公开(公告)号：US20060186412A1

公开(公告)日：2006-08-24

申请号：US11408022

申请日：2006-04-21

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US07056626B2

公开(公告)日：2006-06-06

申请号：US10624555

申请日：2003-07-23

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G01F9/00

CPC分类号： H01L21/0268 ,  B23K26/0604 ,  B23K26/0608 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  G03F1/26 ,  H01L21/2026 ,  H01L27/1285 ,  Y10T117/1004

摘要： The present invention is directed to a crystallization apparatus including an illumination system to illuminate a phase shift mask, which converts a light beam from the illumination system into a light beam that has a light intensity distribution of an inverse peak pattern having a minimum intensity in an area corresponding to a phase shift portion of the phase shift mask. The crystallization apparatus further includes an optical member to form on a predetermined plane a light intensity distribution of a concave pattern, which has a light intensity that is minimum in an area corresponding to the phase shift portion and increases toward the circumference of that area based on the light from the illumination system, and an image-forming optical system to set a surface of the polycrystalline semiconductor film or the amorphous semiconductor film or its conjugate plane and the predetermined plane to an optical conjugate relationship.

摘要翻译： 本发明涉及一种结晶装置，其包括照明系统，用于照射相移掩模，该相移掩模将来自照明系统的光束转换成具有在具有最小强度的反峰值图案的光强度分布的光束 相应于相移掩模的相移部分的区域。 结晶装置还包括光学构件，以在预定平面上形成凹形图案的光强度分布，该凹形图案的光强度在与相移部分相对应的区域中最小，并且基于 来自照明系统的光，以及将多晶半导体膜或非晶半导体膜或其共轭面和预定平面的表面设定为光学共轭关系的成像光学系统。

公开(公告)号：US06946367B2

公开(公告)日：2005-09-20

申请号：US10366754

申请日：2003-02-13

申请人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

发明人： Masakiyo Matsumura ,  Mikihiko Nishitani ,  Yoshinobu Kimura ,  Masayuki Jyumonji ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Fumiki Nakano

IPC分类号： B23K26/06 ,  C30B1/00 ,  C30B13/00 ,  C30B13/24 ,  H01L21/20 ,  H01L21/268 ,  H01L21/322

CPC分类号： H01L21/02678 ,  B23K26/06 ,  B23K26/066 ,  B23K2101/40 ,  C30B1/00 ,  C30B13/24 ,  C30B29/06 ,  H01L21/02691 ,  H01L21/2026 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1016

摘要： Methods for forming a single crystal semiconductor thin film layer from a non-single crystal layer includes directing a light source having a homogenized intensity distribution and a modulated amplitude towards the non-single crystal layer, and relatively moving the light with respect to the layer wherein the amplitude of the conditioned light is preferably increased in the direction of relative motion of the light to the layer. Preferred methods also include multiple light exposures in overlapping series to form ribbon-shaped single crystal regions, and providing a low temperature point in the semiconductor layer to generate a starting location for single crystalization.

摘要翻译： 从非单晶层形成单晶半导体薄膜层的方法包括将具有均匀强度分布和调制振幅的光源引向非单晶层，并相对于其相对移动光， 调节后的光的振幅优选在光的相对运动方向上增加。 优选的方法还包括重叠系列中的多次曝光以形成带状单晶区域，并且在半导体层中提供低温点以产生用于单晶化的起始位置。

公开(公告)号：US20050159014A1

公开(公告)日：2005-07-21

申请号：US11058344

申请日：2005-02-14

申请人： Masayuki Jyumonji

发明人： Masayuki Jyumonji

IPC分类号： H01L21/22 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/469

CPC分类号： H01L29/66757

摘要： A treatment method of annealing and doping a semiconductor including irradiating a semiconductor layer (13) formed on a substrate (11) with a laser beam (a), thereby melting at least a part of the semiconductor layer; irradiating a target material (2) including atoms with which the semiconductor layer is to be doped with the laser beam (a′), thereby ablating the atoms of the target material; and doping the melted semiconductor layer with the ablated atoms.

