公开(公告)号：US20210035988A1

公开(公告)日：2021-02-04

申请号：US17072480

申请日：2020-10-16

Applicant: ASM IP Holding B.V.

Inventor： Tae Hee Yoo ,  Yoon Ki Min ,  Yong Min Yoo

IPC: H01L27/1157 ,  H01L21/311 ,  H01L21/768 ,  H01L27/11524 ,  H01L21/02 ,  H01L27/11575 ,  H01L27/11548

Abstract: Provided is a substrate processing method that may prevent the non-uniformity of the thickness of landing pads deposited on each step in a vertical NAND device having a stepped structure. The substrate processing method includes stacking, a plurality of times, a stack structure including an insulating layer and a sacrificial layer and etching the stack structure to form a stepped structure having an upper surface, a lower surface, and a side surface connecting the upper surface and the lower surface. The method also includes forming a barrier layer on the stepped structure, forming a mask layer on the barrier layer and exposing at least a portion of the barrier layer by etching at least a portion of the mask layer with a first etching solution The method further includes etching the exposed barrier layer with a second etching solution and etching the mask layer with a third etching solution,

公开(公告)号：US20210035854A1

公开(公告)日：2021-02-04

申请号：US16932707

申请日：2020-07-18

Applicant: ASM IP Holding B.V.

Inventor： TaeHee Yoo ,  YoungHoon Kim ,  SeWoong Jung

IPC: H01L21/762 ,  H01L21/311 ,  H01L21/02

Abstract: Methods of forming structures that include a step of treating a layer to remove residual etchant compounds, such as fluorine, are disclosed. Exemplary methods can be used to fill features on a surface of a substrate during a device manufacturing process.

公开(公告)号：US20210035840A1

公开(公告)日：2021-02-04

申请号：US16935275

申请日：2020-07-22

Applicant: ASM IP Holding B.V.

Inventor： Chris G.M. de Ridder ,  Theodorus G.M. Oosterlaken

IPC: H01L21/677 ,  F27B17/00 ,  B65G1/04 ,  F27D3/12 ,  F27D3/00 ,  H01L21/67 ,  H01L21/673

Abstract: A vertical batch furnace assembly for processing wafers comprising a cassette handling space, a wafer handling space, and a first wall separating the cassette handling space from the wafer handling space. The wall having a wafer transfer opening. The wafer transfer opening is associated with a cassette carrousel comprising a carrousel stage having a plurality of cassette support surfaces each configured for supporting a wafer cassette. The carrousel stage is rotatable by an actuator around a substantially vertical axis to transfer each cassette support surface to a wafer transfer position in front of the wafer transfer opening and to at least one cassette load/retrieve position, wherein the vertical batch furnace assembly is configured to load or retrieve a wafer cassette on or from a cassette support surface of the carousel stage which is in the at least one load/retrieve position.

公开(公告)号：US20210028021A1

公开(公告)日：2021-01-28

申请号：US17038514

申请日：2020-09-30

Applicant: ASM IP Holding B.V.

Inventor： MOATAZ BELLAH MOUSA ,  Peng-Fu Hsu ,  Ward Johnson ,  Petri Raisanen

IPC: H01L21/28 ,  H01L21/02 ,  H01L21/285

Abstract: A method of forming an electrode on a substrate is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a titanium tetraiodide (TiI4) precursor; contacting the substrate with a second vapor phase reactant comprising a nitrogen precursor; and depositing a titanium nitride layer over a surface of the substrate thereby forming the electrode; wherein the titanium nitride layer has an electrical resistivity of less than 400 μΩ-cm. Related semiconductor device structures including a titanium nitride electrode deposited by the methods of the disclosure are also provided.

公开(公告)号：US20210013042A1

公开(公告)日：2021-01-14

申请号：US16936950

申请日：2020-07-23

Applicant: ASM IP Holding B.V.

Inventor： Katja Väyrynen ,  Mikko Ritala ,  Markku Leskelä

IPC: H01L21/285 ,  C23C16/455 ,  C23C16/04 ,  C23C16/18 ,  H01L21/768

Abstract: Methods for forming a metallic film on a substrate by cyclical deposition are provided. In some embodiments methods may include contacting the substrate with a first reactant comprising a non-halogen containing metal precursor comprising at least one of copper, nickel or cobalt and contacting the substrate with a second reactant comprising a hydrocarbon substituted hydrazine. In some embodiments related semiconductor device structures may include at least a portion of a metallic interconnect formed by cyclical deposition processes.

