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    Light Emitting Structures with Selective Carrier Injection Into Multiple Active Layers
    32.
    发明申请
    Light Emitting Structures with Selective Carrier Injection Into Multiple Active Layers 有权

    公开(公告)号：US20210343900A1

    公开(公告)日：2021-11-04

    申请号：US17373659

    申请日：2021-07-12

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Mikhail V. Kisin ,  Yea-Chuan Milton Yeh ,  Chih-Li Chuang ,  Jyh-Chia Chen

    IPC: H01L33/08 ,  H01L33/06 ,  H01L33/32 ,  H01S5/042 ,  H01S5/343

    Abstract: Disclosed herein are multi-layered optically active regions for semiconductor light-emitting devices (LEDs) that incorporate intermediate carrier blocking layers, the intermediate carrier blocking layers having design parameters for compositions and doping levels selected to provide efficient control over the carrier injection distribution across the active regions to achieve desired device injection characteristics. Examples of embodiments discussed herein include, among others: a multiple-quantum-well variable-color LED operating in visible optical range with full coverage of RGB gamut, a multiple-quantum-well variable-color LED operating in visible optical range with an extended color gamut beyond standard RGB gamut, a multiple-quantum-well light-white emitting LED with variable color temperature, and a multiple-quantum-well LED with uniformly populated active layers.

    III-V LIGHT EMITTING DEVICE WITH PIXELS ENABLING LOWER COST THROUGH-LAYER VIAS
    33.
    发明申请
    III-V LIGHT EMITTING DEVICE WITH PIXELS ENABLING LOWER COST THROUGH-LAYER VIAS 有权

    公开(公告)号：US20210242372A1

    公开(公告)日：2021-08-05

    申请号：US17161571

    申请日：2021-01-28

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury ,  Qian Fan ,  Kameshwar Yadavalli

    IPC: H01L33/30 ,  H01L33/62 ,  H01L27/15

    Abstract: A III-V light emitting device with pixels (mesa regions) specifically designed to enable lower cost through layer vias is disclosed for reduced cost of manufacture of the device. Reduction of cost of manufacture is achieved by having non-uniform width trench regions formed during pixel etch for the multi-pixel array part of the device. Through-layer vias are specifically formed in the wider part of the trench regions using cheaper lithography toolset enabled by the larger via critical dimension achievable in the wider part of the trench regions (as compared to narrow part of the trench regions). Larger via critical dimension enables improved electrical (and consequently optical) performance of the device due to better overlay control as well as lower via resistance.

    Content Adaptive Light Field Compression
    34.
    发明申请
    Content Adaptive Light Field Compression 审中-公开

    公开(公告)号：US20200036988A1

    公开(公告)日：2020-01-30

    申请号：US16597496

    申请日：2019-10-09

    Applicant: Ostendo Technologies, Inc.

    Inventor： Danillo Bracco Graziosi ,  Zahir Y. Alpaslan ,  Dale A. McNeill ,  Hussein S. El-Ghoroury

    IPC: H04N19/186 ,  H04N19/597 ,  G06T9/00 ,  H04N19/154 ,  H04N19/103 ,  G06T9/20

    Abstract: A compression method for high-resolution light field display is disclosed for applications in which computer memory constraints and latency are critical. The disclosed compression algorithm takes advantage of the 3D structure of a light field to compress the raw light field information with a fixed compression ratio and simple decoding instructions. The compressed high-resolution light field achieves a reduced bandwidth with acceptable quality, and is packed in a way that can be transmitted using common interfaces. In a preferred embodiment, the compression algorithm is used as a post-processing stage after light field information acquisition or after rendering. In a further preferred embodiment, the compression algorithm is incorporated into the acquisition or rendering procedure to reduce memory and rendering processing. These and further embodiments generate a compressed light field with all information required for direct display.

    Random Access in Encoded Full Parallax Light Field Images
    35.
    发明申请
    Random Access in Encoded Full Parallax Light Field Images 审中-公开

    公开(公告)号：US20190394488A1

    公开(公告)日：2019-12-26

    申请号：US16452008

    申请日：2019-06-25

    Applicant: Ostendo Technologies, Inc.

    Inventor： Zahir Y. Alpaslan ,  Hussein S. El-Ghoroury

    IPC: H04N19/597 ,  H04N19/105 ,  H04N19/17 ,  H04N19/80

    Abstract: Methods and systems for light field image encoding and decoding are disclosed. According to some embodiments, the method receives scene metadata and input light field images associated with a scene. The method further performs a first encoding operation on the scene metadata and the input light field images to generate reference views and reference disparity information. The method further performs a second encoding operation based on the reference views, the reference disparity information, and synthesized residuals to output encoded light field data, where the encoded light field data comprises encoded reference views, encoded reference disparity information, and encoded synthesized residuals. The method further randomly accesses and selects a group of reference views and corresponding disparity information from the encoded light field data based on one or more selected regions of interest. And the method transmits the selected group of reference views, the selected corresponding disparity information, and the encoded synthesized residuals.

    Quantum Photonic Imager Incorporating Color-Tunable Solid State Light Emitting Micro Pixels
    36.
    发明申请
    Quantum Photonic Imager Incorporating Color-Tunable Solid State Light Emitting Micro Pixels 审中-公开

    公开(公告)号：US20190333455A1

    公开(公告)日：2019-10-31

    申请号：US16398048

    申请日：2019-04-29

    Applicant: Ostendo Technologies, Inc.

    Inventor： Hussein S. El-Ghoroury

    IPC: G09G3/34 ,  H04N9/31 ,  H01L33/08 ,  H01L33/06

    Abstract: An emissive quantum photonic imager comprised of a spatial array of digitally addressable multicolor micro pixels. Each pixel is an emissive micro optical cavity comprising a monolithic color-tunable semiconductor light emitting diode. The light generated by each color-tunable pixel diode is emitted perpendicularly to the plane of the imager directly or via a plurality of vertical waveguides that extract and collimate the light generated from the pixel diode. Each pixel diode is individually addressable to enable the pixel to emit any of the colors associated with its monolithic color-tunable semiconductor light emitting diode at any on/off duty cycle for each color. The individual pixels modulate their required colors and brightness values by controlling the drive current and/or on/off duty cycle of the respective color-tunable diodes. Pixel-level micro optics further collimate and directionally modulate the light emitted from the micro pixels.

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