公开(公告)号：US08343823B2

公开(公告)日：2013-01-01

申请号：US13461331

申请日：2012-05-01

Applicant: Stephen D. Hersee ,  Xin Wang

Inventor： Stephen D. Hersee ,  Xin Wang

IPC: H01L21/338

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/2003 ,  H01L29/66462 ,  H01L29/7787 ,  H01L29/7788 ,  H01L29/7789

Abstract: Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).

Abstract translation: 提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。 在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。 包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。 用于制备纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。 用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱，随后形成壳构件。

公开(公告)号：US20120328768A1

公开(公告)日：2012-12-27

申请号：US13582883

申请日：2011-03-09

Applicant: Parthiban Selvam ,  Hugh D.C. Smyth ,  Martin Donovan

Inventor： Parthiban Selvam ,  Hugh D.C. Smyth ,  Martin Donovan

IPC: B05D7/24 ,  B05C11/00

CPC classification number: B05B7/144 ,  A61M15/0028 ,  A61M15/0065 ,  A61M15/009 ,  A61M2202/064 ,  A61M2205/0233 ,  A61M2205/0238 ,  B05B12/36 ,  B05B13/0207

Abstract: A device for coating dry powder microparticles onto a surface may include a jet mill configured to mill dry powder particles into microparticles having a desired aerodynamic diameter and to deaggregate the microparticles, a feed hopper structured and arranged to feed dry powder particles to the jet mill, a surface configured to receive dry powder microparticles and an exit nozzle associated with the jet mill The exit nozzle may be arranged to direct deaggregated micronized dry powder particles from the jet mill to the surface to be coated. The device may further include a holder structured and arranged to hold an item, wherein the item includes the surface. In some aspects of the device, the item may be a film.

Abstract translation: 用于将干燥粉末微粒涂覆到表面上的装置可以包括喷射式粉碎机，其被配置为将干燥粉末颗粒研磨成具有期望的空气动力学直径的微粒并且使微粒解聚，构造并布置成将干燥粉末颗粒送入喷射式粉碎机的进料斗， 被配置为接收干燥粉末微粒的表面和与喷射式粉碎机相关联的出口喷嘴。出口喷嘴可以布置成将来自喷射式粉碎机的解聚集的微粉化干燥粉末颗粒引导到待涂覆的表面。 该装置还可以包括构造和布置成保持物品的保持器，其中物品包括表面。 在设备的某些方面，该项目可以是电影。

公开(公告)号：US20120321521A1

公开(公告)日：2012-12-20

申请号：US13597882

申请日：2012-08-29

Applicant: Paul A. Bentley ,  Michael R. Davenport

Inventor： Paul A. Bentley ,  Michael R. Davenport

IPC: B01J19/08

CPC classification number: G01N33/54326 ,  B03C1/288 ,  B03C2201/18 ,  B03C2201/22

Abstract: The present invention includes a magnetically susceptible polymer component, a method of making the same, and apparatuses and systems for mixing, separating or localizing a magnetically susceptible polymer compound in a reaction. The magnetically susceptible polymer component includes a polymer and a magnetically susceptible particle of a predetermined size, which yields a component having a much-improved magnetic reactivity due to the increase in magnetic material by mass percentage. The apparatuses and systems of the present invention employ controllable magnetic fields distributable in perpendicular directions in order to precisely control the orientation, position and relative motion of any magnetically susceptible components within a reaction vessel.

Abstract translation: 本发明包括磁敏感聚合物组分，其制备方法以及用于在反应中混合，分离或定位磁敏感性聚合物化合物的装置和系统。 磁敏感聚合物组分包括预定尺寸的聚合物和磁敏感颗粒，其由于磁性材料以质量百分比的增加而产生具有大大提高的磁反应性的组分。 本发明的装置和系统采用可分散在垂直方向上的可控磁场，以便精确地控制反应容器内的任何磁敏组件的取向，位置和相对运动。

公开(公告)号：US08334107B2

公开(公告)日：2012-12-18

申请号：US12419853

申请日：2009-04-07

Applicant: Gabriel Lopez ,  Reema Zeineldin ,  Menake Piyasena

Inventor： Gabriel Lopez ,  Reema Zeineldin ,  Menake Piyasena

IPC: G01N33/00

CPC classification number: G01N21/00 ,  C12Q1/18 ,  G01N33/542 ,  G01N33/54313 ,  G01N33/5432 ,  G01N33/554

Abstract: The invention relates to lipid bilayer coated beads and methods of using those beads in immunoassays, in analytical assay and the like.

