公开(公告)号：US20130276984A1

公开(公告)日：2013-10-24

申请号：US13575709

申请日：2011-01-27

申请人： Frank Papa ,  Roel Tietema ,  Anthonie Kaland

发明人： Frank Papa ,  Roel Tietema ,  Anthonie Kaland

IPC分类号： C23C16/02

CPC分类号： C23C16/0245 ,  C23C14/022 ,  C23C14/352 ,  H01J37/3405 ,  H01J37/3438 ,  H01J37/3444 ,  H01J37/3467 ,  H01J2237/332 ,  H01J2237/334

摘要： A coating apparatus having a vacuum chamber, a plurality of cathodes arranged therein and also a HIPIMS power source, characterized in that in addition to at least one coating cathode which can be operated with the HIPIMS power source a plurality of etching cathodes is provided which are smaller in area in comparison to the coating cathode, with the etching cathodes being connectable in a predetermined or predeterminable sequence to the HIPIMS power source.

摘要翻译： 一种具有真空室，多个阴极布置在其中以及HIPIMS电源的涂覆设备，其特征在于，除了能够与HIPIMS电源一起操作的至少一个涂层阴极之外，还提供了多个蚀刻阴极， 与涂层阴极相比，面积更小，其中蚀刻阴极可以以预定或可预定的顺序连接到HIPIMS电源。

公开(公告)号：US20130105310A1

公开(公告)日：2013-05-02

申请号：US13661489

申请日：2012-10-26

申请人： Kabushiki Kaisha Kobe Seiko Sho ( Kobe Steel, Ltd.)

发明人： Satoshi Hirota ,  Kenji Yamamoto ,  Hiroshi Tamagaki

IPC分类号： C23C14/35

CPC分类号： H01J37/3405 ,  H01J37/3444 ,  H01J37/3452

摘要： A film formation apparatus of the present invention has two sputtering evaporation sources each of which includes an unbalanced magnetic field formation means formed by an inner pole magnet arranged on the inner side and an outer pole magnet arranged on the outer side of this inner pole magnet, the outer pole magnet having larger magnetic line density than the inner pole magnet, and a target arranged on a front surface of the unbalanced magnetic field formation means, and further has an AC power source for applying alternating current whose polarity is switched with a frequency of 10 kHz or more between the targets of the two sputtering evaporation sources so as to generate discharge between both the targets and perform film formation.

摘要翻译： 本发明的成膜装置具有两个溅射蒸发源，每个溅射源包括由设置在内侧的内磁极形成的不平衡磁场形成装置和设置在该内磁极外侧的外磁极磁体， 所述外磁极磁体具有比所述内极磁体更大的磁线密度，以及设置在所述不平衡磁场形成装置的前表面上的靶，并且还具有AC电源，用于施加交流电，所述交流电极的极性以 在两个溅射源之间的靶之间为10kHz以上，以便在两个靶之间产生放电并进行成膜。

公开(公告)号：US08404089B2

公开(公告)日：2013-03-26

申请号：US12989438

申请日：2009-05-20

申请人： Yoshikuni Horishita ,  Shinobu Matsubara

发明人： Yoshikuni Horishita ,  Shinobu Matsubara

IPC分类号： C23C14/34

CPC分类号： H01J37/34 ,  C23C14/3464 ,  H01J37/3429 ,  H01J37/3444

摘要： When sputtering method is performed by disposing a plurality of targets in parallel with each other, and by charging power to the targets through a plurality of bipolar pulsed power supplies, power can be charged with higher accuracy to the targets while being subject to less effect by the switching noises by a simple control. In a sputtering method in which, for each of targets making a pair, power is supplied in a bipolar pulsed mode by switching ON or OFF of each of the switching elements SW1 through SW4 in a bridge circuit that is connected to positive and negative DC output ends from the DC power supply source, and in which each of the targets is sputtered, switching ON or OFF of the switching elements is performed in a short-circuited state of an output-short-circuiting switching element SW0 which is disposed between positive and negative DC outputs from the DC power supply source. The timing of shifting the output-short-circuiting switching element is mutually deviated from bridge circuit to bridge circuit.

