公开(公告)号：US20070117327A1

公开(公告)日：2007-05-24

申请号：US11654073

申请日：2007-01-17

申请人： Sung-Bok Lee ,  Hong-Soo Kim ,  Han-Soo Kim

发明人： Sung-Bok Lee ,  Hong-Soo Kim ,  Han-Soo Kim

IPC分类号： H01L21/336

CPC分类号： H01L27/0629 ,  H01L27/0802 ,  H01L27/105 ,  H01L27/11526 ,  H01L27/11529 ,  H01L27/11531 ,  H01L28/20

摘要： An integrated circuit device is formed by forming a resistor pattern on a substrate. An interlayer dielectric layer is formed on the resistor pattern. The interlayer dielectric layer is patterned to form at least one opening that exposes the resistor pattern. A plug pattern is formed that fills the at least one opening and the plug pattern and resistor pattern are formed using a same material.

公开(公告)号：US06740940B2

公开(公告)日：2004-05-25

申请号：US10135947

申请日：2002-04-29

申请人： Hong-Soo Kim ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yong-Joon Choi

发明人： Hong-Soo Kim ,  Jung-Dal Choi ,  Jong-Sun Sel ,  Yong-Joon Choi

IPC分类号： H01L2976

CPC分类号： H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor memory device having a dummy active region is provided, which includes a plurality of parallel main active regions and a dummy active region coupled to ends of the main active regions. The main preferably active regions are arranged in a main memory cell array region and extend to or through a dummy cell array region surrounding the main memory cell array region. Further, the dummy active region is perpendicular to the main active regions. A redundancy cell array region may intervene between the main memory cell array region and the dummy cell array region. In this case, the main active regions are extended to the dummy cell array region through the redundancy cell array region.

公开(公告)号：US06564145B2

公开(公告)日：2003-05-13

申请号：US09752324

申请日：2000-12-27

申请人： Hong-Soo Kim ,  Jong-Hyun Lee ,  Youn-Suk Jeong

发明人： Hong-Soo Kim ,  Jong-Hyun Lee ,  Youn-Suk Jeong

IPC分类号： G01C2123

CPC分类号： G01C21/3446 ,  G01C21/34

摘要： A method is presented for finding a shortest path from a starting place to a destination place in a traffic network including one or more turn restrictions, one or more U-turns and one or more P-turns using a Dijkstra algorithm. The method as sets a virtual arc between nodes, and assigns a virtual arc value. A smallest travel time value is selected out of total travel time values for all nodes except for the starting node, by considering existing arcs between nodes and the virtual arc and assigning the smallest travel time value to a permanent label node. The shortest path is determined by tracing the permanent nodes starting from the destination node.

摘要翻译： 提出了一种用于从包括一个或多个匝限制，一个或多个匝数以及一个或多个P匝使用Dijkstra算法的交通网络中的起始地点到目的地地点找到最短路径的方法。 该方法在节点之间设置虚拟弧，并分配虚拟弧值。 通过考虑节点之间的现有弧和虚拟弧，并将最小的行进时间值分配给永久标签节点，除了起始节点之外的所有节点的总旅行时间值中，选择最小行进时间值。 通过跟踪从目的地节点开始的永久节点来确定最短路径。

公开(公告)号：US06528841B2

公开(公告)日：2003-03-04

申请号：US09995501

申请日：2001-11-26

申请人： Eun-Young Choi ,  Jung-Dal Choi ,  Jae-Duk Lee ,  Hong-Soo Kim

发明人： Eun-Young Choi ,  Jung-Dal Choi ,  Jae-Duk Lee ,  Hong-Soo Kim

IPC分类号： H01L29788

CPC分类号： H01L27/115

摘要： A NAND type flash memory device has a dummy region forming a dummy pattern. In the flash memory device, a common source line is formed to cross only with an isolation layer adjacent an active region of a normal pattern forming memory cells.

