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01B11/0625 ,  G01N21/21 ,  G01N21/95607 ,  G01N2021/8809

Abstract: A system and method for inspecting a multi-layer sample, such as a silicon wafer, is disclosed. The design reduces variations in total reflected energy due to thin film interference. The design includes illuminating the sample at two incident angle ranges, where the two incident angle ranges are such that variation in total reflected energy at a first incident angle range may be employed to balance variation in total reflected energy at a second incident angle range. Defects are detected using die-to-die subtraction of the sample illuminated at the two incident angle ranges.

Abstract translation: 公开了一种用于检查诸如硅晶片的多层样品的系统和方法。 该设计减少了由于薄膜干扰导致的总反射能量的变化。 该设计包括以两个入射角度范围照射样品，其中两个入射角范围使得可以采用在第一入射角范围的总反射能量的变化来平衡在第二入射角范围内的总反射能量的变化。 使用在两个入射角度范围照射的样品的模 - 阴相减去检测缺陷。

公开(公告)号：US07607647B2

公开(公告)日：2009-10-27

申请号：US11688720

申请日：2007-03-20

Applicant: Guoheng Zhao ,  Alexander Belyaev ,  Christian H. Wolters ,  Paul Andrew Doyle ,  Howard W. Dando ,  Mehdi Vaez-Iravani

Inventor： Guoheng Zhao ,  Alexander Belyaev ,  Christian H. Wolters ,  Paul Andrew Doyle ,  Howard W. Dando ,  Mehdi Vaez-Iravani

IPC: B25B11/00

CPC classification number: B25B11/005 ,  F16C29/025 ,  F16C32/0603 ,  H01L21/67784 ,  H01L21/6838

Abstract: Substrate processing method and apparatus are disclosed. The substrate processing apparatus includes a non-contact air bearing chuck with a vacuum preload.

Abstract translation: 公开了基板处理方法和装置。 基板处理装置包括具有真空预载的非接触式空气轴承卡盘。

公开(公告)号：US07604906B1

公开(公告)日：2009-10-20

申请号：US11231550

申请日：2005-09-21

Applicant: William Volk ,  Ben Eynon ,  Brian Grenon

Inventor： William Volk ,  Ben Eynon ,  Brian Grenon

IPC: G03F1/00

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002

Abstract: Photolithography masks, systems and methods and more particularly to photolithography masks systems and methods for making and using silicon dioxide mask substrates are disclosed. The mask generally includes a silicon-dioxide mask substrate having a front surface, a patterned layer disposed on the front surface, and a coating of a fluoride of an element of group IIA that covers the patterned layer. The coating reduces undesired crystal growth on the silicon dioxide mask substrate. Such masks can be incorporated into photolithography systems and used in photolithography methods wherein a layer of photoresist is formed on a substrate and to radiation that impinges on the mask. Such a mask can be fabricated, e.g., by forming a patterned layer on a front surface of a silicon dioxide mask substrate and covering the patterned layer with a coating of a fluoride of an element of group IIA.

Abstract translation: 公开了光刻掩模，系统和方法，更具体地涉及用于制造和使用二氧化硅掩模基板的光刻掩模系统和方法。 掩模通常包括具有前表面的二氧化硅掩模基底，设置在前表面上的图案化层和覆盖图案化层的IIA族元素的氟化物涂层。 涂层减少二氧化硅掩模基底上的不希望的晶体生长。 这样的掩模可以结合到光刻系统中并且用于光刻法中，其中光致抗蚀剂层形成在基底上并且辐射照射在掩模上。 这样的掩模可以例如通过在二氧化硅掩模基板的前表面上形成图案化层并且用IIA族元素的氟化物的涂层覆盖图案化层来制造。

公开(公告)号：US20090224413A1

公开(公告)日：2009-09-10

申请号：US12410317

申请日：2009-03-24

Applicant: Mark Ghinovker

Inventor： Mark Ghinovker

IPC: H01L23/544

CPC classification number: G01B11/272 ,  G01N21/4785 ,  G01N21/9501 ,  G03F7/70633 ,  H01L21/68 ,  H01L21/682 ,  H01L23/544 ,  Y10S438/975

Abstract: Disclosed are overlay targets having flexible symmetry characteristics and metrology techniques for measuring the overlay error between two or more successive layers of such targets. In one embodiment, a target includes structures for measuring overlay error (or a shift) in both the x and y direction, wherein the x structures have a different center of symmetry (COS) than the y structures. In another embodiment, one of the x and y structures is invariant with a 180° rotation and the other one of the x and y structures has a mirror symmetry. In one aspect, the x and y structures together are variant with a 180° rotation. In yet another example, a target for measuring overlay in the x and/or y direction includes structures on a first layer having a 180 symmetry and structures on a second layer having mirror symmetry. In another embodiment, a target for determining overlay in the x and/or y direction includes structures on a first layer and structures on a second layer, wherein the structures on the first layer have a COS that is offset by a known amount from the COS of the structures on the second layer. In a specific implementation, any of the disclosed target embodiments may take the form of device structures. In a use case, device structures that have an inherent 180° rotational symmetry or a mirror symmetry in each of the first and second layers are used to measure overlay in a first layer and a second layer. Techniques for imaging targets with flexible symmetry characteristics and analyzing the acquired images to determine overlay or alignment error are disclosed.