摘要翻译： 当通过将多个靶彼此并联设置并且通过多个双极脉冲电源向目标物充电时进行溅射方法时，可以以更高的精度对靶进行电力充电，同时受到较少的影响 切换噪音通过简单的控制。 在一种溅射方法中，对于成对的每个目标，通过在连接到正和负直流输出的桥式电路中通过切换开关元件SW1至SW4中的每个开关元件的ON或OFF来以双极脉冲模式提供功率 在直流电源上结束，并且其中每个靶被溅射，开关元件的导通或截止在短路开关元件SW0的短路状态下进行，该输出短路开关元件SW0设置在正极和 来自直流电源的负DC输出。 输出短路开关元件的移位定时与桥接电路相互偏离。

公开(公告)号：US20120193225A1

公开(公告)日：2012-08-02

申请号：US13443042

申请日：2012-04-10

申请人： Takamichi FUJII ,  Takayuki Naono ,  Takami Arakawa

发明人： Takamichi FUJII ,  Takayuki Naono ,  Takami Arakawa

IPC分类号： C23C14/34

CPC分类号： B41J2/155 ,  B41J2/14233 ,  C23C14/0036 ,  C23C14/088 ,  C23C14/3407 ,  C23C14/3471 ,  H01J37/32935 ,  H01J37/3299 ,  H01J37/34 ,  H01J37/3444 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/316 ,  Y10T29/42 ,  Y10T428/31504

摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.

摘要翻译： 当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位 被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

公开(公告)号：US20120000767A1

公开(公告)日：2012-01-05

申请号：US12827053

申请日：2010-06-30

申请人： Sean Timothy Halloran

发明人： Sean Timothy Halloran

IPC分类号： C23C14/34

CPC分类号： C23C14/34 ,  C23C14/54 ,  H01J37/32935 ,  H01J37/3444

摘要： Methods of arc prevention during sputtering of a thin film from a semiconducting target onto a substrate are provided. An alternating current (e.g., having a frequency of about 500 kHz to 15 MHz) can be applied from an electrical power supply to the semiconducting target to form a plasma between the substrate and the semiconducting target. This alternating current can be temporarily interrupted for a time sufficient to sustain the plasma between the substrate and the semiconducting target to inhibit arc formation during sputtering. Sputtering systems are also generally provided for arc prevention during sputtering of a thin film from a semiconducting target onto a substrate.

摘要翻译： 提供了从半导体靶溅射到基底上的薄膜溅射期间的电弧防止方法。 可以从电源向半导体靶施加交流电（例如具有约500kHz至15MHz的频率），以在衬底和半导体靶之间形成等离子体。 该交流电可暂时中断足以维持基板和半导体靶之间的等离子体的时间，以防止溅射期间的电弧形成。 通常还提供溅射系统，用于在将薄膜从半导体靶溅射到衬底上时防止电弧。

公开(公告)号：US20110209995A1

公开(公告)日：2011-09-01

申请号：US12823893

申请日：2010-06-25

申请人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

发明人： Muhammad M. Rasheed ,  Ronald D. DeDore ,  Michael S. Cox ,  Keith A. Miller ,  Donny Young ,  John C. Forster ,  Adolph M. Allen ,  Lara Hawrylchak

IPC分类号： C23C14/34

CPC分类号： H01J37/3444 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32174 ,  H01J37/3438

摘要： Apparatus and methods for performing plasma processing on a wafer supported on a pedestal are provided. The apparatus can include a pedestal on which the wafer can be supported, a variable capacitor having a variable capacitance, a motor attached to the variable capacitor which varies the capacitance of the variable capacitor, a motor controller connected to the motor that causes the motor to rotate, and an output from the variable capacitor connected to the pedestal. A desired state of the variable capacitor is associated with a process recipe in a process controller. When the process recipe is executed the variable capacitor is placed in the desired state.

摘要翻译： 提供了在支撑在基座上的晶片上进行等离子体处理的装置和方法。 该装置可以包括可以支撑晶片的基座，具有可变电容的可变电容器，附接到可变电容器的电动机，其改变可变电容器的电容;连接到电动机的电动机控制器，其使电动机 旋转，以及连接到基座的可变电容器的输出。 可变电容器的期望状态与过程控制器中的过程配方相关联。 当执行处理配方时，将可变电容器置于所需状态。

公开(公告)号：US20100230280A1

公开(公告)日：2010-09-16

申请号：US12659268

申请日：2010-03-02

申请人： Shinya Nakamura ,  Hiroaki Iwasawa ,  Yoshihiro Ikeda

发明人： Shinya Nakamura ,  Hiroaki Iwasawa ,  Yoshihiro Ikeda

IPC分类号： C23C14/34

CPC分类号： C23C14/165 ,  H01J37/3408 ,  H01J37/3438 ,  H01J37/3444

摘要： There is provided a low-cost self-sputtering apparatus which is so arranged that, even when an arc discharge occurs for some reasons or other, failure in electric discharge can be prevented. The self-sputtering apparatus has a vacuum chamber in which a substrate to be processed is disposed; a target to be disposed opposite to the substrate; a sputtering power source for charging the target with a negative DC current; an anode shield which is disposed in a manner to enclose a space in front of the target and which is charged with a positive electric potential; and a gas introduction means for introducing a predetermined sputtering gas into the vacuum chamber. The apparatus further has an LC resonance circuit in parallel with an output circuit from the DC power source to the target.

