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公开(公告)号：US20210050213A1
公开(公告)日：2021-02-18
申请号：US16547724
申请日：2019-08-22
Inventor： Stephen E. Savas , Shawming Ma
Abstract: Plasma processing apparatus and associated methods are provided. In one example, a plasma processing apparatus includes a plasma chamber. The plasma processing apparatus includes a dielectric wall forming at least a portion of the plasma chamber. The plasma processing apparatus includes an inductive coupling element located proximate the dielectric wall. The plasma processing apparatus includes an ultraviolet light source configured to emit an ultraviolet light beam onto a metal surface that faces an interior volume of the plasma chamber. The plasma processing apparatus includes a controller configured to control the ultraviolet light source.
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公开(公告)号：US10910228B2
公开(公告)日：2021-02-02
申请号：US16357800
申请日：2019-03-19
Inventor： Michael X. Yang , Hua Chung , Xinliang Lu
IPC: H01L21/768 , H01L21/3213 , H01L21/321 , H01L21/311 , H01L21/3105 , H01L21/306 , H01L21/302 , H01L21/30 , H01L21/027 , H01L21/02 , H01J37/32 , C23F4/00 , C23F1/12 , C23C16/452 , B01D67/00
Abstract: Surface treatment processes for treating a workpiece with organic radicals are provided. In one example implementation, a method for processing a workpiece having a semiconductor material and a carbon containing layer (e.g., photoresist) can include a surface treatment process on the workpiece. The surface treatment process can include generating one or more species in a first chamber (e.g., a plasma chamber). The surface treatment process can include mixing one or more hydrocarbon radicals with the species to create a mixture. The surface treatment process can include exposing the carbon containing layer to the mixture in a second chamber (e.g., a processing chamber).
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公开(公告)号：US20200350158A1
公开(公告)日：2020-11-05
申请号：US16861345
申请日：2020-04-29
Inventor： Michael X. Yang , Christian Pfahler , Alexandr Cosceev
Abstract: Apparatus, systems, and methods for processing workpieces are provided. In one example implementation, a hydrogen gas mixed with an inert gas can be reacted with an oxygen gas to oxidize a workpiece at atmospheric pressure. A chemical reaction of a hydrogen gas with an oxygen gas facilitated by a hot workpiece surface can positively affect an oxidation process. A reaction speed of the chemical reaction can be slowed down by mixing the hydrogen gas with an inert gas. Such mixture can effectively reduce a partial pressure of the hydrogen gas. As such, the oxidation process can be carried out at atmospheric pressure, thereby, in an atmospheric thermal processing chamber.
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公开(公告)号：US10760976B2
公开(公告)日：2020-09-01
申请号：US15951291
申请日：2018-04-12
Inventor： Michael X. Yang
Abstract: Thermal imaging of heat sources in thermal processing systems for determination of workpiece temperature are provided. In one example, a thermal processing apparatus can include a processing chamber, a workpiece support, a plurality of heat sources configured to heat a workpiece, and at least one camera. The at least one camera can capture one or more images of thermal radiation of the plurality of heat sources during thermal treatment of the workpiece. In one example, a method for calibrating the camera can include obtaining the one or more images of thermal radiation of at least one heat source, obtaining one or more reference signals indicative of irradiation of the at least one heat source, and calibrating the camera based at least in part on a comparison between the one or more images of thermal radiation and the one or more reference signals indicative of irradiation of the heat source.
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公开(公告)号：US20200245444A1
公开(公告)日：2020-07-30
申请号：US16258744
申请日：2019-01-28
Applicant: Mattson Technology, Inc.
Inventor： Shuang Meng , Xinliang Lu , Shawming Ma , Hua Chung
Abstract: Plasma processing apparatus and associated methods for detecting air leak are provided. In one example implementation, the plasma processing apparatus can include a processing chamber to process a workpiece, a plasma chamber separated from the processing chamber by a separation grid, and an inductive coupling element to induce an oxygen plasma using a process gas in the plasma chamber. The plasma processing apparatus can detect afterglow emission strength from reaction between nitric oxide (NO) and oxygen radical(s) in a process space downstream to an oxygen plasma to measure nitrogen concentrations due to presence of air leak.
