公开(公告)号：US20140139712A1

公开(公告)日：2014-05-22

申请号：US14088514

申请日：2013-11-25

申请人： Panasonic Corporation

发明人： Takahiro Yamamoto ,  Yoshiyuki MATSUNAGA ,  Makoto YARINO

IPC分类号： H04N5/235 ,  H04N5/374

CPC分类号： H04N5/3742 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14669 ,  H04N5/353 ,  H04N5/3745 ,  H04N2101/00

摘要： An imaging device includes: a stack-type solid-state imaging device which includes pixels including: a photoelectric conversion film which performs photoelectric conversion on light to convert the light into signal charges; a pixel electrode on a first surface of the photoelectric conversion film, the first surface being at a side of the semiconductor substrate; a transparent electrode on a second surface of the photoelectric conversion film, the second surface being opposite to the first surface; and a pixel circuit unit configured to read the signal charges, and accumulate the read signal charges, and the imaging device further includes a control unit configured to control exposure time by selectively applying, to the transparent electrode, a voltage having a first voltage value at which the signal charges move to the pixel circuit unit and a voltage having a second value at which the signal charges move to the pixel circuit unit.

摘要翻译： 一种成像装置，包括：堆叠型固态成像装置，其包括像素，所述像素包括：光电转换膜，其对光进行光电转换以将所述光转换为信号电荷; 所述光电转换膜的第一表面上的像素电极，所述第一表面位于所述半导体衬底的一侧; 在所述光电转换膜的第二表面上的透明电极，所述第二表面与所述第一表面相对; 以及像素电路单元，被配置为读取所述信号电荷并累积所述读取信号电荷，并且所述成像装置还包括控制单元，其被配置为通过选择性地向所述透明电极施加具有第一电压值的电压来控制曝光时间 信号电荷移动到像素电路单元的电压和具有第二值的电压，在该值处信号充电移动到像素电路单元。

公开(公告)号：US08729474B1

公开(公告)日：2014-05-20

申请号：US12576971

申请日：2009-10-09

申请人： Eric A. Kurth ,  Patrick Franklin

发明人： Eric A. Kurth ,  Patrick Franklin

IPC分类号： H01L31/02

CPC分类号： H01L27/14636 ,  G01J5/023 ,  G01J5/024 ,  G01J5/20 ,  H01L27/14607 ,  H01L27/1462 ,  H01L27/14669 ,  H01L27/14683

摘要： Systems and methods are directed to contacts for an infrared detector. For example, an infrared imaging device includes a substrate having a first metal layer and an infrared detector array coupled to the substrate via a plurality of contacts. Each contact includes for an embodiment a second metal layer formed on the first metal layer; a third metal layer formed on the second metal layer, wherein the third metal layer at least partially fills an inner portion of the contact; and a first passivation layer formed on the third metal layer.

摘要翻译： 系统和方法针对红外探测器的触点。 例如，红外成像装置包括具有第一金属层的基板和经由多个触点耦合到基板的红外检测器阵列。 每个触点包括形成在第一金属层上的第二金属层的实施例; 形成在所述第二金属层上的第三金属层，其中所述第三金属层至少部分地填充所述接触件的内部; 以及形成在所述第三金属层上的第一钝化层。

公开(公告)号：US08080797B2

公开(公告)日：2011-12-20

申请号：US12440274

申请日：2006-09-08

申请人： Holger Vogt ,  Marco Russ

发明人： Holger Vogt ,  Marco Russ

IPC分类号： H01L27/14 ,  H01L21/28

CPC分类号： H01L27/14669 ,  G01J5/06 ,  G01J5/20

摘要： A bolometer includes a membrane, a first spacer and a second spacer, the membrane including resistive and contact layers. At a side facing a foundation, the contact layer has a first contact region at which the first spacer electrically contacts the contact layer, and a second contact region at which the second spacer electrically contacts the contact layer. In this manner, the membrane is kept at a predetermined distance to the foundation. The contact layer is laterally interrupted by a gap, so that the contact layer is subdivided at least into two parts, the first part including the first contact region, and the second part including the second contact region, and no direct connection existing within the contact layer from the first contact region to the second contact region, and the resistive layer being in contact with the first and second parts of the contact layer.