摘要翻译： 提供了一种低成本自溅射装置，其设置成使得即使由于某些原因等发生电弧放电也可以防止放电故障。 自溅射装置具有设置有待处理基板的真空室; 与衬底相对设置的靶; 用于以负DC电流对目标进行充电的溅射电源; 阳极护罩，其以包围靶的前方的空间并且被带有正电位的方式设置; 以及用于将预定的溅射气体引入真空室的气体引入装置。 该装置还具有与从DC电源到目标的输出电路并联的LC谐振电路。

公开(公告)号：US07663319B2

公开(公告)日：2010-02-16

申请号：US11738491

申请日：2007-04-22

申请人： Roman Chistyakov ,  Bassam Hanna Abraham

发明人： Roman Chistyakov ,  Bassam Hanna Abraham

IPC分类号： H01J7/24

CPC分类号： H01J37/32045 ,  H01J37/32009 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3444 ,  H01J2237/0206

摘要： A strongly-ionized plasma generator includes a chamber for confining a feed gas. An anode is positioned inside the chamber. A cathode assembly is positioned adjacent to the anode inside the chamber. An output of a pulsed power supply is electrically connected between the anode and the cathode assembly. The pulsed power supply comprising solid state switches that are controlled by micropulses generated by drivers. At least one of a pulse width and a duty cycle of the micropulses is varied so that the power supply generates a multi-step voltage waveform at the output having a low-power stage including a peak voltage and a rise time that is sufficient to generate a plasma from the feed gas and a transient stage including a peak voltage and a rise time that is sufficient to generate a more strongly-ionized plasma.

摘要翻译： 强离子化等离子体发生器包括用于限制进料气体的室。 阳极位于室内。 阴极组件邻近室内的阳极定位。 脉冲电源的输出电连接在阳极和阴极组件之间。 脉冲电源包括由驱动器产生的微脉冲控制的固态开关。 微脉冲的脉冲宽度和占空比中的至少一个被改变，使得电源在具有包括峰值电压和足够产生的峰值电压和上升时间的低功率级的输出端产生多级电压波形 来自进料气体的等离子体和包括足以产生更强电离等离子体的峰值电压和上升时间的瞬态级。

公开(公告)号：US20100012482A1

公开(公告)日：2010-01-21

申请号：US12174893

申请日：2008-07-17

申请人： Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

发明人： Jesse N. Klein ,  David C. Halstead ,  Michael R. Gilbert

IPC分类号： C23C14/54

CPC分类号： H01J37/3476 ,  C23C14/54 ,  H01J37/32027 ,  H01J37/32055 ,  H01J37/32935 ,  H01J37/32944 ,  H01J37/34 ,  H01J37/3444 ,  H01J2237/0206

摘要： A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

摘要翻译： 一种溅射系统，其包括具有用作阴极的靶材料的溅射室，以及阳极和工件。 直流（DC）电源为阳极和阴极提供足以在溅射室内产生等离子体的电力。 检测模块通过监视等离子体的电特性来检测溅射室中的电弧的发生。 在一个实施例中，所监测的电特性是等离子体的阻抗。 在另一实施例中，电特性是等离子体的电导。

公开(公告)号：US20090277781A1

公开(公告)日：2009-11-12

申请号：US12437087

申请日：2009-05-07

申请人： Noboru Nakamura ,  Masaki Kuribayashi

发明人： Noboru Nakamura ,  Masaki Kuribayashi

IPC分类号： C23C14/35 ,  C23C14/14

CPC分类号： C23C14/35 ,  C23C14/067 ,  C23C14/3414 ,  H01J37/3408 ,  H01J37/3426 ,  H01J37/3444

摘要： In the present invention, in forming a LaB6 thin film by sputtering, the single-crystal properties in the wide domain direction in the obtained LaB6 thin film is improved. In one embodiment of the present invention, high frequency power from a high frequency power supply, and first direct current power after high frequency components from a first direct current power supply are cut are applied to a target, and direct current power from a second direct current power supply is applied to a substrate holder during the application of the high frequency power and the first direct current power.

摘要翻译： 在本发明中，通过溅射法形成LaB6薄膜时，得到的LaB6薄膜的宽畴方向的单晶特性提高。 在本发明的一个实施例中，切断来自高频电源的高频功率和来自第一直流电源的高频分量之后的第一直流电力被施加到目标，并且来自第二直流电源的直流电力 在施加高频电力和第一直流电力期间，将电流施加到衬底支架。