摘要:
Mono- and diimide perylene and naphthalene compounds, N- and core-substituted with electron-withdrawing groups, for use in the fabrication of various device structures.
摘要:
The new fluorocarbon-functionalized polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T (1) can be straightforwardly prepared in high yield and purified by gradient sublimation. Introduction of perfluorocarbon chains on the thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the fluorine-free analog 2. Evaporated films of 1, for example, behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities on the order of ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
摘要:
The new fluorocarbon-functionalized and/or heterocycle-modified polythiophenes, in particular, &agr;,&ohgr;-diperfluorohexylsexithiophene DFH-6T can be straightforwardly prepared in high yield and purity. Introduction of such modifications to a thiophene core affords enhanced thermal stability and volatility, and increased electron affinity versus the unmodified compositions of the prior art. Evaporated films behave as n-type semiconductors, and can be used to fabricate thin film transistors with FET mobilities ˜0.01 cm2/Vs—some of the highest reported to date for n-type organic semiconductors.
摘要:
Disclosed are new organic semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
摘要:
Disclosed are thin film transistor devices incorporating a crosslinked inorganic-organic hybrid blend material as the gate dielectric. The blend material, obtained by thermally curing a mixture of an inorganic oxide precursor sol and an organosilane crosslinker at relatively low temperatures, can afford a high gate capacitance, a low leakage current density, and a smooth surface, and can be used to enable satisfactory transistor device performance at low operating voltages.
摘要:
Disclosed are thionated fused-ring (aromatic) imides and diimides that can exhibit desirable electronic properties and can possess processing advantages including solution-processability and/or good stability at ambient conditions.
摘要:
The present invention relates to semiconducting compounds, materials prepared from such compounds, methods of preparing such compounds and semiconductor materials, as well as various compositions, composites, and devices that incorporate the compounds and semiconductor materials. The semiconducting compounds can have higher electron-transport efficiency and higher solubility in common solvents compared to related representative compounds.
摘要:
Disclosed are thin film transistor devices incorporating a thin film semiconductor derived from carbonaceous nanomaterials and a dielectric layer composed of an organic-inorganic hybrid self-assembled multilayer.
摘要:
Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.