公开(公告)号：US07578650B2

公开(公告)日：2009-08-25

申请号：US10910110

申请日：2004-07-29

Applicant: Martin P. Aalund ,  Ami Appelbaum

Inventor： Martin P. Aalund ,  Ami Appelbaum

IPC: H01L21/677

CPC classification number: H01L21/67775

Abstract: Apparatus and method for reducing the load on an automated material handling system during processing of materials are disclosed. A materials processing tool with one or more load ports is equipped with at least one movable buffer attached to the tool front end. The buffer is configured to receive a materials pod from the automated material handling system at a storage location and move the pod to one or more of the one or more of the load ports and/or receive a pod from one or more of the one or more load ports and move the pod to the storage location. Any pod in the buffer is accessible either manually or by the material handling system.

Abstract translation: 公开了用于在材料处理期间减少自动化材料处理系统的负载的装置和方法。 具有一个或多个装载端口的材料处理工具配备有至少一个附接到工具前端的可移动缓冲器。 缓冲器被配置为从存储位置处的自动化材料处理系统接收材料盒，并且将盒移动到一个或多个装载端口中的一个或多个并且/或从一个或多个负载端口接收盒 更多的负载端口，并将pod移动到存储位置。 缓冲区中的任何pod可以手动访问或通过物料搬运系统访问。

公开(公告)号：US07576317B1

公开(公告)日：2009-08-18

申请号：US12116890

申请日：2008-05-07

Applicant: Marco Tortonese ,  Mehran Nasser-Ghodsi

Inventor： Marco Tortonese ,  Mehran Nasser-Ghodsi

IPC: G01N21/84

CPC classification number: H01J40/14

Abstract: Calibration of measurements of features made with a system having a micromachining tool and an analytical tool is disclosed. The measurements can be calibrated with a standard having a calibrated feature with one or more known dimensions. The standard may have one or more layers including a single crystal layer. The calibrated feature may include one or more vertical features characterized by one or more known dimensions and formed through the single crystal layer. A trench is formed in a sample with the micromachining tool to reveal a sample feature. The analytical tool measures one or more dimensions of the sample feature corresponding to one or more known dimensions of the calibrated feature. The known dimensions of the calibrated feature are measured with the same analytical tool. The measured dimensions of the sample feature and the calibrated feature can then be compared to the known dimensions of the calibrated feature.

Abstract translation: 公开了使用具有微加工工具和分析工具的系统进行的特征的测量的校准。 测量可以用具有一个或多个已知尺寸的校准特征的标准进行校准。 标准可以具有包括单晶层的一层或多层。 经校准的特征可以包括由一个或多个已知尺寸表征并且通过单晶层形成的一个或多个垂直特征。 在微加工工具的样品中形成沟槽以露出样品特征。 分析工具测量与校准特征的一个或多个已知尺寸对应的样本特征的一个或多个维度。 使用相同的分析工具测量校准特征的已知尺寸。 然后将样本特征和校准特征的测量尺寸与已校准特征的已知尺寸进行比较。

公开(公告)号：US20090135416A1

公开(公告)日：2009-05-28

申请号：US11868740

申请日：2007-10-08

Applicant: Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

Inventor： Andrei V. Shchegrov ,  Anatoly Fabrikant ,  Mehrdad Nikoonahad ,  Ady Levy ,  Daniel C. Wack ,  Noah Bareket ,  Walter Mieher ,  Ted Dziura

IPC: G01B11/28 ,  G01J3/00 ,  G01B11/00

CPC classification number: G03F7/70616 ,  G01N21/211 ,  G01N21/47 ,  G01N21/4788 ,  G01N21/9501 ,  G01N21/956 ,  G01N21/95607 ,  G01N2021/213 ,  G03F7/70625 ,  G03F7/70641

Abstract: A gallery of seed profiles is constructed and the initial parameter values associated with the profiles are selected using manufacturing process knowledge of semiconductor devices. Manufacturing process knowledge may also be used to select the best seed profile and the best set of initial parameter values as the starting point of an optimization process whereby data associated with parameter values of the profile predicted by a model is compared to measured data in order to arrive at values of the parameters. Film layers over or under the periodic structure may also be taken into account. Different radiation parameters such as the reflectivities Rs, Rp and ellipsometric parameters may be used in measuring the diffracting structures and the associated films. Some of the radiation parameters may be more sensitive to a change in the parameter value of the profile or of the films then other radiation parameters. One or more radiation parameters that are more sensitive to such changes may be selected in the above-described optimization process to arrive at a more accurate measurement. The above-described techniques may be supplied to a track/stepper and etcher to control the lithographic and etching processes in order to compensate for any errors in the profile parameters.

