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公开(公告)号：US20230333462A1
公开(公告)日：2023-10-19
申请号：US18022508
申请日：2021-08-05
Applicant: ASML NETHERLANDS B. V.
Inventor： Ties Wouter VAN DER WOORD , Alexander Ludwig KLEIN , Zomer Silvester HOUWELING , Inci DONMEZ NOYAN , Volker Dirk HILDENBRAND , Adrianus Johannes Maria HILDENBRAND , Johan Hendrik GIESBERS
Abstract: A pellicle membrane for use in a lithographic apparatus, the pellicle membrane characterized by in plane variation in composition is described. A method of manufacturing a pellicle membrane, the method including: providing a first material layer on a sacrificial layer on a substrate; providing a photoresist layer on the first material layer; patterning the photoresist layer; etching the first material layer to form a patterned surface; and either i) depositing a layer of a second material on the patterned surface and subsequently lifting off the portion of the second material deposited on the patterned photoresist layer, or ii) removing the remaining photoresist layer, depositing a layer of a second material on the patterned surface, and subsequently planarizing the surface.
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公开(公告)号：US20230333290A1
公开(公告)日：2023-10-19
申请号：US18027415
申请日：2021-09-15
Applicant: ASML NETHERLANDS B. V.
Inventor： Ferry ZIJP , Ahmet Burak CUNBUL
CPC classification number: G02B5/001 , G02B3/04 , G02B13/0095 , G03F7/706845 , G03F7/706849
Abstract: A lens system including: a first asphercal axicon lens element having a first refractive surface and a second refractive surface; a second aspherical axicon lens element having a third refractive surface similar to the second refractive surface and a fourth refractive surface similar to the first refractive surface, and an aperture stop located between the first asphercal axicon lens element and the second aspherical axicon lens element. The first aspherical axicon lens element and second aspherical axicon lens are mutually oriented such that the second refractive surface and third refractive surface are mutually facing. The first aspherical axicon lens element and the second aspherical axicon lens element are configured to minimize chromatic aberration for at least a spectral range of radiation relayed by the lens system.
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公开(公告)号：US20230288818A1
公开(公告)日：2023-09-14
申请号：US18017178
申请日：2021-06-14
Applicant: ASML Netherlands B,V.
Inventor： Wenjie JIN , Petrus Wilhelmus SMORENBURG , Nan LIN , Christina Lynn PORTER , David O'DWYER , Cord Louis ARNOLD , Sjoerd Nicolaas,Lambertus DONDERS
IPC: G03F7/20
CPC classification number: G03F7/70641 , G03F7/70008
Abstract: Disclosed is an illumination source comprising a gas delivery system being configured to provide a gas target for generating an emitted radiation at an interaction region of the gas target, and an interferometer for illuminating at least part of the gas target with an interferometer radiation to measure a property of the gas target.
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公开(公告)号：US20230238211A1
公开(公告)日：2023-07-27
申请号：US18011838
申请日：2021-07-05
Applicant: ASML NETHERLANDS B. V.
Inventor： Marco Jan-Jaco WIELAND , Stoyan NIHTIANOV , Roy Ramon VEENSTRA , Hui JIANG
IPC: H01J37/244 , H01J37/317 , H01J37/147
CPC classification number: H01J37/244 , H01J37/3177 , H01J37/1475 , H01J37/1477 , H01J2237/0453 , H01J2237/026
Abstract: A detector substrate (or detector array) for use in a charged particle multi-beam assessment tool to detect charged particles from a sample. The detector substrate defines an array of apertures for beam paths of respective charged particle beams of a multi-beam. The detector substrate includes a sensor unit array. A sensor unit of the sensor unit array is adjacent to a corresponding aperture of the aperture array. The sensor unit is configured to capture charged particles from the sample. The detector array may include an amplification circuit associated with each sensor unit in the sensor unit array and proximate to the corresponding aperture in the aperture array. The amplification circuit may include a Trans Impedance Amplifier and/or an analogue to digital converter.
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公开(公告)号：US20230221659A1
公开(公告)日：2023-07-13
申请号：US18116218
申请日：2023-03-01
Applicant: ASML NETHERLANDS B. V.