Abstract translation: 本发明涉及脂双层包被的珠粒和在免疫测定中使用那些珠粒的方法，在分析测定等中。

公开(公告)号：US08324546B1

公开(公告)日：2012-12-04

申请号：US12700939

申请日：2010-02-05

Applicant: Pedro F. Embid

Inventor： Pedro F. Embid

IPC: G01J1/20

CPC classification number: G02B26/06

Abstract: A congruence reduction algorithm that forms composite lenslets by reducing data of a plurality of focal spot locations using linear transformations. Use of the congruence reduction algorithm increases the speed of calculations by which corrective elements such as deformable mirrors function, reduces the number of lenslets in an array and improves reconstruction time and focal spot quality.

Abstract translation: 一致性降低算法，通过使用线性变换减少多个焦点位置的数据来形成复合小透镜。 使用一致性降低算法增加了诸如可变形反射镜之类的校正元件的计算速度，减少了阵列中的小透镜数量，并改善了重建时间和焦斑质量。

公开(公告)号：US08318127B1

公开(公告)日：2012-11-27

申请号：US13033232

申请日：2011-02-23

Applicant: Xingmao Jiang ,  C. Jeffrey Brinker

Inventor： Xingmao Jiang ,  C. Jeffrey Brinker

IPC: C01F7/00

CPC classification number: C01F17/0043 ,  C01F7/30 ,  C01G23/0536 ,  C01P2002/72 ,  C01P2006/12 ,  C01P2006/16

Abstract: Exemplary embodiments provide materials and methods of forming a metal oxide composite and a porous metal oxide, which can be used for applications including catalysis, sensors, energy storage, solar cells, heavy metal removal and separations, etc. In one embodiment, a one-step solvothermal process can be used to form the metal oxide phase with high crystallinity and high surface area.

Abstract translation: 示例性实施例提供形成金属氧化物复合材料和多孔金属氧化物的材料和方法，其可用于包括催化，传感器，储能，太阳能电池，重金属去除和分离等的应用。在一个实施方案中， 可以使用步骤溶剂热法形成具有高结晶度和高表面积的金属氧化物相。

公开(公告)号：US08313967B1

公开(公告)日：2012-11-20

申请号：US12691463

申请日：2010-01-21

Applicant: Seung-Chang Lee ,  Steven R. J. Brueck

Inventor： Seung-Chang Lee ,  Steven R. J. Brueck

IPC: H01L21/20

CPC classification number: C30B25/04 ,  C30B25/18 ,  C30B25/186 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02609 ,  H01L21/02639 ,  H01L21/02647 ,  H01L27/1222 ,  H01L29/045 ,  H01L29/06 ,  H01L29/0657 ,  H01L29/16 ,  H01L29/2003

Abstract: A method of epitaxial growth of cubic phase, nitrogen-based compound semiconductor thin films on a semiconductor substrate, for example a substrate, which is periodically patterned with grooves oriented parallel to the crystal direction and terminated in sidewalls, for example sidewalls. The method can provide an epitaxial growth which is able to supply high-quality, cubic phase epitaxial films on a silicon substrate. Controlling nucleation on sidewall facets, for example , fabricated in every groove and blocking the growth of the initial hexagonal phase at the outer region of an epitaxial silicon layer with barrier materials prepared at both sides of each groove allows growth of cubic-phase thin film in each groove and either be extended to macro-scale islands or coalesced with films grown from adjacent grooves to form a continuous film. This can result in a wide-area, cubic phase nitrogen-based compound semiconductor film on a substrate.

Abstract translation: 在半导体衬底（例如<001>衬底）上外延生长立方相氮基化合物半导体薄膜的方法，该衬底周期性地图案化具有平行于晶体方向并终止于侧壁的沟槽的沟槽，用于 例如<111>侧壁。 该方法可以提供能够在<001>硅衬底上提供高质量立方相外延膜的外延生长。 控制在每个凹槽上制造的侧壁面上的成核，例如<111>，并且阻挡在外延硅层的外部区域处的初始六边形相的生长，其中在每个凹槽的两侧制备的阻挡材料允许生长立方相 每个凹槽中的薄膜，并且被延伸到大尺度岛或与从相邻凹槽生长的薄膜聚结以形成连续薄膜。 这可以导致在<001>衬底上的广泛的立方相的氮基化合物半导体膜。

公开(公告)号：US08263556B2

公开(公告)日：2012-09-11

申请号：US12312090

申请日：2007-11-06

Applicant: Terry W. Du Clos ,  Carolyn Mold

Inventor： Terry W. Du Clos ,  Carolyn Mold

IPC: A61K38/00

CPC classification number: A61K35/15 ,  A61K35/28 ,  A61K38/1745 ,  A61K2300/00

Abstract: The present invention relates to the use of suppressive macrophage or dendritic cells (activated with C-reactive protein or CRP-related compounds), for the treatment of various disease states and conditions associated with immune thrombocytopenic purpura (ITP) and/or systemic lupus erythematosus (SLE), including lupus of the skin (discoid), systemic lupus of the joints, lungs and kidneys, hematological conditions including hemolytic anemia and low lymphocyte counts, lymphadenopathy and CNS effects, including memory loss, seizures and psychosis, among numerous others as otherwise disclosed herein. In another aspect of the invention, the reduction in the likelihood that a patient who is at risk for an outbreak of a disease state or condition associated with systemic lupus erythematosus or ITP will have an outbreak is an additional aspect of the present invention. In the case of ITP, methods of the present invention are used to increase platelet counts in the treated patient. In addition, in the case of ITP, the present invention relates to the use of CRP or a CRP-related compound in the absence of suppressive macrophages for the treatment of ITP.