公开(公告)号：US20180012903A1

公开(公告)日：2018-01-11

申请号：US15601501

申请日：2017-05-22

申请人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Ju-Yeon LEE

发明人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Ju-Yeon LEE

IPC分类号： H01L23/528

摘要： A vertical memory device includes a substrate including a cell region and a peripheral circuit region, gate electrodes sequentially stacked on the cell region of the substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a channel on the cell region and extending through the gate electrodes in the vertical direction, a first lower contact plug on the peripheral circuit region and extending in the vertical direction, a second lower contact plug on the peripheral circuit region adjacent to the first lower contact plug and extending in the vertical direction, and a first upper wiring electrically connected to the first lower contact plug. The first upper wiring is configured to and apply an electrical signal to the first lower contact plug. The second lower contact plug is not electrically connected to an upper wiring configured to apply an electrical signal.

公开(公告)号：US20170117290A1

公开(公告)日：2017-04-27

申请号：US15212356

申请日：2016-07-18

申请人： TAE-HEE LEE ,  HONG-SOO KIM ,  KYOUNG-HOON KIM ,  YOUNG-SUK LEE

发明人： TAE-HEE LEE ,  HONG-SOO KIM ,  KYOUNG-HOON KIM ,  YOUNG-SUK LEE

IPC分类号： H01L27/115 ,  G11C16/04 ,  G11C16/08 ,  H01L23/528 ,  H01L23/522

CPC分类号： H01L27/11582 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/11568 ,  H01L27/11573 ,  H01L28/00

摘要： A highly integrated semiconductor memory device includes a substrate, a plurality of vertical pillars above the substrate, a plurality of connection lines extending over the vertical pillars, a plurality of lower via plugs provided above the vertical pillars and connecting the vertical pillars to the connection lines, a dummy connection line provided at a same level as the connection lines with respect to a main surface of the substrate, and a dummy via plug connected to a lower surface of the dummy connection line and having a different height than each of the lower via plugs. The vertical pillars, the connection lines, the lower via plugs are provided in a cell region, and the dummy connection line and the dummy via plug are provided in a dummy region.

公开(公告)号：US08923800B2

公开(公告)日：2014-12-30

申请号：US13183956

申请日：2011-07-15

申请人： Sei-kwon Kim ,  Hong-soo Kim

发明人： Sei-kwon Kim ,  Hong-soo Kim

IPC分类号： H04M11/04 ,  G06Q10/06 ,  G06Q50/26 ,  H04W4/02 ,  H04W4/22 ,  G08B21/10 ,  H04L29/08

CPC分类号： H04W4/22 ,  G06Q10/06 ,  G06Q50/26 ,  G08B21/10 ,  H04L67/26 ,  H04W4/021 ,  H04W4/90

摘要： A method and apparatus for receiving and providing disaster information. The method of providing the disaster information includes: classifying a disaster service district into a plurality of emergency zones according to a danger level; transmitting information regarding the plurality of emergency zones to at least one mobile terminal located within the plurality of emergency zones, and receiving a location of the at least one mobile terminal from the at least one mobile terminal; and sequentially transmitting disaster information according to the danger level, to the at least one mobile terminal in the plurality of emergency zones, based on the location of a disaster which has been received from a disaster information server, when a disaster occurs.

摘要翻译： 一种用于接收和提供灾害信息的方法和装置。 提供灾害信息的方法包括：根据危险等级将灾区服务区划分为多个应急区; 将关于所述多个紧急区域的信息发送到位于所述多个紧急区域内的至少一个移动终端，以及从所述至少一个移动终端接收所述至少一个移动终端的位置; 并且在发生灾害时，基于从灾害信息服务器接收到的灾害的位置，依次将灾害信息根据危险等级发送到多个紧急区域中的至少一个移动终端。