Abstract translation: 构建种子轮廓的画廊，并且使用半导体器件的制造工艺知识来选择与轮廓相关联的初始参数值。 也可以使用制造过程知识来选择最佳种子轮廓和最佳初始参数值集合作为优化过程的起始点，由此将与模型预测的轮廓的参数值相关联的数据与测量数据进行比较，以便 达到参数的值。 也可以考虑在周期性结构之上或之下的膜层。 可以使用诸如反射率Rs，Rp和椭偏参数的不同辐射参数来测量衍射结构和相关膜。 一些辐射参数可能对轮廓或膜的参数值的变化对其他辐射参数更敏感。 可以在上述优化过程中选择对这种变化更敏感的一个或多个辐射参数，以获得更准确的测量。 可以将上述技术提供给轨道/步进器和蚀刻器以控制光刻和蚀刻工艺，以便补偿轮廓参数中的任何误差。

公开(公告)号：US07535563B1

公开(公告)日：2009-05-19

申请号：US11464567

申请日：2006-08-15

Applicant: Grace Hsiu-Ling Chen ,  Tao-Yi Fu ,  Jamie Sullivan ,  Shing Lee ,  Greg Kirk

Inventor： Grace Hsiu-Ling Chen ,  Tao-Yi Fu ,  Jamie Sullivan ,  Shing Lee ,  Greg Kirk

IPC: G01N21/00

CPC classification number: G01N21/4788 ,  G01N21/9501 ,  G01N21/95623 ,  G02B26/0841

Abstract: Systems configured to inspect a specimen are provided. One system includes an illumination subsystem configured to illuminate a two-dimensional field of view on the specimen. The system also includes a collection subsystem configured to collect light scattered from the specimen. In addition, the system includes an array of micro-mirrors configured to reflect a two-dimensional pattern of light diffracted from periodic structures on the specimen out of the optical path of the system without reflecting light across an entire dimension of the array out of the optical path. The system further includes a detection subsystem configured to generate output responsive to light reflected by the array into the optical path. The output can be used to detect defects on the specimen. In one embodiment, the system includes an optical element configured to increase the uniformity of the wavefront of the light reflected by the array into the optical path.

Abstract translation: 提供了配置为检查样本的系统。 一个系统包括被配置为照亮样本上的二维视场的照明子系统。 该系统还包括收集子系统，其被配置为收集从样本散射的光。 另外，该系统包括微镜阵列，微阵列阵列被配置成将来自系统的光路上的样品上的周期性结构衍射的光的二维图案反射出来，而不会反射穿过该阵列的整个尺寸的光 光路。 该系统还包括检测子系统，该检测子系统被配置为响应于由阵列反射到光路中的光产生输出。 输出可用于检测样品上的缺陷。 在一个实施例中，该系统包括被配置为增加由阵列反射到光路中的光的波前的均匀性的光学元件。

公开(公告)号：US07528943B2

公开(公告)日：2009-05-05

申请号：US11318715

申请日：2005-12-27

Applicant: David L. Brown ,  Yung-Ho Chuang

Inventor： David L. Brown ,  Yung-Ho Chuang

IPC: G01N21/00

CPC classification number: G01N21/95607

Abstract: A method and apparatus for simultaneous high-speed inspection and acquisition of multiple data channels is provided. The method and apparatus enables inspecting semiconductor wafers and reticles and comprises converting a single image region into two image sections, reorienting one image into a transposed configuration enabling simultaneous scanning of two inspected object locations with a single sensor, and controlling acquisition parameters for a second image by using information collected from a first image in a feedback arrangement. The design provides a dual-linear or time-delay-integration sensor operating in a split readout configuration mode to simultaneously provide data from two regions of the sensor using two sets of readout circuitry.

Abstract translation: 提供了用于同时高速检查和获取多个数据信道的方法和装置。 该方法和装置能够检测半导体晶片和标线，并且包括将单个图像区域转换成两个图像部分，将一个图像重新定向为转置配置，使得能够利用单个传感器同时扫描两个检查对象位置，并且控制第二图像的获取参数 通过使用从反馈安排中的第一图像收集的信息。 该设计提供了以分离读出配置模式工作的双线性或时间延迟积分传感器，以使用两组读出电路同时从传感器的两个区域提供数据。