Abstract translation: 本发明涉及抑制性巨噬细胞或树突状细胞（用C反应蛋白或CRP相关化合物活化）用于治疗与免疫血小板减少性紫癜（ITP）和/或系统性红斑狼疮相关的各种疾病状态和病症 （SLE），包括皮肤（盘状）的狼疮，关节，肺和肾的系统性红斑狼疮，血液病症，包括溶血性贫血和低淋巴细胞计数，淋巴结病和CNS作用，包括记忆丧失，癫痫发作和精神病， 本文另有公开。 在本发明的另一方面，减少与系统性红斑狼疮或ITP相关的疾病状态或疾病爆发危险的患者将发生爆发的可能性是本发明的另外的方面。 在ITP的情况下，本发明的方法用于增加治疗患者的血小板计数。 此外，在ITP的情况下，本发明涉及在不存在抑制性巨噬细胞用于治疗ITP的情况下使用CRP或CRP相关化合物。

公开(公告)号：US08242456B1

公开(公告)日：2012-08-14

申请号：US12965042

申请日：2010-12-10

Applicant: Adam Alexander Hecht ,  Tyler Alecksen

Inventor： Adam Alexander Hecht ,  Tyler Alecksen

IPC: G01J1/42 ,  G01T1/00 ,  G01D18/00 ,  G12B13/00

CPC classification number: G01V5/0075

Abstract: Various embodiments provide a non-collimated 3D localization technique to detect an unknown radioactive source in a medium material using a plurality of detectors. 3D position information (x, y, z), and strength of the unknown radioactive source(s) can be determined by a comparison or a data fit between the measured detector responses with a mapping of detector responses performed with known calibration radioactive source(s). The non-collimated 3D localization technique can be used to extract lateral and depth position of contaminations in soil, concrete, or metal, to aid in monitoring and localizing radiation for nonproliferation and prevent smuggling of nuclear materials, and/or to detect and localize radioactive source(s) in medical or non-medical purposes.

Abstract translation: 各种实施例提供了非准直3D定位技术，以使用多个检测器来检测介质材料中的未知放射源。 3D位置信息（x，y，z）和未知放射源的强度可以通过测量的检测器响应之间的比较或数据拟合与使用已知的校准放射源执行的检测器响应的映射来确定 ）。 非准直3D定位技术可用于提取土壤，混凝土或金属中污染物的侧向和深度位置，以帮助监测和定位辐射用于防扩散，防止核材料走私和/或检测和定位放射性 来源于医疗或非医疗用途。

公开(公告)号：US08203782B2

公开(公告)日：2012-06-19

申请号：US13087297

申请日：2011-04-14

Applicant: Steven R. J. Brueck ,  Alexander Neumann ,  Yuliya V. Kuznetsova

Inventor： Steven R. J. Brueck ,  Alexander Neumann ,  Yuliya V. Kuznetsova

IPC: G02B21/00

CPC classification number: G02B21/18 ,  G02B21/06 ,  G02B21/367

Abstract: Exemplary embodiments provide an image interferometric microscope (IIM) and methods for image interferometric microscopy. The disclosed IIM can approach the linear systems limits of optical resolution by using a plurality of off-axis illuminations to access high spatial frequencies along with interferometric reintroduction of a zero-order reference beam on the low-NA side of the optical system. In some embodiments, a thin object can be placed normal to the optical axis and the frequency space limit can be extended to about [(1+NA)n/λ], where NA is the numerical-aperture of the objective lens used, n is the refraction index of the transmission medium and λ is an optical wavelength. In other embodiments, tilting the object plane can further allow collection of diffraction information up to the material transmission bandpass limited spatial frequency of about 2n/λ.

Abstract translation: 示例性实施例提供图像干涉显微镜（IIM）和用于图像干涉显微镜的方法。 所公开的IIM可以通过使用多个离轴照明来接近高分辨率的光学系统的光学分辨率的线性系统极限，以及在光学系统的低NA侧上的零级参考光束的干涉重新引入。 在一些实施例中，薄物体可以垂直于光轴放置，并且频率空间极限可以扩展到约[（1 + NA）n /λ]，其中NA是所用物镜的数值孔径，n 是传输介质的折射率，λ是光波长。 在其他实施例中，倾斜物平面可以进一步允许将衍射信息收集到材料透射带通限制空间频率约2n /λ。