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    Electro-luminescent device including metal-insulator transition layer
    31.
    发明授权
    Electro-luminescent device including metal-insulator transition layer 有权
    电致发光器件包括金属 - 绝缘体过渡层

    公开(公告)号：US08174188B2

    公开(公告)日：2012-05-08

    申请号：US12518107

    申请日：2007-09-17

    Applicant: Sun-Jin Yun ,  JungWook Lim ,  Hyun-Tak Kim

    Inventor： Sun-Jin Yun ,  JungWook Lim ,  Hyun-Tak Kim

    IPC: H05B33/02

    CPC classification number: H05B33/22

    Abstract: Provided is an electro-luminescent device (ELD) including a metal-insulator transition (MIT) layer. The ELD includes: a substrate; a EL phosphor layer positioned on the substrate and comprising luminescent center ions generating light; the MIT layer disposed on a surface of the EL phosphor layer and being abruptly changed from an insulator to a metal according to a variation of a voltage; a first insulator adhered to the MIT layer to distribute a voltage applied from an external source; and a second insulator disposed on the other side of the EL phosphor layer.

    Abstract translation: 提供了包括金属 - 绝缘体转变（MIT）层的电致发光器件（ELD）。 ELD包括：基材; 位于所述基板上并包含产生光的发光中心离子的EL荧光体层; 所述MIT层设置在所述EL荧光体层的表面上，并根据电压的变化从绝缘体突然变为金属; 粘附到MIT层以分布从外部源施加的电压的第一绝缘体; 以及设置在所述EL荧光体层的另一侧的第二绝缘体。

    Logic circuit using metal-insulator transition (MIT) device
    34.
    发明授权
    Logic circuit using metal-insulator transition (MIT) device 失效
    使用金属 - 绝缘体转换（MIT）器件的逻辑电路

    公开(公告)号：US07791376B2

    公开(公告)日：2010-09-07

    申请号：US12447922

    申请日：2007-08-07

    Applicant: JungWook Lim ,  Sun-Jin Yun ,  Hyun-Tak Kim

    Inventor： JungWook Lim ,  Sun-Jin Yun ,  Hyun-Tak Kim

    IPC: H03K19/20

    CPC classification number: H03K19/20

    Abstract: Provided is a logic circuit comprising a metal-insulator transition (MIT) device, including: an MIT device unit including an MIT thin film, an electrode thin film contacting the MIT thin film, and at least one MIT device undergoing a discontinuous MIT at a transition voltage VT; a power source unit including at least one power source applying power to the MIT device; and at least one resistor connected to the MIT device, wherein a logic operation is performed on a signal through the power source to output the result of the logic operation as an output signal.

    Abstract translation: 提供了一种包括金属 - 绝缘体转变（MIT）器件的逻辑电路，包括：包括MIT薄膜的MIT器件单元，与MIT薄膜接触的电极薄膜以及经历不连续MIT的至少一个MIT器件， 转换电压VT; 电源单元，包括向MIT设备施加电力的至少一个电源; 以及连接到MIT装置的至少一个电阻器，其中对通过电源的信号执行逻辑运算，以将逻辑运算的结果输出为输出信号。

    OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT
    36.
    发明申请
    OSCILLATION CIRCUIT BASED ON METAL-INSULATOR TRANSITION DEVICE AND METHOD OF DRIVING THE OSCILLATION CIRCUIT 失效
    基于金属绝缘体过渡装置的振荡电路及驱动振荡电路的方法

    公开(公告)号：US20100060369A1

    公开(公告)日：2010-03-11

    申请号：US12516105

    申请日：2007-10-31

    Applicant: Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

    Inventor： Yong-Wook Lee ,  Bongjun Kim ,  Sungyoul Choi ,  Jungwook Lim ,  Sun-Jin Yun ,  Byung-Gyu Chae ,  Hyun-Tak Kim ,  Gyungock Kim

