公开(公告)号：US20080019273A1

公开(公告)日：2008-01-24

申请号：US10586094

申请日：2005-01-14

Applicant: Jun Ho Lee

Inventor： Jun Ho Lee

IPC: H04B7/155

CPC classification number: H04W76/12 ,  H04L2012/5607 ,  H04L2012/5676

Abstract: The present invention relates to a method for processing call traffic in an ATM Switch Block (ASB) in a CDMA 1x system. The CDMA 1x system comprises a Base Transceiver System (BTS), which comprises an OA, a High-speed Transfer and Selector Block (HTSB), an ATM Switch Block (ASB), an ATM Traffic Block (ATB) and a MMCA, and a Base Transceiver System (BTS), which is coupled to a Call Control Processor (CCP). When a request for call setup is transferred from the BTS to the CCP, a traffic path between the OA and the MMCA is set up through performing the claimed method. The present invention removes unnecessary traffic paths so as to utilize system resources efficiently while optimizing system performance.

Abstract translation: 本发明涉及CDMA 1x系统中ATM切换块（ASB）中的呼叫业务处理方法。 CDMA 1x系统包括基站收发器系统（BTS），其包括OA，高速传输和选择器块（HTSB），ATM交换块（ASB），ATM业务块（ATB）和MMCA，以及 基站收发器系统（BTS），其耦合到呼叫控制处理器（CCP）。 当从BTS向CCP传送呼叫建立请求时，通过执行所要求保护的方法来建立OA和MMCA之间的业务路径。 本发明消除不必要的业务路径，以便在优化系统性能的同时有效利用系统资源。

公开(公告)号：US07268238B2

公开(公告)日：2007-09-11

申请号：US11072123

申请日：2005-03-07

Applicant: Byung Won Woo ,  Seoung Woo Yoon ,  Jun Ho Lee ,  Soon Hong Park ,  Nak Joon Jang ,  Hyo Jin Yoon

Inventor： Byung Won Woo ,  Seoung Woo Yoon ,  Jun Ho Lee ,  Soon Hong Park ,  Nak Joon Jang ,  Hyo Jin Yoon

IPC: C07D317/42

CPC classification number: C07D317/36 ,  Y02P20/142

Abstract: The method of producing 4-fluoroethylene carbonate (FEC), in which ethylene carbonate (EC) reacts with a mixture of fluorine and nitrogen gases, includes feeding a mixture gas of fluorine gas and nitrogen gas into a reactor having ethylene carbonate charged therein, so as to react the ethylene carbonate with the mixture gas of the fluorine gas and the nitrogen gas. The mixture gas fed in the reactor is regulated to have a desired bubble size while passing through a gas bubble regulating column, in which a packing for a packed column is packed. In the method, EC directly reacts with F2/N2 mixture gas to produce FEC, thus a purification process is simple and it is possible to produce FEC at high conversion efficiency and selectivity.

Abstract translation: 碳酸亚乙酯（EC）与氟和氮气的混合物反应的氟代碳酸亚乙酯（FEC）的制造方法包括将氟气和氮气的混合气体进料到装有碳酸亚乙酯的反应器中，因此 使碳酸亚乙酯与氟气和氮气的混合气体反应。 在反应器中供给的混合气被调节为具有期望的气泡尺寸，同时通过气泡调节塔，其中填充有填料柱的填料。 在该方法中，EC直接与F 2 N 2 / N 2 N 2混合气体反应以产生FEC，因此纯化过程简单，并且可以产生高转换效率的FEC 和选择性。

公开(公告)号：US20070123062A1

公开(公告)日：2007-05-31

申请号：US11605092

申请日：2006-11-28

Applicant: Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

Inventor： Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

IPC: H01L21/336 ,  H01L29/76 ,  H01L21/00

CPC classification number: H01L29/66795 ,  H01L29/7851

Abstract: In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.