CPC classification number: G02B3/00 , G02B27/30 , G03F7/7015 , G02B7/026
Abstract: An assembly for collimating broadband radiation, the assembly including: a convex refractive singlet lens having a first spherical surface for coupling the broadband radiation into the lens and a second spherical surface for coupling the broadband radiation out of the lens, wherein the first and second spherical surfaces have a common center; and a mount for holding the convex refractive singlet lens at a plurality of contact points having a centroid coinciding with the common center.
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Patent Agency Ranking
公开(公告)号：US11662323B2
公开(公告)日：2023-05-30
申请号：US17020574
申请日：2020-09-14
Applicant: ASML Netherlands B. V.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
IPC: G01N23/2251 , H05F3/02 , H01J37/20 , H01J37/02 , H01J37/28
CPC classification number: G01N23/2251 , H01J37/026 , H01J37/20 , H01J37/28 , H05F3/02 , H01J2237/004 , H01J2237/0041 , H01J2237/0044 , H01J2237/202 , H01J2237/2007 , H01J2237/2008 , H01J2237/2448 , H01J2237/2602 , H01J2237/2811 , H01J2237/2813
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
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公开(公告)号：US20220252990A1
公开(公告)日：2022-08-11
申请号：US17625640
申请日：2020-07-07
Applicant: ASML Netherlands B,V.
Inventor： Narjes JAVAHERI , Maurits VAN DER SCHAAR , Tieh-Ming CHANG , Hilko Dirk BOS , Patrick WARNNAR , Samira BAHRAMI , Mohammadreza HAJIAHMADI , Sergey TARABRIN , Mykhailo SEMKIV
IPC: G03F7/20
Abstract: Disclosed is a method comprising measuring radiation reflected from a metrology target and decomposing the measured radiation in components, for example Fourier components or spatial components. Further, there is disclosed a recipe selection method which provides an algorithm to select a parameter of the metrology apparatus based on re-calculated dependencies of 5 the measured radiation based on single components.
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公开(公告)号：US11204239B2
公开(公告)日：2021-12-21
申请号：US16931832
申请日：2020-07-17
Applicant: ASML NETHERLANDS B. V.
Inventor： Kaustuve Bhattacharyya , Henricus Wilhelmus Maria Van Buel , Christophe David Fouquet , Hendrik Jan Hidde Smilde , Maurits Van Der Schaar , Arie Jeffrey Den Boef , Richard Johannes Franciscus Van Haren , Xing Lan Liu , Johannes Marcus Maria Beltman , Andreas Fuchs , Omer Abubaker Omer Adam , Michael Kubis , Martin Jacobus Johan Jak
Abstract: A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.
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公开(公告)号：US11194258B2
公开(公告)日：2021-12-07
申请号：US16838139
申请日：2020-04-02
Applicant: ASML NETHERLANDS B. V.
Inventor： Léon Maria Albertus Van Der Logt , Bart Peter Bert Segers , Simon Hendrik Celine Van Gorp , Carlo Cornelis Maria Luijten , Frank Staals
IPC: G03F7/00 , G03F7/20 , H01L21/027
Abstract: A lithographic process is one that applies a desired pattern onto a substrate, usually onto a target portion of the substrate. During the lithographic process, the focus needs to be controlled. There is disclosed a method for determining a fingerprint of a performance parameter associated with a substrate, such as a focus value to be used during the lithographic process. A reference fingerprint of the performance parameter is determined for a reference substrate. A reference substrate parameter of the reference substrate is determined. A substrate parameter for a substrate, such as a substrate with product structures, is determined. Subsequently, the fingerprint of the performance parameter is determined based on the reference fingerprint, reference substrate parameter and the substrate parameter. The fingerprint may then be used to control the lithographic process.
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公开(公告)号：US20210172891A1
公开(公告)日：2021-06-10
申请号：US17020574
申请日：2020-09-14
Applicant: ASML Netherlands B. V.
Inventor： Guochong Weng , Youjin Wang , Chiyan Kuan , Chung-Shih Pan
IPC: G01N23/2251 , H05F3/02 , H01J37/20 , H01J37/02 , H01J37/28
Abstract: A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.
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