    IPC: H03B7/14

    CPC classification number: H01L49/003 ,  H01L29/94 ,  H03B17/00

    Abstract: Provided are an oscillatory circuit based on a metal-insulator transition (MIT) device that can generate a simple and very high oscillating frequency using the MIT device, and a method of driving the oscillatory circuit. The oscillatory circuit includes the MIT device that comprises an MIT thin film and an electrode thin film connected to the MIT thin film and in which an abrupt MIT is generated due to an MIT generating voltage, a resistor that is serially connected to the MIT device, an electric al power source limiting the maximum amount of an applied current and applying a direct current constant voltage to the MIT device, and a light source irradiating electromagnetic waves on the MIT device, wherein the oscillating properties are generated by irradiating the electromagnetic waves using the light source.

    Abstract translation: 提供了一种基于金属 - 绝缘体转变（MIT）器件的振荡电路，其可以使用MIT器件产生简单且非常高的振荡频率，以及驱动振荡电路的方法。 振荡电路包括MIT设备，其包括MIT薄膜和连接到MIT薄膜的电极薄膜，并且其中由于MIT产生电压而产生突然MIT;串联连接到MIT设备的电阻器， 限制施加电流的最大量并向MIT装置施加直流恒定电压的电动电源以及在MIT装置上照射电磁波的光源，其中振荡特性是通过使用 光源。

    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR
    37.
    发明申请
    PROGRAMMABLE MIT SENSOR USING THE ABRUPT MIT DEVICE, AND ALARM APPARATUS AND SECONDARY BATTERY ANTI-EXPLOSION CIRCUIT INCLUDING THE MIT SENSOR 有权
    使用破碎麻醉器装置的可编程麻省传感器，以及包括麻省传感器的报警装置和二次电池防爆电路

    公开(公告)号：US20090315724A1

    公开(公告)日：2009-12-24

    申请号：US12303000

    申请日：2007-05-30

    Applicant: Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

    Inventor： Hyun-Tak Kim ,  Bong-Jun Kim ,  Byung-Gyu Chae ,  Sun-Jin Yun ,  Sung-Youl Choi ,  Yong-Wook Lee ,  JungWook Lim ,  Sang-Kuk Choi ,  Kwang-Yong Kang

    IPC: G08B17/00 ,  H01L29/78 ,  G01N27/04 ,  H01M2/00

    CPC classification number: H01L49/003 ,  G01K3/005

    Abstract: Provided are an abrupt MIT device with variable MIT temperature or voltage, an MIT sensor using the abrupt MIT device, and an alarm apparatus and a secondary battery anti-explosion circuit including the MIT sensor The MIT device includes an abrupt MIT layer undergoing an abrupt MIT at a transition temperature or a transition voltage and at least two electrode layers contacting the abrupt MIT layer. The transition temperature or the transition voltage varies with at least one of factors including a voltage applied to the electrode layers, a temperature, an electromagnetic wave, a pressure, and a gas concentration that affect the abrupt MIT layer. The MIT sensor is a temperature sensor, an infrared sensor, an image sensor, a pressure sensor, a gas-concentration sensor, or a switch. The alarm apparatus includes the MIT sensor and an alarm-signaling unit connected in series with the MIT sensor. The secondary battery anti-explosion circuit includes a secondary battery, the MIT sensor attached to the secondary battery to sense the temperature of the secondary battery and thus to prevent the possible explosion of the secondary battery, and a protection circuit body powered by the secondary battery.