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Patent Agency Ranking
公开(公告)号：US20200234969A1
公开(公告)日：2020-07-23
申请号：US16744403
申请日：2020-01-16
Inventor： Shanyu Wang , Ting Xie , Chun Yan , Xinliang Lu , Hua Chung , Michael X. Yang
IPC: H01L21/311 , H01J37/32
Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.
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公开(公告)号：US20200161094A1
公开(公告)日：2020-05-21
申请号：US16658259
申请日：2019-10-21
Inventor： Qi Zhang , Xinliang Lu , Hua Chung
IPC: H01J37/32 , H01L21/67 , H01L21/311
Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include conducting a pre-treatment process on a processing chamber to generate a hydrogen radical affecting layer on a surface of the processing chamber prior to performing a hydrogen radical based surface treatment process on a workpiece in the processing chamber. In this manner, a pretreatment process can be conducted to condition a processing chamber to increase uniformity of hydrogen radical exposure to a workpiece.
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公开(公告)号：US20190318937A1
公开(公告)日：2019-10-17
申请号：US16379912
申请日：2019-04-10
Applicant: Mattson Technology, Inc.
Inventor： Michael X. Yang , Hua Chung , Xinliang Lu
IPC: H01L21/311 , H01L21/67
Abstract: Methods for material removal of a film, such as a metal nitride film, from a workpiece are provided. One example implementation is directed to a method for processing a workpiece. The workpiece can include a film (e.g., a metal nitride film). The method can include generating one or more species (e.g., hydrogen radicals, excited inert gas molecules, etc.). The method can include mixing alkyl halide with the one or more species to generate one or more alkyl radicals. The method can include exposing the film to the one or more alkyl radicals.
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39.发明授权公开(公告)号：US10403492B1
公开(公告)日：2019-09-03
申请号：US16216006
申请日：2018-12-11
Applicant: Mattson Technology, Inc.
Inventor： Michael X. Yang , Hua Chung , Xinliang Lu , Haochen Li , Ting Xie , Qi Zhang
IPC: H01L21/02 , H01J37/32 , H01L21/67 , H01L21/3213 , H01L21/285
Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, organic radicals (e.g., methyl CH3 radicals) can be generated by exciting and/or dissociating hydrogen and/or inert gas (e.g., Ar, He, etc) molecules in a remote plasma source and a subsequent reaction with organic molecule (alkanes and alkenes). The organic radicals (e.g., methyl CH3 radicals) can be exposed to the silicon and/or silicon germanium surfaces. After exposure to the organic radicals, the silicon and/or silicon germanium surfaces can be stable in air for a time period (e.g., days) with reduced surface oxidation such that the silicon and/or silicon germanium surfaces can be effectively protected from oxidation. As such, native surface oxide removal process before subsequent process steps can be eliminated.
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公开(公告)号：US20190198301A1
公开(公告)日：2019-06-27
申请号：US16218931
申请日：2018-12-13
Applicant: Mattson Technology, Inc.
Inventor： Shawming Ma , Hua Chung , Michael X. Yang , Dixit V. Desai , Ryan M. Pakulski
IPC: H01J37/32 , H01L21/3065 , H01L21/687
CPC classification number: H01J37/32899 , H01J37/32119 , H01J37/32357 , H01J37/32449 , H01J37/32458 , H01J37/32568 , H01J37/32715 , H01J2237/3341 , H01J2237/3342 , H01J2237/3345 , H01L21/3065 , H01L21/68742
Abstract: Plasma processing apparatus and methods are provided. In one example implementation, the plasma processing apparatus includes a processing chamber. The plasma processing apparatus includes a pedestal disposed in the processing chamber. The pedestal is operable to support a workpiece. The plasma processing apparatus includes a plasma chamber disposed above the processing chamber in a vertical direction. The plasma chamber includes a dielectric sidewall. The plasma processing apparatus includes a separation grid separating the processing chamber from the plasma chamber. The plasma processing apparatus includes a first plasma source proximate the dielectric sidewall. The first plasma source is operable to generate a remote plasma in the plasma chamber above the separation grid. The plasma processing apparatus includes a second plasma source. The second plasma source is operable to generate a direct plasma in the processing chamber below the separation grid.
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