公开(公告)号：US20210013010A1

公开(公告)日：2021-01-14

申请号：US16921866

申请日：2020-07-06

Applicant: ASM IP Holding B.V.

Inventor： Jun Yoshikawa ,  Toshihisa Nozawa

IPC: H01J37/32

Abstract: Examples of a plasma device includes a coaxial waveguide having an inner conductor and an outer conductor enclosing the inner conductor with a first gap provided between the outer conductor and the inner conductor, the coaxial waveguide having a shape of branching at a plurality of branch parts, a plurality of rods having a conductor and a dielectric enclosing the conductor with a second gap provided between the dielectric and the conductor, the plurality of rods connecting two end parts of the coaxial waveguide branched at the branch parts, so as to connect the first gap and the second gap, and a conductive stub provided at a branched portion, obtained by branching at the branch parts, of the coaxial waveguide, the conductive stub being insertable to and removable from the first gap.

公开(公告)号：US20200370179A1

公开(公告)日：2020-11-26

申请号：US16990822

申请日：2020-08-11

Applicant: ASM IP HOLDING B.V.

Inventor： Jereld Lee Winkler ,  Cheuk Li ,  Michael F. Schultz ,  John Kevin Shugrue

IPC: C23C16/455 ,  H01L21/67 ,  C23C16/458 ,  C23C16/52

Abstract: A semiconductor processing device can include a reactor assembly comprising a reaction chamber sized to receive a substrate therein. An exhaust line can be in fluid communication with the reaction chamber, the exhaust line configured to transfer gas out of the reaction chamber. A valve can be disposed along the exhaust line to regulate the flow of the gas along the exhaust line. A control system can be configured to operate in an open loop control mode to control the operation of the valve.

公开(公告)号：US20200343358A1

公开(公告)日：2020-10-29

申请号：US16924595

申请日：2020-07-09

Applicant: ASM IP Holding B.V.

Inventor： Chiyu Zhu ,  Kiran Shrestha ,  Petri Raisanen ,  Michael Eugene Givens

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  C23C16/455 ,  H01L29/49 ,  C23C16/34

Abstract: Methods for forming a semiconductor device structure are provided. The methods may include forming a molybdenum nitride film on a substrate by atomic layer deposition by contacting the substrate with a first vapor phase reactant comprising a molybdenum precursor, contacting the substrate with a second vapor phase reactant comprise a nitrogen precursor, and contacting the substrate with a third vapor phase reactant comprising a reducing precursor. The methods provided may also include forming a gate electrode structure comprising the molybdenum nitride film, the gate electrode structure having an effective work function greater than approximately 5.0 eV. Semiconductor device structures including molybdenum nitride films are also provided.

公开(公告)号：US20200343134A1

公开(公告)日：2020-10-29

申请号：US16926192

申请日：2020-07-10

Applicant: ASM IP Holding B.V.

Inventor： Alexey Y. Kovalgin ,  Mengdi Yang ,  Antonius A. I. Aarnink ,  Rob A.M. Wolters

IPC: H01L21/768 ,  C23C16/04 ,  C23C16/14 ,  C23C16/56 ,  C23C16/455 ,  C23C16/06 ,  H01L21/285 ,  H01L23/532

Abstract: A method for selectively depositing a metal film onto a substrate is disclosed. In particular, the method comprising flowing a metal precursor onto the substrate and flowing a non-metal precursor onto the substrate, while contacting the non-metal precursor with a hot wire. Specifically, a reaction between a tungsten precursor and a hydrogen precursor selectively forms a tungsten film, where the hydrogen precursor is excited by a tungsten hot wire.

公开(公告)号：US20200340114A1

公开(公告)日：2020-10-29

申请号：US16835849

申请日：2020-03-31

Applicant: ASM IP HOLDING B.V.

Inventor： Jani Hamalainen ,  Mikko Ritala ,  Markku Leskela

IPC: C23C16/455 ,  C23C16/06 ,  C23C16/30 ,  C23C16/08 ,  C23C16/34

Abstract: Methods for depositing rhenium-containing thin films are provided. In some embodiments metallic rhenium-containing thin films are deposited. In some embodiments rhenium sulfide thin films are deposited. In some embodiments films comprising rhenium nitride are deposited. The rhenium-containing thin films may be deposited by cyclic vapor deposition processes, for example using rhenium halide precursors. The rhenium-containing thin films may find use, for example, as 2D materials.