公开(公告)号：US20090314472A1

公开(公告)日：2009-12-24

申请号：US12546331

申请日：2009-08-24

申请人： Chul Ju Kim ,  Min-Whan Seo ,  Byung-Ho Sung ,  Jung-Hyun Yoo ,  Jee-Hoon Choi ,  Jae-Hyung Ki

发明人： Chul Ju Kim ,  Min-Whan Seo ,  Byung-Ho Sung ,  Jung-Hyun Yoo ,  Jee-Hoon Choi ,  Jae-Hyung Ki

IPC分类号： F28D15/04

CPC分类号： F28D15/043 ,  F28D15/046

摘要： Provided is an evaporator for a loop heat pipe system including a condenser, a vapor transport line, and a liquid transport line, and more particularly, to an evaporator having an increased contact area between a sintered wick and a heating plate.

摘要翻译： 本发明提供一种用于包括冷凝器，蒸气输送管线和液体输送管线的回路热管系统的蒸发器，更具体地，涉及一种在烧结芯和加热板之间具有增加的接触面积的蒸发器。

公开(公告)号：US20080140915A1

公开(公告)日：2008-06-12

申请号：US11694394

申请日：2007-03-30

申请人： Won-Chul Ju ,  Tae Hyun Yoon

发明人： Won-Chul Ju ,  Tae Hyun Yoon

IPC分类号： G06F12/02

CPC分类号： G06F12/0246 ,  G06F13/385 ,  G06F2212/1036 ,  G06F2212/7211 ,  G11C16/349

摘要： A memory card system and method of transmitting lifetime information thereof includes a host generating a lifetime information command, and a memory card including a memory to store data provided from the host, the memory card providing the host with lifetime information of the memory in response to the lifetime information command of the host.

摘要翻译： 存储卡系统和发送生命周期信息的方法包括生成生命周期信息命令的主机和包括存储器的存储卡，存储器存储从主机提供的数据，存储卡向主机提供响应于存储器的寿命信息 主机的生命周期信息命令。

公开(公告)号：US06872421B2

公开(公告)日：2005-03-29

申请号：US10645169

申请日：2003-08-19

申请人： Chul-Ju Hwang ,  Kyung-Sik Shim

发明人： Chul-Ju Hwang ,  Kyung-Sik Shim

IPC分类号： H01L21/205 ,  C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/45551 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45578 ,  C23C16/45589

摘要： An apparatus and method for performing atomic layer deposition. A plurality of substrates are loaded into a plurality of reaction cells. The reaction cells are disposed in a reaction chamber isolated from an exterior condition. Various paper substances are ultimately and repeatedly applied onto each substrate such that a thin film is formed on each substrate. The plurality of vapor injection pipes each inject one of the vapor substances by periodically scanning over each substrate to apply substance.

摘要翻译： 一种用于进行原子层沉积的装置和方法。 将多个基板装载到多个反应池中。 将反应池设置在与外部条件隔离的反应室中。 最终和重复地将各种纸物质施加到每个基板上，使得在每个基板上形成薄膜。 多个蒸气喷射管各自通过在每个基板上周期性地扫描来施加物质来喷射一种蒸气物质。

公开(公告)号：US06190460B1

公开(公告)日：2001-02-20

申请号：US09348237

申请日：1999-07-06

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C1600

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

摘要翻译： 一种用于低压化学气相沉积的改进的装置，其能够实现各种厚度均匀的薄膜，防止部件断裂，实现系统的自动化，以及组合使用低压化学气相沉积装置和等离子体低压 化学气相沉积装置，其包括沉积基底; 反应器，设置在所述沉积基底上并且在其中形成有反应区域; 在反应器中升高和降低的衬底，并且放置晶片; 用于将化学源气体引入反应器的化学源气体导入器; 设置在所述基板中用于加热所述晶片的基板加热部件; 以及用于加热反应器的反应器加热构件。

公开(公告)号：US6124218A

公开(公告)日：2000-09-26

申请号：US916424

申请日：1997-08-22

申请人： Chul Ju Hwang

发明人： Chul Ju Hwang

IPC分类号： H01L21/302 ,  H01L21/28 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31 ,  H01L21/316