公开(公告)号：US20130105877A1

公开(公告)日：2013-05-02

申请号：US13614028

申请日：2012-09-13

申请人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Hoo-Sung CHO

发明人： Kyoung-Hoon KIM ,  Hong-Soo KIM ,  Hoo-Sung CHO

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L29/66825 ,  H01L21/76232 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11565 ,  H01L27/1157 ,  H01L29/66833

摘要： A non-volatile memory device includes a substrate including an active region and a field region, selection transistors and cell transistors on the active region, bit line contacts on the bridge portions, and shared bit lines electrically connected to the bit line contacts. The active region includes string portions and bridge portions. The string portions extends in a first direction and is arranged in a second direction substantially perpendicular to the first direction, and the bridge portions connects at least two adjacent string portions. Each bridge portion has a length in the first direction equal to or longer than about twice a width of each bit line contact in the first direction.

摘要翻译： 非易失性存储器件包括：衬底，其包括有源区域和场区域，有源区域上的选择晶体管和单元晶体管，桥接部分上的位线接触，以及电连接到位线触点的共享位线。 有源区域包括串部分和桥接部分。 弦线部分沿第一方向延伸并且布置在基本上垂直于第一方向的第二方向上，并且桥接部分连接至少两个相邻的线部分。 每个桥接部分具有在第一方向上的长度等于或大于每个位线接触件在第一方向上的宽度的大约两倍。

公开(公告)号：US08414861B2

公开(公告)日：2013-04-09

申请号：US12276301

申请日：2008-11-21

申请人： Nam Jo Jeong ,  Seong Ok Han ,  Hong Soo Kim ,  Hee Yeon Kim

发明人： Nam Jo Jeong ,  Seong Ok Han ,  Hong Soo Kim ,  Hee Yeon Kim

IPC分类号： D01F9/16

CPC分类号： D01F9/16 ,  C01B32/05 ,  Y10T428/26 ,  Y10T428/292

摘要： Disclosed herein is a carbonized cellulose material having a graphite nanosized surface layer directly carbonized from a cellulose fiber, and a method of synthesizing a carbonized cellulose material having a graphite nanolayer on a surface thereof, including: i) heating a cellulose fiber in a reactor; ii) forming a primary carbonized cellulose while maintaining temperature of the reactor; iii) cooling the formed primary carbonized cellulose; iv) heating the cooled primary carbonized cellulose; v) forming a secondary carbonized cellulose while maintaining temperature of the reactor; vi) cooling the formed secondary carbonized cellulose.

摘要翻译： 本文公开了一种碳纤维素材料，其具有从纤维素纤维直接碳化的石墨纳米尺度表面层，以及在其表面上合成具有石墨纳米层的碳化纤维素材料的方法，包括：i）在反应器中加热纤维素纤维; ii）在保持反应器的温度的同时形成初级碳化纤维素; iii）冷却形成的初级碳化纤维素; iv）加热冷却的一次碳化纤维素; v）在保持反应器的温度的同时形成二次碳化纤维素; vi）冷却形成的二次碳化纤维素。

公开(公告)号：US20120191407A1

公开(公告)日：2012-07-26

申请号：US13285566

申请日：2011-10-31

申请人： Hong-soo KIM ,  Sei-kwon KIM ,  Jong-ho LEE ,  Eun NAMGUNG

发明人： Hong-soo KIM ,  Sei-kwon KIM ,  Jong-ho LEE ,  Eun NAMGUNG

IPC分类号： G06F19/00

CPC分类号： G07C9/00103 ,  G07C9/00111

摘要： A method and apparatus for managing a location of a ward, the method including: determining a ward location updating period based on a current location of the ward within a safety zone; and if the determined location updating period is about to elapse, transmitting the current location of the ward at a time when the updating period elapses.

摘要翻译： 一种用于管理病房位置的方法和装置，所述方法包括：基于所述病房在安全区内的当前位置来确定病房位置更新周期; 并且如果确定的位置更新周期即将过去，则在更新周期过去的时间传送病房的当前位置。