公开(公告)号：US20210255547A1

公开(公告)日：2021-08-19

申请号：US16973395

申请日：2019-05-20

Applicant: ASML NETHERLANDS B.V.

Inventor： Jeroen Van Dongen ,  Wim Tjibbo TEL ,  Sarathi ROY ,  Yichen ZHANG ,  Andrea CAVALLI ,  Bart Laurens SJENITZER ,  Simon Philip Spencer HASTINGS

IPC: G03F7/20

Abstract: A method of determining a sampling control scheme and/or a processing control scheme for substrates processed by a device. The method uses a fingerprint model and an evolution model to generate the control scheme. The fingerprint model is based on fingerprint data for a processing parameter of at least one substrate processed by a device, and the evolution model represents variation of the fingerprint data over time. The fingerprint model and the evolution model are analyzed and a sampling and/or processing control scheme is generated using the analysis. The sampling control scheme provides an indication for where and when to take measurements on substrates processed by the device. The processing control scheme provides an indication for how to control the processing of the substrate. Also, there is provided a method of determining which of multiple devices contributed to a fingerprint of a processing parameter.

公开(公告)号：US11092900B2

公开(公告)日：2021-08-17

申请号：US16675674

申请日：2019-11-06

Applicant: ASML Netherlands B.V.

Inventor： Maurits Van Der Schaar ,  Youping Zhang ,  Hendrik Jan Hidde Smilde ,  Anagnostis Tsiatmas ,  Adriaan Johan Van Leest ,  Alok Verma ,  Thomas Theeuwes ,  Hugo Augustinus Joseph Cramer ,  Paul Christiaan Hinnen

IPC: G01N21/95 ,  G03F7/20 ,  G01N21/47

Abstract: A substrate has first and second target structures formed thereon by a lithographic process. Each target structure has two-dimensional periodic structure formed in a single material layer on a substrate using first and second lithographic steps, wherein, in the first target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a first bias amount that is close to one half of a spatial period of the features formed in the first lithographic step, and, in the second target structure, features defined in the second lithographic step are displaced relative to features defined in the first lithographic step by a second bias amount close to one half of said spatial period and different to the first bias amount. An angle-resolved scatter spectrum of the first target structure and an angle-resolved scatter spectrum of the second target structure is obtained, and a measurement of a parameter of a lithographic process is derived from the measurements using asymmetry found in the scatter spectra of the first and second target structures.

公开(公告)号：US11086305B2

公开(公告)日：2021-08-10

申请号：US17174159

申请日：2021-02-11

Applicant: ASML NETHERLANDS B.V.

Inventor： Sarathi Roy ,  Edo Maria Hulsebos ,  Roy Werkman ,  Junru Ruan

IPC: G05B19/418 ,  G05B13/02 ,  G03F7/20 ,  G06N3/04

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

公开(公告)号：US11086229B2

公开(公告)日：2021-08-10

申请号：US16497826

申请日：2018-03-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Alexander Ypma ,  Cyrus Emil Tabery ,  Simon Hendrik Celine Van Gorp ,  Chenxi Lin ,  Dag Sonntag ,  Hakki Ergün Cekli ,  Ruben Alvarez Sanchez ,  Shih-Chin Liu ,  Simon Philip Spencer Hastings ,  Boris Menchtchikov ,  Christiaan Theodoor De Ruiter ,  Peter Ten Berge ,  Michael James Lercel ,  Wei Duan ,  Pierre-Yves Jerome Yvan Guittet

IPC: G03F7/20

Abstract: A method and associated computer program for predicting an electrical characteristic of a substrate subject to a process. The method includes determining a sensitivity of the electrical characteristic to a process characteristic, based on analysis of electrical metrology data including electrical characteristic measurements from previously processed substrates and of process metrology data including measurements of at least one parameter related to the process characteristic measured from the previously processed substrates; obtaining process metrology data related to the substrate describing the at least one parameter; and predicting the electrical characteristic of the substrate based on the sensitivity and the process metrology data.

公开(公告)号：US20210241449A1

公开(公告)日：2021-08-05

申请号：US17268863

申请日：2019-08-14

Applicant: ASML NETHERLANDS B.V.

Inventor： Fuming WANG ,  Stefan HUNSCHE ,  Wei FANG

IPC: G06T7/00 ,  G03F7/20 ,  G06T7/73 ,  G06K9/62

Abstract: A method for correcting metrology data of a patterning process. The method includes obtaining (i) metrology data of a substrate subjected to the patterning process and (ii) a quality metric (e.g., a focus index) that quantifies a quality of the metrology data of the substrate; establishing a correlation between the quality metric and the metrology data; and determining a correction to the metrology data based on the correlation between the quality metric and the metrology data.