Abstract translation: 在半导体器件和半导体器件的制造方法中，形成插头和沟道结构。 塞子填充开口并且通道结构从插头向上延伸。 通道结构具有基本垂直的侧壁。 开口通过位于基板上的绝缘结构形成。 塞子和通道结构包括通过激光束的照射从非晶状态改变的单晶状态的材料。 通道结构掺杂有杂质如硼，磷或砷。

公开(公告)号：US20070072399A1

公开(公告)日：2007-03-29

申请号：US11530498

申请日：2006-09-11

Applicant: Young-Pil Kim ,  Jin-Bum Kim ,  Jun-Ho Lee ,  Hyung-ik Lee ,  Hion-Suck Baik

Inventor： Young-Pil Kim ,  Jin-Bum Kim ,  Jun-Ho Lee ,  Hyung-ik Lee ,  Hion-Suck Baik

IPC: H01L21/20 ,  H01L21/00 ,  H01L21/36 ,  H01L31/20

CPC classification number: H01L21/02381 ,  H01L21/0245 ,  H01L21/0251 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66628 ,  H01L31/0543 ,  Y02E10/52

Abstract: Semiconductor devices are provided having a selective epitaxial growth layer that exhibits suppressed lateral growth. These semiconductor devices may include a semiconductor substrate having a silicon region, and an epitaxial growth layer formed on the silicon region. The epitaxial growth layer may comprise alternatively stacked silicon and silicon germanium epitaxial layers. The silicon germanium epitaxial layer may be thinner than the silicon epitaxial layers.

Abstract translation: 提供具有显示抑制的横向生长的选择性外延生长层的半导体器件。 这些半导体器件可以包括具有硅区域的半导体衬底和形成在硅区域上的外延生长层。 外延生长层可以包括交替堆叠的硅和锗锗外延层。 硅锗外延层可以比硅外延层薄。

公开(公告)号：US07176704B2

公开(公告)日：2007-02-13

申请号：US10823546

申请日：2004-04-14

Applicant: Je-hyoung Ryu ,  Tae-gyu Kim ,  Soon-kyu Yim ,  Sung-jin Lee ,  Jun-ho Lee

Inventor： Je-hyoung Ryu ,  Tae-gyu Kim ,  Soon-kyu Yim ,  Sung-jin Lee ,  Jun-ho Lee

IPC: G01R31/02

CPC classification number: G01R1/0458

Abstract: An inspecting apparatus for semiconductor devices including: a match plate; a contact module combined with the match plate, and the match plate including a radiation unit radiating heat from the semiconductor devices to the outside, and a test unit contacting leads of the semiconductor; an insert module installed on a bottom of the contact module, and having a semiconductor device accommodator to accommodate the semiconductor device; and an auxiliary radiation member installed on a bottom of the insert module, and radiating the heat from the semiconductor device to the outside. Accordingly, the inspecting apparatus for semiconductor device according to the present invention performs testing at a constant temperature regardless of heat from the semiconductors by radiating the heat from the semiconductors immediately and efficiently, thereby producing more accurate test results. Accurate testing improves productivity and saves expense by removing faulty test results caused by identifying a qualified semiconductor as a defective semiconductor due to heat radiated from the semiconductor device.

Abstract translation: 一种用于半导体器件的检查装置，包括：匹配板; 与所述匹配板组合的接触模块，所述匹配板包括从所述半导体器件向外部辐射热的辐射单元，以及接触所述半导体的引线的测试单元; 插入模块，安装在所述触点模块的底部，并且具有用于容纳所述半导体器件的半导体器件容纳器; 以及安装在所述插入模块的底部上的辅助辐射构件，并且将来自所述半导体器件的热量散发到外部。 因此，根据本发明的半导体装置的检查装置不管来自半导体的热量是恒定的，通过立即有效地辐射来自半导体的热量进行测试，从而产生更准确的测试结果。 通过从半导体器件辐射的热量，通过识别合格的半导体作为有缺陷的半导体而导致的故障测试结果，可以提高生产率并节省成本。

公开(公告)号：US20070005213A1

公开(公告)日：2007-01-04

申请号：US11170080

申请日：2005-06-30

Applicant: Seong-Taeg Nou ,  Hyeon-Su Kim ,  Chang-Hwan Lim ,  Jung-Hyun Lim ,  Jun-Ho Lee

Inventor： Seong-Taeg Nou ,  Hyeon-Su Kim ,  Chang-Hwan Lim ,  Jung-Hyun Lim ,  Jun-Ho Lee

