Abstract:
A high voltage discharge protective device for an RF device having a signal port, includes a blocking capacitor arranged at the signal port of the RF device, a circuit board for mounting the blocking capacitor, and a metal conductor grounded and partially bare. The blocking capacitor includes a main body and two leads connected to the main body and secured to the circuit board. The bottom portion of the main body is bare to form an exposed portion. The exposed portion is spaced apart from the circuit board to form an interval. The metal conductor is disposed within the interval and corresponds to the exposed portion of the blocking capacitor. When the passing voltage within the blocking capacitor reaches a predetermined value, the exposed portion of the blocking capacitor sparkly discharges to the metal conductor. An RF device is also provided.
Abstract:
A high voltage discharge protective device for an RF device having a signal port, includes a blocking capacitor arranged at the signal port of the RF device, a circuit board for mounting the blocking capacitor, and a metal conductor grounded and partially bare. The blocking capacitor includes a main body and two leads connected to the main body and secured to the circuit board. The bottom portion of the main body is bare to form an exposed portion. The exposed portion is spaced apart from the circuit board to form an interval. The metal conductor is disposed within the interval and corresponds to the exposed portion of the blocking capacitor. When the passing voltage within the blocking capacitor reaches a predetermined value, the exposed portion of the blocking capacitor sparkly discharges to the metal conductor. An RF device is also provided.
Abstract:
An inductance device comprises a magnetic core, a coil a conductor and a dielectric member. The coil is made of turns of insulated conductive wire. The conductor is distinct from the coil and is insulated from the magnetic core. The dielectric member is disposed between the conductor and the coil. The dielectric member, the conductor and the coil constitute a capacitor. The inductance device is used in, for example, a filter device or a noise filter.
Abstract:
An inductance device comprises a magnetic core, a coil a conductor and a dielectric member. The coil is made of turns of insulated conductive wire. The conductor is distinct from the coil and is insulated from the magnetic core. The dielectric member is disposed between the conductor and the coil. The dielectric member, the conductor and the coil constitute a capacitor. The inductance device is used in, for example, a filter device or a noise filter.
Abstract:
A method for forming a crater-style sampling capacitor. The capacitor includes a dielectric having a smooth crater shaped input electrode on a first surface and output and guard electrodes on a second surface. A sampling capacitor is defined by the input and output electrodes, and a guard capacitor is defined by the input and guard electrodes. The edge of input electrode is positioned below the first surface to increase surface flash over voltage, further, the input electrode is curved to eliminate corona discharge at edges of the input electrode and to reduce self-heating to negligible levels. The apparatus is suitable for high-voltage radio-frequency applications, such as a mass spectrometer, or other high-voltage applications that require an accurate sampling capacitor for amplitude control and accurate sampling of radio-frequency wave-forms.
Abstract:
A semiconductor package includes an integrated passive device (IPD) including one or more passive devices over a first substrate; and metallization layers over and electrically coupled to the one or more passive devices, where a topmost metallization layer of the metallization layers includes a first plurality of conductive patterns; and a second plurality of conductive patterns interleaved with the first plurality of conductive patterns. The IPD also includes a first under bump metallization (UBM) structure over the topmost metallization layer, where the first UBM structure includes a first plurality of conductive strips, each of the first plurality of conductive strips electrically coupled to a respective one of the first plurality of conductive patterns; and a second plurality of conductive strips interleaved with the first plurality of conductive strips, each of the second plurality of conductive strips electrically coupled to a respective one of the second plurality of conductive patterns.
Abstract:
A multilayer fringe capacitor includes first and second interdigitated capacitor electrodes, both parallel to and intersecting a first planar surface; third and fourth interdigitated capacitor electrodes, the first and second electrodes parallel to and separated by a non-zero distance from the third and fourth electrodes; a first set of coupling vias that electrically couples the first electrode to the third electrode; and a second set of coupling vias that electrically couples the second electrode to the fourth electrode.
Abstract:
A capacitor includes a dielectric layer, a first conductive layer, a second conductive layer, first inner electrodes, second inner electrodes, a first external power electrode layer, a second external power electrode layer, a first outer electrode, and a second outer electrode. The first and second inner electrodes and first and second second outer electrodes are a conductive material. The dielectric layer has through-holes connecting with a first main surface and a second main surface. The first inner electrodes are in a first set of the through-holes and connected to the first conductive layer. The second inner electrodes are in a second set of the through-holes and connected to the second conductive layer. The first outer electrode is on the first external power electrode layer and some side-faces of the dielectric layer. The second outer electrode is on the second external power electrode layer and some side-faces of the dielectric layer.