CPC分类号： H01L21/28211 ,  H01L21/02046 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02315 ,  H01L21/31662 ,  H01L21/28167

摘要： A method for removing a native oxide and contaminants from a wafer surface at a relatively low temperature ranged from 100.degree. C. to 800.degree. C. uses H.sub.2 gas or hydrogen containing gas comprising ion sources chosen from impurity ions such as boron, phosphorus, arsenic, antimony, aluminum, and germanium activated by a plasma to be applied to the wafer surface in a vacuum furnace. A method for forming a thin oxide on a silicon wafer or substrate at a relatively low temperature ranged from 250.degree. C. to 800.degree. C. applies O.sub.2 or NO.sub.2 by using a plasma to the silicon wafer in a vacuum furnace.

摘要翻译： 在100℃至800℃的相对较低的温度下从晶片表面除去天然氧化物和污染物的方法使用包含选自杂质离子如硼，磷，砷的离子源的H 2气体或含氢气体 ，通过在真空炉中施加到晶片表面的等离子体活化的锑，铝和锗。 在250℃〜800℃的相对较低的温度下，在硅晶片或基板上形成薄氧化物的方法，在真空炉中通过使用等离子体对硅晶片施加O2或NO2。

公开(公告)号：US06026764A

公开(公告)日：2000-02-22

申请号：US348236

申请日：1999-07-06

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

摘要翻译： 一种用于低压化学气相沉积的改进的装置，其能够实现各种厚度均匀的薄膜，防止部件断裂，实现系统的自动化，以及组合使用低压化学气相沉积装置和等离子体低压 化学气相沉积装置，其包括沉积基底; 反应器，设置在所述沉积基底上并且在其中形成有反应区域; 在反应器中升高和降低的衬底，并且放置晶片; 用于将化学源气体引入反应器的化学源气体导入器; 设置在所述基板中用于加热所述晶片的基板加热部件; 以及用于加热反应器的反应器加热构件。

公开(公告)号：US5928427A

公开(公告)日：1999-07-27

申请号：US571404

申请日：1995-12-13

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C23C16/50 ,  C23C16/509 ,  C30B25/12 ,  C30B25/14 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  C23C16/00

CPC分类号： C23C16/4557 ,  C23C16/45565 ,  C23C16/4585 ,  C23C16/46 ,  C23C16/5096 ,  C30B25/12 ,  C30B25/14

摘要： An improved apparatus for a lower pressure chemical vapor deposition capable of achieving various kinds of thin films having a uniform thickness, preventing parts breakage, achieving automation of the system, and combining the use of a low pressure chemical vapor deposition apparatus and a plasma low pressure chemical vapor deposition apparatus, which includes a deposition base; a reactor disposed on the deposition base and having a reaction region formed therein; a substrate lifted and lowered in the reactor and on which a wafer is placed; a chemical source gas introducer for introducing a chemical source gas into the reactor; a substrate heating member disposed in the substrate for heating the wafer; and a reactor heating member for heating the reactor.

公开(公告)号：US5441570A

公开(公告)日：1995-08-15

申请号：US263930

申请日：1994-06-21

申请人： Chul-Ju Hwang

发明人： Chul-Ju Hwang

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/00

CPC分类号： C23C16/455 ,  C23C16/4401

摘要： Apparatus for low pressure chemical vapor deposition. The LPCVD apparatus of this invention has a compound source gas flow path which is formed between the inside and outside quartz tubes of the reactor. With the path, the apparatus supplies the compound source gas from the upper section to the lower section of the reactor and lets the source gas be introduced into the deposition reacting space of the reactor while being sufficiently mixed and sufficiently heated and achieves the desired deposition result of uniform quality and thickness of chemical thin layers. The LPCVD apparatus also prevents introduction of oxygen into the reactor when washing the quartz tubes of reactor using N.sub.2 gas, thus to prevent forming of undesirable oxide on the wafers and to minimize the fraction defective of result wafers. In LPCVD apparatus of this invention, the inside and outside quartz tubes of the reactor are easily separated and assembled with respect to the apparatus housing, thus to be easily washed or substituted with new tubes and to be produced in mass production with lower cost.