IPC: G06F19/00

CPC classification number: B60W10/184 ,  B60W30/18036 ,  B60W50/16

Abstract: Disclosed herein is a backward control system for an automobile using telematics. The system includes: a sensor unit to sense a backward speed, presence of a backward object, and the operating state of the brake pedal and the accelerator pedal of an automobile when backward-travelling; a telematics system unit to output a control signal, when a distance between the automobile and the object is within a pre-set range in response to the signal from the sensor unit, such that the backward-travelling is automatically interrupted to thereby prevent collision with the object; and a accelerator pedal control unit and a brake pedal control unit to automatically control the operation of the accelerator pedal and the brake pedal to thereby interrupt the backward-travelling in response to the control signal outputted from the telematics system unit.

Abstract translation: 本文公开了一种使用远程信息处理的汽车的后向控制系统。 该系统包括：用于感测后退速度的传感器单元，向后物体的存在，以及当后退行驶时汽车的制动踏板和加速器踏板的操作状态; 远程信息处理系统单元，其响应于来自传感器单元的信号而在汽车和物体之间的距离处于预定范围内时输出控制信号，使得后退行进自动中断，从而防止与 物体; 以及加速器踏板控制单元和制动踏板控制单元，用于根据从远程信息处理系统单元输出的控制信号，自动控制加速器踏板和制动踏板的操作，从而中断后退行驶。

公开(公告)号：US07033915B2

公开(公告)日：2006-04-25

申请号：US10881257

申请日：2004-06-30

Applicant: Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

Inventor： Myung Kwan Ryu ,  Ho Nyeon Lee ,  Jae Chul Park ,  Eok Su Kim ,  Kyoung Seok Son ,  Jun Ho Lee ,  Se Yeoul Kwon

IPC: H01L21/20

CPC classification number: H01L27/1285 ,  B23K26/066 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/0268 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1296 ,  H01L27/3244

Abstract: Disclosed is a method for crystallizing a single crystalline Si film on an amorphous substrate, such as a glass substrate or a plastic substrate. The method includes the steps of selectively irradiating the laser beam onto a pixel section TFT forming region and a peripheral circuit TFT forming region of the amorphous silicon film through primary and secondary laser irradiation processes, thereby forming a poly-silicon film and irradiating the laser beam onto one of grains formed in the poly-silicon film through a third laser irradiation process, thereby forming a single crystalline silicon region having a desired size on a predetermined portion of the amorphous silicon film. The amorphous silicon film is locally crystallized into the single crystalline silicon film so that characteristics of TFTs for the pixel section and the peripheral circuit are improved while ensuring high uniformity.

Abstract translation: 公开了一种在诸如玻璃基板或塑料基板的非晶基底上结晶单晶Si膜的方法。 该方法包括以下步骤：通过一次和二次激光照射处理将激光束选择性地照射到非晶硅膜的像素部分TFT形成区域和外围电路TFT形成区域，从而形成多晶硅膜并照射激光束 通过第三激光照射工艺在形成在多晶硅膜中的晶粒中的一个上形成在非晶硅膜的预定部分上具有所需尺寸的单晶硅区域。 将非晶硅膜局部结晶化为单晶硅膜，从而提高像素部分和外围电路的TFT的特性，同时确保高均匀性。

公开(公告)号：US07026201B2

公开(公告)日：2006-04-11

申请号：US11085953

申请日：2005-03-22

Applicant: Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

Inventor： Kyoung Seok Son ,  Myung Kwan Ryu ,  Jae Chul Park ,  Eok Su Kim ,  Jun Ho Lee ,  Se Yeoul Kwon ,  Jang Soon Im

IPC: H01L21/336

CPC classification number: H01L21/02667 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757

Abstract: A method for forming a polycrystalline silicon thin film transistor. The method includes the steps of: forming a polycrystalline silicon layer including multiple protrusions by crystallizing the amorphous silicon layer according to a crystallization method in which the multiple protrusions are formed due to collision between crystal grains; patterning the polycrystalline silicon layer in an active pattern which includes only two protrusions of the multiple protrusions, which are apart from each other and located at both sides of a gate electrode-forming area; applying a barrier layer on the patterned polycrystalline silicon layer while partially covering the two protrusions; and forming a source electrode and a drain electrode at the protrusions of the polycrystalline silicon layer formed at both sides of the gate electrode-forming area by ion-implanting dopants into a resultant lamination.