公开(公告)号：US20210240073A1

公开(公告)日：2021-08-05

申请号：US16972073

申请日：2019-04-29

Applicant: ASML NETHERLANDS B.V.

Inventor： Thomas THEEUWES ,  Koenraad VAN INGEN SCHENAU ,  Pieter Joseph Marie WOLTGENS

IPC: G03F1/70 ,  G03F7/20

Abstract: A method for assigning features into at least first features and second features, the first features being for at least one first patterning device configured for use in a lithographic process to form corresponding first structures on a substrate and the second features being for at least one second patterning device configured for use in a lithographic process to form corresponding second structures on a substrate, wherein the method including assigning the features into the first features and the second features based on a patterning characteristic of the features.

公开(公告)号：US11079684B2

公开(公告)日：2021-08-03

申请号：US16229009

申请日：2018-12-21

Applicant: ASML NETHERLANDS B.V.

Inventor： Franciscus Godefridus Casper Bijnen ,  Edo Maria Hulsebos ,  Henricus Johannes Lambertus Megens ,  Robert John Socha ,  Youping Zhang

IPC: G03F7/20 ,  G03F9/00 ,  G06F30/39

Abstract: A measurement apparatus and method for determining a substrate grid describing a deformation of a substrate prior to exposure of the substrate in a lithographic apparatus configured to fabricate one or more features on the substrate. Position data for a plurality of first features and/or a plurality of second features on the substrate is obtained. Asymmetry data for at least a feature of the plurality of first features and/or the plurality of second features is obtained. The substrate grid based on the position data and the asymmetry data is determined. The substrate grid and asymmetry data are passed to the lithographic apparatus for controlling at least part of an exposure process to fabricate one or more features on the substrate.

公开(公告)号：US11075053B2

公开(公告)日：2021-07-27

申请号：US16667590

申请日：2019-10-29

Applicant: ASML Netherlands B.V.

Inventor： Shuai Li

IPC: H01J37/143 ,  H01J37/28 ,  H01J3/20 ,  H01J37/063 ,  H01J37/065 ,  H01J37/14 ,  H01J37/09

Abstract: This invention provides a charged particle source, which comprises an emitter and means for generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

公开(公告)号：US20210223696A1

公开(公告)日：2021-07-22

申请号：US16334381

申请日：2017-08-23

Applicant: ASML Netherlands B.V.

Inventor： Satish ACHANTA ,  Wilhelmus Jacobus Johannes WELTERS ,  Abraham Alexander SOETHOUDT ,  Jelmer Mattheüs KAMMINGA ,  Christian LIEDECKE

IPC: G03F7/16 ,  C23C16/458 ,  H01L21/67 ,  H01L21/687

Abstract: A substrate, a substrate holder, a substrate coating apparatus, a method for coating the substrate and a method for removing the coating. A monomolecular layer is applied to the backside of the substrate or a clamp surface of the substrate holder. The friction force between the substrate backside and the substrate is small when the substrate does not experience full clamping force. After loading the substrate on the substrate holder full clamping force is exerted in order to fix the substrate. The clamping force causes local removal of the monomolecular layer, resulting in an increase of the friction force between the substrate and the substrate holder.

公开(公告)号：US20210215622A1

公开(公告)日：2021-07-15

申请号：US17194558

申请日：2021-03-08

Applicant: ASML Netherlands B.V.

Inventor： Wouter Lodewijk Elings ,  Franciscus Bernardus Maria Van Bilsen ,  Christianus Gerardus Maria De Mol ,  Everhardus Cornelis Mos ,  Hoite Pieter Theodoor Tolsma ,  Peter Ten Berge ,  Paul Jacques Van Wijnen ,  Leonardus Henricus Marie Verstappen ,  Gerald Dicker ,  Reiner Maria Jungblut ,  Chung-Hsun Li

IPC: G01N21/95 ,  G01B11/14 ,  G01B11/02 ,  G01N21/956 ,  G03F7/20 ,  H01L21/66 ,  G05B19/418 ,  G01B11/00 ,  G01B11/26

Abstract: In the measurement of properties of a wafer substrate, such as Critical Dimension or overlay a sampling plan is produced defined for measuring a property of a substrate, wherein the sampling plan comprises a plurality of sub-sampling plans. The sampling plan may be constrained to a predetermined fixed number of measurement points and is used to control an inspection apparatus to perform a plurality of measurements of the property of a plurality of substrates using different sub-sampling plans for respective substrates, optionally, the results are stacked to at least partially recompose the measurement results according to the sample plan.