公开(公告)号：US20100277016A1

公开(公告)日：2010-11-04

申请号：US12432385

申请日：2009-04-29

Applicant: DANG DINH DANG ,  ERIK HATCH ,  ROLF BLISSENBACH ,  KHIET LE ,  JONATHAN BIRD

Inventor： DANG DINH DANG ,  ERIK HATCH ,  ROLF BLISSENBACH ,  KHIET LE ,  JONATHAN BIRD

IPC: H02K9/19

CPC classification number: H02K1/20 ,  H02K9/19

Abstract: A permanent magnetic machine includes a stator body having a first end, a second end, and a plurality of generally radial slots formed therein for accepting a set of windings having a first set of end-turns at the first end and a second set of end-turns at the second end. The stator body has a plurality of channels adjacent to the slots and extending from the first end of the stator body to the second end of the stator body, wherein the channels are configured to allow the flow of a cooling fluid therethrough. A plurality of nozzles in fluid communication with the plurality of channels are configured to spray the cooling fluid onto the first and second set of end turns.

Abstract translation: 永磁机器包括定子体，该定子体具有形成在其中的第一端，第二端和多个大体上的径向槽，用于接收在第一端具有第一组端匝的一组绕组，以及第二组端 转到第二端。 定子体具有与槽相邻并且从定子体的第一端延伸到定子体的第二端的多个通道，其中通道构造成允许冷却流体流过其中。 与多个通道流体连通的多个喷嘴构造成将冷却流体喷射到第一组和第二组端匝上。

公开(公告)号：US20100084736A1

公开(公告)日：2010-04-08

申请号：US12613631

申请日：2009-11-06

Applicant: Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

Inventor： Dinh Dang ,  Thai Doan ,  Jessica Anne Levy ,  Max Gerald Levy ,  Alan Frederick Norris ,  James Albert Slinkman

IPC: H01L29/06

CPC classification number: H01L27/1203 ,  H01L21/28518 ,  H01L21/743 ,  H01L21/84

Abstract: A low resistance contact structure and method of making the structure. The structure includes a polysilicon contact through an upper silicon layer and buried oxide layer to a lower silicon layer of a silicon-on-insulation substrate. A region of the upper silicon layer surrounds the polysilicon contact and top surface of the polysilicon contact and surrounding region of upper silicon layer are metal silicided providing an extended contact area greater than the area of the top surface of polysilicon contact.

Abstract translation: 低电阻接触结构及其制造方法。 该结构包括通过上硅层和掩埋氧化物层到硅绝缘衬底的下硅层的多晶硅接触。 上硅层的区域围绕多晶硅接触并且多晶硅接触的顶表面和上硅层的周围区域是金属硅化物，提供大于多晶硅接触顶表面的扩展接触面积。

公开(公告)号：US07573085B2

公开(公告)日：2009-08-11

申请号：US11458828

申请日：2006-07-20

Applicant: June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

Inventor： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey C. Maling ,  Lisa Y. Ninomiya ,  Bruce W. Porth ,  Steven M. Shank ,  Jessica A. Trapasso

IPC: H01L27/108

CPC classification number: H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

Abstract: A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.

Abstract translation: 半导体结构。 该结构包括（a）半导体衬底; （b）半导体衬底上的硬掩模层; 和（c）在硬掩模层中开口的硬掩模层。 半导体衬底通过硬掩模层开口暴露于大气。 硬掩模层开口包括顶部和底部，其中底部设置在顶部和半导体衬底之间。 底部具有比顶部更宽的横向宽度。

公开(公告)号：US20060275978A1

公开(公告)日：2006-12-07

申请号：US11458828

申请日：2006-07-20

Applicant: June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey Maling ,  Lisa Ninomiya ,  Bruce Porth ,  Steven Shank ,  Jessica Trapasso

Inventor： June Cline ,  Dinh Dang ,  Mark Lagerquist ,  Jeffrey Maling ,  Lisa Ninomiya ,  Bruce Porth ,  Steven Shank ,  Jessica Trapasso

IPC: H01L21/8242 ,  H01L29/94 ,  H01L21/302

CPC classification number: H01L21/31116 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/66181 ,  Y10S438/952

Abstract: A semiconductor structure. The structure includes (a) a semiconductor substrate; (b) a hard mask layer on top of the semiconductor substrate; and (c) a hard mask layer opening in the hard mask layer. The semiconductor substrate is exposed to the atmosphere through the hard mask layer opening. The hard mask layer opening comprises a top portion and a bottom portion, wherein the bottom portion is disposed between the top portion and the semiconductor substrate. The bottom portion has a greater lateral width than the top portion.

Abstract translation: 半导体结构。 该结构包括（a）半导体衬底; （b）半导体衬底上的硬掩模层; 和（c）在硬掩模层中开口的硬掩模层。 半导体衬底通过硬掩模层开口暴露于大气。 硬掩模层开口包括顶部和底部，其中底部设置在顶部和半导体衬底之间。 底部具有比顶部更宽的横向宽度。

公开(公告)号：US20050229270A1

公开(公告)日：2005-10-13

申请号：US11051456

申请日：2005-02-04

Applicant: Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

Inventor： Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

IPC: C07K14/415 ,  C12N15/29 ,  C12N15/82 ,  A01H1/00

CPC classification number: C12N15/8234 ,  C07K14/415 ,  C12N15/8261 ,  C12N15/827 ,  Y02A40/146

Abstract: The present invention provides compositions and methods for modulating plant development by modulating the expression or activity of plant polycomb genes including FIE and MEA.

