公开(公告)号：US20230402270A1

公开(公告)日：2023-12-14

申请号：US18333359

申请日：2023-06-12

Applicant: ASM IP Holding, B.V.

Inventor： BeomGyu Heo

IPC: H01J37/32

CPC classification number: H01J37/32935 ,  H01J2237/24564 ,  H01J2237/332

Abstract: An apparatus for semiconductor processing may be provided. The apparatus may comprise a reactor chamber configured to process a wafer, a plasma generator to generate a plasma in the reactor chamber, a plasma control board provided with a power control to control the plasma power in the reactor chamber, and a process controller operably connected to the plasma control board and configured to set plasma parameters for the plasma in the reactor chamber. The plasma control board may comprise a plasma power measurement sensor and may be constructed and/or programmed to count both the number of plasma pulses.

公开(公告)号：US20230395355A1

公开(公告)日：2023-12-07

申请号：US18450652

申请日：2023-08-16

Applicant: Advanced Energy Industries, Inc.

Inventor： Denis Shaw ,  Gideon Van Zyl ,  Kevin Fairbairn

IPC: H01J37/32

CPC classification number: H01J37/32357 ,  H01J37/32926 ,  H01J37/32935

Abstract: Plasma processing systems and methods are disclosed. The system may include at least one modulating supply that modulates plasma properties where the modulation of the plasma properties has a repetition period, T. A synchronization module configured to send a synchronization signal with a synchronization-signal-repetition-period that is an integer multiple of T to at least one piece of equipment connected to the plasma processing system. A waveform-communication module communicates characteristics of a characterized waveform to at least one piece of equipment connected to the plasma system to enable synchronization of pieces of equipment connected to the plasma processing system. The characterized waveform may contain information about the modulation of the plasma or information about a desired waveform of a piece of equipment connected to the plasma processing system.

公开(公告)号：US20230375474A1

公开(公告)日：2023-11-23

申请号：US18114883

申请日：2023-02-27

Applicant: Wisconsin Alumni Research Foundation

Inventor： J. Leon Shohet ,  Michael R. Sussman ,  Faraz A. Choudhury ,  Benjamin B. Minkoff ,  Grzegorz Sabat ,  Joshua M. Blatz

IPC: G01N21/64 ,  H01J37/32 ,  H05H1/24

CPC classification number: G01N21/6428 ,  H01J37/32935 ,  H01J37/32422 ,  H05H1/24 ,  B81C2201/0138 ,  G01N2021/6439

Abstract: The present disclosure provides systems and methods for characterizing the interaction of free radicals with various materials and the use of known interactions to isolate free radical generation from free radical interaction with a target molecule.

公开(公告)号：US11800627B2

公开(公告)日：2023-10-24

申请号：US17255034

申请日：2019-06-25

Applicant: Ruhr-Universität Bochum

Inventor： Dennis Pohle ,  Christian Schulz ,  Ilona Rolfes

IPC: H05H1/00 ,  H01J37/32

CPC classification number: H05H1/0037 ,  H01J37/32935 ,  H01J37/32972

Abstract: A probe for measuring plasma parameters by means of active plasma resonance spectroscopy comprises an external coupling, a balun, an internal coupling, and a probe head. It is provided that the couplings, the balun, and the probe head are integrated in an electrically-insulating substrate cylinder, and the substrate cylinder has a layered structure made from multiple substrate layers along its rotational axis. In this way, a probe for measuring plasma parameters is provided which enables an improved measurement of the plasma parameters, wherein the plasma is influenced as little as possible during the measurement of the plasma parameters.

公开(公告)号：US11791135B2

公开(公告)日：2023-10-17

申请号：US17505623

申请日：2021-10-20

Applicant: Tokyo Electron Limited

Inventor： Shinji Kubota

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/32146 ,  H01J37/32935

Abstract: A plasma processing apparatus includes a chamber, substrate support, radio-frequency (RF) power supply, bias power supply, measuring device, and controller. The RF power supply provides RF power to a lower electrode included in the substrate support in the chamber or to an upper electrode. The bias power supply provides RF bias power to the lower electrode. The measuring device measures a frequency of a reflected wave of the RF power returned toward the RF power supply. The controller controls the bias power supply to adjust a power level of the RF bias power to a peak value of absolute values of negative shifts in frequency of the reflected wave from a frequency of the RF power, or controls the RF power supply to modulate the RF power in a cycle obtained based on an occurrence time of the peak of absolute values.