摘要翻译： 测辐射热计包括膜，第一间隔物和第二间隔物，所述膜包括电阻层和接触层。 在面向基础的一侧，接触层具有第一接触区域，第一间隔件与接触层电接触，第二接触区域在第二接触区域处，第二间隔物电接触接触层。 以这种方式，将膜保持在与基础相距预定距离。 接触层由间隙横向中断，使得接触层至少分为两部分，第一部分包括第一接触区域，第二部分包括第二接触区域，并且在接触部内不存在直接连接 层，从第一接触区域到第二接触区域，并且电阻层与接触层的第一和第二部分接触。

公开(公告)号：US20110175145A1

公开(公告)日：2011-07-21

申请号：US12998204

申请日：2009-09-24

申请人： Koji Tsuji ,  Yosuke Hagihara ,  Naoki Ushiyama

发明人： Koji Tsuji ,  Yosuke Hagihara ,  Naoki Ushiyama

IPC分类号： H01L29/66 ,  H01L31/028

CPC分类号： H01L27/14649 ,  G01J5/02 ,  G01J5/0225 ,  G01J5/06 ,  G01J5/08 ,  G01J5/0846 ,  G01J5/12 ,  G01J5/20 ,  H01L27/14669 ,  H01L27/14692 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/13091 ,  H01L2924/16151 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

摘要： The infrared sensor (1) includes a base (10), and an infrared detection element (3) formed over a surface of the base (10). The infrared detection element (3) includes an infrared absorption member (33) in the form of a thin film configured to absorb infrared, a temperature detection member (30) configured to measure a temperature difference between the infrared absorption member (33) and the base (10), and a safeguard film (39). The infrared element (3) is spaced from the surface of the base (10) for thermal insulation. The temperature detection member (30) includes a p-type polysilicon layer (35) formed over the infrared absorption member (33) and the base (10), an n-type polysilicon layer (34) formed over the infrared absorption member (33) and the base (10) without contact with the p-type polysilicon layer (35), and a connection layer (36) configured to electrically connect the p-type polysilicon layer (35) to the n-type polysilicon layer (34). The safeguard film (39) is a polysilicon layer formed on an infrared incident surface defined as an opposite surface of the infrared absorption member (33) from the base (10) to cover the infrared incident surface.

摘要翻译： 红外传感器（1）包括基座（10）和形成在基座（10）的表面上的红外线检测元件（3）。 红外线检测元件（3）包括被构造成吸收红外线的薄膜形式的红外线吸收部件（33），配置为测量红外线吸收部件（33）与红外线吸收部件 基座（10）和保护膜（39）。 红外元件（3）与基座（10）的表面间隔开以进行绝热。 温度检测部件（30）包括在红外线吸收部件（33）和基体（10）上形成的p型多晶硅层（35），在红外线吸收部件（33）的上方形成有n型多晶硅层 ）和不与p型多晶硅层（35）接触的基极（10），以及被配置为将p型多晶硅层（35）电连接到n型多晶硅层（34）的连接层（36） 。 保护膜（39）是形成在红外线入射面上的多晶硅层，该红外线入射面被限定为与基部（10）相对的红外线吸收部件（33）的与红外线入射面相反的面。

公开(公告)号：US07943905B2

公开(公告)日：2011-05-17

申请号：US12709759

申请日：2010-02-22

申请人： Hiroto Honda ,  Hideyuki Funaki

发明人： Hiroto Honda ,  Hideyuki Funaki

IPC分类号： H01L25/00

CPC分类号： H01L27/14623 ,  H01L27/14649 ,  H01L27/14669

摘要： An infrared solid-state image sensor comprises: a pixel area comprising a sensitive pixel area where infrared detection pixels are arranged in a matrix form to detect incident infrared rays on the semiconductor substrate and a reference pixel area where reference pixels are provided, each of the infrared detection pixels comprising a thermoelectric conversion part, the thermoelectric conversion part comprising an infrared absorption film to absorb the incident infrared rays and convert the incident infrared rays to heat and a first thermoelectric conversion element to convert the heat obtained by the conversion in the infrared absorption film to a electric signal, each of the reference pixels comprising a second thermoelectric conversion element. Each of first ends of the reference pixels are connected to a reference potential line, and a difference between the signal potential read out from a corresponding signal line and a reference potential supplied from the reference potential line is amplified and outputted.

