Abstract:
The present invention relates to a light emitted diode (LED). The LED includes a metal mirror, a bonding substrate, a distributed bragg reflector (DBR), a buffer layer, and a LED epitaxial structure. The bonding substrate is arranged under the metal mirror. The DBR is arranged on the metal mirror. The buffer layer is arranged on the DBR. The LED epitaxial structure is arranged on the buffer layer.
Abstract:
A light emitting diode includes a casing, a frame in the casing, one or a plurality of light emitting chip, and a packaging polymer; the frame being provided 5 with a placement area to receive placement of the light emitting chip, and an electrode area separated from the placement area; a sectional fall being disposed at where appropriately on the placement area to increase contact area between the frame and the casing and improve the relative stability between the casing and the frame.
Abstract:
A luminous circuit and a luminous device having the same are provided. The luminous circuit may include a first conducting wire and a second conducting wire connected to a positive terminal and a negative terminal of a power supply, respectively. The luminous circuit may further include N light-emitting circuits electrically and sequentially coupled between the first conducting wire and the second conducting wire in a parallel connection fashion beginning from a location in proximity of the power supply. Each of the light-emitting circuits corresponds to a light-emitting element, and jth light-emitting element is better than ith light-emitting element in lighting efficiency, wherein 1≦i
Abstract:
An over voltage protection circuit, adapted for placing between a power pin of a chip and a power terminal is provided. The over voltage protection circuit includes a voltage detection unit, a current limiting component, and a switch component. The voltage detection unit is coupled between the power terminal and a ground, for outputting a setting voltage according to the voltage level at the power terminal. The current limiting component is coupled between the power terminal and the power pin of the chip. The switch component is coupled between the power pin of the chip and the ground, wherein the switch component is further coupled to the voltage detection unit and controlled by the setting voltage. When the voltage level at the power terminal is higher than a first predetermined value, the switch component conducts to cut off voltage received by the chip.
Abstract:
The present invention discloses a LED structure and a method for manufacturing the LED structure. The LED structure includes a substrate, a reflection layer, a first conducting layer, a light emitting layer, and a second conducting layer. The substrate has a plurality of grooves, and the reflection layer is disposed inside the plurality of grooves. The reflection layer is formed as a reflection block inside each of the grooves. The first conducting layer is disposed on the substrate, that is, the reflection layer is disposed between the first conducting layer and the substrate. The light emitting layer and the second conducting layer are sequentially disposed on the first conducting layer. The light emitting layer generates light when a current pass through the light emitting layer. Accordingly, the light generated by the light emitting layer can be emitted to the same side of the LED structure.
Abstract:
The present invention discloses a light emitting element including a carrier, at least one light emitting chip, an adhesive and a first encapsulated layer. The light emitting chip is fixed onto the carrier by the adhesive, and most of the carrier and adhesive are made of a light absorbing material, so that the external luminescence quantum efficiency of the light emitting element is poor. The invention adopts a first encapsulated layer disposed on the carrier to cover the light absorbing material including the adhesive or carrier, so as to reduce the light absorption and improve the external luminescence quantum efficiency of the light emitting element.