Abstract translation: 一种形成多晶硅薄膜晶体管的方法。 该方法包括以下步骤：通过结晶方法形成包含多个突起的多晶硅层，该结晶方法由于晶粒之间的碰撞而形成多个突起; 以仅包括多个突起的两个突起的有源图案图案化多晶硅层，所述突起彼此分开并位于栅电极形成区域的两侧; 在图案化的多晶硅层上施加阻挡层，同时部分地覆盖两个突起; 以及在形成在栅电极形成区的两侧的多晶硅层的突起处，通过将掺杂剂离子注入到所得到的层压中，形成源电极和漏电极。

公开(公告)号：US20060052728A1

公开(公告)日：2006-03-09

申请号：US11194743

申请日：2005-08-01

Applicant: D. Kerrigan ,  Patrick Riley ,  Ugo Croce ,  Paul Allaire ,  Jun-Ho Lee

Inventor： D. Kerrigan ,  Patrick Riley ,  Ugo Croce ,  Paul Allaire ,  Jun-Ho Lee

IPC: A61B5/11 ,  A61B5/103 ,  A63B22/02 ,  G01M19/00

CPC classification number: A63B71/0009 ,  A61B5/1038 ,  A61B5/4528 ,  A63B21/00181 ,  A63B21/4009 ,  A63B22/02 ,  A63B22/0235 ,  A63B69/0064 ,  A63B2022/0094 ,  A63B2220/24 ,  A63B2220/51 ,  A63B2220/803 ,  A63B2225/096 ,  A63B2230/62

Abstract: Partial body-weight support systems and methods for human gait training are disclosed. The system may include a motor and a cord coupled to the motor, the cord and the motor providing at least partial body-weight support to a user during human gait training. The system may also include a controller that actively adjusts the operation of the motor based upon measured gait parameters. The method may include coupling a human to a motor and monitoring the gait of the human while the human is walking to produce a signal indicative of the gait of the human. The method may also include varying the operation of the motor based on the signal so as to assist the human in attaining a predetermined gait pattern.

Abstract translation: 公开了用于人类步态训练的部分体重支撑系统和方法。 系统可以包括马达和与马达相连的绳索，绳索和马达在人类步态训练期间向使用者提供至少部分的体重支撑。 该系统还可以包括基于测量的步态参数来主动地调节电动机的操作的控制器。 该方法可以包括将人耦合到马达并且在人行走时监视人的步态以产生指示人的步态的信号。 该方法还可以包括基于该信号改变电动机的操作，以帮助人达到预定的步态模式。

公开(公告)号：US20050007456A1

公开(公告)日：2005-01-13

申请号：US10888625

申请日：2004-07-09

Applicant: Jong-Hyup Lee ,  Jun-Ho Lee

Inventor： Jong-Hyup Lee ,  Jun-Ho Lee

IPC: H04M1/725 ,  H04B7/26 ,  H04W4/02 ,  H04N5/225

CPC classification number: H04M1/72577 ,  H04M1/72572 ,  H04M2250/52 ,  H04N1/00307 ,  H04N1/00925 ,  H04N1/00973 ,  H04N5/232 ,  H04N5/772 ,  H04N21/4223 ,  H04N21/4524 ,  H04N2101/00 ,  H04N2201/0084

Abstract: A method, system and apparatus for restricting, within a specific area, the photographing function of a camera mounted in a mobile terminal. A control signal is transmitted to a mobile terminal within a photograph-prohibited area and the mobile terminal disables the camera. Upon leaving the photograph-prohibited area, the camera is enabled.

Abstract translation: 一种用于在特定区域内限制安装在移动终端中的相机的拍摄功能的方法，系统和装置。 控制信号被发送到无照片区域内的移动终端，并且移动终端禁用相机。 离开照片禁止区域后，相机启用。