摘要翻译： 一种红外固态图像传感器包括：像素区域，包括敏感像素区域，其中红外检测像素以矩阵形式布置以检测半导体衬底上的入射红外线和参考像素的参考像素区域， 红外线检测像素包括热电转换部分，该热电转换部分包括用于吸收入射的红外线并将入射的红外线转换成热的红外线吸收膜和第一热电转换元件，以将通过红外吸收中的转换获得的热量转换 每个参考像素包括第二热电转换元件。 参考像素的每个第一端连接到参考电位线，并且从相应的信号线读出的信号电位与从参考电位线提供的参考电位之间的差放大并输出。

公开(公告)号：US20100243892A1

公开(公告)日：2010-09-30

申请号：US12720340

申请日：2010-03-09

申请人： Bertrand DUPONT

发明人： Bertrand DUPONT

IPC分类号： G01J5/30 ,  G01J5/02

CPC分类号： G01J5/22 ,  G01J5/02 ,  G01J5/024 ,  H01L23/5223 ,  H01L27/14618 ,  H01L27/14669 ,  H01L28/60 ,  H01L2924/0002 ,  H04N5/3651 ,  H01L2924/00

摘要： A thermal imaging microelectronic device comprising: a support (200), a plurality of metal levels (M1, . . . , M5, M6) for interconnecting electronic components formed on the support, an array of thermal detectors formed on the support, each detector including a membrane (210) with which radiant energy may be absorbed and one or more electric signals may be provide depending on the absorbed radiant energy, and means for reading out the electric signals from the membrane, the readout means being integrated to the support, at least several of said detectors having readout means provided with an integrator comprising at least one MIM integration capacitor formed facing the membrane, the MIM capacitor having at least one upper plate (244) made in a given interconnection metal level of said plurality of interconnection metal levels (M1, . . . , M5, M6).

摘要翻译： 一种热成像微电子器件，包括：支撑件（200），用于互连形成在所述支撑件上的电子部件的多个金属级（M1，...，M5，M6），形成在所述支撑件上的热检测器阵列，每个检测器 包括可以吸收辐射能并根据吸收的辐射能提供一个或多个电信号的膜（210），以及用于从所述膜读出电信号的装置，所述读出装置被集成到所述支架上， 所述检测器中的至少几个具有读出装置，该读出装置设置有积分器，该积分器包括面向膜的至少一个MIM积分电容器，所述MIM电容器具有至少一个上板（244），所述上板在所述多个互连金属的给定互连金属层 水平（M1，...，M5，M6）。

公开(公告)号：US07786440B2

公开(公告)日：2010-08-31

申请号：US11977767

申请日：2007-10-26

申请人： Andy M. Peczalski ,  Barrett E. Cole

发明人： Andy M. Peczalski ,  Barrett E. Cole

IPC分类号： G01J5/02

CPC分类号： G01J5/08 ,  B82Y20/00 ,  G01J3/36 ,  G01J5/02 ,  G01J5/024 ,  G01J5/0837 ,  G01J5/0853 ,  G01J5/0884 ,  G01J5/24 ,  G01J2005/0077 ,  H01L27/14669

摘要： A multispectral imaging array system and method of forming the same. A substrate and a group of antennas can be located with respect to one another on the substrate, such that respective gaps are formed between each antenna group and wherein different antenna sizes may be used for different spectral ranges. Additionally, one or more nanowires can be located within one or more gaps among the respective gaps, such that the nanowires in communication with the antennas and the substrate comprise a multispectral imaging system in which the use of the nanowire(s) decreases the thermal time constant and therefore the read out rate from the antennas while decreasing the ambient gas cooling speed relative to the read out rate to increase the manufacturability of the multispectral imaging array system.

摘要翻译： 多光谱成像阵列系统及其形成方法。 衬底和一组天线可以在衬底上相对于彼此定位，使得在每个天线组之间形成相应的间隙，并且其中不同的天线尺寸可以用于不同的光谱范围。 另外，一个或多个纳米线可以位于相应间隙中的一个或多个间隙内，使得与天线和衬底连通的纳米线包括多光谱成像系统，其中使用纳米线降低热时间 并且因此相对于读出速率降低环境气体冷却速度，从而增加了多光谱成像阵列系统的可制造性，从天线读出速率。

公开(公告)号：US07622717B2

公开(公告)日：2009-11-24

申请号：US11949367

申请日：2007-12-03

申请人： George D. Skidmore ,  Christopher G. Howard

发明人： George D. Skidmore ,  Christopher G. Howard

IPC分类号： H01L31/00

CPC分类号： H01L27/14669 ,  G01J5/0225 ,  G01J5/046 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14601 ,  H01L27/14625

摘要： A pixel structure for use in an infrared imager is provided. The pixel structure includes a substrate and a bolometer. The bolometer includes a transducer that has a spaced apart relationship with respect to the substrate and has an electrical resistance that varies in response to changes in the temperature of the transducer. The bolometer also includes an absorber that has a spaced apart relationship with respect to the transducer and has a thermal connection to the transducer permitting radiation absorbed by the absorber to heat the transducer. The absorber has a top side defining a recess or channel in the absorber. The recess or channel is adapted to effect the propagation path of a portion of radiation received by the absorber such that the radiation portion is absorbed by the absorber rather than exiting the absorber. The recess or channel also decreases the thermal mass of the bolometer.

