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74 条记录 (耗时 0.033 秒)

    Solid-state thin-film capacitor
    31.
    发明授权
    Solid-state thin-film capacitor 有权
    固态薄膜电容器

    公开(公告)号：US08786049B2

    公开(公告)日：2014-07-22

    申请号：US13260078

    申请日：2010-07-23

    申请人： Hooman Hafezi

    发明人： Hooman Hafezi

    IPC分类号： H01L21/02

    CPC分类号： H01G4/33

    摘要： Solid-state thin-film capacitors are provided. Aspects of the solid-state thin-film capacitors include a first electrode layer of a transition metal, a dielectric layer of an oxide of the transition metal, and a second electrode layer of a metal oxide. Also provided are methods of making the solid-state thin-film capacitors, as well as devices that include the same. The capacitor may have one or more cathodic arc produced structures, i.e., structures produced using a cathodic arc deposition process. The structures may be stress-free metallic structures, porous layers and layers displaying crenulations. Aspects of the invention further include methods of producing capacitive structures using chemical vapor deposition and/or by sputter deposition.

    摘要翻译： 提供固态薄膜电容器。 固体薄膜电容器的方面包括过渡金属的第一电极层，过渡金属的氧化物的电介质层和金属氧化物的第二电极层。 还提供了制造固态薄膜电容器的方法以及包括它们的装置。 电容器可以具有一个或多个阴极电弧产生结构，即使用阴极电弧沉积工艺制造的结构。 这些结构可以是无应力的金属结构，多孔层和显示出齿的层。 本发明的方面还包括使用化学气相沉积和/或通过溅射沉积制造电容结构的方法。

    Miniature Ingestible Device
    35.
    发明申请
    Miniature Ingestible Device 有权
    微型摄入装置

    公开(公告)号：US20130030366A1

    公开(公告)日：2013-01-31

    申请号：US13639766

    申请日：2011-04-07

    申请人： Timothy Robertson ,  Hooman Hafezi ,  Raymond Schmidt

    发明人： Timothy Robertson ,  Hooman Hafezi ,  Raymond Schmidt

    IPC分类号： A61M31/00 ,  B32B37/14

    CPC分类号： A61M31/002 ,  A61J3/07 ,  A61K9/4808 ,  Y10T156/10

    摘要： The present invention discloses multiple approaches to preventing the capsule walls and other material from interfering with the performance of an electronic device once the device is activated by surrounding fluid. In accordance with the teachings of the present invention, a miniature ingestible device (MID) may be created using excipients and films. The MID, in accordance with various aspects of the present invention, will have a coating or laminating surrounding an electronic device and separating and isolating the device from the pharmaceutical product or drug within the capsule once the capsule is ingested as well as from the capsule itself as the capsule walls begin to collapse during the disintegration process.

    摘要翻译： 本发明公开了一旦装置被周围的流体激活时，防止胶囊壁和其它材料干扰电子装置的性能的多种方法。 根据本发明的教导，可以使用赋形剂和薄膜制造微型可摄取装置（MID）。 根据本发明的各个方面，MID将具有围绕电子设备的涂层或层压，并且一旦胶囊被摄取以及从胶囊本身就将该装置与胶囊内的药物或药物分离并分离 因为胶囊壁在分解过程中开始崩溃。

    Method of direct plating of copper on a ruthenium alloy
    39.
    发明申请
    Method of direct plating of copper on a ruthenium alloy 审中-公开
    在钌合金上直接电镀铜的方法

    公开(公告)号：US20060283716A1

    公开(公告)日：2006-12-21

    申请号：US11373635

    申请日：2006-03-09

    申请人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

    发明人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

    IPC分类号： C25D3/38

    CPC分类号： C25D5/34 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer that is an alloy of a group VIII metal and a refractory metal. In one aspect, the alloy consists of at least 50% ruthenium and the balance a copper diffusion barrier material. A copper layer is electroplated on the alloy directly. In one aspect, the surface of the barrier layer is conditioned prior to plating to improve adhesion and reduce the critical current density for plating on the barrier layer. The conditioning may include cathodic pre-treatment or a plasma pre-treatment in a hydrogen or hydrogen/helium mixture. In one aspect, the substrate surface is immersed in an acidic plating bath and a nucleation waveform is applied to form a seed layer. In another aspect, the substrate is immersed in a neutral or alkaline copper solution that includes complexed copper ions.

    摘要翻译： 公开了一种用于将铜籽晶层沉积到基底表面上的方法，通常在作为VIII族金属和难熔金属的合金的阻挡层上。 一方面，合金由至少50％的钌组成，余量为铜扩散阻挡材料。 铜层直接电镀在合金上。 在一个方面，阻隔层的表面在镀覆之前被调节以提高粘附性并降低在阻挡层上电镀的临界电流密度。 调理可以包括阴极预处理或氢或氢/氦混合物中的等离子体预处理。 在一个方面，将基材表面浸入酸性电镀浴中并施加成核波形以形成种子层。 另一方面，将衬底浸入包括络合的铜离子的中性或碱性铜溶液中。