摘要翻译： 包括用激光束（a）照射形成在基板（11）上的半导体层（13）的半导体退火和掺杂的处理方法，从而熔化半导体层的至少一部分; 用激光束（a'）照射包括要掺杂半导体层的原子的目标材料（2），从而烧蚀靶材料的原子; 并且用烧蚀的原子掺杂熔融的半导体层。

公开(公告)号：US06911717B2

公开(公告)日：2005-06-28

申请号：US10394479

申请日：2003-03-21

申请人： Masayuki Jyumonji

发明人： Masayuki Jyumonji

IPC分类号： H01L21/22 ,  H01L21/20 ,  H01L21/265 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L23/552

CPC分类号： H01L29/66757

摘要： A treatment apparatus for annealing and/or doping of a semiconductor, the apparatus having an air shield chamber in which are disposed a treated plate including a substrate and a semiconductor layer formed directly or indirectly thereon, and a target material having atoms with which a semiconductor layer is to be doped. At least one laser beam is directed to at least a part of the semiconductor layer and at least a part of the target material. Where multiple beams are used, whether from a single or multiple sources, one beam is directed at the semiconductor layer and another beam is directed to the target material. Where a single beam is used, the beam is directed at the semiconductor layer and at least a portion of the laser beam is reflected by the semiconductor layer to be incident on the target material.

摘要翻译： 一种用于半导体退火和/或掺杂的处理装置，该装置具有一个空气屏蔽室，其中设置有一个处理板，该处理板包括基板和直接或间接形成的半导体层，以及具有半导体 层被掺杂。 至少一个激光束被引导到半导体层的至少一部分和目标材料的至少一部分。 在使用多个波束的情况下，无论是从单个还是多个源，一个波束被引导到半导体层，另一个波束被引导到目标材料。 在使用单个光束的情况下，光束被引导到半导体层，并且激光束的至少一部分被半导体层反射以入射到目标材料上。

公开(公告)号：US07550694B2

公开(公告)日：2009-06-23

申请号：US11299789

申请日：2005-12-13

申请人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

发明人： Masayuki Jyumonji ,  Yukio Taniguchi ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshio Takami

IPC分类号： B23K26/02 ,  H01L21/268

CPC分类号： B23K26/066 ,  B23K26/0006 ,  B23K26/03 ,  B23K26/032 ,  B23K26/034 ,  B23K26/0838 ,  B23K26/354 ,  B23K26/40 ,  B23K2101/40 ,  B23K2103/50 ,  B23K2103/56 ,  C30B13/24 ,  C30B29/06 ,  C30B35/00

摘要： A laser anneal apparatus is provided with a laser source; a homogenizing optical system disposed in an optical path of laser light emitted from the laser source to homogenize an intensity distribution of the laser light in a section which is perpendicular to the optical path; a phase shifter disposed in the optical path of the laser light passed through the homogenizing optical system to produce an intensity distribution pattern of the laser light in the section which is perpendicular to the optical path; a photoreceptor device disposed in the optical path of the laser light passed through the phase shifter to intercept a part of the laser light and to measure a quantity of the intercepted laser light; and an image-forming optical system disposed in the optical path of the laser light passed through the photoreceptor device to focus the laser light on a substrate to be treated.

摘要翻译： 激光退火装置设置有激光源; 均匀化光学系统，其设置在从所述激光源发射的激光的光路中，以使所述激光在与所述光路垂直的部分中的强度分布均匀化; 设置在通过均匀化光学系统的激光的光路中的相移器，以在垂直于光路的部分中产生激光的强度分布图案; 设置在通过所述移相器的激光的光路中的感光体装置，以截取激光的一部分并测量被截取的激光的量; 以及设置在穿过感光器件的激光的光路中的成像光学系统，以将激光聚焦在待处理的基底上。

公开(公告)号：US20090038536A1

公开(公告)日：2009-02-12

申请号：US12243426

申请日：2008-10-01

申请人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

发明人： Yukio Taniguchi ,  Masayuki Jyumonji ,  Hiroyuki Ogawa

IPC分类号： C30B1/02

CPC分类号： C30B13/24 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1012 ,  Y10T117/1016

摘要： A first optical modulation element irradiates a non-single-crystal substance with a light beam which is to have a first light intensity distribution on the non-single crystal substance by modulating an intensity of an incident first light beam, thereby melting the substance. A second optical modulation element irradiates the substance with a light beam which is to have a second light intensity distribution on the substance by modulating an intensity of an incident second light beam, thereby melting the substance. An illumination system causes the light beam having the second light intensity distribution to enter the molten part of the substance in a period that the substance is partially molten by irradiation of the light beam having the first light intensity distribution.