摘要翻译： 提供了一种用于红外成像仪的像素结构。 像素结构包括基板和测辐射热计。 测辐射热计包括一个与衬底具有间隔开关系的换能器，并具有响应换能器温度变化而变化的电阻。 测辐射热计还包括与换能器具有间隔开的关系的吸收器，并且具有与换能器的热连接，允许由吸收器吸收的辐射来加热换能器。 吸收器具有限定吸收器中的凹部或通道的顶侧。 凹部或通道适于影响由吸收体接收的辐射的一部分的传播路径，使得辐射部分被吸收体吸收而不是离开吸收体。 凹槽或通道也会降低测辐射热计的热质。

公开(公告)号：US07521737B2

公开(公告)日：2009-04-21

申请号：US11070721

申请日：2005-03-02

申请人： Carlos J. R. P. Augusto

发明人： Carlos J. R. P. Augusto

IPC分类号： H01L21/00

CPC分类号： H01L27/14669 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14643 ,  H01L27/14665 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/1075

摘要： A method of fabricating light-sensing devices including photodiodes monolithically integrated with CMOS devices. Several types of photodiode devices (PIN, HIP) are expitaxially grown in one single step on active areas implanted in a common semiconductor substrate, the active areas having defined polarities. The expitaxially grown layers for the photodiode devices may be either undoped or in-situ doped with profiles suitable for their respective operation. With appropriate choice of substrate materials, device layers and heterojunction engineering and process architecture, it is possible to fabricate silicon-based and germanium-based multi-spectral sensors that can deliver pixel density and cost of fabrication comparable to the state of the art CCDs and CMOS image sensors. The method can be implemented with epitaxially deposited films on the following substrates: Silicon Bulk, Thick-Film and Thin-Film Silicon-On-Insulator (SOI), Germanium Bulk, Thick-Film and Thin-Film Geranium-On-Insulator (GeOI).

摘要翻译： 一种制造包括与CMOS器件单片集成的光电二极管的光感测装置的方法。 多个类型的光电二极管器件（PIN，HIP）在植入公共半导体衬底的有源区域的一个步骤中外延生长，有源区域具有确定的极性。 用于光电二极管器件的外延生长层可以是非掺杂的或原位掺杂的，适用于它们各自的操作。 通过适当选择衬底材料，器件层和异质结工程和工艺架构，可以制造基于硅和锗的多光谱传感器，可以提供与现有技术CCD相当的像素密度和制造成本， CMOS图像传感器。 该方法可以在以下基板上用外延沉积膜实现：硅体积，厚膜和薄膜绝缘体上硅（SOI），锗体积，厚膜和薄膜天竺葵绝缘体（GeOI ）。

公开(公告)号：US20070029482A1

公开(公告)日：2007-02-08

申请号：US11197325

申请日：2005-08-05

申请人： Philips Laou ,  Linh Ngo Phong

发明人： Philips Laou ,  Linh Ngo Phong

IPC分类号： H01L25/00

CPC分类号： H01L27/14669 ,  H01L27/14632 ,  H04N5/33

摘要： An infrared imager for detecting infrared (IR) radiation of a scene in a field of view (FOV) of an optical system and converting the IR into a visible image wherein the imager consists of an array of uncooled microbolometers in a focal plane of the optical system and a array of light emitting diode (LED) or liquid crystal display (LCD) elements. The IR radiation collected by the microbolometer produces a change in an electrical output applied to electronic circuitry connected to the array of LED s or LCDs. The electronic circuitry controls the intensity of a LED element or the reflectance of an LCD element. As a result, the imager converts the infrared radiation from the scene into visible light. The light reflected from the LCD or produced by LEDs in an array constitutes the scene image

摘要翻译： 一种用于检测光学系统的视野（FOV）中的场景的红外（IR）辐射并将该红外成像器转换为可见光图像的红外成像器，其中该成像器由该光学器件的焦平面中的非制冷微波计数器阵列组成 系统和一系列发光二极管（LED）或液晶显示（LCD）元件。 由微热辐射热计收集的红外辐射产生施加到连接到LED或LCD阵列的电子电路的电输出的变化。 电子电路控制LED元件的强度或LCD元件的反射率。 结果，成像器将来自场景的红外辐射转换成可见光。 从LCD反射或由阵列中的LED产生的光构成场景图像