公开(公告)号：US20050161753A1

公开(公告)日：2005-07-28

申请号：US11052302

申请日：2005-02-08

Applicant: Michael Huff ,  Mehmet Ozgur

Inventor： Michael Huff ,  Mehmet Ozgur

IPC: H01H59/00 ,  H01P1/12 ,  H01P1/18 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/00 ,  H01Q21/00 ,  H05K1/03 ,  H05K1/16 ,  H03L7/00 ,  H01L21/00 ,  H01L21/30 ,  H01L21/46 ,  H01L23/02 ,  H01L27/14 ,  H01L31/00

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (“MEMS”) and low-temperature co-fired ceramic (“LTCC”) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract translation: 使用微机电开关（“MEMS”）和低温共烧陶瓷（“LTCC”）技术的相控阵天线系统和其他类型的射频（RF）装置和系统以及制造这种相控阵天线的方法 系统和其他类型的射频（RF）设备。 每个天线或其他类型的装置包括至少两个多层陶瓷模块和在其中一个模块上制造的MEMS装置。 一旦完成了MEMS器件的制造，就将两个陶瓷模块结合在一起，密封MEMS器件，并允许所有器件层之间的电连接。 底部陶瓷模块在背面还具有用于安装集成电路的空腔。 内部层使用标准LTCC制造和低损耗介电LTCC带材料中可用的导电，电阻和高k电介质浆料形成。

公开(公告)号：US20050088261A1

公开(公告)日：2005-04-28

申请号：US10692548

申请日：2003-10-24

Applicant: Lianjun Liu ,  Steven Smith

Inventor： Lianjun Liu ,  Steven Smith

IPC: B81B3/00 ,  H01H51/22

CPC classification number: B81C1/00142 ,  B81B2201/016

Abstract: A method of making a micromechanical device including forming a dielectric layer over a sacrificial layer, wherein the dielectric layer includes silicon, oxygen and nitrogen. In on embodiment, the dielectric layer is silicon oxynitride formed using plasma enhanced chemical vapor deposition (PECVD). Silicon oxynitride can easily be formed as a low stress material, unlike silicon dioxide, and does not have a large charge trap density like silicon nitride.

Abstract translation: 一种制造微机械装置的方法，包括在牺牲层上形成电介质层，其中介电层包括硅，氧和氮。 在实施例中，电介质层是使用等离子体增强化学气相沉积（PECVD）形成的氮氧化硅。 氮氧化硅可以容易地形成为低应力材料，与二氧化硅不同，并且不具有诸如氮化硅的大的电荷陷阱密度。

公开(公告)号：US20030062961A1

公开(公告)日：2003-04-03

申请号：US09967732

申请日：2001-09-28

Inventor： Qing Ma ,  Peng Cheng

IPC: H03B005/18

CPC classification number: B81B3/0078 ,  B81B2201/016 ,  B81B2203/019 ,  H03H3/0077 ,  H03H9/2463

Abstract: A micro-electromechanical (MEM) resonator is described that includes a substrate, a microbridge beam structure coupled to the substrate and at least one electrode disposed adjacent to the microbridge beam structure to induce vibration of the beam. The microbridge beam structure includes support sections and a beam formed between the support sections. The center region of the beam has a mass that is less than the mass of regions of the beam adjacent to the support sections.

公开(公告)号：US20030020173A1

公开(公告)日：2003-01-30

申请号：US10147907

申请日：2002-05-20

Inventor： Michael A. Huff ,  Mehmet Ozgur

IPC: H01L023/52

CPC classification number: B82Y30/00 ,  B81B7/0064 ,  B81B2201/016 ,  B81B2207/015 ,  B81B2207/092 ,  B81B2207/095 ,  B81B2207/096 ,  B81C2203/0118 ,  B81C2203/035 ,  H01G5/16 ,  H01G5/18 ,  H01G5/40 ,  H01H59/0009 ,  H01H2057/006 ,  H01H2059/0072 ,  H01L2224/16225 ,  H01L2924/15153 ,  H01P1/127 ,  H01P1/184 ,  H01Q1/38 ,  H01Q3/26 ,  H01Q15/0013 ,  H01Q15/004 ,  H01Q21/0087 ,  H05K1/0306 ,  H05K1/16

Abstract: A phased-array antenna system and other types of radio frequency (RF) devices and systems using microelectromechanical switches (nullMEMSnull) and low-temperature co-fired ceramic (nullLTCCnull) technology and a method of fabricating such phased-array antenna system and other types of radio frequency (RF) devices are disclosed. Each antenna or other type of device includes at least two multilayer ceramic modules and a MEMS device fabricated on one of the modules. Once fabrication of the MEMS device is completed, the two ceramic modules are bonded together, hermetically sealing the MEMS device, as well as allowing electrical connections between all device layers. The bottom ceramic module has also cavities at the backside for mounting integrated circuits. The internal layers are formed using conducting, resistive and high-k dielectric pastes available in standard LTCC fabrication and low-loss dielectric LTCC tape materials.