Abstract translation: 本发明提供了通过调节包括FIE和MEA在内的植物多梳基因的表达或活性来调节植物发育的组合物和方法。

公开(公告)号：US06906244B2

公开(公告)日：2005-06-14

申请号：US10176884

申请日：2002-06-21

Applicant: Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

Inventor： Robert Fischer ,  Tetsu Kinoshita ,  Ramin Yadegari ,  Mary Gehring ,  Jack Okamuro ,  Van-Dinh Dang

IPC: C07K14/415 ,  C12N15/29 ,  C12N15/82 ,  C12N15/11 ,  C12N15/63 ,  A01H5/00

CPC classification number: C12N15/8234 ,  C07K14/415 ,  C12N15/8261 ,  C12N15/827 ,  Y02A40/146

Abstract: The present invention provides compositions and methods for modulating plant development by modulating the expression or activity of plant polycomb genes including FIE and MEA.

公开(公告)号：US5346535A

公开(公告)日：1994-09-13

申请号：US749012

申请日：1991-08-23

Applicant: Steven M. Kuznicki ,  Dinh Dang ,  David T. Hayhurst ,  Kathleen A. Thrush

Inventor： Steven M. Kuznicki ,  Dinh Dang ,  David T. Hayhurst ,  Kathleen A. Thrush

IPC: B01D53/02 ,  B01J20/18 ,  B01D53/04

CPC classification number: B01D53/02 ,  B01J20/183

Abstract: Crystalline molecular sieves containing octahedral sites such as the sieves known as ETS-4, ETS-10 and ETAS-10 are used to remove volatile organic compounds from a mixture of the same with moist air at ambient temperature.

Abstract translation: 含有八面体位点的结晶分子筛（如称为ETS-4，ETS-10和ETAS-10的筛）用于在环境温度下与潮湿空气的混合物中除去挥发性有机化合物。

公开(公告)号：US08674472B2

公开(公告)日：2014-03-18

申请号：US12853532

申请日：2010-08-10

Applicant: Alan B. Botula ,  Dinh Dang ,  James S. Dunn ,  Alvin J. Joseph ,  Peter J. Lindgren

Inventor： Alan B. Botula ,  Dinh Dang ,  James S. Dunn ,  Alvin J. Joseph ,  Peter J. Lindgren

IPC: H01L21/764

CPC classification number: H01L21/76283 ,  H01L21/76289 ,  H01L27/0738 ,  H01L27/1203 ,  H01L29/0649

Abstract: A low harmonic radio-frequency (RF) switch in a silicon-on-insulator (SOI) substrate and methods of manufacture. A method includes forming at least one trench through an insulator layer. The at least one trench is adjacent a device formed in an active region on the insulator layer. The method also includes forming at least one cavity in a substrate under the insulator layer and extending laterally from the at least one trench to underneath the device.

公开(公告)号：US20130049552A1

公开(公告)日：2013-02-28

申请号：US13218191

申请日：2011-08-25

Applicant: ERIK CHRISTOPHER HATCH ,  PETER BOSTWICK ,  BRANDON GIVEN ,  DANG DINH DANG

Inventor： ERIK CHRISTOPHER HATCH ,  PETER BOSTWICK ,  BRANDON GIVEN ,  DANG DINH DANG

IPC: H02K11/00 ,  H05K13/00

CPC classification number: H02K11/0015 ,  H02K11/21 ,  Y10T29/49002

Abstract: An electric motor assembly includes a motor shaft rotatable about a longitudinal axis, an angular position sensor, and a deformable pin. The motor shaft has an axial keyway formed therein, and the axial keyway has a nominal keyway dimension. The angular position is coupled to the motor shaft to rotate with the motor shaft. The angular position sensor has an axial key to fit within the axial keyway of the motor shaft, and the axial key has a nominal key dimension that is less than the nominal keyway dimension. The deformable pin is located in the axial keyway under compression between the axial key and the motor shaft to inhibit rotational shifting of the angular position sensor relative to the motor shaft.

Abstract translation: 电动机组件包括可围绕纵向轴线旋转的电动机轴，角位置传感器和可变形销。 电动机轴具有形成在其中的轴向键槽，并且轴向键槽具有标称键槽尺寸。 角位置联接到电动机轴以与电动机轴一起旋转。 角位置传感器具有轴向键以装配在电动机轴的轴向键槽内，并且轴向键具有小于标称键槽尺寸的标称键尺寸。 可变形的销位于轴向键和电机轴之间的压缩下的轴向键槽中，以禁止角位置传感器相对于电机轴的旋转移动。

公开(公告)号：US20110315527A1

公开(公告)日：2011-12-29

申请号：US12974854

申请日：2010-12-21

Applicant: Dinh DANG ,  Thai DOAN ,  George A. DUNBAR, III ,  Zhong-Xiang HE ,  Russell T. HERRIN ,  Christopher V. JAHNES ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER ,  John G. TWOMBLY ,  Eric J. WHITE

Inventor： Dinh DANG ,  Thai DOAN ,  George A. DUNBAR, III ,  Zhong-Xiang HE ,  Russell T. HERRIN ,  Christopher V. JAHNES ,  Jeffrey C. MALING ,  William J. MURPHY ,  Anthony K. STAMPER ,  John G. TWOMBLY ,  Eric J. WHITE

IPC: H01H57/00 ,  H01L21/66 ,  G06F17/50 ,  H01L21/28

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.

Abstract translation: 提供了平面腔微机电系统（MEMS）结构，制造方法和设计结构。 该方法包括使用反向镶嵌工艺形成具有平面表面的至少一个微机电系统（MEMS）空腔。