    Abstract translation: 提供了具有可变MIT温度或电压的突变MIT装置，使用突发MIT装置的MIT传感器，以及包括MIT传感器的报警装置和二次电池防爆电路.MIT装置包括经历突发MIT的突发MIT层 在转变温度或过渡电压下，以及与突变MIT层接触的至少两个电极层。 转变温度或转变电压随着包括施加在电极层上的电压，温度，电磁波，压力和影响突发MIT层的气体浓度的因素中的至少一个而变化。 MIT传感器是温度传感器，红外传感器，图像传感器，压力传感器，气体浓度传感器或开关。 报警装置包括MIT传感器和与MIT传感器串联连接的报警信号单元。 二次电池防爆电路包括二次电池，MIT传感器附接到二次电池以感测二次电池的温度，从而防止二次电池的可能的爆炸，以及由二次电池供电的保护电路体 。

    Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer
    39.
    发明申请
    Abrupt Metal-Insulator Transition Wafer, and Heat Treatment Apparatus and Method For the Wafer 审中-公开
    突破式金属绝缘体过渡晶片，以及用于晶片的热处理设备和方法

    公开(公告)号：US20080277763A1

    公开(公告)日：2008-11-13

    申请号：US11997050

    申请日：2006-07-04

    Applicant: Hyun Tak Kim ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Sun Jin Yun

    Inventor： Hyun Tak Kim ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Sun Jin Yun

    IPC: H01L21/322 ,  H01L29/12 ,  H05B3/68

    CPC classification number: H01L21/324 ,  H01L21/3245 ,  H01L21/67103 ,  H01L21/68728

    Abstract: Provided are a wafer with the characteristics of abrupt metal-insulator transition (MIT), and a heat treatment apparatus and method that make it possible to mass-produce a large-diameter wafer without directly attaching the wafer to a heater or a substrate holder. The heat treatment apparatus includes a heater applying heat to a wafer having the characteristics of abrupt MIT and one surface covered with a thermally opaque film, and a plurality of fixing units formed along an edge portion of a top surface of the heater to fix the wafer to the heater.

    Abstract translation: 提供具有突变金属 - 绝缘体转变特性（MIT）的晶片，以及使得可以批量生产大直径晶片而不将晶片直接附接到加热器或基板保持器的热处理设备和方法。 热处理装置包括对具有突然MIT特性的突起的晶片加热的加热器和覆盖有不透热膜的一个表面，以及沿着加热器顶面的边缘部分形成的多个固定单元，以固定晶片 到加热器。

    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same
    40.
    发明授权
    Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same 有权
    三端子金属绝缘体转换开关，包括相同的开关系统及其控制金属 - 绝缘体转换的方法

    公开(公告)号：US08536554B2

    公开(公告)日：2013-09-17

    申请号：US12599248

    申请日：2008-05-07

    Applicant: Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    Inventor： Hyun-Tak Kim ,  Yong-Wook Lee ,  Bong-Jun Kim ,  Sung-Youl Choi ,  Sun-Jin Yun

    IPC: H01L21/02

    CPC classification number: H01L49/003

    Abstract: Provided are a 3-terminal MIT switch which can easily control a discontinuous MIT jump and does not need a conventional gate insulating layer, a switching system including the 3-terminal MIT switch, and a method of controlling an MIT of the 3-terminal MIT switch. The 3-terminal MIT switch includes a 2-terminal MIT device, which generates discontinuous MIT in a transition voltage, an inlet electrode and an outlet electrode, which are respectively connected to each terminal of the 2-terminal MIT device, and a control electrode, which is connected to the inlet electrode and includes an external terminal separated from an external terminal of the inlet electrode, wherein an MIT of the 2-terminal MIT device is controlled according to a voltage or a current applied to the control electrode. The switching system includes the 3-terminal MIT switch, a voltage source connected to the inlet electrode, and a control source connected to the control electrode.

    Abstract translation: 提供了一种三端MIT开关，其可以容易地控制不连续的MIT跳转，并且不需要传统的栅极绝缘层，包括3端子MIT开关的开关系统以及控制三端MIT的MIT的方法 开关。 3端MIT开关包括2端MIT装置，其分别连接到2端MIT装置的每个端子，产生过渡电压的不连续MIT，入口电极和出口电极以及控制电极 ，其连接到入口电极并且包括与入口电极的外部端子分离的外部端子，其中根据施加到控制电极的电压或电流来控制2端子MIT装置的MIT。 开关系统包括三端MIT开关，连接到入口电极的电压源和连接到控制电极的控制源。

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