公开(公告)号：US08878315B2

公开(公告)日：2014-11-04

申请号：US13768235

申请日：2013-02-15

Applicant: International Business Machines Corporation

Inventor： Felix P. Anderson ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC: H01L29/84 ,  B81C1/00 ,  H01H59/00 ,  G06F17/50

CPC classification number: H01H59/00 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/0107 ,  G06F17/5068

Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.

Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一布线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。

公开(公告)号：US08535966B2

公开(公告)日：2013-09-17

申请号：US12844299

申请日：2010-07-27

Applicant: Felix P. Anderson ,  Thomas L. McDevitt ,  Anthony K. Stamper

Inventor： Felix P. Anderson ,  Thomas L. McDevitt ,  Anthony K. Stamper

IPC: H01L21/00

CPC classification number: H01H59/00 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/00182 ,  B81C2201/0107 ,  G06F17/5068

Abstract: A MEMS structure and methods of manufacture. The method includes forming a sacrificial metal layer at a same level as a wiring layer, in a first dielectric material. The method further includes forming a metal switch at a same level as another wiring layer, in a second dielectric material. The method further includes providing at least one vent to expose the sacrificial metal layer. The method further includes removing the sacrificial metal layer to form a planar cavity, suspending the metal switch. The method further includes capping the at least one vent to hermetically seal the planar cavity.

Abstract translation: MEMS结构及制造方法。 该方法包括在第一电介质材料中形成与布线层相同水平的牺牲金属层。 该方法还包括在第二电介质材料中形成与另一配线层相同水平的金属开关。 该方法还包括提供至少一个通风口以暴露牺牲金属层。 该方法还包括去除牺牲金属层以形成平坦的空腔，使金属开关悬挂。 该方法还包括加盖至少一个通气口以气密地密封平面腔。

公开(公告)号：US08420427B2

公开(公告)日：2013-04-16

申请号：US11492671

申请日：2006-07-25

Applicant: Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Gilbert

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Gilbert

IPC: H01L21/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Methods for Implementation of a Switching Function in a Microscale Device and for Fabrication of a Microscale Switch. According to one embodiment, a method is provided for implementing a switching function in a microscale device. The method can include providing a stationary electrode and a stationary contact formed on a substrate. Further, a movable microcomponent suspended above the substrate can be provided. A voltage can be applied between the between a movable electrode of the microcomponent and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode, whereby the movable component is deflected toward the substrate and a movable contact moves into contact with the stationary contact to permit an electrical signal to pass through the movable and stationary contacts. A current can be applied through the first electrothermal component to produce heating for generating force for moving the microcomponent.

Abstract translation: 用于实现微尺度装置中的切换功能以及用于制造微型开关的方法。 根据一个实施例，提供了一种用于在微型设备中实现切换功能的方法。 该方法可以包括提供固定电极和形成在基板上的固定触点。 此外，可以提供悬浮在基板上方的可移动微型部件。 可以在微型组件的可动电极和固定电极之间施加电压，以使可动电极与固定电极静电耦合，由此可动部件朝向基板偏转，并且可动触点移动到与固定触点接触 允许电信号通过可移动和固定触点。 可以通过第一电热部件施加电流以产生用于产生用于移动微型部件的力的加热。

公开(公告)号：US20110316383A1

公开(公告)日：2011-12-29

申请号：US13201114

申请日：2010-02-23

Applicant: Shuntaro Machida ,  Takashi Kobayashi

Inventor： Shuntaro Machida ,  Takashi Kobayashi

IPC: H02N1/00 ,  H05K3/02

CPC classification number: B06B1/0292 ,  B81C1/00158 ,  B81C1/00182 ,  B81C1/00214 ,  B81C1/00476 ,  B81C1/00531 ,  B81C1/00611 ,  B81C2201/0104 ,  B81C2201/0107 ,  B81C2201/0109 ,  C09K13/00 ,  C23F4/00 ,  H01L21/30604 ,  H01L29/84 ,  Y10T29/49156

Abstract: Disclosed is an art for a capacitive micromachined ultrasonic transducer (CMUT), which suppresses deformation in a cavity, non-uniformity in the thickness of an insulating film enclosing the cavity, and deterioration in the flatness of the surface profile of a membrane, even when the bottom electrode of the ultrasonic transducer is electrically connected from the bottom of the bottom electrode. The ultrasonic transducer is provided with: a bottom electrode (306); an electric connection part (304) which is connected to the bottom electrode from the bottom of the bottom electrode; a first insulating film which is formed so as to cover the bottom electrode; a cavity (308) which is formed on the first insulating film so as to overlap the bottom electrode when seen from above; a second insulating film which is formed so as to cover the cavity (308); and a top electrode (310) which is formed on the second insulating film so as to overlap the cavity (308) when seen from above. The electric connection part (304) to the bottom electrode (306) is positioned so as to not overlap the cavity (308) when seen from above.