公开(公告)号：US20230317530A1

公开(公告)日：2023-10-05

申请号：US18328656

申请日：2023-06-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Bo-Ting LIAO ,  Yung-Chang JEN ,  Tsung-Yi TSENG ,  Shao Yong CHEN ,  Hsi Chung CHEN ,  Chih-Teng LIAO

IPC: H01L21/66 ,  H01L21/311 ,  H01J37/32

CPC classification number: H01L22/26 ,  H01L21/31116 ,  H01L21/31144 ,  H01J37/32513 ,  H01J37/32935 ,  H01J37/32449 ,  H01J2237/334

Abstract: A method includes forming an inner chamber in a process chamber of a plasma processing apparatus, the inner chamber having smaller volume than the process chamber. At least one gas is introduced into the inner chamber, and flow of the at least one gas into the inner chamber is measured. The flow of the at least one gas is adjusted to a desired rate, and a wafer is processed by the at least one gas at the desired rate while the inner chamber is not formed.

公开(公告)号：US20230274919A1

公开(公告)日：2023-08-31

申请号：US18013475

申请日：2021-08-11

Applicant: LAM RESEARCH CORPORATION

Inventor： John DREWERY

IPC: H01J37/32

CPC classification number: H01J37/3299 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32935

Abstract: A system for estimating stress on a component of a processing chamber during a process includes a plurality of sensors configured to sense temperatures at a plurality of locations of the component during the process and a controller a controller configured to interpolate the temperatures to estimate a temperature distribution across the component and to estimate the stress on the component during the process. A method of estimating stress on a component of a processing chamber during a process includes sensing temperatures at a plurality of locations of the component during the process, interpolating the temperatures to estimate a temperature distribution across the component, and estimating the stress on the component during the process.

公开(公告)号：US20230197424A1

公开(公告)日：2023-06-22

申请号：US18168362

申请日：2023-02-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Otto CHEN ,  Chi-Ying WU ,  Chia-Chih CHEN

IPC: H01J37/32 ,  H01J37/244

CPC classification number: H01J37/32935 ,  H01J37/32155 ,  H01J37/32146 ,  H01J37/32449 ,  H01J37/244 ,  H01J37/3266 ,  H01J2237/24465 ,  H01J2237/24564 ,  H01J2237/24405 ,  H01J2237/24507

Abstract: An ion collector includes a plurality of segments and a plurality of integrators. The plurality of segments are physically separated from one another and spaced around a substrate support. Each of the segments includes a conductive element that is designed to conduct a current based on ions received from a plasma. Each of the plurality of integrators is coupled to a corresponding conductive element. Each of the plurality of integrators is designed to determine an ion distribution for a corresponding conductive element based, at least in part, on the current conducted at the corresponding conductive element. An example benefit of this embodiment includes the ability to determine how uniform the ion distribution is across a wafer being processed by the plasma.

公开(公告)号：US20230178337A1

公开(公告)日：2023-06-08

申请号：US17912825

申请日：2021-03-19

Applicant: Lam Research Corporation

Inventor： Felix Leib Kozakevich

IPC: H01J37/32

CPC classification number: H01J37/32165 ,  H01J37/32935 ,  H01J37/32183

Abstract: A magnetic field sensor for measuring magnetic field of a current applied to a lower electrode defined within a plasma chamber includes a conductor element disposed along a length of a tubular housing. A plurality of slots is defined on one side of the tubular housing to expose the conductor element.

公开(公告)号：US20230170192A1

公开(公告)日：2023-06-01

申请号：US17537314

申请日：2021-11-29

Applicant: Applied Materials, Inc.

Inventor： Yue GUO ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01J37/32 ,  H01J37/244 ,  H01L21/683 ,  G01R29/12

CPC classification number: H01J37/32935 ,  H01J37/32715 ,  H01J37/244 ,  H01J37/32697 ,  H01L21/6831 ,  G01R29/12

Abstract: Embodiments of the present disclosure generally include an apparatus and methods for measuring and controlling in real-time a potential formed on a substrate in a plasma processing chamber during plasma processing. Embodiments of the disclosure include a plasma processing system that includes a substrate support disposed within a processing volume of the plasma processing system, the substrate support comprising a substrate supporting surface and a dielectric layer disposed between a first electrode and the substrate supporting surface. The plasma processing system further includes a first generator coupled to a second electrode of the plasma processing system, and a sensor disposed a first distance from the substrate supporting surface. The first generator is configured to generate a plasma within the processing volume. The first electrode is disposed a second distance from the substrate supporting surface, and the first distance is less than the second distance. The sensor is generally configured to detect an electric field strength and/or a voltage formed on the substrate during plasma processing.