摘要翻译： 低压化学气相沉积装置。 本发明的LPCVD装置具有形成在反应器的内外石英管之间的复合源气流路径。 通过该路径，该装置将复合源气体从反应器的上部向下部提供，并将源气体充分混合并充分加热并引入到反应器的沉积反应空间中并达到所需的沉积结果 均匀的质量和厚度的化学薄层。 LPCVD装置还防止在使用N 2气体洗涤反应器的石英管时将氧气引入反应器中，从而防止在晶片上形成不合需要的氧化物，并使结晶晶片缺陷部分最小化。 在本发明的LPCVD装置中，反应器的内外石英管容易相对于装置壳体分离和组装，从而易于洗涤或用新的管替代并以较低的成本批量生产。

公开(公告)号：US08174485B2

公开(公告)日：2012-05-08

申请号：US12318056

申请日：2008-12-19

申请人： Chul Ju Jun ,  Min Hwa Kim ,  Rok Hee Lee ,  Myoung Hwa Lee

发明人： Chul Ju Jun ,  Min Hwa Kim ,  Rok Hee Lee ,  Myoung Hwa Lee

IPC分类号： G09G3/36 ,  G09G5/10

CPC分类号： G09G3/3413 ,  G09G3/3611 ,  G09G2320/028 ,  G09G2320/064 ,  G09G2320/0666 ,  G09G2360/16

摘要： The method of driving a liquid crystal display device includes calculating a brightness average value of pixel data of at least one frame period supplied to a liquid crystal display panel, and storing the average to a memory unit; generating a brightness control signal having a duty ratio according to the brightness average value of the pixel data adjusted taking variation of transmissivity with an angle of view into account in a white or black driving mode of the liquid crystal display panel; and supplying the brightness control signal to a light source unit.

摘要翻译： 驱动液晶显示装置的方法包括计算提供给液晶显示面板的至少一帧周期的像素数据的亮度平均值，并将平均值存储到存储单元; 根据在液晶显示面板的白色或黑色驱动模式下考虑到的考虑到的透视率变化而调整的像素数据的亮度平均值，生成亮度控制信号; 并将亮度控制信号提供给光源单元。

公开(公告)号：US06751273B1

公开(公告)日：2004-06-15

申请号：US09643086

申请日：2000-08-21

申请人： Cheol-Hee Park ,  Jong Ho Paik ,  Young Hwan You ,  Min-Chul Ju ,  Jin-Woong Cho

发明人： Cheol-Hee Park ,  Jong Ho Paik ,  Young Hwan You ,  Min-Chul Ju ,  Jin-Woong Cho

IPC分类号： H04B110

CPC分类号： H04B1/715 ,  H04B1/62 ,  H04L25/0224

摘要： An apparatus for compensating a channel distortion in a Bluetooth system to process a received signal having access codes comprises a multiplier for multiplying the received signal by a previously obtained channel distortion compensation signal to thereby provide a multiplied signal; a demodulator for demodulating access codes of the multiplied signal to thereby output demodulated received access codes as a demodulated signal; a correlation detection circuit for detecting correlation values between the demodulated received access codes and the access codes of the received signal previously stored therein to detect a start point of the received signal, thereby providing detected access codes having corresponding correlation values greater than a predetermined threshold and providing an enable signal if there are one or more correlation values greater than the predetermined threshold; and a channel distortion compensation circuit for performing a channel distortion compensation based on the detected access codes and a reference signal obtained by re-modulating the access codes of the received signal in response to the enable signal to thereby provide a channel distortion compensation signal.

摘要翻译： 用于补偿蓝牙系统中的信道失真以处理具有接入码的接收信号的装置包括乘法器，用于将接收信号乘以先前获得的信道失真补偿信号，从而提供相乘的信号; 解调器，用于解调相乘信号的存取码，从而输出解调的接收的接入码作为解调信号; 相关检测电路，用于检测解调的接收接入码与先前存储在其中的接收信号的接入码之间的相关值，以检测接收信号的起始点，从而提供具有大于预定阈值的相应相关值的检测到的接入码， 如果存在大于所述预定阈值的一个或多个相关值，则提供使能信号; 以及信道失真补偿电路，用于根据检测到的接入码和通过响应于使能信号重新调制接收信号的接入码而获得的参考信号来执行信道失真补偿，从而提供信道失真补偿信号。