摘要翻译： 第一光调制元件通过调制入射的第一光束的强度，将具有第一光强度分布的光束的非单晶物质照射在非单晶物质上，从而熔化物质。 第二光调制元件通过调制入射的第二光束的强度，从而使该物质熔化，从而将具有第二光强分布的光束照射在物质上。 照射系统使得具有第二光强分布的光束在物质通过具有第一光强度分布的光束的照射而部分熔融的时段内进入物质的熔融部分。

公开(公告)号：US20080019002A1

公开(公告)日：2008-01-24

申请号：US11861885

申请日：2007-09-26

申请人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

发明人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Hirotaka Yamaguchi ,  Mikihiko Nishitani ,  Susumu Tsujikawa ,  Yoshinobu Kimura ,  Masayuki Jyumonji

IPC分类号： G02B27/00

CPC分类号： H01L29/78675 ,  B23K26/066 ,  B23K26/073 ,  B23K26/0734 ,  G02B5/02 ,  G02B5/3083 ,  G03F1/28 ,  G03F1/34 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1285 ,  H01L29/66757 ,  Y10T117/10

摘要： A crystallization apparatus includes an illumination system which applies illumination light for crystallization to a non-single-crystal semiconductor film, and a phase shifter which includes first and second regions disposed to form a straight boundary and transmitting the illumination light from the illumination system by a first phase retardation therebetween, and phase-modulates the illumination light to provide a light intensity distribution having an inverse peak pattern that light intensity falls in a zone of the non-single-crystal semiconductor film containing an axis corresponding to the boundary. The phase shifter further includes a small region which extends into at least one of the first and second regions from the boundary and transmits the illumination light by a second phase retardation with respect to the at least one of the first and second regions.

摘要翻译： 结晶装置包括：向非单晶半导体膜施加用于结晶的照明光的照明系统;以及移相器，其包括设置成形成直边界的第一和第二区域，并将来自照明系统的照明光透过 第一相位相位差，并且对照明光进行相位调制，以提供具有光强度落在包含对应于边界的轴的非单晶半导体膜的区域中的反峰值图案的光强度分布。 移相器还包括从边界延伸到第一和第二区域中的至少一个区域的小区域，并相对于第一和第二区域中的至少一个透射照明光第二相位延迟。

公开(公告)号：US20070141815A1

公开(公告)日：2007-06-21

申请号：US11679724

申请日：2007-02-27

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masato Hiramatsu ,  Noritaka Akita ,  Tomoya Kato

IPC分类号： H01L21/268

CPC分类号： B23K26/0853 ,  B23K26/03 ,  B23K26/032 ,  B23K26/0622 ,  B23K2101/40

摘要： In a laser processing method and a laser processing apparatus which irradiate a processing target body with a laser beam pulse-oscillated from a laser beam source, a processing state is monitored by a photodetector, and the laser beam source is again subjected to oscillation control on the moment when erroneous laser irradiation is detected, thereby performing laser processing. Further, in a laser crystallization method and a laser crystallization apparatus using a pulse-oscillated excimer laser, a homogenizing optical system, an optical element and a half mirror are arranged in an optical path, light from the half mirror is detected by a photodetector, and a light intensity insufficient irradiation position is again irradiated with a laser beam to perform crystallization when the detection value does not fall within a range of a predetermined specified value.

摘要翻译： 在激光加工方法和激光加工装置中，激光加工装置利用从激光束源脉冲振荡的激光束照射加工对象体，利用光电检测器对加工状态进行监视，再次对激光束源进行振荡控制 检测到错误的激光照射的时刻，进行激光加工。 此外，在激光结晶方法和使用脉冲振荡准分子激光器的激光结晶装置中，均匀化光学系统，光学元件和半反射镜被布置在光路中，来自半反射镜的光由光电检测器检测， 并且当检测值不在预定指定值的范围内时，用激光束再次照射光强度不足的照射位置，以进行结晶。

公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。