Abstract translation: 使用微机电开关（“MEMS”）和低温共烧陶瓷（“LTCC”）技术的相控阵天线系统和其他类型的射频（RF）装置和系统以及制造这种相控阵天线的方法 系统和其他类型的射频（RF）设备。 每个天线或其他类型的装置包括至少两个多层陶瓷模块和在其中一个模块上制造的MEMS装置。 一旦完成了MEMS器件的制造，就将两个陶瓷模块结合在一起，密封MEMS器件，并允许所有器件层之间的电连接。 底部陶瓷模块在背面还具有用于安装集成电路的空腔。 内部层使用标准LTCC制造和低损耗介电LTCC带材料中可用的导电，电阻和高k电介质浆料形成。

公开(公告)号：US20180315571A1

公开(公告)日：2018-11-01

申请号：US15770705

申请日：2016-11-15

Applicant: CAVENDISH KINETICS, INC.

Inventor： Robertus Petrus VAN KAMPEN ,  Richard L. KNIPE ,  Mickael RENAULT ,  Shibajyoti Ghosh DASTIDER ,  Jacques Marcel MUYANGO

IPC: H01H59/00 ,  H01G5/16 ,  B81B3/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B3/0035 ,  B81B2201/016 ,  H01G5/16 ,  H01H2059/0018 ,  H01H2059/0072

Abstract: A MEMS switch contains an RF electrode 102, pull-down electrodes 104 and anchor electrodes 108 located on a substrate 101. A plurality of islands 226 are provided in the pull-down electrode and electrically isolated therefrom. On top of the RF electrode is the RF contact 206 to which the MEMS-bridge 212, 214 forms an ohmic contact in the pulled-down state. The pull-down electrodes 104 are covered with a dielectric layer 202 to avoid a short-circuit between the bridge and the pull-down electrode. Contact stoppers 224 are disposed on the dielectric layer 202 at locations corresponding to the islands 226, and the resulting gap between the bridge and the dielectric layer in the pulled-down state reduces dielectric charging. In alternative embodiments, the contact stoppers are provide within the dielectric layer 202 or disposed on the islands themselves and under the dielectric layer. The switch provides good controllability of the contact resistance of MEMS switches over a wide voltage operating range.

公开(公告)号：US20180012972A1

公开(公告)日：2018-01-11

申请号：US15695440

申请日：2017-09-05

Applicant: Purdue Research Foundation

Inventor： Muhammad Ashraful Alam ,  Muhammad Masuduzzaman ,  Ankit Jain

IPC: H01L29/51 ,  H01G7/06 ,  H01G4/38 ,  H01G5/40 ,  H01L27/08 ,  B81B7/02 ,  H01L29/78 ,  H01G5/16 ,  H01L49/02

CPC classification number: H01L29/515 ,  B81B7/02 ,  B81B2201/014 ,  B81B2201/016 ,  B81B2201/07 ,  H01G4/38 ,  H01G5/16 ,  H01G5/40 ,  H01G7/06 ,  H01L27/0805 ,  H01L27/11502 ,  H01L27/11585 ,  H01L29/516 ,  H01L29/7842

Abstract: An electrical circuit comprising at least two negative capacitance insulators connected in series, one of the two negative capacitance insulators is biased to generate a negative capacitance. One of the negative capacitance insulators may include an air-gap which is part of a nanoelectromechnical system (NEMS) device and the second negative capacitance insulator includes a ferroelectric material. Both of the negative capacitance insulators may be located between the channel and gate of a field effect transistor. The NEMS device may include a movable electrode, a dielectric and a fixed electrode and arranged so that the movable electrode is attached to at least two points and spaced apart from the dielectric and fixed electrode, and the ferroelectric capacitor is electrically connected to either of the electrodes.

公开(公告)号：US09708177B2

公开(公告)日：2017-07-18

申请号：US14342387

申请日：2012-08-31

Applicant: Robertus Petrus Van Kampen ,  Mickael Renault ,  Vikram Joshi ,  Richard L. Knipe ,  Anartz Unamuno

Inventor： Robertus Petrus Van Kampen ,  Mickael Renault ,  Vikram Joshi ,  Richard L. Knipe ,  Anartz Unamuno

IPC: B81B7/00 ,  B81C1/00 ,  H01H59/00 ,  H01G5/16

CPC classification number: B81B7/00 ,  B81B2201/016 ,  B81B2203/0307 ,  B81C1/00039 ,  B81C2203/0136 ,  H01G5/16 ,  H01H59/0009 ,  Y10T29/49105

Abstract: Embodiments of the present invention generally relate to a MEMS device that is anchored using the layer that is deposited to form the cavity sealing layer and/or with the layer that is deposited to form the pull-off electrode. The switching element of the MEMS device will have a flexible or movable portion and will also have a fixed or anchor portion that is electrically coupled to ground. The layer that is used to seal the cavity in which the switching element is disposed can also be coupled to the fixed or anchor portion of the switching element to anchor the fixed or anchor portion within the cavity. Additionally, the layer that is used to form one of the electrodes may be used to provide additional leverage for anchoring the fixed or anchor portion within the cavity. In either situation, the movement of the flexible or movable portion is not hindered.

