Abstract:
A proximity sensor includes a printed circuit board substrate, a semiconductor die, electrical connectors, a lens, a light emitting assembly, and an encapsulating layer. The semiconductor die is positioned over the printed circuit board substrate with its upper surface facing away from the printed circuit board substrate. Each of the electrical connectors is in electrical communication with a contact pad of the semiconductor die and a respective contact pad of the printed circuit board substrate. The lens is positioned over a sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads facing the printed circuit board substrate. The encapsulating layer is positioned on the printed circuit board substrate, at least one of the electrical connectors, the semiconductor die, the lens, and the light emitting assembly.
Abstract:
The present disclosure is directed to a solder wire that includes a core having both a rosin flux and a thermoset material. The solder wire being configured to provide an oxide removing rosin flux to an electrical component, a solder alloy to the electrical component, and a protective layer to the solder alloy in a single soldering step.
Abstract:
An electronic device is formed by depositing polyimide on a glass substrate. A conductive material is deposited on the polyimide and patterned to form electrodes and signal traces. Remaining portions of the electronic device are formed on the polyimide. A second polyimide layer is then formed on the first polyimide layer. The glass substrate is then removed, exposing the electrodes and the top surface of the electronic device.
Abstract:
An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR filter aligned with the image sensing surface opposite the interconnect layer. The image sensing device may include a flexible interconnect layer aligned with the interconnect layer and having a flexible substrate extending laterally outwardly from the interconnect layer, and electrically conductive traces on the flexible substrate. The image sensing device may also include solder bodies coupling the interconnect layer and the flexible interconnect layer and also defining a gap between the interconnect layer and the flexible interconnect layer.
Abstract:
A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
Abstract:
One or more embodiments are directed to a system-in-package (SiP) that includes a plurality of semiconductor chips and an interposer that that are molded in an encapsulation layer together. That is, a single processing step may be used to encapsulate the semiconductor chips and the interposer in the encapsulation layer. Furthermore, prior to setting or curing, the encapsulation layer is able to flow between the semiconductor chips and the interposer to provide further mechanical support for the semiconductor chips. Thus, the process for forming the SiP is reduced, resulting in a faster processing time and a lower cost. Additionally, one or more embodiments described herein reduce or eliminate warpage of the interposer.
Abstract:
One or more embodiments are directed to a system-in-package (SiP) that includes a plurality of semiconductor chips and an interposer that that are molded in an encapsulation layer together. That is, a single processing step may be used to encapsulate the semiconductor chips and the interposer in the encapsulation layer. Furthermore, prior to setting or curing, the encapsulation layer is able to flow between the semiconductor chips and the interposer to provide further mechanical support for the semiconductor chips. Thus, the process for forming the SiP is reduced, resulting in a faster processing time and a lower cost. Additionally, one or more embodiments described herein reduce or eliminate warpage of the interposer.
Abstract:
A method for making semiconductor devices may include forming a phosphosilicate glass (PSG) layer on a semiconductor wafer, with the PSG layer having a phosphine residual surface portion. The method may further include exposing the phosphine residual surface portion to a reactant plasma to integrate at least some of the phosphine residual surface portion into the PSG layer. The method may additionally include forming a mask layer on the PSG layer after the exposing.
Abstract:
A touch controller is coupled to a touch screen and detects a first gesture at a first point on the touch screen. The first gesture includes physical contact of the touch screen by a user device at the first point. The touch controller detects a second gesture that is associated with movement of the user device from the first point to a second point on the touch screen. The second gesture includes detecting movement of the user device within a sensing range from the first point to the second point. The sensing range corresponds to an orthogonal distance from a surface of the touch screen. The touch controller detects a third gesture at the second touch point. The third gesture includes physical contact of the touch screen at the second touch point. Upon detecting the first, second and third gestures the touch controller performs a corresponding action.
Abstract:
An electronic device includes an integrated circuit chip mounted to a heat slug. The heat slug has a peripheral region having first thickness along a first direction, the peripheral region surrounding a recess region (having a second, smaller, thickness along the first direction) that defines a chip mounting surface along a second direction perpendicular to the first direction. The recess region defines side borders and a nook extends into the heat slug along the side borders. An insulating body embeds the integrated circuit one chip and heat slug. Material of the insulating body fills the nook.