Abstract translation: 公开了一种电容微加工超声波换能器（CMUT）的技术，其抑制空腔中的变形，包围空腔的绝缘膜的厚度不均匀，以及膜的表面轮廓的平坦度的劣化，即使当 超声波换能器的底部电极从底部电极的底部电连接。 所述超声波换能器设置有：底部电极（306）; 电连接部（304），其从所述底部电极的底部连接到所述底部电极; 形成为覆盖底部电极的第一绝缘膜; 形成在第一绝缘膜上以便从上方观察时与底部电极重叠的空腔（308）; 形成为覆盖空腔（308）的第二绝缘膜; 以及当从上方观察时，形成在第二绝缘膜上以与空腔（308）重叠的顶部电极（310）。 当从上方观察时，到底部电极（306）的电连接部分（304）被定位成不与空腔（308）重叠。

公开(公告)号：US07851239B2

公开(公告)日：2010-12-14

申请号：US12133813

申请日：2008-06-05

Applicant: James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

Inventor： James Randolph Webster ,  Thanh Nghia Tu ,  Xiaoming Yan ,  Wonsuk Chung

IPC: H01L21/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

Abstract translation: 提供了减轻设备的可移动部件的永久性粘附或静电的机电系统装置的制造方法。 该方法提供了具有改进和可再现的表面粗糙度的非晶硅牺牲层。 非晶硅牺牲层对于机电系统器件中常用的材料进一步表现出优异的附着性。

公开(公告)号：US07229542B2

公开(公告)日：2007-06-12

申请号：US10434315

申请日：2003-05-07

Applicant: Christopher A. Bang

Inventor： Christopher A. Bang

IPC: B41C3/02 ,  C25D1/10 ,  B29C33/40 ,  B29C45/14 ,  B29B13/00

CPC classification number: G01P15/0802 ,  B33Y10/00 ,  B81B2201/042 ,  B81C99/0085 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/0197 ,  G01P15/125

Abstract: Molded structures, methods of and apparatus for producing the molded structures are provided. At least a portion of the surface features for the molds are formed from multilayer electrochemically fabricated structures (e.g. fabricated by the EFAB™ formation process), and typically contain features having resolutions within the 1 to 100 μm range. The layered structure is combined with other mold components, as necessary, and a molding material is injected into the mold and hardened. The layered structure is removed (e.g. by etching) along with any other mold components to yield the molded article. In some embodiments portions of the layered structure remain in the molded article and in other embodiments an additional molding material is added after a partial or complete removal of the layered structure.

Abstract translation: 提供了模制结构，制造模制结构的方法和设备。 用于模具的表面特征的至少一部分由多层电化学制造的结构（例如通过EFAB TM形成工艺制造）形成，并且通常包含具有在1至100μm范围内的分辨率的特征。 根据需要，将层状结构与其他模具部件组合，并将模塑材料注入模具中并硬化。 层压结构与任何其它模具部件一起被除去（例如通过蚀刻）以产生模塑制品。 在一些实施例中，分层结构的部分保留在模制品中，并且在其它实施例中，在部分或完全去除层状结构之后添加另外的模制材料。

公开(公告)号：US06917086B2

公开(公告)日：2005-07-12

申请号：US10817270

申请日：2004-04-02

Applicant: Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

Inventor： Shawn Jay Cunningham ,  Svetlana Tatic-Lucic

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00 ,  H01L29/82 ,  H01L21/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：US06882264B2

公开(公告)日：2005-04-19

申请号：US10290807

申请日：2002-11-08

Applicant: Shawn Jay Cunningham

Inventor： Shawn Jay Cunningham

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00 ,  H01H37/52 ,  H02N2/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Electrothermal Self-Latching MEMS Switch and Method. According to one embodiment, a microscale switch having a movable microcomponent is provided and includes a substrate having a stationary contact. The switch can also include a structural layer having a movable contact positioned for contacting the stationary contact when the structural layer moves toward the substrate. An electrothermal latch attached to the structural layer and having electrical communication with the movable contact to provide current flow between the electrothermal latch and the stationary contact when the movable contact contacts the stationary contact for maintaining the movable contact in contact with the stationary contact.

Abstract translation: 电热自锁式MEMS开关及方法。 根据一个实施例，提供具有可移动微组件的微型开关，并且包括具有固定触点的基板。 该开关还可以包括具有可移动触点的结构层，该结构层定位成当结构层向衬底移动时与固定触点接触。 一个电热锁定件，其连接到结构层并且当可动触点接触固定触点以便使可动触点与固定触点接触时，与可动触头电连通以提供电热闩和固定触点之间的电流。

公开(公告)号：US20040191946A1

公开(公告)日：2004-09-30

申请号：US10402889

申请日：2003-03-28

Inventor： Satyadev R. Patel ,  Jonathan C. Doan

IPC: H01L021/00

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/0107

Abstract: A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.

Abstract translation: 本文公开了牺牲层和在制造微机电装置中施加所述牺牲层的方法。 牺牲层包括早期的过渡金属。 具体地，牺牲层包括早期过渡金属元素，早期过渡金属合金或早期过渡金属硅化物。

公开(公告)号：US20040012298A1

公开(公告)日：2004-01-22

申请号：US10291125

申请日：2002-11-08

Applicant: Coventor, Inc.

Inventor： Shawn Jay Cunningham ,  Dana Richard DeReus ,  Subham Sett ,  John Richard Gilbert

IPC: H02N010/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.

Abstract translation: 具有电热驱动和释放的MEMS器件和制造方法。 根据一个实施例，提供微型开关，并且可以包括形成在基板上的基板和固定电极和固定触点。 开关还可以包括悬浮在基板上方的可移动的微型部件。 微组件可以包括包括相对于基底固定的至少一个端部的结构层。 微型部件还可以包括与固定电极间隔开的可动电极和与固定电极间隔开的可动触头。 微组件可以包括附接到结构层的电热组件，并且可操作以产生用于产生用于移动结构层的力的加热。