公开(公告)号：US20170098509A1

公开(公告)日：2017-04-06

申请号：US15385431

申请日：2016-12-20

Applicant: Texas Instruments Incorporated

Inventor： Arun Gupta ,  William C. McDonald ,  Adam Fruehling ,  Ivan Kmecko ,  Lance Barron ,  Divyanshu Agrawal ,  Arthur M. Turner ,  John C. Ehmke

IPC: H01G5/16 ,  H01G5/011 ,  B81B7/00 ,  H01G5/40

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/001 ,  B81B3/0013 ,  B81B7/0064 ,  B81B7/008 ,  B81B7/02 ,  B81B2201/016 ,  B81B2201/0221 ,  B81B2203/0109 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2203/0181 ,  B81B2203/053 ,  B81B2203/058 ,  B81B2203/06 ,  B81B2207/012 ,  B81B2207/096 ,  B81C1/00158 ,  H01G5/011 ,  H01G5/40

Abstract: A MEMs actuator device and method of forming includes arrays of actuator elements. Each actuator element has a moveable top plate and a bottom plate. The top plate includes a central membrane member and a cantilever spring for movement of the central membrane member. The bottom plate consists of two RF signal lines extending under the central membrane member. A MEMs electrostatic actuator device includes a CMOS wafer, a MEMs wafer, and a ball bond assembly. Interconnections are made from a ball bond to an associated through-silicon-via (TSV) that extends through the MEMS wafer. A RF signal path includes a ball bond electrically connected through a TSV and to a horizontal feed bar and from the first horizontal feed bar vertically into each column of the array. A metal bond ring extends between the CMOS wafer and the MEMS wafer. An RF grounding loop is completed from a ground shield overlying the array to the metal bond ring, a TSV and to a ball bond.

公开(公告)号：US09546090B1

公开(公告)日：2017-01-17

申请号：US14826449

申请日：2015-08-14

Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.

Inventor： Jia Jie Xia ,  Nagarajan Ranganathan ,  Rakesh Kumar ,  Aveek Nath Chatterjee

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/016 ,  B81B2201/0271 ,  B81B2207/015 ,  B81B2207/07 ,  B81C1/00246 ,  B81C1/00253 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2201/053 ,  B81C2203/0735 ,  B81C2203/0771 ,  B81C2203/0792

Abstract: Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.

Abstract translation: 提供了用于制造MEMS器件和CMOS器件的集成MEMS-CMOS器件和方法。 用于制造MEMS器件和CMOS器件的示例性方法包括在半导体衬底的第一侧中和/或之上形成CMOS器件。 此外，该方法包括在半导体衬底的第二面内和/或下方形成MEMS器件。 半导体衬底的第二面与半导体衬底的第一侧相对。

公开(公告)号：US09343242B2

公开(公告)日：2016-05-17

申请号：US11767413

申请日：2007-06-22

Applicant: Lianjun Liu

Inventor： Lianjun Liu

IPC: H01H1/00 ,  B81C1/00 ,  H01H1/06 ,  H01H1/20 ,  H01H11/04

CPC classification number: H01H1/0036 ,  B81B2201/016 ,  B81C1/00103 ,  H01H1/06 ,  H01H1/20 ,  H01H11/04 ,  Y10T29/49105 ,  Y10T29/49174

Abstract: A device 20 includes a substrate 22 coupled with a substrate 24 such that a volume 32 is formed between the substrates 22, 24. Contact posts 48, 50 on the substrate 22 and a cantilever beam structure 36 on the substrate 24 are located within the volume 32. The cantilever beam structure has a conductive trace 38 that is selectively contactable with the contact posts 48, 50 to yield a microelectromechanical (MEMS) switch within the volume 32. Fabrication methodology for making the contact posts 48, 50 entails forming post protrusions 68, 70 on the substrate 22 and shaping post protrusions 68, 70 so that they acquire a rounded shape. Input and output signal lines 42, 44 are constructed such that respective portions of input and output signal lines 42, 44 overly corresponding post protrusions 68, 70 and take on the shape of post protrusions 68, 70.

Abstract translation: 器件20包括与衬底24耦合的衬底22，使得在衬底22,24之间形成体积32.衬底22上的接触柱48,50和衬底24上的悬臂梁结构36位于体积 悬臂梁结构具有能够与接触柱48,50选择性地接触的导电迹线38，以在体积32内产生微机电（MEMS）开关。用于制造接触柱48,50的制造方法需要形成后突起68 ，70在基板22上，并且成形柱突起68,70，使得它们获得圆形。 输入和输出信号线42,44被构造成使得输入和输出信号线42,44的相应部分过度对应的柱形突起68,70并且呈立柱形突起68,70的形状。